DE112011102108A5 - Verfahren und Vorrichtung zum Beschichten einer Oberfläche - Google Patents
Verfahren und Vorrichtung zum Beschichten einer Oberfläche Download PDFInfo
- Publication number
- DE112011102108A5 DE112011102108A5 DE112011102108T DE112011102108T DE112011102108A5 DE 112011102108 A5 DE112011102108 A5 DE 112011102108A5 DE 112011102108 T DE112011102108 T DE 112011102108T DE 112011102108 T DE112011102108 T DE 112011102108T DE 112011102108 A5 DE112011102108 A5 DE 112011102108A5
- Authority
- DE
- Germany
- Prior art keywords
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000011248 coating agent Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/082—Electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0822—Multiple sources
- H01J2237/0827—Multiple sources for producing different ions sequentially
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010024543A DE102010024543A1 (de) | 2010-06-22 | 2010-06-22 | Verfahren und Vorrichtung zum Beschichten einer Oberfläche |
DE102010024543.7 | 2010-06-22 | ||
PCT/EP2011/002468 WO2011160749A1 (de) | 2010-06-22 | 2011-05-18 | Verfahren und vorrichtung zum beschichten einer oberfläche |
Publications (1)
Publication Number | Publication Date |
---|---|
DE112011102108A5 true DE112011102108A5 (de) | 2013-04-04 |
Family
ID=44201358
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102010024543A Withdrawn DE102010024543A1 (de) | 2010-06-22 | 2010-06-22 | Verfahren und Vorrichtung zum Beschichten einer Oberfläche |
DE112011102108T Withdrawn DE112011102108A5 (de) | 2010-06-22 | 2011-05-18 | Verfahren und Vorrichtung zum Beschichten einer Oberfläche |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102010024543A Withdrawn DE102010024543A1 (de) | 2010-06-22 | 2010-06-22 | Verfahren und Vorrichtung zum Beschichten einer Oberfläche |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5801390B2 (de) |
KR (1) | KR101780521B1 (de) |
CN (1) | CN102947479B (de) |
DE (2) | DE102010024543A1 (de) |
WO (1) | WO2011160749A1 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103695869A (zh) * | 2013-12-20 | 2014-04-02 | 上海中电振华晶体技术有限公司 | 一种石墨烯薄膜的制备方法 |
DE102014205533A1 (de) * | 2014-03-25 | 2015-10-01 | Waldemar Link Gmbh & Co. Kg | Verfahren zum Aufbringen von geladenen Teilchen auf ein Implantat |
CN105441894A (zh) * | 2015-12-31 | 2016-03-30 | 蚌埠雷诺真空技术有限公司 | 聚焦离子束物理气相沉积装置 |
CN108837962B (zh) * | 2018-07-13 | 2024-02-13 | 金华职业技术学院 | 一种有机分子的真空沉积装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4003448B2 (ja) * | 2001-11-30 | 2007-11-07 | 日新電機株式会社 | 真空アーク蒸着方法及びその装置 |
US6942929B2 (en) * | 2002-01-08 | 2005-09-13 | Nianci Han | Process chamber having component with yttrium-aluminum coating |
JP3803756B2 (ja) * | 2002-11-20 | 2006-08-02 | 独立行政法人日本学術振興会 | クラスターイオン種のソフトランディング方法 |
JP2004232044A (ja) * | 2003-01-31 | 2004-08-19 | National Institute Of Information & Communication Technology | 分子堆積装置及び分子堆積法 |
EP1868255B1 (de) * | 2006-06-14 | 2011-10-19 | Novaled AG | Methode zur Oberflächenbehandlung im Vakuum |
CN101158030A (zh) * | 2007-11-13 | 2008-04-09 | 吴江市天地人真空炉业有限公司 | 离子注入设备 |
-
2010
- 2010-06-22 DE DE102010024543A patent/DE102010024543A1/de not_active Withdrawn
-
2011
- 2011-05-18 WO PCT/EP2011/002468 patent/WO2011160749A1/de active Application Filing
- 2011-05-18 KR KR1020137001611A patent/KR101780521B1/ko active IP Right Grant
- 2011-05-18 CN CN201180029156.7A patent/CN102947479B/zh active Active
- 2011-05-18 JP JP2013515744A patent/JP5801390B2/ja active Active
- 2011-05-18 DE DE112011102108T patent/DE112011102108A5/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN102947479A (zh) | 2013-02-27 |
DE102010024543A1 (de) | 2011-12-22 |
JP2013536315A (ja) | 2013-09-19 |
WO2011160749A1 (de) | 2011-12-29 |
KR20130121080A (ko) | 2013-11-05 |
JP5801390B2 (ja) | 2015-10-28 |
CN102947479B (zh) | 2015-11-25 |
KR101780521B1 (ko) | 2017-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R005 | Application deemed withdrawn due to failure to request examination |