DE102007008524A1 - Strahlung emittierender Chip mit mindestens einem Halbleiterkörper - Google Patents

Strahlung emittierender Chip mit mindestens einem Halbleiterkörper Download PDF

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Publication number
DE102007008524A1
DE102007008524A1 DE102007008524A DE102007008524A DE102007008524A1 DE 102007008524 A1 DE102007008524 A1 DE 102007008524A1 DE 102007008524 A DE102007008524 A DE 102007008524A DE 102007008524 A DE102007008524 A DE 102007008524A DE 102007008524 A1 DE102007008524 A1 DE 102007008524A1
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DE
Germany
Prior art keywords
chip
contact
layer
semiconductor body
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
DE102007008524A
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German (de)
English (en)
Inventor
Ralph Dr. Wirth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE102007008524A priority Critical patent/DE102007008524A1/de
Priority to TW097103037A priority patent/TWI514612B/zh
Priority to KR1020097019554A priority patent/KR101475963B1/ko
Priority to CN200880005826XA priority patent/CN101617414B/zh
Priority to EP08706837.5A priority patent/EP2122697B1/de
Priority to PCT/DE2008/000172 priority patent/WO2008101456A1/de
Priority to JP2009550200A priority patent/JP5210327B2/ja
Priority to US12/527,148 priority patent/US8067783B2/en
Publication of DE102007008524A1 publication Critical patent/DE102007008524A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/832—Electrodes
    • H10H29/8322—Electrodes characterised by their materials
    • H10H29/8323—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/857—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Electrodes Of Semiconductors (AREA)
DE102007008524A 2007-02-21 2007-02-21 Strahlung emittierender Chip mit mindestens einem Halbleiterkörper Withdrawn DE102007008524A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE102007008524A DE102007008524A1 (de) 2007-02-21 2007-02-21 Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
TW097103037A TWI514612B (zh) 2007-02-21 2008-01-28 具有至少一個半導體晶粒之輻射發出晶片
KR1020097019554A KR101475963B1 (ko) 2007-02-21 2008-01-31 방출된 복사에 대해 투과성인 전기 전도 접촉층을 포함하는 복사 방출 반도체 몸체
CN200880005826XA CN101617414B (zh) 2007-02-21 2008-01-31 具有对所发射的辐射能透射的导电接触层的发射辐射的半导体本体
EP08706837.5A EP2122697B1 (de) 2007-02-21 2008-01-31 Strahlung emittierender halbleiterkörper mit einer für die emittierte strahlung durchlässigen, elektrisch leitenden kontaktschicht
PCT/DE2008/000172 WO2008101456A1 (de) 2007-02-21 2008-01-31 Strahlung emittierender halbleiterkörper mit einer für die emittierte strahlung durchlässigen, elektrisch leitenden kontaktschicht
JP2009550200A JP5210327B2 (ja) 2007-02-21 2008-01-31 少なくとも１つの半導体基体を備えた発光チップ
US12/527,148 US8067783B2 (en) 2007-02-21 2008-01-31 Radiation-emitting chip comprising at least one semiconductor body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007008524A DE102007008524A1 (de) 2007-02-21 2007-02-21 Strahlung emittierender Chip mit mindestens einem Halbleiterkörper

Publications (1)

Publication Number Publication Date
DE102007008524A1 true DE102007008524A1 (de) 2008-08-28

Family

ID=39471756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007008524A Withdrawn DE102007008524A1 (de) 2007-02-21 2007-02-21 Strahlung emittierender Chip mit mindestens einem Halbleiterkörper

Country Status (8)

Country Link
US (1) US8067783B2 (https=)
EP (1) EP2122697B1 (https=)
JP (1) JP5210327B2 (https=)
KR (1) KR101475963B1 (https=)
CN (1) CN101617414B (https=)
DE (1) DE102007008524A1 (https=)
TW (1) TWI514612B (https=)
WO (1) WO2008101456A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010035211A1 (en) * 2008-09-24 2010-04-01 Philips Lumileds Lighting Company, Llc Semiconductor light emitting devices grown on composite substrates
DE102012007727A1 (de) 2012-04-18 2013-10-24 Mühlbauer Ag Festkörper-Leuchtmittelanordnung sowie Vorrichtung und Verfahren zu deren Herstellung
DE102018111324A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9660153B2 (en) 2007-11-14 2017-05-23 Cree, Inc. Gap engineering for flip-chip mounted horizontal LEDs
US9640737B2 (en) 2011-01-31 2017-05-02 Cree, Inc. Horizontal light emitting diodes including phosphor particles
US9754926B2 (en) * 2011-01-31 2017-09-05 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
DE102008030815A1 (de) * 2008-06-30 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
US9831220B2 (en) 2011-01-31 2017-11-28 Cree, Inc. Light emitting diode (LED) arrays including direct die attach and related assemblies
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
JP6077201B2 (ja) * 2011-08-11 2017-02-08 昭和電工株式会社 発光ダイオードおよびその製造方法
JP6038443B2 (ja) * 2011-11-21 2016-12-07 スタンレー電気株式会社 半導体発光装置および半導体発光装置の製造方法
KR102036069B1 (ko) 2018-06-12 2019-10-24 경희대학교 산학협력단 공극 패턴을 포함하는 복사 냉각 구조 및 그것의 형성 방법
KR102036071B1 (ko) 2018-06-12 2019-10-24 경희대학교 산학협력단 다층 복사 냉각 구조
DE102019131502A1 (de) * 2019-08-29 2021-03-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung strahlungsemittierender halbleiterchips, strahlungsemittierender halbleiterchip und strahlungsemittierendes bauelement

Citations (10)

