DE102007061704A1 - Verfahren zur Herstellung eines ein- oder polykristallinen Materials - Google Patents

Verfahren zur Herstellung eines ein- oder polykristallinen Materials Download PDF

Info

Publication number
DE102007061704A1
DE102007061704A1 DE200710061704 DE102007061704A DE102007061704A1 DE 102007061704 A1 DE102007061704 A1 DE 102007061704A1 DE 200710061704 DE200710061704 DE 200710061704 DE 102007061704 A DE102007061704 A DE 102007061704A DE 102007061704 A1 DE102007061704 A1 DE 102007061704A1
Authority
DE
Germany
Prior art keywords
crucible
raw material
melted
silicon
additional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE200710061704
Other languages
German (de)
English (en)
Inventor
Uwe Dr. Sahr
Matthias Dr. Müller
Ingo Dr. Schwirtlich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Original Assignee
Schott AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Schott AG filed Critical Schott AG
Priority to DE200710061704 priority Critical patent/DE102007061704A1/de
Priority to TW097148600A priority patent/TW200938664A/zh
Priority to EP08171560.9A priority patent/EP2072645B2/en
Priority to AT08171560T priority patent/ATE544884T1/de
Priority to US12/334,646 priority patent/US8101019B2/en
Priority to CNA200810184099XA priority patent/CN101463497A/zh
Publication of DE102007061704A1 publication Critical patent/DE102007061704A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
DE200710061704 2007-12-19 2007-12-19 Verfahren zur Herstellung eines ein- oder polykristallinen Materials Withdrawn DE102007061704A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE200710061704 DE102007061704A1 (de) 2007-12-19 2007-12-19 Verfahren zur Herstellung eines ein- oder polykristallinen Materials
TW097148600A TW200938664A (en) 2007-12-19 2008-12-12 Method for producing a monocrystalline or polycrystalline semiconductor material
EP08171560.9A EP2072645B2 (en) 2007-12-19 2008-12-12 Method for producing a monocrystalline or polycrystalline semiconductor material
AT08171560T ATE544884T1 (de) 2007-12-19 2008-12-12 Verfahren zur herstellung eines monokristallinen oder polykristallinen halbleitermaterials
US12/334,646 US8101019B2 (en) 2007-12-19 2008-12-15 Method for producing a monocrystalline or polycrystalline semiconductor material
CNA200810184099XA CN101463497A (zh) 2007-12-19 2008-12-17 制造单晶或多晶半导体材料的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE200710061704 DE102007061704A1 (de) 2007-12-19 2007-12-19 Verfahren zur Herstellung eines ein- oder polykristallinen Materials

Publications (1)

Publication Number Publication Date
DE102007061704A1 true DE102007061704A1 (de) 2009-09-10

Family

ID=40804279

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200710061704 Withdrawn DE102007061704A1 (de) 2007-12-19 2007-12-19 Verfahren zur Herstellung eines ein- oder polykristallinen Materials

Country Status (2)

Country Link
CN (1) CN101463497A (zh)
DE (1) DE102007061704A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101942692A (zh) * 2010-09-25 2011-01-12 孙国志 高温微波硅材料熔炼炉
CN103649380A (zh) 2011-03-15 2014-03-19 Gtat公司 用于晶体生长装置的自动检视系统
CN102230217A (zh) * 2011-07-26 2011-11-02 湖南阳东磁性材料有限公司 一种多晶硅铸锭炉
CN106637397A (zh) * 2016-12-30 2017-05-10 江西赛维Ldk太阳能高科技有限公司 一种多晶硅锭及其制备方法和一种多晶硅铸锭炉

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62260791A (ja) 1986-05-08 1987-11-13 Toshiba Ceramics Co Ltd シリコン単結晶引上装置
JPH01148780A (ja) 1987-12-03 1989-06-12 Toshiba Ceramics Co Ltd 粉粒体供給装置
EP0315156B1 (en) 1987-11-02 1991-10-16 Mitsubishi Materials Corporation Apparatus for growing crystals
JPH11236290A (ja) 1998-02-25 1999-08-31 Shin Etsu Handotai Co Ltd 単結晶引上げ装置の原料追加システム
DE19855061A1 (de) * 1998-11-28 2000-05-31 Ald Vacuum Techn Ag Schmelzofen zum Schmelzen von Silizium
EP1338682A2 (en) 2002-02-20 2003-08-27 Hemlock Semiconductor Corporation Flowable chips and methods and apparatus for their preparation and use of same
US6743293B2 (en) 2000-12-01 2004-06-01 Shusaku Kabushiki Kaiksha Cruicible and growth method for polycrystal silicon using same
US20040226504A1 (en) 2003-05-16 2004-11-18 Katsunori Nakashima Apparatus and method for supplying crystalline materials in Czochralski method
US6896732B2 (en) * 2003-04-24 2005-05-24 Bryan Fickett Source material feeder apparatus for industrial crystal growth systems
EP1337697B1 (en) 2000-11-09 2005-12-14 MEMC Electronic Materials, Inc. Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge
US20060060133A1 (en) 2004-09-21 2006-03-23 Katsunori Nakashima Apparatus and method for supplying raw material in Czochralski method
EP1820885A2 (en) * 2001-11-15 2007-08-22 MEMC Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62260791A (ja) 1986-05-08 1987-11-13 Toshiba Ceramics Co Ltd シリコン単結晶引上装置
EP0315156B1 (en) 1987-11-02 1991-10-16 Mitsubishi Materials Corporation Apparatus for growing crystals
JPH01148780A (ja) 1987-12-03 1989-06-12 Toshiba Ceramics Co Ltd 粉粒体供給装置
JPH11236290A (ja) 1998-02-25 1999-08-31 Shin Etsu Handotai Co Ltd 単結晶引上げ装置の原料追加システム
DE19855061A1 (de) * 1998-11-28 2000-05-31 Ald Vacuum Techn Ag Schmelzofen zum Schmelzen von Silizium
EP1337697B1 (en) 2000-11-09 2005-12-14 MEMC Electronic Materials, Inc. Method and apparatus for preparing molten silicon melt from polycrystalline silicon charge
US6743293B2 (en) 2000-12-01 2004-06-01 Shusaku Kabushiki Kaiksha Cruicible and growth method for polycrystal silicon using same
EP1820885A2 (en) * 2001-11-15 2007-08-22 MEMC Electronic Materials, Inc. Intermittent feeding technique for increasing the melting rate of polycrystalline silicon
EP1338682A2 (en) 2002-02-20 2003-08-27 Hemlock Semiconductor Corporation Flowable chips and methods and apparatus for their preparation and use of same
US6896732B2 (en) * 2003-04-24 2005-05-24 Bryan Fickett Source material feeder apparatus for industrial crystal growth systems
US20040226504A1 (en) 2003-05-16 2004-11-18 Katsunori Nakashima Apparatus and method for supplying crystalline materials in Czochralski method
US20060060133A1 (en) 2004-09-21 2006-03-23 Katsunori Nakashima Apparatus and method for supplying raw material in Czochralski method

Also Published As

Publication number Publication date
CN101463497A (zh) 2009-06-24

Similar Documents

Publication Publication Date Title
DE102006017622B4 (de) Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium
EP2028292B1 (de) Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern
DE102006017621B4 (de) Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium
DE102012012344B4 (de) Verfahren und Vorrichtung zur Herstellung von Werkstücken durch Strahlschmelzen pulverförmigen Materials
DE69205253T2 (de) Vorrichtung für die Zuführung von granuliertem Schüttgut für einen Halbleitendeinkristallziehungsapparat.
DE68913237T2 (de) Siliciumgiessvorrichtung.
DE2752308A1 (de) Vorrichtung zum zuechten von einkristallen aus einer schmelze bei zufuehrung von zerkleinertem chargenmaterial
DE3036177A1 (de) Vorrichtung zum herstellen von festen kristallen aus geschmolzenem material
DE3323896C2 (zh)
DE4106589A1 (de) Kontinuierliches nachchargierverfahren mit fluessigem silicium beim tiegelziehen nach czochralski
DE4218123C2 (de) Vorrichtung für die kontinuierliche Zuführung von Chargengut für einen Schmelztiegel und deren Verwendung
EP0462494A1 (de) Verfahren und Vorrichtung zum Giessen von Siliciumblöcken mit Kolumnarstruktur als Grundmaterial für Solarzellen
EP2242874B1 (de) Vorrichtung und verfahren zur herstellung von kristallinen körpern durch gerichtete erstarrung
DE102007061704A1 (de) Verfahren zur Herstellung eines ein- oder polykristallinen Materials
TW200938664A (en) Method for producing a monocrystalline or polycrystalline semiconductor material
DE112016004193B4 (de) Verfahren zum Herstellen eines Einkristalls
DE19538020A1 (de) Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium
DE2252548C3 (de) Verfahren und Vorrichtung zum Herstellen von Legierungen mit einer durch orientiertes Erstarren erzeugten Struktur
DE112015003609T5 (de) Silizium-Einkristall-Zuchtvorrichtung und Silizium-Einkristall-Zuchtverfahren, das diese verwendet
DE102005025436A1 (de) Verfahren zum Verfeinern von Siliciumresten unter Verwendung eines Elektronenstrahls
EP2650095B1 (de) Heißleimschmelzvorrichtung
EP2886519B1 (de) Vertikal-tiegelziehverfahren zur herstellung eines glaskörpers mit hohem kieselsäuregehalt
EP1509642A1 (de) Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation
EP2952612B1 (de) Vorrichtung und verfahren zur herstellung eines kristalls aus halbleitermaterial
DE112022003764T5 (de) Verfahren zur Herstellung von Silizium-Einkristallen, und Einkristall-Ziehvorrichtung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R120 Application withdrawn or ip right abandoned

Effective date: 20120207