DE102006009021A1 - Semiconductor device, has copper posts soldered onto side of insulated gate bipolar transistor, where heat generated in transistor is transferred to electrode unit and is radiated by soldering posts onto unit - Google Patents
Semiconductor device, has copper posts soldered onto side of insulated gate bipolar transistor, where heat generated in transistor is transferred to electrode unit and is radiated by soldering posts onto unit Download PDFInfo
- Publication number
- DE102006009021A1 DE102006009021A1 DE200610009021 DE102006009021A DE102006009021A1 DE 102006009021 A1 DE102006009021 A1 DE 102006009021A1 DE 200610009021 DE200610009021 DE 200610009021 DE 102006009021 A DE102006009021 A DE 102006009021A DE 102006009021 A1 DE102006009021 A1 DE 102006009021A1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- electrode part
- metal pillars
- insulating
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01002—Helium [He]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
Description
Die vorliegende Erfindung betrifft ein Halbleiterbauelement, ein Elektrodenteil, und ein Elektrodenteil-Herstellungsverfahren, und spezieller ein Halbleiterbauelement, das unter Betriebsbedingungen mit hohem Strom und hoher Spannung eingesetzt wird, ein Elektrodenteil, das bei einem derartigen Halbleiterbauelement eingesetzt wird, und ein Verfahren zur Herstellung eines derartigen Elektrodenteils.The The present invention relates to a semiconductor device, an electrode part, and an electrode part manufacturing method, and more particularly a semiconductor device operating under operating conditions used with high current and high voltage, an electrode part, which is used in such a semiconductor device, and a method for producing such an electrode part.
Seit einigen Jahren werden Leistungsmodule, die Bedingungen mit hohem Strom und hoher Spannung standhalten können, in Stromrichtern, beispielsweise Wechselrichtern/Wandlern verwendet, zum Antrieb von Motoren, die in Robotern, Werkzeugmaschinen, elektrischen Fahrzeugen und dergleichen vorhanden sind. Momentan bestehen derartige Leistungsmodule hauptsächlich aus Leistungshalbleiterelementen, beispielsweise Bipolartransistoren mit isoliertem Gate (IGBTs) und Freilaufdioden (FWDs) (vgl. beispielsweise die japanische Veröffentlichung eines ungeprüften Patents Nr. 2004-6603).since some years, will be power modules that meet high conditions Current and high voltage can withstand in converters, for example Inverters / converters used to drive motors that in robots, machine tools, electric vehicles and the like available. Currently, such power modules mainly consist of Power semiconductor elements, for example bipolar transistors with insulated gate (IGBTs) and freewheeling diodes (FWDs) (cf., for example the Japanese publication an unchecked Patent No. 2004-6603).
Andererseits
ist die Kollektorelektrode, die an der Unterseite des IGBT
Bei
dem voranstehend geschilderten, herkömmlichen Anbringungsverfahren
kann Wärme
von der Unterseite des IGBT
Um
die Probleme zu vermeiden, die bei Verwendung von Aluminiumdraht
auftreten, wurde bislang ein Versuch unternommen, wie er in
Das gleiche gilt für jenen Fall, in welchem eine FWD in einem Leistungsmodul vorgesehen ist. So ist beispielsweise eine Anodenelektrode auf der Oberseite der FWD vorgesehen, und eine Kathodenelektrode an der Unterseite der FWD.The same applies to the case in which a FWD is provided in a power module is. For example, an anode electrode is on the top the FWD provided, and a cathode electrode at the bottom the FWD.
Aluminiumdrähte sind mittels Ultraschall mit der Oberseite der FWD verbunden, oder es ist eine Kupferelektrode an die Oberseite der FWD angelötet. Die Unterseite der FWD ist auf eine Kupferfolie gelötet, die an einer Isolierplatte auf einer Kupferbasis angebracht ist.Aluminum wires are using ultrasound connected to the top of the FWD, or a copper electrode is soldered to the top of the FWD. The bottom of the FWD is soldered to a copper foil attached to an insulating plate on a copper base.
Das Wärmeausdehnungsvermögen von Silizium (Si), dem Hauptbestandteil des IGBT oder der FWD, beträgt jedoch etwa 2,6 ppm/°C. Andererseits ist das Wärmeausdehnungsvermögen von Kupfer etwa gleich 17 ppm/°C und höher als jenes von Silizium. Wenn daher eine Kupferelektrode auf die Oberseite des IGBT oder der FWD auf die voranstehend geschilderte Art und Weise gelötet wird, anstelle von Aluminiumdrähten, unter Berücksichtigung der Wärmeabstrahlung, unterliegt eine gelötete Grenzfläche Wärmebeanspruchungen zum Zeitpunkt von Wärmezyklen oder Leistungszyklen, infolge des unterschiedlichen Wärmeausdehnungsvermögens zwischen diesen Bestandteilen. Durch diese Wärmebeanspruchungen werden Verzerrungen hervorgerufen. Dies kann dazu führen, dass ein Spalt auftritt, und die angestrebte Lebensdauer des Leistungsmoduls nicht erreicht wird.The Thermal expansion capacity of However, silicon (Si), the major constituent of the IGBT or FWD, is about 2.6 ppm / ° C. On the other hand, the thermal expansibility of Copper about equal to 17 ppm / ° C and higher as that of silicon. Therefore, if a copper electrode on the Top of the IGBT or FWD on the above Soldered way is, instead of aluminum wires, considering the heat radiation, is subject to a soldered Interface thermal stresses at the time of heat cycles or performance cycles, due to the different thermal expansion capacity between these ingredients. These thermal stresses become distortions caused. This can cause a gap occurs and the desired lifetime of the power module is not achieved.
