DE102009024360A1 - Slab-Typ-Laser-Vorrichtung - Google Patents
Slab-Typ-Laser-Vorrichtung Download PDFInfo
- Publication number
- DE102009024360A1 DE102009024360A1 DE102009024360A DE102009024360A DE102009024360A1 DE 102009024360 A1 DE102009024360 A1 DE 102009024360A1 DE 102009024360 A DE102009024360 A DE 102009024360A DE 102009024360 A DE102009024360 A DE 102009024360A DE 102009024360 A1 DE102009024360 A1 DE 102009024360A1
- Authority
- DE
- Germany
- Prior art keywords
- laser
- laser beam
- slab
- amplifier
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000003287 optical effect Effects 0.000 claims description 141
- 230000001172 regenerating effect Effects 0.000 claims description 47
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 24
- 230000003321 amplification Effects 0.000 claims description 21
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 21
- 230000010355 oscillation Effects 0.000 claims description 20
- 230000010363 phase shift Effects 0.000 claims description 15
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 13
- 239000001569 carbon dioxide Substances 0.000 claims description 9
- 230000002745 absorbent Effects 0.000 claims description 5
- 239000002250 absorbent Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 104
- 229910002091 carbon monoxide Inorganic materials 0.000 description 104
- 238000010586 diagram Methods 0.000 description 61
- 230000005540 biological transmission Effects 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 26
- 238000013461 design Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000013077 target material Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 229910000831 Steel Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 230000033001 locomotion Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
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- 239000010959 steel Substances 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 230000003014 reinforcing effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000013519 translation Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 241000700647 Variola virus Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/07—Construction or shape of active medium consisting of a plurality of parts, e.g. segments
- H01S3/073—Gas lasers comprising separate discharge sections in one cavity, e.g. hybrid lasers
- H01S3/076—Folded-path lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
- H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/2232—Carbon dioxide (CO2) or monoxide [CO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2316—Cascaded amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
- H01S3/235—Regenerative amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2375—Hybrid lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Lasers (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008154264 | 2008-06-12 | ||
| JP2008-154264 | 2008-06-12 | ||
| JP2009-029011 | 2009-02-10 | ||
| JP2009029011A JP5758569B2 (ja) | 2008-06-12 | 2009-02-10 | スラブ型レーザ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE102009024360A1 true DE102009024360A1 (de) | 2010-01-07 |
Family
ID=41396907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE102009024360A Ceased DE102009024360A1 (de) | 2008-06-12 | 2009-06-09 | Slab-Typ-Laser-Vorrichtung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7903715B2 (https=) |
| JP (1) | JP5758569B2 (https=) |
| DE (1) | DE102009024360A1 (https=) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010064147A1 (de) | 2010-12-23 | 2012-06-28 | Rofin-Sinar Laser Gmbh | Bandleiter-Laserverstärker und Laseranordnung mit einem Bandleiter-Laserverstärker |
| CN103999301A (zh) * | 2011-12-07 | 2014-08-20 | 三菱电机株式会社 | Co2激光装置及co2激光加工装置 |
| DE102009045703B4 (de) * | 2008-10-16 | 2019-11-14 | Gigaphoton Inc. | Laservorrichtung und Extrem-Ultraviolett-Lichtquellenvorrichtung |
| DE102020113631B3 (de) | 2020-05-20 | 2021-10-21 | Helmut-Schmidt-Universität Universität der Bundeswehr Hamburg | Vorrichtung zur spektralen Verbreiterung eines Laserimpulses und Lasersystem |
| DE102010000032B4 (de) * | 2009-01-14 | 2025-06-12 | Gigaphoton, Inc | Laservorrichtung unter Benutzung eines Laserstrahl-Verstärkers |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7439530B2 (en) * | 2005-06-29 | 2008-10-21 | Cymer, Inc. | LPP EUV light source drive laser system |
| JP5587578B2 (ja) * | 2008-09-26 | 2014-09-10 | ギガフォトン株式会社 | 極端紫外光源装置およびパルスレーザ装置 |
| NL2004837A (en) * | 2009-07-09 | 2011-01-10 | Asml Netherlands Bv | Radiation system and lithographic apparatus. |
| JP5701618B2 (ja) * | 2010-03-04 | 2015-04-15 | ギガフォトン株式会社 | 極端紫外光生成装置 |
| JP5666285B2 (ja) * | 2010-03-15 | 2015-02-12 | ギガフォトン株式会社 | 再生増幅器、レーザ装置および極端紫外光生成装置 |
| JP2012109417A (ja) * | 2010-11-17 | 2012-06-07 | Komatsu Ltd | スラブ型増幅装置、レーザ装置および極端紫外光源装置 |
| JP2012182397A (ja) * | 2011-03-03 | 2012-09-20 | Mitsubishi Electric Corp | レーザ装置およびレーザ加工装置 |
| JP5720405B2 (ja) * | 2011-05-10 | 2015-05-20 | 澁谷工業株式会社 | Ｑスイッチレーザ発振器 |
| JP2013080743A (ja) * | 2011-09-30 | 2013-05-02 | Shibuya Kogyo Co Ltd | レーザ発振装置 |
| JP2013214708A (ja) * | 2012-03-30 | 2013-10-17 | Gigaphoton Inc | レーザ装置、レーザシステムおよび極端紫外光生成装置 |
| WO2013144691A2 (en) * | 2012-03-30 | 2013-10-03 | Gigaphoton Inc. | Amplifier, laser apparatus, and extreme ultraviolet light generation system |
| KR102007639B1 (ko) * | 2012-07-13 | 2019-10-23 | 막스-플랑크-게젤샤프트 츄어 푀르더룽 데어 비쎈샤프텐 에.파우. | 레이저 펄스 증폭 장치 및 그의 증폭 방법 |
| CN103022870B (zh) * | 2012-12-27 | 2015-10-21 | 苏州镭创光电技术有限公司 | 基于板条结构的大功率355nm紫外激光器 |
| CN103066486B (zh) * | 2012-12-27 | 2015-04-22 | 苏州镭创光电技术有限公司 | 基于板条结构的大功率1064nm近红外激光器 |
| CN104051949B (zh) * | 2013-03-15 | 2015-11-04 | 中国科学院理化技术研究所 | 高效紧凑的端面泵浦板条激光放大器装置 |
| GB2505315B (en) * | 2013-08-07 | 2014-08-06 | Rofin Sinar Uk Ltd | Optical amplifier arrangement |
| DE102013225498A1 (de) * | 2013-12-10 | 2015-06-11 | Carl Zeiss Smt Gmbh | Prüfvorrichtung für EUV-Optik |
| US9281651B2 (en) * | 2014-04-30 | 2016-03-08 | Gsi Group Corporation | Laser resonator with parasitic mode suppression |
| CN104319619B (zh) * | 2014-11-20 | 2017-06-16 | 中国科学院理化技术研究所 | 一种基于衍射光栅的激光光束脉冲时序合成装置 |
| RU2713082C2 (ru) * | 2015-07-22 | 2020-02-03 | Академи Оф Опто-Электроникс, Чайнис Академи Оф Сайенсис | Эксимер-лазерная система с конструкцией кольцевого резонатора |
| JP6261057B1 (ja) | 2016-09-07 | 2018-01-17 | 大学共同利用機関法人自然科学研究機構 | 選択増幅装置 |
| WO2018167819A1 (ja) * | 2017-03-13 | 2018-09-20 | 三菱電機株式会社 | 波長多重光送信モジュールおよびその製造方法 |
| US10431952B2 (en) * | 2017-05-11 | 2019-10-01 | Lightsense Ip Ltd. | Compact plasma ultraintense laser |
| CN112057041B (zh) * | 2020-08-07 | 2021-12-28 | 中国科学院深圳先进技术研究院 | 偏振光声成像探头及光声成像装置 |
| DE102021003704A1 (de) * | 2020-10-18 | 2022-04-21 | Keming Du | Multipass-Pumpanordnung für Verstärker und Multipass-Verstärker mit großen Mode-Querschnitt |
| US12126135B2 (en) * | 2020-10-23 | 2024-10-22 | Coherent Kaiserslautern GmbH | Multipass laser amplifier and no-optical-power beam steering element |
| JP7629786B2 (ja) * | 2021-04-09 | 2025-02-14 | パナソニックホールディングス株式会社 | レーザシャッタユニットおよびレーザシステム |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009026854A (ja) | 2007-07-18 | 2009-02-05 | Komatsu Ltd | 極端紫外光源用ドライバレーザ |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1443127A (en) * | 1973-05-23 | 1976-07-21 | Us Energy Research Dev Adminis | Pulsed multiline co2 laser oscillator spparatus and method |
| JPS5239393A (en) * | 1975-09-25 | 1977-03-26 | Hitachi Ltd | Laser oscillation device |
| WO1981002952A1 (fr) * | 1980-04-05 | 1981-10-15 | Eltro Gmbh | Dispositif a laser |
| JP2673510B2 (ja) * | 1987-03-19 | 1997-11-05 | 株式会社小松製作所 | エキシマレーザ装置 |
| JPH0548189A (ja) * | 1991-08-09 | 1993-02-26 | Toshiba Corp | 露光光源用レ−ザ発振装置 |
| JP3538445B2 (ja) * | 1993-11-29 | 2004-06-14 | 東京電力株式会社 | レーザビーム伝送装置 |
| JPH09246632A (ja) * | 1996-03-05 | 1997-09-19 | Kawasaki Heavy Ind Ltd | 気体レーザ共振器 |
| DE19609851A1 (de) * | 1996-03-13 | 1997-09-18 | Rofin Sinar Laser Gmbh | Bandleiterlaser |
| JPH1126840A (ja) * | 1997-06-27 | 1999-01-29 | Shibuya Kogyo Co Ltd | レーザ装置 |
| JPH1168213A (ja) * | 1997-08-26 | 1999-03-09 | Nippon Steel Corp | Ｑスイッチｃｏ２レーザ装置 |
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- 2009-06-11 US US12/482,824 patent/US7903715B2/en active Active
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009045703B4 (de) * | 2008-10-16 | 2019-11-14 | Gigaphoton Inc. | Laservorrichtung und Extrem-Ultraviolett-Lichtquellenvorrichtung |
| DE102010000032B4 (de) * | 2009-01-14 | 2025-06-12 | Gigaphoton, Inc | Laservorrichtung unter Benutzung eines Laserstrahl-Verstärkers |
| DE102010064147A1 (de) | 2010-12-23 | 2012-06-28 | Rofin-Sinar Laser Gmbh | Bandleiter-Laserverstärker und Laseranordnung mit einem Bandleiter-Laserverstärker |
| WO2012084425A1 (de) | 2010-12-23 | 2012-06-28 | Rofin-Sinar Laser Gmbh | Bandleiter-laserverstärker und laseranordnung mit einem bandleiter-laserverstärker |
| DE102010064147B4 (de) * | 2010-12-23 | 2013-09-12 | Rofin-Sinar Laser Gmbh | Bandleiter-Laserverstärker und Laseranordnung mit einem Bandleiter-Laserverstärker |
| CN103999301A (zh) * | 2011-12-07 | 2014-08-20 | 三菱电机株式会社 | Co2激光装置及co2激光加工装置 |
| CN103999301B (zh) * | 2011-12-07 | 2016-08-24 | 三菱电机株式会社 | Co2激光装置及co2激光加工装置 |
| DE112012005144B4 (de) * | 2011-12-07 | 2018-07-05 | Mitsubishi Electric Corporation | CO2 Laservorrichtung und Materialbearbeitungsvorrichtung |
| DE102020113631B3 (de) | 2020-05-20 | 2021-10-21 | Helmut-Schmidt-Universität Universität der Bundeswehr Hamburg | Vorrichtung zur spektralen Verbreiterung eines Laserimpulses und Lasersystem |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010021518A (ja) | 2010-01-28 |
| US7903715B2 (en) | 2011-03-08 |
| JP5758569B2 (ja) | 2015-08-05 |
| US20090316746A1 (en) | 2009-12-24 |
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