DE112013001238A5 - Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung - Google Patents

Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung Download PDF

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Publication number
DE112013001238A5
DE112013001238A5 DE112013001238.3T DE112013001238T DE112013001238A5 DE 112013001238 A5 DE112013001238 A5 DE 112013001238A5 DE 112013001238 T DE112013001238 T DE 112013001238T DE 112013001238 A5 DE112013001238 A5 DE 112013001238A5
Authority
DE
Germany
Prior art keywords
susceptor
controlling
surface temperature
substrate coating
coating device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112013001238.3T
Other languages
English (en)
Inventor
Ralf Leiers
Markus Lünenbürger
Gerhard Karl Strauch
Bernd Schineller
Karl-Heinz Büchel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of DE112013001238A5 publication Critical patent/DE112013001238A5/de
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
    • G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
    • G05D23/1932—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of a plurality of spaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Remote Sensing (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control Of Resistance Heating (AREA)
DE112013001238.3T 2012-03-01 2013-02-28 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung Pending DE112013001238A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012101717A DE102012101717A1 (de) 2012-03-01 2012-03-01 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
DE102012101717.4 2012-03-01
PCT/EP2013/053986 WO2013127891A1 (de) 2012-03-01 2013-02-28 Verfahren und vorrichtung zur regelung der oberflächentemperatur eines suszeptors einer substratbeschichtungseinrichtung

Publications (1)

Publication Number Publication Date
DE112013001238A5 true DE112013001238A5 (de) 2015-01-15

Family

ID=47891615

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102012101717A Withdrawn DE102012101717A1 (de) 2012-03-01 2012-03-01 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung
DE112013001238.3T Pending DE112013001238A5 (de) 2012-03-01 2013-02-28 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102012101717A Withdrawn DE102012101717A1 (de) 2012-03-01 2012-03-01 Verfahren und Vorrichtung zur Regelung der Oberflächentemperatur eines Suszeptors einer Substratbeschichtungseinrichtung

Country Status (4)

Country Link
CN (1) CN104204291B (de)
DE (2) DE102012101717A1 (de)
TW (1) TWI571528B (de)
WO (1) WO2013127891A1 (de)

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DE102013109155A1 (de) 2013-08-23 2015-02-26 Aixtron Se Substratbehandlungsvorrichtung
DE102013114412A1 (de) 2013-12-18 2015-06-18 Aixtron Se Vorrichtung und Verfahren zur Regelung der Temperatur in einer Prozesskammer eines CVD-Reaktors unter Verwendung zweier Temperatursensoreinrichtungen
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
DE102014117388A1 (de) 2014-11-27 2016-06-02 Aixtron Se Verfahren zum Kalibrieren einer Pyrometeranordnung eines CVD- oder PVD-Reaktors
CN104635792B (zh) * 2015-01-09 2017-10-27 中国科学院工程热物理研究所 基于主动温度梯度法控制表面张力驱动对流的方法
DE102015100640A1 (de) * 2015-01-19 2016-07-21 Aixtron Se Vorrichtung und Verfahren zum thermischen Behandeln von Substraten
CN105390421A (zh) * 2015-10-14 2016-03-09 上海华力微电子有限公司 一种反应室温度分区控制系统
DE102017105333A1 (de) * 2017-03-14 2018-09-20 Aixtron Se Verfahren und Vorrichtung zur thermischen Behandlung eines Substrates
JP7003759B2 (ja) * 2017-06-28 2022-01-21 東京エレクトロン株式会社 熱処理装置、熱処理装置の管理方法及び記憶媒体
DE102018121854A1 (de) * 2018-09-07 2020-03-12 Aixtron Se Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors
DE102019107295A1 (de) * 2019-03-21 2020-09-24 Aixtron Se Verfahren zur Erfassung eines Zustandes eines CVD-Reaktors unter Produktionsbedingungen
DE102020100481A1 (de) * 2020-01-10 2021-07-15 Aixtron Se CVD-Reaktor und Verfahren zur Regelung der Oberflächentemperatur der Substrate
CN113846376B (zh) * 2021-09-23 2022-12-27 浙江晶盛机电股份有限公司 外延生长装置的调温方法以及外延生长装置
CN113862647A (zh) * 2021-09-28 2021-12-31 长江存储科技有限责任公司 一种薄膜沉积设备及方法
WO2023198804A1 (de) 2022-04-14 2023-10-19 Hte Gmbh The High Throughput Experimentation Company Vorrichtung zur wärmebehandlung

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US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US5871805A (en) * 1996-04-08 1999-02-16 Lemelson; Jerome Computer controlled vapor deposition processes
US6079874A (en) * 1998-02-05 2000-06-27 Applied Materials, Inc. Temperature probes for measuring substrate temperature
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US6034357A (en) * 1998-06-08 2000-03-07 Steag Rtp Systems Inc Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases
US6706541B1 (en) * 1999-10-20 2004-03-16 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors
JP4754757B2 (ja) * 2000-03-30 2011-08-24 東京エレクトロン株式会社 基板のプラズマ処理を調節するための方法、プラズマ処理システム、及び、電極組体
US6492625B1 (en) * 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
DE10207461A1 (de) 2002-02-22 2003-09-04 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden von mehrkomponentigen Halbleiterschichten auf mindestens einem Substrat
US20040222210A1 (en) * 2003-05-08 2004-11-11 Hongy Lin Multi-zone ceramic heating system and method of manufacture thereof
DE102004007984A1 (de) 2004-02-18 2005-09-01 Aixtron Ag CVD-Reaktor mit Fotodioden-Array
US20060027169A1 (en) * 2004-08-06 2006-02-09 Tokyo Electron Limited Method and system for substrate temperature profile control
JP2006113724A (ja) * 2004-10-13 2006-04-27 Omron Corp 制御方法、温度制御方法、温度調節器、熱処理装置、プログラムおよび記録媒体
DE102007023970A1 (de) 2007-05-23 2008-12-04 Aixtron Ag Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate

Also Published As

Publication number Publication date
TW201346061A (zh) 2013-11-16
DE102012101717A1 (de) 2013-09-05
CN104204291B (zh) 2017-12-05
WO2013127891A1 (de) 2013-09-06
CN104204291A (zh) 2014-12-10
TWI571528B (zh) 2017-02-21

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