DE102006022444A1 - Mikrostrukturierter elektronischer Baustein - Google Patents

Mikrostrukturierter elektronischer Baustein Download PDF

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Publication number
DE102006022444A1
DE102006022444A1 DE102006022444A DE102006022444A DE102006022444A1 DE 102006022444 A1 DE102006022444 A1 DE 102006022444A1 DE 102006022444 A DE102006022444 A DE 102006022444A DE 102006022444 A DE102006022444 A DE 102006022444A DE 102006022444 A1 DE102006022444 A1 DE 102006022444A1
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Prior art keywords
layer
palladium
nickel
microstructured
contacting
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DE102006022444A
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Inventor
Karin Beart
Frank Giskes
Bernhard Schuch
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Conti Temic Microelectronic GmbH
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Conti Temic Microelectronic GmbH
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Priority to DE102006022444A priority Critical patent/DE102006022444A1/de
Publication of DE102006022444A1 publication Critical patent/DE102006022444A1/de
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

Ein mikrostrukturierter elektronischer Baustein hat einen Halbleiterträger (2a), auf dem eine mikrostrukturierte Schaltungsanordnung aufgebracht ist. Auf dem Halbleiterträger (2a) ist eine Mehrzahl von Kontaktabschnitten (3) zum Kontaktieren mit einem Bonddraht (7) angeordnet. Die Kontaktabschnitte (3) haben folgende Schichtstruktur: Auf dem Halbleiterträger (2a) ist eine Nickelschicht (4) aufgebracht. Auf letzterer ist eine Palladiumschicht (5) aufgebracht. Auf dieser wiederum ist eine Goldschicht (6) aufgebracht. Es resultiert ein Baustein mit erhöhter Zuverlässigkeit, insbesondere mit erhöhter Beständigkeit bei höheren Temeraturen und verbesserter thermischer Zykelfestigkeit.

Description

  • Die Erfindung betrifft einen mikrostrukturierten elektronischen Baustein nach dem Oberbegriff des Anspruches 1.
  • Derartige Bausteine sind durch offenkundige Vorbenutzung bekannt. Die Nutzung von elektronischen Baugruppen im erhöhten Temperaturbereich verstärkt die technischen Anforderungen an die einzelnen Komponenten. Baugruppen, die beim Kraftfahrzeug im Motorraum eingesetzt werden, müssen extremen Temperaturschwankungen widerstehen. Hier werden für elektronische Schaltungen mit insbesondere mehreren Bausteinen meist Keramikträgerplatten eingesetzt, die zum elektrischen Kontaktieren mit den Kontaktabschnitten des Bausteins mit Gold, Silber-/Platin- oder Silber-/Palladium-Paste bedruckt sind. Der Halbleiterträger des Bausteins wird mit einem leitfähigen Kleber auf den Keramikträger geklebt. Die Kontaktabschnitte auf dem Halbleiterträger und auf den Keramikträger werden anschließend mit Bondrähten aus Gold oder Aluminium verbunden. Bei den bekannten Bausteinen ist im Bereich der Bondkontakte eine unerwünschte Diffusion der dortigen Materialpartner nicht ausgeschlossen. Dies führt zur Lebensdauerverkürzung und zum vorzeitigen Ausfall des Bausteins und damit der Baugruppe.
  • Es ist daher eine Aufgabe der vorliegenden Erfindung, einen Baustein der eingangs genannten Art derart weiterzubilden, dass seine Zuverlässigkeit, insbesondere seine Beständigkeit bei höheren Temperaturen und seine thermische Zykelfestigkeit, erhöht ist.
  • Diese Aufgabe ist erfindungsgemäß gelöst durch einen Baustein mit den im Kennzeichnungsteil des Anspruches 1 angegebenen Merkmalen.
  • Erfindungsgemäß wurde erkannt, dass eine Schichtstruktur mit einer Nickel-, einer Palladium- und einer Goldschicht ein Schichtsystem darstellt, welches sowohl mit Gold- als auch mit Aluminium-Bonddrähten kontaktiert werden kann. Die Zuverlässigkeit der Kontaktierung ist hierdurch erhöht. Fehlstellen, z. B. Kirkendalleffekte, sind vermieden. Zudem können alle Typen von Halbleiterträgern mit einer Drahtart Gold oder Aluminium gebondet werden.
  • Schichtstärken der Einzelschichten nach den Ansprüchen 2 bis 4 haben sich als besonders vorteilhaft zur einfachen Herstellung einer zuverlässigen und beständigen Kontaktierung herausgestellt.
  • Ein Ausführungsbeispiel wird nachfolgend anhand der Zeichnung näher erläutert. In dieser zeigen:
  • 1 eine Aufsicht auf einen mikrostrukturierten Silizium-Wafer;
  • 2 eine Ausschnittsvergrößerung aus 1 im Bereich eines mikrostrukturierten elektronischen Bausteins; und
  • 3 nochmals vergrößert einen Schnitt gemäß Linie III-III in 2.
  • Ein mikrostrukturierter elektronischer Baustein 1 wird aus einem Silizium-Wafer 2 hergestellt, in den vorher, durch einen entsprechenden Lithographie-Prozess, mikrostrukturierte Schaltungsanordnungen aufgebracht wurden. Beim elektronischen Baustein 1 handelt es sich also um einen integrierten, monolithischen Schaltkreis, der aus einem einzigen Halbleiter-Kristallstück in Form eines Halbleiterträgers 2a, also eines Siliziumträgers, gefertigt ist. Der Silizium-Wafer 2 ist hierzu in quadratische Halbleiterträger 2a unterteilt.
  • Der Baustein 1 hat eine Mehrzahl von Kontaktabschnitten 3, die auch als Bondpads bezeichnet werden. Der Baustein 1 weist insgesamt 48 derartiger Kontaktabschnitte 3 auf, die längs seines Umfangs-Randbereichs aufgebracht sind. Die Kontaktabschnitte 3 dienen zur Kontaktierung des Bausteins 1 mit entsprechenden Kontaktabschnitten eines nicht dargestellten Keramikträgers für den Baustein 1. Zum Kontaktieren dienen jeweils Bonddrähte, die die Kontaktabschnitte 3 mit den zugeordneten Kontaktabschnitten des Keramikträgers verbinden. Die Kontaktabschnitte des Keramikträgers sind durch eine Bedruckung mit einer Goldpaste, einer Silber-/Platin-Paste oder einer Silber-/Palladium-Paste gebildet.
  • Die Kontaktabschnitte 3 des Bausteins 1 haben folgende Schichtstruktur: Auf den Halbleiterträger 2a ist zunächst eine Schicht 4 aus chemischem Nickel mit Hilfe einer chemischen Beschichtungstechnik aufgebracht. Die Nickelschicht 4 hat eine Dicke von 5 μm. Auch andere Dicken zwischen 3 und 7 μm sind möglich. Auf die Nickelschicht 4 ist eine Palladiumschicht 5 durch einen Metallisierungsprozess aufgebracht. Die Palladiumschicht 5 hat eine Dicke von 0,3 μm. Dicken der Palladiumschicht 5 zwischen 0,2 und 0,4 μm sind möglich.
  • Auf die Palladiumschicht 5 ist eine Goldschicht 6 mit Hilfe eines Flash-Metallisierungsprozesses aufgebracht. Die Goldschicht 6 hat eine Dicke von 80 nm. Auch andere Dicken zwischen 40 und 120 nm sind möglich.
  • Entsprechende Beschichtungstechniken sind im Zusammenhang mit der Herstellung von Niedertemperatur-Einbrand-Keramiken (Low Temperature Cofired Ceramics, LTCC) bekannt.
  • Nach dem Beschichten des Bausteins 1 mit den Schichten 4, 5 und 6 wird der Wafer 2 in die einzelnen Bausteine 1 durch Zersägen unterteilt. Beim Beschichten der Schichten 4, 5 und 6, also bei der Herstellung der Kontaktabschnitte 3, liegt der Wafer 2 also noch zusammenhängend vor.
  • Auf die Oberseite des Kontaktabschnitts 3, also von der Goldschicht 6 her, wird ein Bonddraht 7 an den Kontaktabschnitt 3 kontaktiert.

