DE102011004441B4 - Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten - Google Patents

Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten Download PDF

Info

Publication number
DE102011004441B4
DE102011004441B4 DE102011004441.8A DE102011004441A DE102011004441B4 DE 102011004441 B4 DE102011004441 B4 DE 102011004441B4 DE 102011004441 A DE102011004441 A DE 102011004441A DE 102011004441 B4 DE102011004441 B4 DE 102011004441B4
Authority
DE
Germany
Prior art keywords
substrate
coating
temperature
chamber
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102011004441.8A
Other languages
German (de)
English (en)
Other versions
DE102011004441A1 (de
Inventor
Dr. Harr Michael
Dr. Richter Hilmar
Stefan Bossert
Ralf Steudten
Steffen George
Sebastian Tittel
Werner Schade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTF Solar GmbH
Original Assignee
CTF Solar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102011004441.8A priority Critical patent/DE102011004441B4/de
Application filed by CTF Solar GmbH filed Critical CTF Solar GmbH
Priority to DE202011110836.1U priority patent/DE202011110836U1/de
Priority to US14/000,709 priority patent/US20140087546A1/en
Priority to EP12706517.5A priority patent/EP2678461B1/de
Priority to JP2013553963A priority patent/JP6117116B2/ja
Priority to PCT/EP2012/052860 priority patent/WO2012113750A1/de
Priority to CN201280009871.9A priority patent/CN103415646B/zh
Priority to KR1020137025001A priority patent/KR101945003B1/ko
Priority to TW101105739A priority patent/TWI460876B/zh
Publication of DE102011004441A1 publication Critical patent/DE102011004441A1/de
Application granted granted Critical
Publication of DE102011004441B4 publication Critical patent/DE102011004441B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23Oxides
    • C03C17/245Oxides by deposition from the vapour phase
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001General methods for coating; Devices therefor
    • C03C17/002General methods for coating; Devices therefor for flat glass, e.g. float glass
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3464Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
    • C03C17/3476Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a selenide or telluride
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623Sulfides, selenides or tellurides
    • C23C14/0629Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02557Sulfides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02562Tellurides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02568Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/125The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/137Batch treatment of the devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/139Manufacture or treatment of devices covered by this subclass using temporary substrates
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00Methods for coating glass
    • C03C2218/10Deposition methods
    • C03C2218/15Deposition methods from the vapour phase
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
DE102011004441.8A 2011-02-21 2011-02-21 Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten Active DE102011004441B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE202011110836.1U DE202011110836U1 (de) 2011-02-21 2011-02-21 Vorrichtung zur Beschichtung von Substraten
DE102011004441.8A DE102011004441B4 (de) 2011-02-21 2011-02-21 Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten
EP12706517.5A EP2678461B1 (de) 2011-02-21 2012-02-20 Verfahren und vorrichtung zur beschichtung von substraten
JP2013553963A JP6117116B2 (ja) 2011-02-21 2012-02-20 基体のコーティングのための方法および装置
US14/000,709 US20140087546A1 (en) 2011-02-21 2012-02-20 Method and device for coating substrates
PCT/EP2012/052860 WO2012113750A1 (de) 2011-02-21 2012-02-20 Verfahren und vorrichtung zur beschichtung von substraten
CN201280009871.9A CN103415646B (zh) 2011-02-21 2012-02-20 用于涂覆基材的方法和设备
KR1020137025001A KR101945003B1 (ko) 2011-02-21 2012-02-20 기판 상에 필름을 부착시키는 방법 및 장치
TW101105739A TWI460876B (zh) 2011-02-21 2012-02-21 用於基板覆層的方法和設備

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102011004441.8A DE102011004441B4 (de) 2011-02-21 2011-02-21 Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten

Publications (2)

Publication Number Publication Date
DE102011004441A1 DE102011004441A1 (de) 2012-08-23
DE102011004441B4 true DE102011004441B4 (de) 2016-09-01

Family

ID=45774172

Family Applications (2)

Application Number Title Priority Date Filing Date
DE202011110836.1U Expired - Lifetime DE202011110836U1 (de) 2011-02-21 2011-02-21 Vorrichtung zur Beschichtung von Substraten
DE102011004441.8A Active DE102011004441B4 (de) 2011-02-21 2011-02-21 Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE202011110836.1U Expired - Lifetime DE202011110836U1 (de) 2011-02-21 2011-02-21 Vorrichtung zur Beschichtung von Substraten

