DE102011113732B4 - Stabilisierte, konzentrierbare chemisch-mechanische Polierzusammensetzung und Verfahren zum Polieren eines Substrats - Google Patents

Stabilisierte, konzentrierbare chemisch-mechanische Polierzusammensetzung und Verfahren zum Polieren eines Substrats Download PDF

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Publication number
DE102011113732B4
DE102011113732B4 DE102011113732.0A DE102011113732A DE102011113732B4 DE 102011113732 B4 DE102011113732 B4 DE 102011113732B4 DE 102011113732 A DE102011113732 A DE 102011113732A DE 102011113732 B4 DE102011113732 B4 DE 102011113732B4
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DE
Germany
Prior art keywords
mechanical polishing
chemical mechanical
polishing composition
weight
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102011113732.0A
Other languages
German (de)
English (en)
Other versions
DE102011113732A1 (de
Inventor
Zhendong Liu
Yi Guo
Kancharla-Arun Kumar Reddy
Guangyun Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of DE102011113732A1 publication Critical patent/DE102011113732A1/de
Application granted granted Critical
Publication of DE102011113732B4 publication Critical patent/DE102011113732B4/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE102011113732.0A 2010-09-20 2011-09-16 Stabilisierte, konzentrierbare chemisch-mechanische Polierzusammensetzung und Verfahren zum Polieren eines Substrats Expired - Fee Related DE102011113732B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/885,748 US8568610B2 (en) 2010-09-20 2010-09-20 Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US12/885,748 2010-09-20

Publications (2)

Publication Number Publication Date
DE102011113732A1 DE102011113732A1 (de) 2012-07-12
DE102011113732B4 true DE102011113732B4 (de) 2022-05-25

Family

ID=45789376

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102011113732.0A Expired - Fee Related DE102011113732B4 (de) 2010-09-20 2011-09-16 Stabilisierte, konzentrierbare chemisch-mechanische Polierzusammensetzung und Verfahren zum Polieren eines Substrats

Country Status (7)

Country Link
US (1) US8568610B2 (enExample)
JP (1) JP6019523B2 (enExample)
KR (1) KR101718813B1 (enExample)
CN (1) CN102559062A (enExample)
DE (1) DE102011113732B4 (enExample)
FR (1) FR2964973B1 (enExample)
TW (1) TWI506105B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232208B2 (en) 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
JP7157651B2 (ja) * 2017-12-27 2022-10-20 ニッタ・デュポン株式会社 研磨用組成物
JP2020203980A (ja) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 化学機械研磨組成物、リンス組成物、化学機械研磨方法及びリンス方法
IT202100027467A1 (it) * 2021-10-26 2023-04-26 St Microelectronics Srl Processo di cmp applicato ad una fetta sottile in sic per il rilascio dello stress e il recupero di danni
KR20250086412A (ko) 2023-12-06 2025-06-13 남희 새지 않는 연고 용기

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20080203354A1 (en) 2007-02-26 2008-08-28 Fujifilm Corporation Polishing liquid
US20080246957A1 (en) 2007-04-05 2008-10-09 Department Of The Navy Hybrid fiber optic transceiver optical subassembly
US20090246957A1 (en) 2008-03-27 2009-10-01 Fujifilm Corporation Polishing liquid and polishing method
DE102010018423A1 (de) 2009-04-29 2010-11-04 Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark Verfahren zum chemisch-mechanischen Polieren eines Substrats

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
KR100378180B1 (ko) 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
JP2004342751A (ja) * 2003-05-14 2004-12-02 Toshiba Corp Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
US7300480B2 (en) * 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
JP4798134B2 (ja) * 2005-10-12 2011-10-19 日立化成工業株式会社 Ｃｍｐ用研磨液及び研磨方法
US7842192B2 (en) 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
JPWO2007123235A1 (ja) * 2006-04-24 2009-09-10 日立化成工業株式会社 Ｃｍｐ用研磨液及び研磨方法
US20080220610A1 (en) 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
CN101168647A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种用于抛光多晶硅的化学机械抛光液
JP5285866B2 (ja) * 2007-03-26 2013-09-11 富士フイルム株式会社 研磨液
CN101280158A (zh) * 2007-04-06 2008-10-08 安集微电子（上海）有限公司 多晶硅化学机械抛光液
JP5371207B2 (ja) * 2007-06-08 2013-12-18 富士フイルム株式会社 研磨液及び研磨方法
US20090291873A1 (en) * 2008-05-22 2009-11-26 Air Products And Chemicals, Inc. Method and Composition for Post-CMP Cleaning of Copper Interconnects Comprising Noble Metal Barrier Layers
CN101665662A (zh) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 一种化学机械抛光液

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20080203354A1 (en) 2007-02-26 2008-08-28 Fujifilm Corporation Polishing liquid
US20080246957A1 (en) 2007-04-05 2008-10-09 Department Of The Navy Hybrid fiber optic transceiver optical subassembly
US20090246957A1 (en) 2008-03-27 2009-10-01 Fujifilm Corporation Polishing liquid and polishing method
DE102010018423A1 (de) 2009-04-29 2010-11-04 Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark Verfahren zum chemisch-mechanischen Polieren eines Substrats

Also Published As

Publication number Publication date
TWI506105B (zh) 2015-11-01
KR101718813B1 (ko) 2017-03-22
CN102559062A (zh) 2012-07-11
US8568610B2 (en) 2013-10-29
KR20140014332A (ko) 2014-02-06
FR2964973B1 (fr) 2017-09-01
DE102011113732A1 (de) 2012-07-12
FR2964973A1 (fr) 2012-03-23
JP6019523B2 (ja) 2016-11-02
US20120070989A1 (en) 2012-03-22
TW201224089A (en) 2012-06-16
JP2012109534A (ja) 2012-06-07

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R409 Internal rectification of the legal status completed
R409 Internal rectification of the legal status completed
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R018 Grant decision by examination section/examining division
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee