DE102011003213A1 - Halbleiterbauelement mit einer Vielzahl von FET-Zellen - Google Patents

Halbleiterbauelement mit einer Vielzahl von FET-Zellen Download PDF

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Publication number
DE102011003213A1
DE102011003213A1 DE201110003213 DE102011003213A DE102011003213A1 DE 102011003213 A1 DE102011003213 A1 DE 102011003213A1 DE 201110003213 DE201110003213 DE 201110003213 DE 102011003213 A DE102011003213 A DE 102011003213A DE 102011003213 A1 DE102011003213 A1 DE 102011003213A1
Authority
DE
Germany
Prior art keywords
gate
contact
semiconductor component
component according
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE201110003213
Other languages
German (de)
English (en)
Inventor
Oliver Heid
Roland Irsigler
Rudolf Elpelt
Karlheinz Feldrapp
Peter Friedrichs
Christian Hecht
Karlheinz Hölzlein
Reinhold Schörner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE201110003213 priority Critical patent/DE102011003213A1/de
Priority to PCT/EP2012/050766 priority patent/WO2012101030A1/fr
Publication of DE102011003213A1 publication Critical patent/DE102011003213A1/de
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE201110003213 2011-01-26 2011-01-26 Halbleiterbauelement mit einer Vielzahl von FET-Zellen Withdrawn DE102011003213A1 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE201110003213 DE102011003213A1 (de) 2011-01-26 2011-01-26 Halbleiterbauelement mit einer Vielzahl von FET-Zellen
PCT/EP2012/050766 WO2012101030A1 (fr) 2011-01-26 2012-01-19 Composant à semi-conducteurs avec une pluralité de cellules fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE201110003213 DE102011003213A1 (de) 2011-01-26 2011-01-26 Halbleiterbauelement mit einer Vielzahl von FET-Zellen

Publications (1)

Publication Number Publication Date
DE102011003213A1 true DE102011003213A1 (de) 2012-07-26

Family

ID=45524535

Family Applications (1)

Application Number Title Priority Date Filing Date
DE201110003213 Withdrawn DE102011003213A1 (de) 2011-01-26 2011-01-26 Halbleiterbauelement mit einer Vielzahl von FET-Zellen

Country Status (2)

Country Link
DE (1) DE102011003213A1 (fr)
WO (1) WO2012101030A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017110536A1 (de) * 2017-05-15 2018-11-15 Infineon Technologies Ag Halbleitervorrichtung mit breiter Bandlücke, die Gatefinger zwischen Bondpads enthält
CN111029401A (zh) * 2015-05-11 2020-04-17 住友电气工业株式会社 碳化硅单晶衬底、碳化硅半导体器件及其制造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003030247A2 (fr) 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Procede d'etablissement de contact pour des surfaces de contact electriques situees sur un substrat et dispositif constitue d'un substrat pourvu de surfaces de contact electriques

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6344379B1 (en) * 1999-10-22 2002-02-05 Semiconductor Components Industries Llc Semiconductor device with an undulating base region and method therefor
JP4854868B2 (ja) * 2001-06-14 2012-01-18 ローム株式会社 半導体装置
US8155916B2 (en) * 2008-07-07 2012-04-10 Infineon Technologies Ag Semiconductor component and method of determining temperature
JP5733885B2 (ja) * 2008-10-16 2015-06-10 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003030247A2 (fr) 2001-09-28 2003-04-10 Siemens Aktiengesellschaft Procede d'etablissement de contact pour des surfaces de contact electriques situees sur un substrat et dispositif constitue d'un substrat pourvu de surfaces de contact electriques

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111029401A (zh) * 2015-05-11 2020-04-17 住友电气工业株式会社 碳化硅单晶衬底、碳化硅半导体器件及其制造方法
CN111029401B (zh) * 2015-05-11 2024-03-08 住友电气工业株式会社 碳化硅单晶衬底、碳化硅半导体器件及其制造方法
DE102017110536A1 (de) * 2017-05-15 2018-11-15 Infineon Technologies Ag Halbleitervorrichtung mit breiter Bandlücke, die Gatefinger zwischen Bondpads enthält
US11245007B2 (en) 2017-05-15 2022-02-08 Infineon Technologies Ag Wide-bandgap semiconductor device including gate fingers between bond pads
DE102017110536B4 (de) 2017-05-15 2022-06-30 Infineon Technologies Ag Halbleitervorrichtung mit breiter Bandlücke, die Gatefinger zwischen Bondpads enthält, und Halbleitermodul

Also Published As

Publication number Publication date
WO2012101030A1 (fr) 2012-08-02

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R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130801