DE102011055604A1 - Funktionalisierte Festkörperoberflächen von Metallen, Halbleitern und Isolatoren mit Nanostrukturen - Google Patents
Funktionalisierte Festkörperoberflächen von Metallen, Halbleitern und Isolatoren mit Nanostrukturen Download PDFInfo
- Publication number
- DE102011055604A1 DE102011055604A1 DE102011055604A DE102011055604A DE102011055604A1 DE 102011055604 A1 DE102011055604 A1 DE 102011055604A1 DE 102011055604 A DE102011055604 A DE 102011055604A DE 102011055604 A DE102011055604 A DE 102011055604A DE 102011055604 A1 DE102011055604 A1 DE 102011055604A1
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- Germany
- Prior art keywords
- amorphous
- crystalline
- solid
- foreign atoms
- layer
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- 239000007787 solid Substances 0.000 title claims abstract description 130
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000002086 nanomaterial Substances 0.000 title claims description 17
- 239000012212 insulator Substances 0.000 title claims description 10
- 229910052751 metal Inorganic materials 0.000 title abstract description 13
- 239000002184 metal Substances 0.000 title abstract description 13
- 150000002739 metals Chemical class 0.000 title abstract description 10
- 238000007669 thermal treatment Methods 0.000 claims abstract description 63
- 239000012535 impurity Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
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- 239000002105 nanoparticle Substances 0.000 claims description 13
- 238000002360 preparation method Methods 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 8
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- 239000000203 mixture Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000011343 solid material Substances 0.000 claims description 4
- 230000008646 thermal stress Effects 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 2
- 238000005280 amorphization Methods 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000035515 penetration Effects 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 230000002745 absorbent Effects 0.000 claims 3
- 239000002250 absorbent Substances 0.000 claims 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
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- 238000001816 cooling Methods 0.000 claims 1
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- 238000005516 engineering process Methods 0.000 abstract description 2
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- 239000010410 layer Substances 0.000 description 78
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- 229910052710 silicon Inorganic materials 0.000 description 13
- 229910052748 manganese Inorganic materials 0.000 description 12
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000005224 laser annealing Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
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- 230000008901 benefit Effects 0.000 description 3
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- 238000005191 phase separation Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
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- 238000005204 segregation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- UVTGXFAWNQTDBG-UHFFFAOYSA-N [Fe].[Pb] Chemical compound [Fe].[Pb] UVTGXFAWNQTDBG-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000005298 paramagnetic effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- -1 quantum wires Substances 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011055604A DE102011055604A1 (de) | 2011-11-22 | 2011-11-22 | Funktionalisierte Festkörperoberflächen von Metallen, Halbleitern und Isolatoren mit Nanostrukturen |
| PCT/DE2012/200077 WO2013075712A1 (fr) | 2011-11-22 | 2012-11-22 | Surfaces de solides à base de systèmes à deux ou à plusieurs composants présentant des nanostructures composites, constitués de métaux, de semi-conducteurs ou d'isolants |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011055604A DE102011055604A1 (de) | 2011-11-22 | 2011-11-22 | Funktionalisierte Festkörperoberflächen von Metallen, Halbleitern und Isolatoren mit Nanostrukturen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102011055604A1 true DE102011055604A1 (de) | 2013-05-23 |
Family
ID=47557000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102011055604A Withdrawn DE102011055604A1 (de) | 2011-11-22 | 2011-11-22 | Funktionalisierte Festkörperoberflächen von Metallen, Halbleitern und Isolatoren mit Nanostrukturen |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE102011055604A1 (fr) |
| WO (1) | WO2013075712A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687359A (zh) * | 2020-12-25 | 2021-04-20 | 华中科技大学 | 纳米电流通道层中绝缘绝热材料与纳米晶粒金属材料的筛选与匹配方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012221409A1 (de) * | 2012-11-22 | 2014-05-22 | Helmholtz-Zentrum Dresden - Rossendorf E.V. | Funktionalisierte Festkörperoberflächen aus Zwei- und Mehrstoffsystemen mit Komposit-Nanostrukturen aus Metallen, Halbleitern und Isolatoren |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5918140A (en) * | 1997-06-16 | 1999-06-29 | The Regents Of The University Of California | Deposition of dopant impurities and pulsed energy drive-in |
| EP1738402B1 (fr) * | 2004-07-26 | 2008-09-17 | Jürgen H. Werner | Dopage laser d'elements solides au moyen d'un faisceau laser a focalisation lineaire et fabrication d'emetteurs de cellules solaires basee sur ce procede |
| DE102007017788A1 (de) * | 2007-04-16 | 2008-10-30 | Infineon Technologies Ag | Verfahren zur Herstellung einer Dotierungszone in einem Halbleiterkörper sowie damit hergestelltes Halbleiterbauelement |
| DE102010044480A1 (de) * | 2010-09-03 | 2012-03-08 | Institut Für Photonische Technologien E.V. | Verfahren und Vorrichtung zur Herstellung einer Dünnschichtsolarzelle |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2433647B (en) * | 2005-12-20 | 2008-05-28 | Univ Southampton | Phase change memory materials, devices and methods |
| EP2095400A1 (fr) * | 2006-12-13 | 2009-09-02 | Wriota Pty Ltd | Procédé de dopage de semi-conducteur |
-
2011
- 2011-11-22 DE DE102011055604A patent/DE102011055604A1/de not_active Withdrawn
-
2012
- 2012-11-22 WO PCT/DE2012/200077 patent/WO2013075712A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5918140A (en) * | 1997-06-16 | 1999-06-29 | The Regents Of The University Of California | Deposition of dopant impurities and pulsed energy drive-in |
| EP1738402B1 (fr) * | 2004-07-26 | 2008-09-17 | Jürgen H. Werner | Dopage laser d'elements solides au moyen d'un faisceau laser a focalisation lineaire et fabrication d'emetteurs de cellules solaires basee sur ce procede |
| DE102007017788A1 (de) * | 2007-04-16 | 2008-10-30 | Infineon Technologies Ag | Verfahren zur Herstellung einer Dotierungszone in einem Halbleiterkörper sowie damit hergestelltes Halbleiterbauelement |
| DE102010044480A1 (de) * | 2010-09-03 | 2012-03-08 | Institut Für Photonische Technologien E.V. | Verfahren und Vorrichtung zur Herstellung einer Dünnschichtsolarzelle |
Non-Patent Citations (3)
| Title |
|---|
| Makarovsky, O. u. a.: Direct writing of nanoscale light-emitting diodes. Advanced Materials. 22 (2010), 3176-3180 |
| S.M. Myers [Myers, S. M. u. a.: Mechanisms of transition-metal gettering in silicon. Journal of Applied Physics. 88 (2000), S. 3795-3819] |
| Stanowski, R. u. a.: Laser rapid thermal annealing of quantum semiconductor wafers: a one step bandgap engineering technique. Applied Physics A: Materials Science & Processing. 94 (2009), Heft 3, 667-674 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687359A (zh) * | 2020-12-25 | 2021-04-20 | 华中科技大学 | 纳米电流通道层中绝缘绝热材料与纳米晶粒金属材料的筛选与匹配方法 |
| CN112687359B (zh) * | 2020-12-25 | 2024-02-09 | 华中科技大学 | 纳米电流通道层中绝缘绝热材料与纳米晶粒金属材料的筛选与匹配方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013075712A1 (fr) | 2013-05-30 |
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