DE102007061704A1 - Verfahren zur Herstellung eines ein- oder polykristallinen Materials - Google Patents
Verfahren zur Herstellung eines ein- oder polykristallinen Materials Download PDFInfo
- Publication number
- DE102007061704A1 DE102007061704A1 DE200710061704 DE102007061704A DE102007061704A1 DE 102007061704 A1 DE102007061704 A1 DE 102007061704A1 DE 200710061704 DE200710061704 DE 200710061704 DE 102007061704 A DE102007061704 A DE 102007061704A DE 102007061704 A1 DE102007061704 A1 DE 102007061704A1
- Authority
- DE
- Germany
- Prior art keywords
- crucible
- raw material
- melted
- silicon
- additional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200710061704 DE102007061704A1 (de) | 2007-12-19 | 2007-12-19 | Verfahren zur Herstellung eines ein- oder polykristallinen Materials |
TW097148600A TW200938664A (en) | 2007-12-19 | 2008-12-12 | Method for producing a monocrystalline or polycrystalline semiconductor material |
EP08171560.9A EP2072645B2 (en) | 2007-12-19 | 2008-12-12 | Method for producing a monocrystalline or polycrystalline semiconductor material |
AT08171560T ATE544884T1 (de) | 2007-12-19 | 2008-12-12 | Verfahren zur herstellung eines monokristallinen oder polykristallinen halbleitermaterials |
US12/334,646 US8101019B2 (en) | 2007-12-19 | 2008-12-15 | Method for producing a monocrystalline or polycrystalline semiconductor material |
CNA200810184099XA CN101463497A (zh) | 2007-12-19 | 2008-12-17 | 制造单晶或多晶半导体材料的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200710061704 DE102007061704A1 (de) | 2007-12-19 | 2007-12-19 | Verfahren zur Herstellung eines ein- oder polykristallinen Materials |
Publications (1)
Publication Number | Publication Date |
---|---|
DE102007061704A1 true DE102007061704A1 (de) | 2009-09-10 |
Family
ID=40804279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE200710061704 Withdrawn DE102007061704A1 (de) | 2007-12-19 | 2007-12-19 | Verfahren zur Herstellung eines ein- oder polykristallinen Materials |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN101463497A (zh) |
DE (1) | DE102007061704A1 (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101942692A (zh) * | 2010-09-25 | 2011-01-12 | 孙国志 | 高温微波硅材料熔炼炉 |
CN103649380A (zh) | 2011-03-15 | 2014-03-19 | Gtat公司 | 用于晶体生长装置的自动检视系统 |
CN102230217A (zh) * | 2011-07-26 | 2011-11-02 | 湖南阳东磁性材料有限公司 | 一种多晶硅铸锭炉 |
CN106637397A (zh) * | 2016-12-30 | 2017-05-10 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅锭及其制备方法和一种多晶硅铸锭炉 |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62260791A (ja) | 1986-05-08 | 1987-11-13 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置 |
JPH01148780A (ja) | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | 粉粒体供給装置 |
EP0315156B1 (en) | 1987-11-02 | 1991-10-16 | Mitsubishi Materials Corporation | Apparatus for growing crystals |
JPH11236290A (ja) | 1998-02-25 | 1999-08-31 | Shin Etsu Handotai Co Ltd | 単結晶引上げ装置の原料追加システム |
DE19855061A1 (de) * | 1998-11-28 | 2000-05-31 | Ald Vacuum Techn Ag | Schmelzofen zum Schmelzen von Silizium |
EP1338682A2 (en) | 2002-02-20 | 2003-08-27 | Hemlock Semiconductor Corporation | Flowable chips and methods and apparatus for their preparation and use of same |
US6743293B2 (en) | 2000-12-01 | 2004-06-01 | Shusaku Kabushiki Kaiksha | Cruicible and growth method for polycrystal silicon using same |
US20040226504A1 (en) | 2003-05-16 | 2004-11-18 | Katsunori Nakashima | Apparatus and method for supplying crystalline materials in Czochralski method |
US6896732B2 (en) * | 2003-04-24 | 2005-05-24 | Bryan Fickett | Source material feeder apparatus for industrial crystal growth systems |
EP1337697B1 (en) | 2000-11-09 | 2005-12-14 | MEMC Electronic Materials, Inc. | Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge |
US20060060133A1 (en) | 2004-09-21 | 2006-03-23 | Katsunori Nakashima | Apparatus and method for supplying raw material in Czochralski method |
EP1820885A2 (en) * | 2001-11-15 | 2007-08-22 | MEMC Electronic Materials, Inc. | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
-
2007
- 2007-12-19 DE DE200710061704 patent/DE102007061704A1/de not_active Withdrawn
-
2008
- 2008-12-17 CN CNA200810184099XA patent/CN101463497A/zh active Pending
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62260791A (ja) | 1986-05-08 | 1987-11-13 | Toshiba Ceramics Co Ltd | シリコン単結晶引上装置 |
EP0315156B1 (en) | 1987-11-02 | 1991-10-16 | Mitsubishi Materials Corporation | Apparatus for growing crystals |
JPH01148780A (ja) | 1987-12-03 | 1989-06-12 | Toshiba Ceramics Co Ltd | 粉粒体供給装置 |
JPH11236290A (ja) | 1998-02-25 | 1999-08-31 | Shin Etsu Handotai Co Ltd | 単結晶引上げ装置の原料追加システム |
DE19855061A1 (de) * | 1998-11-28 | 2000-05-31 | Ald Vacuum Techn Ag | Schmelzofen zum Schmelzen von Silizium |
EP1337697B1 (en) | 2000-11-09 | 2005-12-14 | MEMC Electronic Materials, Inc. | Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge |
US6743293B2 (en) | 2000-12-01 | 2004-06-01 | Shusaku Kabushiki Kaiksha | Cruicible and growth method for polycrystal silicon using same |
EP1820885A2 (en) * | 2001-11-15 | 2007-08-22 | MEMC Electronic Materials, Inc. | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
EP1338682A2 (en) | 2002-02-20 | 2003-08-27 | Hemlock Semiconductor Corporation | Flowable chips and methods and apparatus for their preparation and use of same |
US6896732B2 (en) * | 2003-04-24 | 2005-05-24 | Bryan Fickett | Source material feeder apparatus for industrial crystal growth systems |
US20040226504A1 (en) | 2003-05-16 | 2004-11-18 | Katsunori Nakashima | Apparatus and method for supplying crystalline materials in Czochralski method |
US20060060133A1 (en) | 2004-09-21 | 2006-03-23 | Katsunori Nakashima | Apparatus and method for supplying raw material in Czochralski method |
Also Published As
Publication number | Publication date |
---|---|
CN101463497A (zh) | 2009-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
R120 | Application withdrawn or ip right abandoned |
Effective date: 20120207 |