DE102008027045A1 - Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode - Google Patents

Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode Download PDF

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Publication number
DE102008027045A1
DE102008027045A1 DE102008027045A DE102008027045A DE102008027045A1 DE 102008027045 A1 DE102008027045 A1 DE 102008027045A1 DE 102008027045 A DE102008027045 A DE 102008027045A DE 102008027045 A DE102008027045 A DE 102008027045A DE 102008027045 A1 DE102008027045 A1 DE 102008027045A1
Authority
DE
Germany
Prior art keywords
layer
emitting diode
light
semiconductor
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102008027045A
Other languages
German (de)
English (en)
Inventor
Magnus Ahlstedt
Johannes Dr. Baur
Ulrich Dr. Zehnder
Martin Dr. Straßburg
Matthias Dr. Sabathil
Berthold Dr. Hahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102008027045A priority Critical patent/DE102008027045A1/de
Priority to US12/920,311 priority patent/US8772804B2/en
Priority to CN200980107062.XA priority patent/CN101960623B/zh
Priority to PCT/DE2009/000192 priority patent/WO2009106038A1/de
Priority to EP09714695.5A priority patent/EP2248191B1/de
Priority to JP2010547944A priority patent/JP2011513955A/ja
Priority to KR1020107019171A priority patent/KR101645738B1/ko
Priority to KR1020167014288A priority patent/KR101935642B1/ko
Priority to TW098105936A priority patent/TWI394297B/zh
Publication of DE102008027045A1 publication Critical patent/DE102008027045A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Led Devices (AREA)
DE102008027045A 2008-02-29 2008-06-06 Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode Withdrawn DE102008027045A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE102008027045A DE102008027045A1 (de) 2008-02-29 2008-06-06 Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode
US12/920,311 US8772804B2 (en) 2008-02-29 2009-02-11 Semiconductor light-emitting diode and method for producing a semiconductor light-emitting diode
CN200980107062.XA CN101960623B (zh) 2008-02-29 2009-02-11 半导体发光二极管和用于制造半导体发光二极管的方法
PCT/DE2009/000192 WO2009106038A1 (de) 2008-02-29 2009-02-11 Halbleiterleuchtdiode und verfahren zur herstellung einer halbleiterleuchtdiode
EP09714695.5A EP2248191B1 (de) 2008-02-29 2009-02-11 Halbleiterleuchtdiode und verfahren zur herstellung einer halbleiterleuchtdiode
JP2010547944A JP2011513955A (ja) 2008-02-29 2009-02-11 半導体発光ダイオードおよび半導体発光ダイオードの製造方法
KR1020107019171A KR101645738B1 (ko) 2008-02-29 2009-02-11 반도체 발광 다이오드 및 반도체 발광 다이오드의 제조 방법
KR1020167014288A KR101935642B1 (ko) 2008-02-29 2009-02-11 반도체 발광 다이오드 및 반도체 발광 다이오드의 제조 방법
TW098105936A TWI394297B (zh) 2008-02-29 2009-02-25 半導體發光二極體及其製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008011847.8 2008-02-29
DE102008011847 2008-02-29
DE102008027045A DE102008027045A1 (de) 2008-02-29 2008-06-06 Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode

Publications (1)

Publication Number Publication Date
DE102008027045A1 true DE102008027045A1 (de) 2009-09-03

Family

ID=40911446

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008027045A Withdrawn DE102008027045A1 (de) 2008-02-29 2008-06-06 Halbleiterleuchtdiode und Verfahren zur Herstellung einer Halbleiterleuchtdiode

Country Status (8)

Country Link
US (1) US8772804B2 (https=)
EP (1) EP2248191B1 (https=)
JP (1) JP2011513955A (https=)
KR (2) KR101645738B1 (https=)
CN (1) CN101960623B (https=)
DE (1) DE102008027045A1 (https=)
TW (1) TWI394297B (https=)
WO (1) WO2009106038A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016131971A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur strukturierung einer nitridschicht, strukturierte dielektrikumschicht, optoelektronisches bauelement, ätzverfahren zum ätzen von schichten und umgebungssensor
WO2016192704A1 (de) * 2015-06-04 2016-12-08 Otto-Von-Guericke-Universität Magdeburg, Ttz Patentwesen Bauelement mit einer transparenten leitfähigen nitridschicht

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102194947B (zh) * 2010-03-17 2015-11-25 Lg伊诺特有限公司 发光器件和发光器件封装
KR20180055922A (ko) 2011-05-25 2018-05-25 오스람 옵토 세미컨덕터스 게엠베하 광전 반도체 칩
TW201322489A (zh) 2011-11-29 2013-06-01 新世紀光電股份有限公司 發光二極體元件及覆晶式發光二極體封裝元件
CN108054261A (zh) * 2012-02-14 2018-05-18 晶元光电股份有限公司 具有平整表面的电流扩散层的发光元件
DE102012106998A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Reflektierendes Kontaktschichtsystem für ein optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR102519668B1 (ko) 2016-06-21 2023-04-07 삼성전자주식회사 반도체 발광 소자 및 그 제조 방법
KR102476139B1 (ko) 2016-08-03 2022-12-09 삼성전자주식회사 반도체 발광소자
KR102543183B1 (ko) 2018-01-26 2023-06-14 삼성전자주식회사 반도체 발광소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030166308A1 (en) * 1999-04-15 2003-09-04 Sumitomo Electric Industries, Ltd. Method of manufacturing transparent conductor film and compound semiconductor light -emitting device with the film
US20050236630A1 (en) * 2004-04-23 2005-10-27 Wang-Nang Wang Transparent contact for light emitting diode
DE102005035722A1 (de) * 2005-07-29 2007-02-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102007002416A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers

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JP2001009583A (ja) * 1999-06-29 2001-01-16 Canon Inc レーザ加工装置
DE10023459A1 (de) * 2000-05-12 2001-11-15 Balzers Process Systems Gmbh Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben
US6784462B2 (en) * 2001-12-13 2004-08-31 Rensselaer Polytechnic Institute Light-emitting diode with planar omni-directional reflector
KR100909733B1 (ko) * 2002-01-28 2009-07-29 니치아 카가쿠 고교 가부시키가이샤 지지기판을 갖는 질화물 반도체소자 및 그 제조방법
US7041529B2 (en) * 2002-10-23 2006-05-09 Shin-Etsu Handotai Co., Ltd. Light-emitting device and method of fabricating the same
JP4174581B2 (ja) * 2002-10-23 2008-11-05 信越半導体株式会社 発光素子の製造方法
KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
DE102005013894B4 (de) * 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
DE102004050891B4 (de) 2004-10-19 2019-01-10 Lumileds Holding B.V. Lichtmittierende III-Nitrid-Halbleitervorrichtung
KR101139891B1 (ko) * 2005-01-31 2012-04-27 렌슬러 폴리테크닉 인스티튜트 확산 반사면을 구비한 발광 다이오드 소자
KR100609117B1 (ko) * 2005-05-03 2006-08-08 삼성전기주식회사 질화물계 반도체 발광소자 및 그 제조방법
US7384808B2 (en) 2005-07-12 2008-06-10 Visual Photonics Epitaxy Co., Ltd. Fabrication method of high-brightness light emitting diode having reflective layer
EP1750310A3 (en) * 2005-08-03 2009-07-15 Samsung Electro-Mechanics Co., Ltd. Omni-directional reflector and light emitting diode adopting the same
DE102006023685A1 (de) * 2005-09-29 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102005061346A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
JP2007273975A (ja) * 2006-03-10 2007-10-18 Matsushita Electric Works Ltd 発光素子
DE102007029370A1 (de) * 2007-05-04 2008-11-06 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
DE102007035687A1 (de) 2007-07-30 2009-02-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einem Schichtenstapel
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030166308A1 (en) * 1999-04-15 2003-09-04 Sumitomo Electric Industries, Ltd. Method of manufacturing transparent conductor film and compound semiconductor light -emitting device with the film
US20050236630A1 (en) * 2004-04-23 2005-10-27 Wang-Nang Wang Transparent contact for light emitting diode
DE102005035722A1 (de) * 2005-07-29 2007-02-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102007002416A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016131971A1 (de) * 2015-02-20 2016-08-25 Osram Opto Semiconductors Gmbh Verfahren zur strukturierung einer nitridschicht, strukturierte dielektrikumschicht, optoelektronisches bauelement, ätzverfahren zum ätzen von schichten und umgebungssensor
US10566210B2 (en) 2015-02-20 2020-02-18 Osram Opto Semiconductors Gmbh Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor
US10872783B2 (en) 2015-02-20 2020-12-22 Osram Oled Gmbh Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor
WO2016192704A1 (de) * 2015-06-04 2016-12-08 Otto-Von-Guericke-Universität Magdeburg, Ttz Patentwesen Bauelement mit einer transparenten leitfähigen nitridschicht

Also Published As

Publication number Publication date
EP2248191B1 (de) 2018-08-15
TW200945635A (en) 2009-11-01
WO2009106038A1 (de) 2009-09-03
CN101960623B (zh) 2014-08-06
KR101645738B1 (ko) 2016-08-04
JP2011513955A (ja) 2011-04-28
US8772804B2 (en) 2014-07-08
US20110198640A1 (en) 2011-08-18
EP2248191A1 (de) 2010-11-10
TWI394297B (zh) 2013-04-21
CN101960623A (zh) 2011-01-26
KR20160075765A (ko) 2016-06-29
KR101935642B1 (ko) 2019-01-04
KR20100126332A (ko) 2010-12-01

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Effective date: 20150319

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee