CN102559062A - 稳定的、可浓缩的化学机械抛光组合物和抛光基材的方法 - Google Patents

稳定的、可浓缩的化学机械抛光组合物和抛光基材的方法 Download PDF

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Publication number
CN102559062A
CN102559062A CN2011103543330A CN201110354333A CN102559062A CN 102559062 A CN102559062 A CN 102559062A CN 2011103543330 A CN2011103543330 A CN 2011103543330A CN 201110354333 A CN201110354333 A CN 201110354333A CN 102559062 A CN102559062 A CN 102559062A
Authority
CN
China
Prior art keywords
chemical mechanical
mechanical polishing
polishing composition
formula
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011103543330A
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English (en)
Chinese (zh)
Inventor
刘振东
郭毅
K-A·K·雷迪
张广云
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
Original Assignee
ROHM AND HAAS ELECTRONIC MATER
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ROHM AND HAAS ELECTRONIC MATER filed Critical ROHM AND HAAS ELECTRONIC MATER
Publication of CN102559062A publication Critical patent/CN102559062A/zh
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2011103543330A 2010-09-20 2011-09-20 稳定的、可浓缩的化学机械抛光组合物和抛光基材的方法 Pending CN102559062A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/885,748 US8568610B2 (en) 2010-09-20 2010-09-20 Stabilized, concentratable chemical mechanical polishing composition and method of polishing a substrate
US12/885,748 2010-09-20

Publications (1)

Publication Number Publication Date
CN102559062A true CN102559062A (zh) 2012-07-11

Family

ID=45789376

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011103543330A Pending CN102559062A (zh) 2010-09-20 2011-09-20 稳定的、可浓缩的化学机械抛光组合物和抛光基材的方法

Country Status (7)

Country Link
US (1) US8568610B2 (enExample)
JP (1) JP6019523B2 (enExample)
KR (1) KR101718813B1 (enExample)
CN (1) CN102559062A (enExample)
DE (1) DE102011113732B4 (enExample)
FR (1) FR2964973B1 (enExample)
TW (1) TWI506105B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
CN106553119A (zh) * 2015-09-24 2017-04-05 罗门哈斯电子材料Cmp控股股份有限公司 抛光半导体衬底的方法
CN114258421A (zh) * 2019-06-17 2022-03-29 Cmc材料株式会社 化学机械抛光组合物、清洗组合物、化学机械抛光方法和清洗方法
CN116021417A (zh) * 2021-10-26 2023-04-28 意法半导体股份有限公司 应用于薄sic晶片以进行应力释放和损伤恢复的cmp工艺

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8232208B2 (en) 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US8865013B2 (en) * 2011-08-15 2014-10-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing tungsten
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
JP7157651B2 (ja) * 2017-12-27 2022-10-20 ニッタ・デュポン株式会社 研磨用組成物
KR20250086412A (ko) 2023-12-06 2025-06-13 남희 새지 않는 연고 용기

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1616574A (zh) * 2003-09-25 2005-05-18 Cmp罗姆和哈斯电子材料控股公司 高速阻挡层抛光组合物
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
DE102005058271A1 (de) * 2004-12-22 2006-07-13 Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark Selektive Aufschlämmung zum chemisch-mechanischen Polieren
WO2007043517A1 (ja) * 2005-10-12 2007-04-19 Hitachi Chemical Co., Ltd. Ｃｍｐ用研磨液及び研磨方法
US20080203354A1 (en) * 2007-02-26 2008-08-28 Fujifilm Corporation Polishing liquid
JP2008243997A (ja) * 2007-03-26 2008-10-09 Fujifilm Corp 研磨液
WO2008122204A1 (fr) * 2007-04-06 2008-10-16 Anji Microelectronics (Shanghai) Co., Ltd. Liquide de polissage chimico-mecanique pour silicium polycristallin
WO2010025623A1 (zh) * 2008-09-05 2010-03-11 安集微电子科技(上海)有限公司 一种化学机械抛光液

