DE102007060204B4 - Strahlung emittierender Halbleiterchip - Google Patents

Strahlung emittierender Halbleiterchip Download PDF

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Publication number
DE102007060204B4
DE102007060204B4 DE102007060204.0A DE102007060204A DE102007060204B4 DE 102007060204 B4 DE102007060204 B4 DE 102007060204B4 DE 102007060204 A DE102007060204 A DE 102007060204A DE 102007060204 B4 DE102007060204 B4 DE 102007060204B4
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DE
Germany
Prior art keywords
semiconductor chip
structural elements
layer
radiation
structured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102007060204.0A
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German (de)
English (en)
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DE102007060204A1 (de
Inventor
Alfred Lell
Dr. Eichler Christoph
Christian Rumbolz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE102007060204.0A priority Critical patent/DE102007060204B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to EP08834637.4A priority patent/EP2193556B1/de
Priority to EP17157898.2A priority patent/EP3206239B1/de
Priority to JP2010526146A priority patent/JP2010541215A/ja
Priority to KR1020107009391A priority patent/KR101567613B1/ko
Priority to CN2008801093260A priority patent/CN101809772B/zh
Priority to PCT/DE2008/001423 priority patent/WO2009039811A2/de
Priority to KR1020157022923A priority patent/KR101718271B1/ko
Priority to US12/679,832 priority patent/US8340146B2/en
Priority to PL08834637T priority patent/PL2193556T3/pl
Priority to TW097133529A priority patent/TWI385827B/zh
Publication of DE102007060204A1 publication Critical patent/DE102007060204A1/de
Priority to JP2013269316A priority patent/JP2014057113A/ja
Application granted granted Critical
Publication of DE102007060204B4 publication Critical patent/DE102007060204B4/de
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE102007060204.0A 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip Active DE102007060204B4 (de)

Priority Applications (12)

Application Number Priority Date Filing Date Title
DE102007060204.0A DE102007060204B4 (de) 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip
US12/679,832 US8340146B2 (en) 2007-09-28 2008-08-27 Radiation-emitting semiconductor chip
JP2010526146A JP2010541215A (ja) 2007-09-28 2008-08-27 放射放出半導体チップ
KR1020107009391A KR101567613B1 (ko) 2007-09-28 2008-08-27 복사 방출 반도체칩
CN2008801093260A CN101809772B (zh) 2007-09-28 2008-08-27 发射辐射的半导体芯片
PCT/DE2008/001423 WO2009039811A2 (de) 2007-09-28 2008-08-27 Strahlung emittierender halbleiterchip
EP08834637.4A EP2193556B1 (de) 2007-09-28 2008-08-27 Strahlung emittierender halbleiterchip
EP17157898.2A EP3206239B1 (de) 2007-09-28 2008-08-27 Strahlung emittierender halbleiterchip
PL08834637T PL2193556T3 (pl) 2007-09-28 2008-08-27 Emitujący promieniowanie chip półprzewodnikowy
KR1020157022923A KR101718271B1 (ko) 2007-09-28 2008-08-27 복사 방출 반도체칩
TW097133529A TWI385827B (zh) 2007-09-28 2008-09-02 發出輻射的半導體晶片
JP2013269316A JP2014057113A (ja) 2007-09-28 2013-12-26 放射放出半導体チップ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007046497.7 2007-09-28
DE102007046497 2007-09-28
DE102007060204.0A DE102007060204B4 (de) 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip

Publications (2)

Publication Number Publication Date
DE102007060204A1 DE102007060204A1 (de) 2009-04-16
DE102007060204B4 true DE102007060204B4 (de) 2019-02-28

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ID=40435571

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102007060204.0A Active DE102007060204B4 (de) 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip
DE102007063957.2A Active DE102007063957B3 (de) 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE102007063957.2A Active DE102007063957B3 (de) 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip

Country Status (9)

Country Link
US (1) US8340146B2 (https=)
EP (2) EP2193556B1 (https=)
JP (2) JP2010541215A (https=)
KR (2) KR101718271B1 (https=)
CN (1) CN101809772B (https=)
DE (2) DE102007060204B4 (https=)
PL (1) PL2193556T3 (https=)
TW (1) TWI385827B (https=)
WO (1) WO2009039811A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011100175B4 (de) 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102012103549B4 (de) 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
DE102013216527A1 (de) * 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
KR20160034534A (ko) 2014-09-19 2016-03-30 삼성전자주식회사 반도체 발광 소자
KR101689468B1 (ko) * 2015-05-19 2016-12-26 주식회사 솔탑 라이다식 운고계 장치 및 라이다식 운고계 장치 구현 방법
DE102016106495A1 (de) 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
JP7222217B2 (ja) 2018-10-30 2023-02-15 Tdk株式会社 積層コイル部品
CN115775859B (zh) * 2022-11-09 2026-02-17 京东方华灿光电(浙江)有限公司 改善光串扰的发光二极管及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020079497A1 (en) * 2000-09-18 2002-06-27 Anand Gopinath Vertical cavity surface emitting laser with single mode confinement
EP1012933B1 (en) 1997-01-27 2004-09-22 International Business Machines Corporation Laser device
US20060078024A1 (en) 2004-03-05 2006-04-13 Hiroaki Matsumura Semiconductor laser device
US20060193353A1 (en) 2005-02-28 2006-08-31 Samsung Electro-Mechanics Co., Ltd. High power single mode semiconductor laser device and fabrication method thereof
US20060204865A1 (en) 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

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JPS61108176A (ja) 1984-11-01 1986-05-26 Fuji Electric Co Ltd 粗面化方法
JP2755357B2 (ja) * 1991-08-30 1998-05-20 シャープ株式会社 半導体レーザ素子
JP3448441B2 (ja) * 1996-11-29 2003-09-22 三洋電機株式会社 発光装置
JP5019664B2 (ja) * 1998-07-28 2012-09-05 アイメック 高効率で光を発するデバイスおよびそのようなデバイスの製造方法
JP3633447B2 (ja) * 1999-09-29 2005-03-30 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP4117778B2 (ja) * 2002-09-27 2008-07-16 日本電信電話株式会社 半導体光素子
EP1492209B1 (en) * 2003-06-27 2008-01-09 Nichia Corporation Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
TWI330413B (en) * 2005-01-25 2010-09-11 Epistar Corp A light-emitting device
JP4852972B2 (ja) * 2005-10-26 2012-01-11 パナソニック電工株式会社 光学部品の製造方法及び発光素子
JP2007134445A (ja) * 2005-11-09 2007-05-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP4959203B2 (ja) * 2006-02-17 2012-06-20 昭和電工株式会社 発光素子及びその製造方法、並びにランプ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1012933B1 (en) 1997-01-27 2004-09-22 International Business Machines Corporation Laser device
US20020079497A1 (en) * 2000-09-18 2002-06-27 Anand Gopinath Vertical cavity surface emitting laser with single mode confinement
US20060078024A1 (en) 2004-03-05 2006-04-13 Hiroaki Matsumura Semiconductor laser device
US20060193353A1 (en) 2005-02-28 2006-08-31 Samsung Electro-Mechanics Co., Ltd. High power single mode semiconductor laser device and fabrication method thereof
US20060204865A1 (en) 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
TW200917534A (en) 2009-04-16
KR20150104637A (ko) 2015-09-15
EP2193556B1 (de) 2017-07-26
US8340146B2 (en) 2012-12-25
EP3206239B1 (de) 2021-06-30
DE102007060204A1 (de) 2009-04-16
DE102007063957B3 (de) 2022-10-27
WO2009039811A2 (de) 2009-04-02
WO2009039811A3 (de) 2009-09-03
JP2014057113A (ja) 2014-03-27
JP2010541215A (ja) 2010-12-24
CN101809772A (zh) 2010-08-18
CN101809772B (zh) 2012-09-05
TWI385827B (zh) 2013-02-11
KR101718271B1 (ko) 2017-03-20
KR101567613B1 (ko) 2015-11-09
EP3206239A1 (de) 2017-08-16
PL2193556T3 (pl) 2017-12-29
EP2193556A2 (de) 2010-06-09
KR20100089833A (ko) 2010-08-12
US20100278203A1 (en) 2010-11-04

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