Ein Spalt kann auch unter dem IGBT oder der FWD auftreten. Das Wärmeausdehnungsvermögen der Isolierplatte, die aus Aluminiumoxid besteht, und an deren Oberfläche die Kupferfolie angebracht ist, beträgt etwa 7 ppm/°C. Diese Isolierplatte ist mit der Kupferbasis verlötet, deren Wärmeausdehnungsvermögen hoch ist. Daher unterliegt eine verlötete Grenzfläche Wärmebeanspruchungen, infolge des unterschiedlichen Wärmeausdehnungsvermögens. Durch diese Wärmebeanspruchungen werden Verzerrungen hervorgerufen, und kann ein Spalt auftreten. Es ist bekannt, dass dann, wenn hier Wärmezyklen auftreten, beispielsweise zwischen –40 und +125°C, ein Spalt infolge von Verzerrungen an der gelöteten Grenzfläche zwischen der Isolierplatte und der Kupferbasis nach etwa 500 Zyklen auftreten kann.One Gap can also occur under the IGBT or the FWD. The thermal expansion capacity of Insulating plate made of alumina and on the surface of which Copper foil is attached, amounts about 7 ppm / ° C. This insulating plate is soldered to the copper base, its thermal expansion capacity is high is. Therefore, a soldered interface undergoes thermal stresses, due to the different thermal expansion capacity. By these thermal stresses Distortions are caused and a gap can occur. It is known that when heat cycles occur here, for example between -40 and + 125 ° C, a gap due to distortions at the soldered interface between the insulating plate and the copper base can occur after about 500 cycles.
Der Grund für die Verwendung von Kupfer als Material für Wärmeabstrahlbasen in Leistungsmodulen besteht darin, dass Kupfer eine gute Wärmeleitfähigkeit (etwa 350 W/(m·K)) aufweist. Um das Auftreten derartiger Spalte zu verhindern, wurde jedoch ein Material wie etwa Kupfermolybdän (CuMo) oder Aluminiumsiliziumcarbid (AlSiC) anstelle von Kupfer eingesetzt, mit einem Wärmeausdehnungsvermögen in der Nähe von 7 ppm/°C. Das Wärmeausdehnungsvermögen dieser Materialien ist niedriger als jenes von Kupfer, jedoch ist deren Wärmeleitfähigkeit niedrig (etwa 150 W/(m·K)). Diese Eigenschaft ist bei neueren IGBTs und FWDs mit geringen Verlusten nachteilig. Darüber hinaus sind die Kosten zur Herstellung von Wärmeabstrahlbasen unter Verwendung dieser Materialien etwa 20-mal höher als die Herstellungskosten für Kupferbasen.Of the reason for the use of copper as a material for heat radiation bases in power modules is that copper has a good thermal conductivity (about 350 W / (m · K)). However, in order to prevent the occurrence of such gaps, one became Material such as copper molybdenum (CuMo) or aluminum silicon carbide (AlSiC) instead of copper used, with a thermal expansion in the near 7 ppm / ° C. The thermal expansion capacity of this Materials are lower than copper, but theirs is thermal conductivity low (about 150 W / (m · K)). This feature is common with newer IGBTs and low loss FWDs disadvantageous. About that In addition, the cost of producing heat radiation bases is using of these materials about 20 times higher as the manufacturing costs for Copper bases.
Die vorliegende Erfindung wurde unter den voranstehend geschilderten Umständen entwickelt. Ein Ziel der vorliegenden Erfindung besteht in der Bereitstellung eines Halbleiterbauelements mit hoher Verlässlichkeit, bei welchem Wärme, die im Inneren erzeugt wird, wirksam abgestrahlt wird, und Wärmebeanspruchungen auf einer inneren Grenzfläche zwischen Teilen, die verbunden sind, verringert sind.The The present invention has been described above circumstances developed. An object of the present invention is to provide a semiconductor device with high reliability, in which heat, the is generated inside, effectively radiated, and thermal stresses on an inner interface between parts that are connected are reduced.
Ein weiteres Ziel der vorliegenden Erfindung besteht in der Bereitstellung eines Elektrodenteils, welches wirksam Wärme abstrahlen kann, die in einem Halbleiterbauelement erzeugt wird, und welches Wärmebeanspruchungen auf einer inneren Grenzfläche zwischen verbundenen Teilen verringern kann, und in der Bereitstellung eines Verfahrens zur Herstellung eines derartigen Elektrodenteils.One Another object of the present invention is to provide an electrode part which can efficiently radiate heat which is in a semiconductor device is produced, and which thermal stresses on an inner interface between connected parts, and in the deployment a method for producing such an electrode part.
Um das voranstehend geschilderte, erste Ziel zu erreichen, wird ein Halbleiterbauelement zur Verfügung gestellt, das ein Halbleiterelement mit einer Elektrode auf einer Oberfläche aufweist. Dieses Halbleiterbauelement weist ein Elektrodenteil auf, das eine Isolierhalterung aufweist, mit mehreren Perforationen, die durch Hauptebenen hindurchgehen, und Metallpfeilern, die in den mehreren Perforationen angeordnet sind, und mit der Elektrode verbunden sind.Around reaching the above described first goal becomes one Semiconductor device available which is a semiconductor element with an electrode on one surface having. This semiconductor device has an electrode part which an insulating support having a plurality of perforations, the passing through main planes, and metal pillars that go into the are arranged a plurality of perforations, and are connected to the electrode.
Um das voranstehend geschilderte, zweite Ziel zu erreichen, wird ein Elektrodenteil zur Verfügung gestellt, das mit einer Elektrode eines Halbleiterbauelements verbunden ist. Dieses Elektrodenteil weist eine Isolierhalterung mit mehreren Perforationen auf, die durch Hauptebenen hindurchgehen, und Metallpfeilern, die in den mehreren Perforationen angeordnet sind.Around To achieve the above-described, second goal is a Electrode part available placed connected to an electrode of a semiconductor device is. This electrode part has a Isolierhalterung with several Perforations that pass through main planes and metal pillars, which are arranged in the plurality of perforations.
Um das voranstehend geschilderte, zweite Ziel zu erreichen, wird ein Verfahren zur Herstellung eines Elektrodenteils zur Verfügung gestellt, das mit einer Elektrode eines Halbleiterbauelements verbunden ist. Dieses Elektrodenteil-Herstellungsverfahren umfasst den Schritt, Metallpfeiler in mehreren Perforationen auszubilden, die durch Hauptebenen einer Isolierhalterung hindurchgehen, durch Tränken der Isolierhalterung mit Metall.Around To achieve the above-described, second goal is a Method for producing an electrode part provided, which is connected to an electrode of a semiconductor device. This electrode part manufacturing method comprises the step of forming metal posts in multiple perforations passing through main planes of an insulating support Soak the insulating bracket with metal.
Die Erfindung wird nachstehend anhand zeichnerisch dargestellter Ausführungsbeispiele näher erläutert, aus welchen weitere Vorteile und Merkmale hervorgehen. Es zeigt:The The invention will be described below with reference to drawings explained in more detail, from which further benefits and features emerge. It shows:
Ausführungsformen der vorliegenden Erfindung, die beispielsweise bei einem Leistungsmodul eingesetzt werden, welches einen IGBT und eine FWD aufweist, werden nunmehr im Einzelnen unter Bezugnahme auf die Zeichnungen beschrieben.embodiments of the present invention used for example in a power module which has an IGBT and a FWD will now be described in detail with reference to the drawings.
Zuerst wird eine erste Ausführungsform der vorliegenden Erfindung geschildert.First becomes a first embodiment of the present invention.
Eine
Emitterelektrode
Die
Isolierplatte
Wie
in
Durch
Verbinden des Elektrodenteils
Kupfer (Kupferpfeiler
Copper (copper pillar
Das
Elektrodenteil
Durch
Anordnen des voranstehend geschilderten Elektrodenteils
Vergleicht
man den Fall, bei welchem das Elektrodenteil
Wie
voranstehend geschildert, kann durch Löten des Elektrodenteils
Bei
dieser ersten Ausführungsform
ist eine Kupferelektrode
Eine
Gateelektrode
Wie
aus
Wenn
ein Leiterrahmenaufbau verwendet wird, beträgt Tj 150,0°C, mit der
Oberfläche
der Kupferelektrode
Die
voranstehende Beschreibung erfolgte anhand des IGBT
Bei
den voranstehenden Beispielen befindet sich das Elektrodenteil
Die
Bei
einem in
Als nächstes wird eine zweite Ausführungsform der vorliegenden Erfindung beschrieben.When next becomes a second embodiment of the present invention.
Wie
aus
Die
Elektrodenschicht
Durch
Einsatz der Elektrodenteile
Als nächstes wird eine dritte Ausführungsform der vorliegenden Erfindung beschrieben.When next becomes a third embodiment of the present invention.
Die
Wie
in
Das
Elektrodenteil
Durch
Einsatz der Elektrodenteile
Beim
vorliegenden Beispiel stehen Endabschnitte jedes Kupferpfeilers
Als nächstes wird eine vierte Ausführungsform der vorliegenden Erfindung beschrieben.When next becomes a fourth embodiment of the present invention.
Die
Wie
in
Das
Elektrodenteil
Ein
zweites Verfahren verläuft
folgendermaßen.
Löcher,
die nicht durch die Halterung
Bei
dem Elektrodenteil
Beim
vorliegenden Beispiel stehen Endabschnitte jedes Kupferpfeilers
Als nächstes wird eine fünfte Ausführungsform der vorliegenden Erfindung beschrieben.When next becomes a fifth embodiment of the present invention.
Die
Wie
in den
Das
Elektrodenteil
Normalerweise
sind thermische Beanspruchungen an einem Randabschnitt einer gelöteten Grenzfläche zwischen
Teilen stärker
als thermische Beanspruchungen im Zentrum der gelöteten Grenzfläche. Daher
werden, wie bei dem Elektrodenteil
Beim
vorliegenden Beispiel stehen Endabschnitte jedes Kupferpfeilers
Als nächstes wird eine sechste Ausführungsform der vorliegenden Erfindung beschrieben.When next becomes a sixth embodiment of the present invention.
Die
Wie
in
Das
Elektrodenteil
Bei
dem Elektrodenteil
Beim
vorliegenden Beispiel stehen Endabschnitte jedes Kupferpfeilers
Als nächstes wird eine siebte Ausführungsform der vorliegenden Erfindung beschrieben.When next becomes a seventh embodiment of the present invention.
Die
Wie
in
Das
Elektrodenteil
Das
Elektrodenteil
Bei
dem Elektrodenteil
Die
Wenn
das Elektrodenteil
In
den
Wie
voranstehend erläutert,
ist es bei den geschilderten Elektrodenteilen
Bei
den voranstehenden Beispielen wurde ein Fall beschrieben, bei welchem
Lot zum Verbinden von Teilen verwendet wird. Allerdings kann auch
eine leitfähige
Paste oder dergleichen, die bei Einwirkung von Wärme oder Licht aushärtet, anstatt
von Lot eingesetzt werden. In einem derartigen Fall kann ebenfalls
jedes der voranstehend geschilderten Elektrodenteile
Bei
den voranstehenden Beispielen wird Kupfer als ein Metallmaterial
zur Herstellung der Elektrodenteile
Bei den voranstehenden Beispielen werden Elektrodenteile einer Art in einem Leistungsmodul eingesetzt. Allerdings können selbstverständlich auch Elektrodenteile mehrerer Arten in einem Leistungsmodul eingesetzt werden.at In the preceding examples, electrode parts of a kind are described in US Pat used a power module. However, of course, too Electrode parts of several types used in a power module become.
Bei der vorliegenden Erfindung ist das Elektrodenteil, in welchem mehrere Metallpfeiler vorgesehen sind, mit einer Elektrode eines Halbleiterelements verbunden. Dies führt dazu, dass Wärme, die in dem Halbleiterelement erzeugt wird, wirksam abgestrahlt werden kann, und eine Verzerrung an jeder Grenzfläche zwischen verbundenen Teilen dadurch verringert werden kann, dass der Einfluss der Wärmeausdehnung der Materialien verringert wird. Daher kann das Auftreten eines Spaltes an jeder Grenzfläche zwischen miteinander verbundenen Teilen signifikant unterdrückt werden, und kann ein Halbleiterbauelement mit hoher Verlässlichkeit erzielt werden.at the present invention, the electrode part, in which a plurality Metal post are provided with an electrode of a semiconductor element connected. this leads to to that heat, which is generated in the semiconductor element, are efficiently radiated can, and a distortion at any interface between connected parts This can be reduced by the influence of thermal expansion the materials is reduced. Therefore, the occurrence of a Cleft at each interface be significantly suppressed between interconnected parts, and a semiconductor device with high reliability can be achieved.
Voranstehend wurden nur die Grundlagen der vorliegenden Erfindung erläutert. Da zahlreiche Modifikationen und Änderungen Fachleuten auf diesem Gebiet einfallen werden, ist es nicht erwünscht, die Erfindung auf die exakte Konstruktion und die exakten Anwendungen zu beschränken, die dargestellt und beschrieben wurden, so dass sämtliche geeigneten Abänderungen und Äquivalente, die vom Umfang der Erfindung umfasst sind, von der vorliegenden Erfindung umfasst sein sollen, wobei sich Wesen und Umfang der Erfindung aus der Gesamtheit der vorliegenden Anmeldeunterlagen ergeben.In the foregoing, only the principles of the present invention have been explained. There numerous modifications and changes Experts in this field will come up with, it is not desirable that Invention on the exact construction and the exact applications restrict, which have been shown and described, so that all appropriate amendments and equivalents, which are encompassed by the scope of the invention, from the present The invention should be understood to include the nature and scope of the invention from the entirety of the present application documents.