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100378180B1 (ko) 2000-05-22 2003-03-29 삼성전자주식회사 화학기계적 연마 공정용 슬러리 및 이를 이용한 반도체소자의 제조방법
JP2004342751A (ja) * 2003-05-14 2004-12-02 Toshiba Corp Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20070077865A1 (en) 2005-10-04 2007-04-05 Cabot Microelectronics Corporation Method for controlling polysilicon removal
US7842192B2 (en) 2006-02-08 2010-11-30 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-component barrier polishing solution
EP2020680A4 (en) * 2006-04-24 2011-09-21 Hitachi Chemical Co Ltd POLISHING LIQUID FOR CMP AND POLISHING METHOD
US20080220610A1 (en) 2006-06-29 2008-09-11 Cabot Microelectronics Corporation Silicon oxide polishing method utilizing colloidal silica
CN101168647A (zh) * 2006-10-27 2008-04-30 安集微电子（上海）有限公司 一种用于抛光多晶硅的化学机械抛光液
US20080246957A1 (en) 2007-04-05 2008-10-09 Department Of The Navy Hybrid fiber optic transceiver optical subassembly
JP5371207B2 (ja) * 2007-06-08 2013-12-18 富士フイルム株式会社 研磨液及び研磨方法
JP5441345B2 (ja) * 2008-03-27 2014-03-12 富士フイルム株式会社 研磨液、及び研磨方法
US20090291873A1 (en) * 2008-05-22 2009-11-26 Air Products And Chemicals, Inc. Method and Composition for Post-CMP Cleaning of Copper Interconnects Comprising Noble Metal Barrier Layers
US8119529B2 (en) 2009-04-29 2012-02-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing a substrate

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1616574A (zh) * 2003-09-25 2005-05-18 Cmp罗姆和哈斯电子材料控股公司 高速阻挡层抛光组合物
US20050205835A1 (en) * 2004-03-19 2005-09-22 Tamboli Dnyanesh C Alkaline post-chemical mechanical planarization cleaning compositions
DE102005058271A1 (de) * 2004-12-22 2006-07-13 Rohm and Haas Electronic Materials CMP Holdings, Inc., Newark Selektive Aufschlämmung zum chemisch-mechanischen Polieren
WO2007043517A1 (ja) * 2005-10-12 2007-04-19 Hitachi Chemical Co., Ltd. Ｃｍｐ用研磨液及び研磨方法
US20080203354A1 (en) * 2007-02-26 2008-08-28 Fujifilm Corporation Polishing liquid
JP2008243997A (ja) * 2007-03-26 2008-10-09 Fujifilm Corp 研磨液
WO2008122204A1 (fr) * 2007-04-06 2008-10-16 Anji Microelectronics (Shanghai) Co., Ltd. Liquide de polissage chimico-mecanique pour silicium polycristallin
WO2010025623A1 (zh) * 2008-09-05 2010-03-11 安集微电子科技(上海)有限公司 一种化学机械抛光液

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104650739A (zh) * 2013-11-22 2015-05-27 安集微电子（上海）有限公司 一种用于抛光二氧化硅基材的化学机械抛光液
CN106553119A (zh) * 2015-09-24 2017-04-05 罗门哈斯电子材料Cmp控股股份有限公司 抛光半导体衬底的方法
CN106553119B (zh) * 2015-09-24 2019-05-28 罗门哈斯电子材料Cmp控股股份有限公司 抛光半导体衬底的方法
CN114258421A (zh) * 2019-06-17 2022-03-29 Cmc材料株式会社 化学机械抛光组合物、清洗组合物、化学机械抛光方法和清洗方法
CN116021417A (zh) * 2021-10-26 2023-04-28 意法半导体股份有限公司 应用于薄sic晶片以进行应力释放和损伤恢复的cmp工艺

Also Published As

Publication number Publication date
JP6019523B2 (ja) 2016-11-02
DE102011113732A1 (de) 2012-07-12
US8568610B2 (en) 2013-10-29
US20120070989A1 (en) 2012-03-22
FR2964973B1 (fr) 2017-09-01
KR20140014332A (ko) 2014-02-06
KR101718813B1 (ko) 2017-03-22
TWI506105B (zh) 2015-11-01
DE102011113732B4 (de) 2022-05-25
FR2964973A1 (fr) 2012-03-23
TW201224089A (en) 2012-06-16
JP2012109534A (ja) 2012-06-07

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Application publication date: 20120711