* Cited by examiner, † Cited by third party
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JPH09283801A (ja) 1996-04-10 1997-10-31 Nippon Sheet Glass Co Ltd 面発光サイリスタおよび自己走査型発光装置
DE10017336A1 (de) * 2000-04-07 2001-10-18 Vishay Semiconductor Gmbh verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern
DE10026254A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer auf GaN basierenden strahlungsemittierenden Epitaxieschichtenfolge
DE10213701A1 (de) * 2001-03-29 2002-10-10 Lumileds Lighting Us Hoch reflektierende ohmsche Kontakte für AlGaln-Flip-Chip-LEDs
DE10162914A1 (de) * 2001-12-20 2003-07-03 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement
WO2004073075A1 (en) * 2003-02-13 2004-08-26 Alti-Electronics Co., Ltd. Package of semiconductor device and fabrication method thereof
DE10308866A1 (de) * 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
US20040188791A1 (en) * 2003-03-31 2004-09-30 Ray-Hua Horng Light emitting diode and method for producing the same
US20040195576A1 (en) * 2003-03-14 2004-10-07 Toshihiko Watanabe Light-emitting device, light-emitting apparatus, image display apparatus, method of manufacturing light-emitting device, and method of manufacturing image display apparatus
DE102004036962A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik

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JPS63244689A (ja) * 1987-03-30 1988-10-12 Nec Corp 発光ダイオ−ド
EP1277240B1 (de) * 2000-04-26 2015-05-20 OSRAM Opto Semiconductors GmbH Verfahren zur Herstellung eines lichtmittierenden Halbleiterbauelements
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
JP3896027B2 (ja) * 2002-04-17 2007-03-22 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
EP1652238B1 (en) * 2003-08-08 2010-10-27 Kang, Sang-kyu Nitride micro light emitting diode with high brightness and method of manufacturing the same
JP2007531321A (ja) * 2004-03-29 2007-11-01 アーティキュレイテッド・テクノロジーズ、エル・エル・シー ロール・ツー・ロールで製作された光学シートおよび封入された半導体回路デバイス
US20060002442A1 (en) * 2004-06-30 2006-01-05 Kevin Haberern Light emitting devices having current blocking structures and methods of fabricating light emitting devices having current blocking structures
KR101158601B1 (ko) * 2004-07-30 2012-06-22 오스람 옵토 세미컨덕터스 게엠베하 박막기술을 사용하여 반도체 칩을 제조하는 방법 및박막기술을 사용하여 제조된 반도체 칩
JP2006237071A (ja) * 2005-02-22 2006-09-07 Toyoda Gosei Co Ltd 発光素子およびこれを用いた表示装置
JP4769610B2 (ja) * 2005-03-29 2011-09-07 富士フイルム株式会社 溶液製膜方法
US20070023765A1 (en) * 2005-07-29 2007-02-01 Thomas Alan C Acicular ITO for LED array

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JPH09283801A (ja) 1996-04-10 1997-10-31 Nippon Sheet Glass Co Ltd 面発光サイリスタおよび自己走査型発光装置
DE10017336A1 (de) * 2000-04-07 2001-10-18 Vishay Semiconductor Gmbh verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern
DE10026254A1 (de) * 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip mit einer auf GaN basierenden strahlungsemittierenden Epitaxieschichtenfolge
DE10213701A1 (de) * 2001-03-29 2002-10-10 Lumileds Lighting Us Hoch reflektierende ohmsche Kontakte für AlGaln-Flip-Chip-LEDs
DE10162914A1 (de) * 2001-12-20 2003-07-03 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement
WO2004073075A1 (en) * 2003-02-13 2004-08-26 Alti-Electronics Co., Ltd. Package of semiconductor device and fabrication method thereof
DE10308866A1 (de) * 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
US20040195576A1 (en) * 2003-03-14 2004-10-07 Toshihiko Watanabe Light-emitting device, light-emitting apparatus, image display apparatus, method of manufacturing light-emitting device, and method of manufacturing image display apparatus
US20040188791A1 (en) * 2003-03-31 2004-09-30 Ray-Hua Horng Light emitting diode and method for producing the same
DE102004036962A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010035211A1 (en) * 2008-09-24 2010-04-01 Philips Lumileds Lighting Company, Llc Semiconductor light emitting devices grown on composite substrates
CN102165609A (zh) * 2008-09-24 2011-08-24 飞利浦拉米尔德斯照明设备有限责任公司 复合衬底上生长的半导体发光器件
CN102165609B (zh) * 2008-09-24 2013-12-04 飞利浦拉米尔德斯照明设备有限责任公司 复合衬底上生长的半导体发光器件
DE102012007727A1 (de) 2012-04-18 2013-10-24 Mühlbauer Ag Festkörper-Leuchtmittelanordnung sowie Vorrichtung und Verfahren zu deren Herstellung
DE102018111324A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US11374152B2 (en) 2018-05-11 2022-06-28 Osram Oled Gmbh Optoelectronic semiconductor chip

Also Published As

Publication number Publication date
CN101617414A (zh) 2009-12-30
US20100038673A1 (en) 2010-02-18
EP2122697B1 (de) 2018-07-04
CN101617414B (zh) 2012-07-04
EP2122697A1 (de) 2009-11-25
US8067783B2 (en) 2011-11-29
KR101475963B1 (ko) 2014-12-23
JP5210327B2 (ja) 2013-06-12
JP2010519744A (ja) 2010-06-03
KR20090113338A (ko) 2009-10-29
TWI514612B (zh) 2015-12-21
TW200845428A (en) 2008-11-16
WO2008101456A1 (de) 2008-08-28

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Effective date: 20140222