Country Status (8)

Country Link
US (1) US20140087546A1 (enExample)
EP (1) EP2678461B1 (enExample)
JP (1) JP6117116B2 (enExample)
KR (1) KR101945003B1 (enExample)
CN (1) CN103415646B (enExample)
DE (2) DE202011110836U1 (enExample)
TW (1) TWI460876B (enExample)
WO (1) WO2012113750A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104694882A (zh) * 2015-03-19 2015-06-10 中国建材国际工程集团有限公司 用于基板镀膜的工艺方法
CN106929824A (zh) * 2015-12-29 2017-07-07 中国建材国际工程集团有限公司 清洁覆层设施中基底运输机构的方法和设备以及覆层设施
CN106517809B (zh) * 2016-11-08 2019-03-22 苏州蓝锐纳米科技有限公司 一种ar镀膜液涂布光伏玻璃的辊筒镀膜装置
US20180202041A1 (en) * 2017-01-18 2018-07-19 GM Global Technology Operations LLC Method and system for manufacturing a stainless steel substrate with a corrosion resistant coating
CN108109943B (zh) * 2017-12-15 2020-05-19 安徽省繁昌县皖南阀门铸造有限公司 一种涂布设备的热处理腔室
CN109576646B (zh) * 2018-12-21 2024-05-31 上海祖强能源有限公司 一种镀膜装置和镀膜方法
CN113394148B (zh) * 2021-06-15 2022-09-20 深圳市创一智能装备有限公司 一种太阳能电池的布料装置
DE102021125463A1 (de) 2021-09-30 2023-03-30 Heliatek Gmbh Verfahren zum indirekten thermischen Erwärmen eines Substrats
CN114042589B (zh) * 2021-10-15 2023-04-21 山东泉为新能源科技有限公司 高分子材料增强太阳能电池原材性能的处理设备
CN118231299B (zh) * 2024-05-20 2024-08-13 沈阳芯达科技有限公司 一种复合热板加热装置及其方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3417597A1 (de) * 1983-05-13 1984-11-15 Glaverbel, Brüssel/Bruxelles Verfahren zur herstellung von beschichtetem flachglas
DE3422105A1 (de) * 1983-06-17 1985-01-03 Glaverbel, Brüssel/Bruxelles Beschichten von heissem glas mit metallen oder metallverbindungen, insbesondere oxiden
DE4132882A1 (de) * 1991-10-03 1993-04-29 Battelle Institut E V Verfahren zur herstellung von pn cdte/cds-duennschichtsolarzellen
WO2003032406A2 (en) * 2001-10-05 2003-04-17 Solar Systems & Equipments S.R.L. A process for large-scale production of cdte/cds thin film solar cells
WO2003054975A2 (en) * 2001-12-13 2003-07-03 Enitecnologie S.P.A. Baking oven for photovoltaic devices
WO2010012890A2 (fr) * 2008-07-30 2010-02-04 Fives Stein Unite et procede de traitements de surface de verre plat avec conditionnement thermique du verre
WO2011010685A1 (ja) * 2009-07-24 2011-01-27 日本電気硝子株式会社 太陽電池用導電膜付ガラス基板

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637251A (en) * 1979-08-31 1981-04-10 Nippon Sheet Glass Co Ltd Manufacture of covered glass
US4448296A (en) * 1981-09-08 1984-05-15 Buckhorn Material Handling Group Inc. Live guide system for gravity conveyors
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JPH0925575A (ja) * 1995-07-10 1997-01-28 Chugai Ro Co Ltd Ito膜の成膜方法
US6423565B1 (en) * 2000-05-30 2002-07-23 Kurt L. Barth Apparatus and processes for the massproduction of photovotaic modules
JP4768147B2 (ja) * 2001-04-27 2011-09-07 Nec液晶テクノロジー株式会社 液晶表示装置の製造装置
JP4704605B2 (ja) * 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
JP2003292154A (ja) * 2002-04-04 2003-10-15 Noritake Co Ltd 厚膜印刷基板用熱処理装置および搬送ローラ
JP2003306226A (ja) * 2002-04-12 2003-10-28 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
JP2005256094A (ja) * 2004-03-11 2005-09-22 Seiko Epson Corp 成膜装置
CN101636522B (zh) * 2007-03-02 2011-11-30 欧瑞康太阳能股份公司(特吕巴赫) 真空涂覆装置
KR100897548B1 (ko) * 2007-05-14 2009-05-15 세메스 주식회사 기판 반송 장치 및 상기 장치에 사용되는 기판 가이드 유닛
JP2009105130A (ja) * 2007-10-22 2009-05-14 Canon Inc 光起電力素子の製造方法
DE112009001885T5 (de) * 2008-08-05 2011-05-19 ULVAC, Inc., Chigasaki-shi Vakuumbearbeitungsvorrichtung und Vakuumbearbeitungsverfahren
US20100055826A1 (en) * 2008-08-26 2010-03-04 General Electric Company Methods of Fabrication of Solar Cells Using High Power Pulsed Magnetron Sputtering
KR20100075336A (ko) * 2008-12-24 2010-07-02 진중 김 대면적 구리,인디움,갈륨,셀레니움 화합물 태양전지의 광흡수층 연속 하향식 증착 장비
TW201104882A (en) * 2009-07-24 2011-02-01 Auria Solar Co Ltd Thin film solar cell and manufacturing method thereof
US20120006263A1 (en) * 2009-08-06 2012-01-12 Sumitomo Electric Industries, Ltd. Film deposition apparatus
US8303779B2 (en) * 2009-12-16 2012-11-06 Primestar Solar, Inc. Methods for forming a transparent conductive oxide layer on a substrate
US8361232B2 (en) * 2010-04-29 2013-01-29 Primestar Solar, Inc. Vapor deposition apparatus and process for continuous indirect deposition of a thin film layer on a substrate

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3417597A1 (de) * 1983-05-13 1984-11-15 Glaverbel, Brüssel/Bruxelles Verfahren zur herstellung von beschichtetem flachglas
DE3422105A1 (de) * 1983-06-17 1985-01-03 Glaverbel, Brüssel/Bruxelles Beschichten von heissem glas mit metallen oder metallverbindungen, insbesondere oxiden
DE4132882A1 (de) * 1991-10-03 1993-04-29 Battelle Institut E V Verfahren zur herstellung von pn cdte/cds-duennschichtsolarzellen
US5304499A (en) * 1991-10-03 1994-04-19 Battelle-Institut E.V. Methods of making pn CdTe/CdS thin film solar cells
WO2003032406A2 (en) * 2001-10-05 2003-04-17 Solar Systems & Equipments S.R.L. A process for large-scale production of cdte/cds thin film solar cells
WO2003054975A2 (en) * 2001-12-13 2003-07-03 Enitecnologie S.P.A. Baking oven for photovoltaic devices
WO2010012890A2 (fr) * 2008-07-30 2010-02-04 Fives Stein Unite et procede de traitements de surface de verre plat avec conditionnement thermique du verre
WO2011010685A1 (ja) * 2009-07-24 2011-01-27 日本電気硝子株式会社 太陽電池用導電膜付ガラス基板

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Technisches Datenblatt. unbekannt, Google [online]. *

Also Published As

Publication number Publication date
WO2012113750A1 (de) 2012-08-30
US20140087546A1 (en) 2014-03-27
EP2678461B1 (de) 2015-04-01
DE102011004441A1 (de) 2012-08-23
JP2014506960A (ja) 2014-03-20
DE202011110836U1 (de) 2016-09-02
EP2678461A1 (de) 2014-01-01
CN103415646A (zh) 2013-11-27
JP6117116B2 (ja) 2017-04-19
KR20140015391A (ko) 2014-02-06
KR101945003B1 (ko) 2019-02-01
TWI460876B (zh) 2014-11-11
TW201251098A (en) 2012-12-16
CN103415646B (zh) 2016-05-11

Similar Documents

Publication Publication Date Title
DE102011004441B4 (de) Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten
DE102010061259B4 (de) Modulares System und Verfahren zur kontinuierlichen Abscheidung einer dünnen Filmschicht auf einem Substrat
EP2414297B1 (de) Verfahren und vorrichtung zur keramisierung von gläsern
DE102012200665B4 (de) Verfahren zur Herstellung eines niedrigemittierenden Schichtsystems
DE202010018224U1 (de) Anlage zum Aufbringen und zur Wärmebehandlung von dünnen Schichten
DE102012102367A1 (de) Dynamisches System zum variablen Erhitzen und Kühlen von linear beförderten Substraten
EP2304365B1 (de) Wärmeisolationsanordnung mit variablem wärmeisolationsvermögen und deren verwendung sowie vorrichtung und verfahren zur herstellung von ein- oder multikristallinen oder glasigen materialien
EP2875530B1 (de) Vermeidung von glasverbiegung bei thermischen verfahren
EP2815426B1 (de) Prozessbox, anordnungen und verfahren zum prozessieren beschichteter substrate
EP2358647B1 (de) Verfahren und vorrichtung zur herstellung von flachglas
EP2031659A1 (de) Verfahren zur Erzeugung eines metallischen Rückkontaktes eines Halbleiterbauelements, insbesondere einer Solarzelle
DE102011005760B4 (de) Verfahren zur Herstellung und Behandlung einer optisch streuenden TCO-Schicht auf einem Substrat
DE3887689T2 (de) Substrat für solarzelle und herstellungsverfahren.
DE102008009337B4 (de) Verfahren zur Herstellung einer transparenten leitfähigen Schicht
DE102004060737A1 (de) Verfahren zur Herstellung von halbleitenden oder photovoltaisch aktiven Filmen
DE102005043303B4 (de) Verfahren zur Rekristallisierung von Schichtstrukturen mittels Zonenschmelzen und dessen Verwendung
WO2009030374A1 (de) Verfahren zur erzeugung eines metallischen rückkontaktes eines halbleiterbauelements, insbesondere einer solarzelle
DE102012105419A1 (de) Nicht-verbundene drehende Halbleitertargets und Verfahren zu ihrer Sputterung
DE102013225669B4 (de) Verfahren zur Herstellung eines Halbzeugs für Dünnschichtsolarzellen
WO2019034574A1 (de) Verfahren zur herstellung ultradünner schichten auf substraten
EP3039721B1 (de) Haftvermittlerschicht für dünnschichtsolarzellen
DE102012206591A1 (de) Temperiereinrichtung und Vakuumsubstratbehandlungsanlage
DE102011005753B4 (de) Verfahren zur Herstellung einer dotierten, transparenten und leitfähigen Metalloxid-Schicht auf einem Substrat
DE102014200739B4 (de) Lochblende mit optimiertem thermischem Emissionsverhalten
CH705061A1 (de) Substrat für Dünnschichtsolarzellen, Verfahren zu dessen Herstellung sowie Dünnschichtsolarzelle.

Legal Events

Date Code Title Description
R138 Derivation of utility model

Ref document number: 202011110836

Country of ref document: DE

R163 Identified publications notified
R081 Change of applicant/patentee

Owner name: CTF SOLAR GMBH, DE

Free format text: FORMER OWNER: ROTH & RAU AG, 09337 HOHENSTEIN-ERNSTTHAL, DE

Effective date: 20120718

R082 Change of representative

Representative=s name: KAILUWEIT & UHLEMANN PATENTANWAELTE PARTNERSCH, DE

Effective date: 20120718

Representative=s name: KAILUWEIT & UHLEMANN, PATENTANWAELTE, DE

Effective date: 20120718

R012 Request for examination validly filed

Effective date: 20130201

R016 Response to examination communication
R018 Grant decision by examination section/examining division
R081 Change of applicant/patentee

Owner name: CTF SOLAR GMBH, DE

Free format text: FORMER OWNER: CTF SOLAR GMBH, 01099 DRESDEN, DE

R082 Change of representative

Representative=s name: KAILUWEIT & UHLEMANN PATENTANWAELTE PARTNERSCH, DE

R020 Patent grant now final
R081 Change of applicant/patentee

Owner name: CTF SOLAR GMBH, DE

Free format text: FORMER OWNER: CTF SOLAR GMBH, 01109 DRESDEN, DE

R082 Change of representative

Representative=s name: KAILUWEIT & UHLEMANN PATENTANWAELTE PARTNERSCH, DE