Claims (4)

  1. Mikrostrukturierter elektronischer Baustein (1) – mit einem Halbleiterträger (2a), auf dem eine mikrostrukturierte Schaltungsanordnung aufgebracht ist, – mit einer Mehrzahl von Kontaktabschnitten (3) auf dem Halbleiterträger (2a) zum Kontaktieren mit einem Bonddraht (7), dadurch gekennzeichnet, dass die Kontaktabschnitte (3) folgende Schichtstruktur aufweisen: – eine auf dem Halbleiterträger (2a) aufgebrachte Nickelschicht (4), – eine auf der Nickelschicht (4) aufgebrachte Palladiumschicht (5), – eine auf der Palladiumschicht (5) aufgebrachte Goldschicht (6).
  2. Baustein nach Anspruch 1, dadurch gekennzeichnet, dass die Nickelschicht (4) eine Dicke zwischen 3 und 7 μm hat, vorzugsweise eine Dicke von 5 μm.
  3. Baustein nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Palladiumschicht (5) eine Dicke zwischen 0,2 und 0,4 μm hat, vorzugsweise eine Dicke von 0,3 μm.
  4. Baustein nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass die Goldschicht (6) eine Dicke zwischen 40 und 120 nm hat, vorzugsweise eine Dicke von 80 nm.
DE102006022444A 2006-05-13 2006-05-13 Mikrostrukturierter elektronischer Baustein Withdrawn DE102006022444A1 (de)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1126519A2 (de) * 2000-02-18 2001-08-22 Texas Instruments Incorporated Struktur und Herstellungsmethode von Anschlussflächen auf verkupferten intergrierten Schaltungen
US20030153107A1 (en) * 2000-04-13 2003-08-14 Stierman Roger J. Method for reworking metal layers on integrated circuit bond pads
US20040084511A1 (en) * 2002-04-15 2004-05-06 Test Howard R. Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US20050104207A1 (en) * 2003-07-01 2005-05-19 Dean Timothy B. Corrosion-resistant bond pad and integrated device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1126519A2 (de) * 2000-02-18 2001-08-22 Texas Instruments Incorporated Struktur und Herstellungsmethode von Anschlussflächen auf verkupferten intergrierten Schaltungen
US20030153107A1 (en) * 2000-04-13 2003-08-14 Stierman Roger J. Method for reworking metal layers on integrated circuit bond pads
US20040084511A1 (en) * 2002-04-15 2004-05-06 Test Howard R. Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US20050104207A1 (en) * 2003-07-01 2005-05-19 Dean Timothy B. Corrosion-resistant bond pad and integrated device

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