DE102011004441B4 - Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten - Google Patents
Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten Download PDFInfo
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- DE102011004441B4 DE102011004441B4 DE102011004441.8A DE102011004441A DE102011004441B4 DE 102011004441 B4 DE102011004441 B4 DE 102011004441B4 DE 102011004441 A DE102011004441 A DE 102011004441A DE 102011004441 B4 DE102011004441 B4 DE 102011004441B4
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- heating
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- 239000000758 substrate Substances 0.000 title claims abstract description 245
- 238000000576 coating method Methods 0.000 title claims abstract description 124
- 239000011248 coating agent Substances 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 58
- 230000009466 transformation Effects 0.000 title claims abstract description 57
- 239000011521 glass Substances 0.000 title claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 119
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 23
- 239000005361 soda-lime glass Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000000608 laser ablation Methods 0.000 claims description 4
- 238000005488 sandblasting Methods 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 239000006200 vaporizer Substances 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 229910052711 selenium Inorganic materials 0.000 claims 1
- 239000011669 selenium Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 24
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 18
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
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- 238000007665 sagging Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
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- 230000008018 melting Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
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- C03C17/245—Oxides by deposition from the vapour phase
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
- C03C17/3464—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide
- C03C17/3476—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising a chalcogenide comprising a selenide or telluride
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE202011110836.1U DE202011110836U1 (de) | 2011-02-21 | 2011-02-21 | Vorrichtung zur Beschichtung von Substraten |
| DE102011004441.8A DE102011004441B4 (de) | 2011-02-21 | 2011-02-21 | Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten |
| EP12706517.5A EP2678461B1 (de) | 2011-02-21 | 2012-02-20 | Verfahren und vorrichtung zur beschichtung von substraten |
| JP2013553963A JP6117116B2 (ja) | 2011-02-21 | 2012-02-20 | 基体のコーティングのための方法および装置 |
| US14/000,709 US20140087546A1 (en) | 2011-02-21 | 2012-02-20 | Method and device for coating substrates |
| PCT/EP2012/052860 WO2012113750A1 (de) | 2011-02-21 | 2012-02-20 | Verfahren und vorrichtung zur beschichtung von substraten |
| CN201280009871.9A CN103415646B (zh) | 2011-02-21 | 2012-02-20 | 用于涂覆基材的方法和设备 |
| KR1020137025001A KR101945003B1 (ko) | 2011-02-21 | 2012-02-20 | 기판 상에 필름을 부착시키는 방법 및 장치 |
| TW101105739A TWI460876B (zh) | 2011-02-21 | 2012-02-21 | 用於基板覆層的方法和設備 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011004441.8A DE102011004441B4 (de) | 2011-02-21 | 2011-02-21 | Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE102011004441A1 DE102011004441A1 (de) | 2012-08-23 |
| DE102011004441B4 true DE102011004441B4 (de) | 2016-09-01 |
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| DE202011110836.1U Expired - Lifetime DE202011110836U1 (de) | 2011-02-21 | 2011-02-21 | Vorrichtung zur Beschichtung von Substraten |
| DE102011004441.8A Active DE102011004441B4 (de) | 2011-02-21 | 2011-02-21 | Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten |
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| Application Number | Title | Priority Date | Filing Date |
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| DE202011110836.1U Expired - Lifetime DE202011110836U1 (de) | 2011-02-21 | 2011-02-21 | Vorrichtung zur Beschichtung von Substraten |
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| Country | Link |
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| US (1) | US20140087546A1 (enExample) |
| EP (1) | EP2678461B1 (enExample) |
| JP (1) | JP6117116B2 (enExample) |
| KR (1) | KR101945003B1 (enExample) |
| CN (1) | CN103415646B (enExample) |
| DE (2) | DE202011110836U1 (enExample) |
| TW (1) | TWI460876B (enExample) |
| WO (1) | WO2012113750A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104694882A (zh) * | 2015-03-19 | 2015-06-10 | 中国建材国际工程集团有限公司 | 用于基板镀膜的工艺方法 |
| CN106929824A (zh) * | 2015-12-29 | 2017-07-07 | 中国建材国际工程集团有限公司 | 清洁覆层设施中基底运输机构的方法和设备以及覆层设施 |
| CN106517809B (zh) * | 2016-11-08 | 2019-03-22 | 苏州蓝锐纳米科技有限公司 | 一种ar镀膜液涂布光伏玻璃的辊筒镀膜装置 |
| US20180202041A1 (en) * | 2017-01-18 | 2018-07-19 | GM Global Technology Operations LLC | Method and system for manufacturing a stainless steel substrate with a corrosion resistant coating |
| CN108109943B (zh) * | 2017-12-15 | 2020-05-19 | 安徽省繁昌县皖南阀门铸造有限公司 | 一种涂布设备的热处理腔室 |
| CN109576646B (zh) * | 2018-12-21 | 2024-05-31 | 上海祖强能源有限公司 | 一种镀膜装置和镀膜方法 |
| CN113394148B (zh) * | 2021-06-15 | 2022-09-20 | 深圳市创一智能装备有限公司 | 一种太阳能电池的布料装置 |
| DE102021125463A1 (de) | 2021-09-30 | 2023-03-30 | Heliatek Gmbh | Verfahren zum indirekten thermischen Erwärmen eines Substrats |
| CN114042589B (zh) * | 2021-10-15 | 2023-04-21 | 山东泉为新能源科技有限公司 | 高分子材料增强太阳能电池原材性能的处理设备 |
| CN118231299B (zh) * | 2024-05-20 | 2024-08-13 | 沈阳芯达科技有限公司 | 一种复合热板加热装置及其方法 |
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| DE4132882A1 (de) * | 1991-10-03 | 1993-04-29 | Battelle Institut E V | Verfahren zur herstellung von pn cdte/cds-duennschichtsolarzellen |
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| JP4768147B2 (ja) * | 2001-04-27 | 2011-09-07 | Nec液晶テクノロジー株式会社 | 液晶表示装置の製造装置 |
| JP4704605B2 (ja) * | 2001-05-23 | 2011-06-15 | 淳二 城戸 | 連続蒸着装置、蒸着装置及び蒸着方法 |
| JP2003292154A (ja) * | 2002-04-04 | 2003-10-15 | Noritake Co Ltd | 厚膜印刷基板用熱処理装置および搬送ローラ |
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2011
- 2011-02-21 DE DE202011110836.1U patent/DE202011110836U1/de not_active Expired - Lifetime
- 2011-02-21 DE DE102011004441.8A patent/DE102011004441B4/de active Active
-
2012
- 2012-02-20 EP EP12706517.5A patent/EP2678461B1/de active Active
- 2012-02-20 JP JP2013553963A patent/JP6117116B2/ja active Active
- 2012-02-20 KR KR1020137025001A patent/KR101945003B1/ko active Active
- 2012-02-20 WO PCT/EP2012/052860 patent/WO2012113750A1/de not_active Ceased
- 2012-02-20 US US14/000,709 patent/US20140087546A1/en not_active Abandoned
- 2012-02-20 CN CN201280009871.9A patent/CN103415646B/zh active Active
- 2012-02-21 TW TW101105739A patent/TWI460876B/zh active
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| DE4132882A1 (de) * | 1991-10-03 | 1993-04-29 | Battelle Institut E V | Verfahren zur herstellung von pn cdte/cds-duennschichtsolarzellen |
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| WO2003054975A2 (en) * | 2001-12-13 | 2003-07-03 | Enitecnologie S.P.A. | Baking oven for photovoltaic devices |
| WO2010012890A2 (fr) * | 2008-07-30 | 2010-02-04 | Fives Stein | Unite et procede de traitements de surface de verre plat avec conditionnement thermique du verre |
| WO2011010685A1 (ja) * | 2009-07-24 | 2011-01-27 | 日本電気硝子株式会社 | 太陽電池用導電膜付ガラス基板 |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2012113750A1 (de) | 2012-08-30 |
| US20140087546A1 (en) | 2014-03-27 |
| EP2678461B1 (de) | 2015-04-01 |
| DE102011004441A1 (de) | 2012-08-23 |
| JP2014506960A (ja) | 2014-03-20 |
| DE202011110836U1 (de) | 2016-09-02 |
| EP2678461A1 (de) | 2014-01-01 |
| CN103415646A (zh) | 2013-11-27 |
| JP6117116B2 (ja) | 2017-04-19 |
| KR20140015391A (ko) | 2014-02-06 |
| KR101945003B1 (ko) | 2019-02-01 |
| TWI460876B (zh) | 2014-11-11 |
| TW201251098A (en) | 2012-12-16 |
| CN103415646B (zh) | 2016-05-11 |
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