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005-052389 | 2005-02-28 | ||
JP2005052389A JP4613077B2 (en) | 2005-02-28 | 2005-02-28 | Semiconductor device, electrode member, and method for manufacturing electrode member |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102006009021A1 true DE102006009021A1 (en) | 2006-08-31 |
DE102006009021B4 DE102006009021B4 (en) | 2015-01-22 |
Family
ID=36794345
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE200610009021 Expired - Fee Related DE102006009021B4 (en) | 2005-02-28 | 2006-02-27 | Semiconductor component with electrode part |
Country Status (3)
Country | Link |
---|---|
US (3) | US8324726B2 (en) |
JP (1) | JP4613077B2 (en) |
DE (1) | DE102006009021B4 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008133210A1 (en) | 2007-04-19 | 2008-11-06 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device |
WO2009037037A1 (en) * | 2007-09-17 | 2009-03-26 | Robert Bosch Gmbh | Device for cooling electronic components |
WO2013004543A1 (en) * | 2011-07-04 | 2013-01-10 | Robert Bosch Gmbh | Method for producing structured sintering connection layers and semiconductor component comprising a structured sintering connection layer |
EP2577725A2 (en) * | 2010-06-02 | 2013-04-10 | RWTH Aachen | Semiconductor element and method for producing the same |
DE102012205240A1 (en) * | 2012-03-30 | 2013-10-02 | Semikron Elektronik Gmbh & Co. Kg | Method for manufacturing substrate for power semiconductor component e.g. MOSFET for power converter, involves arranging electroplating ridges in recesses formed in bottom metallization layer of insulating material portion |
EP2685492A1 (en) * | 2012-07-09 | 2014-01-15 | SEMIKRON Elektronik GmbH & Co. KG | Power semiconductor module with at least one stress-reducing adjustment element |
FR3020186A1 (en) * | 2014-08-08 | 2015-10-23 | Commissariat Energie Atomique | CONNECTOR FOR THE CONNECTION BETWEEN A COMPONENT AND A SUPPORT, COMPRISING A RECEPTACLE WITH A RELIEF |
DE102016213140A1 (en) * | 2016-07-19 | 2018-01-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Carrier which is equipped with at least one power semiconductor component |
FR3058565A1 (en) * | 2016-11-08 | 2018-05-11 | Valeo Systemes De Controle Moteur | ELECTRONIC POWER MODULE, ELECTRICAL EQUIPMENT AND ELECTRICAL POWER COMPRESSOR COMPRISING SUCH AN ELECTRONIC POWER MODULE |
EP3276661A4 (en) * | 2015-03-23 | 2018-11-21 | Hitachi, Ltd. | Semiconductor device |
DE102021130989A1 (en) | 2021-11-25 | 2023-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | ELECTRONIC DEVICE AND METHOD OF MAKING AN ELECTRONIC DEVICE |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8089150B2 (en) * | 2006-11-14 | 2012-01-03 | Rinehart Lawrence E | Structurally robust power switching assembly |
JP4648351B2 (en) * | 2007-03-30 | 2011-03-09 | 住友ベークライト株式会社 | Heat transfer sheet and heat dissipation structure |
US20080246139A1 (en) | 2007-04-03 | 2008-10-09 | Don Craven | Polar hybrid grid array package |
JP5245485B2 (en) | 2008-03-25 | 2013-07-24 | 富士電機株式会社 | Manufacturing method of semiconductor device |
JP5500936B2 (en) | 2009-10-06 | 2014-05-21 | イビデン株式会社 | Circuit board and semiconductor module |
JP5551920B2 (en) * | 2009-11-24 | 2014-07-16 | イビデン株式会社 | Semiconductor device and manufacturing method thereof |
JP5581043B2 (en) | 2009-11-24 | 2014-08-27 | イビデン株式会社 | Semiconductor device and manufacturing method thereof |
JP6065839B2 (en) * | 2011-09-30 | 2017-01-25 | 富士電機株式会社 | Semiconductor device and manufacturing method thereof |
JP5631857B2 (en) * | 2011-12-21 | 2014-11-26 | 日本碍子株式会社 | Power module substrate and method for manufacturing the substrate |
WO2013171842A1 (en) * | 2012-05-15 | 2013-11-21 | 株式会社安川電機 | Semiconductor device and manufacturing method for semiconductor device |
JP5720625B2 (en) * | 2012-06-04 | 2015-05-20 | トヨタ自動車株式会社 | Heat transfer member and module including the heat transfer member |
WO2014115561A1 (en) | 2013-01-25 | 2014-07-31 | 富士電機株式会社 | Semiconductor device |
JP5932701B2 (en) * | 2013-03-29 | 2016-06-08 | 三菱電機株式会社 | Semiconductor device |
EP2871673A1 (en) | 2013-11-06 | 2015-05-13 | Nxp B.V. | Semiconductor device |
EP2871672B1 (en) * | 2013-11-06 | 2018-09-26 | Nxp B.V. | Semiconductor device |
WO2016174899A1 (en) | 2015-04-27 | 2016-11-03 | 富士電機株式会社 | Semiconductor device |
DE112016006331B4 (en) * | 2016-01-29 | 2021-07-22 | Mitsubishi Electric Corporation | Semiconductor device |
KR101905995B1 (en) * | 2016-11-09 | 2018-10-10 | 현대자동차주식회사 | Power module of double-faced cooling |
US11367669B2 (en) | 2016-11-21 | 2022-06-21 | Rohm Co., Ltd. | Power module and fabrication method of the same, graphite plate, and power supply equipment |
JP7025181B2 (en) * | 2016-11-21 | 2022-02-24 | ローム株式会社 | Power modules and their manufacturing methods, graphite plates, and power supplies |
CN110620087A (en) * | 2018-06-20 | 2019-12-27 | 比亚迪股份有限公司 | Heat dissipation bottom plate, heat dissipation element and IGBT module |
CN110444536A (en) * | 2019-07-10 | 2019-11-12 | 南通沃特光电科技有限公司 | A kind of electric power inverter circuit device |
CN112996273B (en) * | 2021-02-19 | 2022-05-27 | 杭州得诚电力科技股份有限公司 | igbt module assembling process and electronic device |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6042742A (en) | 1983-08-17 | 1985-03-07 | Konishiroku Photo Ind Co Ltd | Shutter charge mechanism of camera |
JPS6042742U (en) * | 1983-08-31 | 1985-03-26 | 日本電気株式会社 | semiconductor equipment |
US5468681A (en) * | 1989-08-28 | 1995-11-21 | Lsi Logic Corporation | Process for interconnecting conductive substrates using an interposer having conductive plastic filled vias |
JP2895569B2 (en) | 1990-05-11 | 1999-05-24 | キヤノン株式会社 | Electrical connection member and electric circuit member |
JPH05160305A (en) * | 1991-12-03 | 1993-06-25 | Mitsubishi Electric Corp | Semiconductor device |
JPH05209157A (en) * | 1992-01-29 | 1993-08-20 | Nec Corp | Adhesive electronic device |
JPH06209175A (en) * | 1993-01-08 | 1994-07-26 | Mitsubishi Electric Corp | Heat conduction method |
JPH06252298A (en) * | 1993-03-02 | 1994-09-09 | Fuji Electric Co Ltd | Semiconductor device |
JP3308713B2 (en) | 1994-06-07 | 2002-07-29 | オリジン電気株式会社 | Electronics |
US5753160A (en) * | 1994-10-19 | 1998-05-19 | Ngk Insulators, Ltd. | Method for controlling firing shrinkage of ceramic green body |
JPH10308565A (en) * | 1997-05-02 | 1998-11-17 | Shinko Electric Ind Co Ltd | Wiring board |
JP2000058746A (en) * | 1998-08-10 | 2000-02-25 | Toyota Motor Corp | Device for cooling inside of module |
US6239980B1 (en) * | 1998-08-31 | 2001-05-29 | General Electric Company | Multimodule interconnect structure and process |
US6306680B1 (en) * | 1999-02-22 | 2001-10-23 | General Electric Company | Power overlay chip scale packages for discrete power devices |
JP2000307043A (en) | 1999-04-22 | 2000-11-02 | Mitsubishi Electric Corp | Power semiconductor module |
JP2001015869A (en) | 1999-06-30 | 2001-01-19 | Kyocera Corp | Wiring board |
JP2001298148A (en) | 2000-04-12 | 2001-10-26 | Ngk Spark Plug Co Ltd | Spherical face semiconductor device |
US6420252B1 (en) * | 2000-05-10 | 2002-07-16 | Emcore Corporation | Methods of forming robust metal contacts on compound semiconductors |
WO2002009194A1 (en) * | 2000-07-26 | 2002-01-31 | The Research Foundation Of State University Of New York | Method and system for bonding a semiconductor chip onto a carrier using micro-pins |
JP2002198477A (en) | 2000-12-25 | 2002-07-12 | Toyota Motor Corp | Semiconductor device |
US6469398B1 (en) * | 2001-03-29 | 2002-10-22 | Kabushiki Kaisha Toshiba | Semiconductor package and manufacturing method thereof |
JP4587590B2 (en) | 2001-03-30 | 2010-11-24 | 京セラ株式会社 | Bonding structure of ceramic substrate and conductor pin |
JP3561747B2 (en) * | 2001-03-30 | 2004-09-02 | ユーディナデバイス株式会社 | Multilayer wiring structure of high frequency semiconductor device |
JP2003109689A (en) | 2001-09-30 | 2003-04-11 | Kenichiro Miyahara | Conductive complex |
JP4093765B2 (en) * | 2002-02-08 | 2008-06-04 | 株式会社豊田中央研究所 | Semiconductor device mounting circuit |
JP2004006603A (en) | 2002-03-26 | 2004-01-08 | Fuji Electric Holdings Co Ltd | Semiconductor power device |
JP2003303930A (en) | 2002-04-10 | 2003-10-24 | Toyota Motor Corp | Semiconductor device |
JP2004047598A (en) * | 2002-07-10 | 2004-02-12 | Toyota Industries Corp | Composite material and connection structure |
JP4404602B2 (en) * | 2002-10-24 | 2010-01-27 | 京セラ株式会社 | Ceramics-metal composite and high heat conduction heat dissipation substrate using the same |
JP2004172286A (en) * | 2002-11-19 | 2004-06-17 | Kyocera Chemical Corp | Heat conductive sheet |
JP2004228410A (en) | 2003-01-24 | 2004-08-12 | Kyocera Corp | Wiring board |
JP2004260254A (en) | 2003-02-24 | 2004-09-16 | Kyocera Corp | Transmitting circuit, transmitting module, and radio communication equipment |
JP2004327951A (en) | 2003-03-06 | 2004-11-18 | Shinko Electric Ind Co Ltd | Semiconductor device |
JP4330367B2 (en) | 2003-04-03 | 2009-09-16 | 新光電気工業株式会社 | INTERPOSER, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE |
JP4615272B2 (en) | 2003-09-29 | 2011-01-19 | 富士フイルム株式会社 | Authentication system, program, and building |
JP4619705B2 (en) * | 2004-01-15 | 2011-01-26 | 株式会社東芝 | Semiconductor device |
US20060043603A1 (en) * | 2004-08-31 | 2006-03-02 | Lsi Logic Corporation | Low temperature PB-free processing for semiconductor devices |
US7262444B2 (en) * | 2005-08-17 | 2007-08-28 | General Electric Company | Power semiconductor packaging method and structure |
-
2005
- 2005-02-28 JP JP2005052389A patent/JP4613077B2/en not_active Expired - Fee Related
-
2006
- 2006-02-10 US US11/351,338 patent/US8324726B2/en active Active
- 2006-02-27 DE DE200610009021 patent/DE102006009021B4/en not_active Expired - Fee Related
-
2012
- 2012-06-11 US US13/493,590 patent/US20120244697A1/en not_active Abandoned
- 2012-11-30 US US13/690,661 patent/US9035453B2/en not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2139036A1 (en) * | 2007-04-19 | 2009-12-30 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device |
EP2139036A4 (en) * | 2007-04-19 | 2010-05-26 | Toyota Jidoshokki Kk | Semiconductor device |
WO2008133210A1 (en) | 2007-04-19 | 2008-11-06 | Kabushiki Kaisha Toyota Jidoshokki | Semiconductor device |
WO2009037037A1 (en) * | 2007-09-17 | 2009-03-26 | Robert Bosch Gmbh | Device for cooling electronic components |
EP2577725A2 (en) * | 2010-06-02 | 2013-04-10 | RWTH Aachen | Semiconductor element and method for producing the same |
US9887173B2 (en) | 2011-07-04 | 2018-02-06 | Robert Bosch Gmbh | Method for producing structured sintered connection layers, and semiconductor element having a structured sintered connection layer |
WO2013004543A1 (en) * | 2011-07-04 | 2013-01-10 | Robert Bosch Gmbh | Method for producing structured sintering connection layers and semiconductor component comprising a structured sintering connection layer |
DE102012205240A1 (en) * | 2012-03-30 | 2013-10-02 | Semikron Elektronik Gmbh & Co. Kg | Method for manufacturing substrate for power semiconductor component e.g. MOSFET for power converter, involves arranging electroplating ridges in recesses formed in bottom metallization layer of insulating material portion |
JP2013214738A (en) * | 2012-03-30 | 2013-10-17 | Semikron Elektronik Gmbh & Co Kg | Substrate, and method of manufacturing substrate for at least one power semiconductor component |
DE102012205240B4 (en) * | 2012-03-30 | 2016-08-04 | Semikron Elektronik Gmbh & Co. Kg | Method for producing a substrate for at least one power semiconductor component, method for producing a power semiconductor module and power semiconductor module |
EP2685492A1 (en) * | 2012-07-09 | 2014-01-15 | SEMIKRON Elektronik GmbH & Co. KG | Power semiconductor module with at least one stress-reducing adjustment element |
FR3020186A1 (en) * | 2014-08-08 | 2015-10-23 | Commissariat Energie Atomique | CONNECTOR FOR THE CONNECTION BETWEEN A COMPONENT AND A SUPPORT, COMPRISING A RECEPTACLE WITH A RELIEF |
EP3276661A4 (en) * | 2015-03-23 | 2018-11-21 | Hitachi, Ltd. | Semiconductor device |
DE102016213140A1 (en) * | 2016-07-19 | 2018-01-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Carrier which is equipped with at least one power semiconductor component |
FR3058565A1 (en) * | 2016-11-08 | 2018-05-11 | Valeo Systemes De Controle Moteur | ELECTRONIC POWER MODULE, ELECTRICAL EQUIPMENT AND ELECTRICAL POWER COMPRESSOR COMPRISING SUCH AN ELECTRONIC POWER MODULE |
DE102021130989A1 (en) | 2021-11-25 | 2023-05-25 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | ELECTRONIC DEVICE AND METHOD OF MAKING AN ELECTRONIC DEVICE |
Also Published As
Publication number | Publication date |
---|---|
DE102006009021B4 (en) | 2015-01-22 |
US9035453B2 (en) | 2015-05-19 |
US20130093082A1 (en) | 2013-04-18 |
US20060192253A1 (en) | 2006-08-31 |
US8324726B2 (en) | 2012-12-04 |
US20120244697A1 (en) | 2012-09-27 |
JP2006237429A (en) | 2006-09-07 |
JP4613077B2 (en) | 2011-01-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102006009021B4 (en) | Semiconductor component with electrode part | |
DE102013207804B4 (en) | Method for producing a power module with heat-conducting structures directly connected by means of arc welding | |
DE112012007339B3 (en) | Semiconductor module and method for producing the semiconductor module | |
DE102009032973B4 (en) | Power semiconductor device | |
EP3008753B1 (en) | Power module | |
DE102014212376B4 (en) | Semiconductor device | |
DE10331335B4 (en) | Power semiconductor device | |
DE102014111829B4 (en) | A semiconductor module and a method for its fabrication through advanced embedding technologies | |
DE102014221636B4 (en) | Semiconductor module and method of manufacturing the same | |
DE10102621B4 (en) | power module | |
DE112015000513T5 (en) | Electrode terminal, semiconductor device for electrical energy and method for producing a semiconductor device for electrical energy | |
DE102011082781B4 (en) | SEMICONDUCTOR DEVICE WITH A PLATE ELECTRODE FOR CONNECTING A MULTIPLE OF SEMICONDUCTOR CHIPS | |
DE102011084803A1 (en) | Power semiconductor device | |
DE112016007432B4 (en) | semiconductor device, inverter unit and automobile | |
DE112014005415T5 (en) | Power module and method of manufacturing a power module | |
DE102016219126A1 (en) | Semiconductor device and its manufacturing method | |
DE102004060935B4 (en) | Power semiconductor device | |
DE112014000862T5 (en) | Semiconductor device | |
DE102016214607B4 (en) | Electronic module and method for its manufacture | |
DE102016223651A1 (en) | SEMICONDUCTOR MODULE AND SEMICONDUCTOR DEVICE | |
DE102015223300A1 (en) | Semiconductor device | |
DE102018217231A1 (en) | Semiconductor device and method of manufacturing the same | |
DE102015115132B4 (en) | Semiconductor module with integrated pin or fin cooling structure and method for its manufacture | |
DE102019119233A1 (en) | Selective coating of semiconductor housing cables | |
EP4141923A1 (en) | Power semiconductor component and method for producing a power semiconductor component |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
8125 | Change of the main classification |
Ipc: H01L 23/36 AFI20060227BHDE |
|
8127 | New person/name/address of the applicant |
Owner name: OCTEC INC., TOKYO, JP Owner name: KYOCERA CORP., KYOTO, JP Owner name: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP |
|
R082 | Change of representative |
Representative=s name: HOFFMANN & EITLE, DE Representative=s name: HOFFMANN & EITLE, 81925 MUENCHEN, DE |
|
R081 | Change of applicant/patentee |
Owner name: KYOCERA CORP., JP Free format text: FORMER OWNERS: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP; KYOCERA CORP., KYOTO, JP; OCTEC INC., TOKYO, JP Effective date: 20110718 Owner name: FUJI ELECTRIC CO., LTD., KAWASAKI-SHI, JP Free format text: FORMER OWNERS: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP; KYOCERA CORP., KYOTO, JP; OCTEC INC., TOKYO, JP Effective date: 20110718 Owner name: OCTEC INC., JP Free format text: FORMER OWNERS: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP; KYOCERA CORP., KYOTO, JP; OCTEC INC., TOKYO, JP Effective date: 20110718 Owner name: FUJI ELECTRIC CO., LTD., KAWASAKI-SHI, JP Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD., KYOCERA CORP., OCTEC INC., , JP Effective date: 20110718 Owner name: OCTEC INC., JP Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD., KYOCERA CORP., OCTEC INC., , JP Effective date: 20110718 Owner name: KYOCERA CORP., JP Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD., KYOCERA CORP., OCTEC INC., , JP Effective date: 20110718 Owner name: FUJI ELECTRIC CO., LTD., JP Free format text: FORMER OWNER: FUJI ELECTRIC SYSTEMS CO., LTD., KYOCERA CORP., OCTEC INC., , JP Effective date: 20110718 |
|
R082 | Change of representative |
Representative=s name: HOFFMANN - EITLE PATENT- UND RECHTSANWAELTE PA, DE Effective date: 20110718 Representative=s name: HOFFMANN - EITLE, DE Effective date: 20110718 Representative=s name: HOFFMANN - EITLE, 81925 MUENCHEN, DE |
|
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |