DE102006002683B4 - Licht emittierendes Bauteil - Google Patents

Licht emittierendes Bauteil Download PDF

Info

Publication number
DE102006002683B4
DE102006002683B4 DE102006002683.7A DE102006002683A DE102006002683B4 DE 102006002683 B4 DE102006002683 B4 DE 102006002683B4 DE 102006002683 A DE102006002683 A DE 102006002683A DE 102006002683 B4 DE102006002683 B4 DE 102006002683B4
Authority
DE
Germany
Prior art keywords
layer
light
light emitting
transparent
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE102006002683.7A
Other languages
German (de)
English (en)
Other versions
DE102006002683A1 (de
Inventor
Min-Hsun Hsieh
Ta-Cheng Hsu
Wei-Chih Peng
Ya-Ju Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Edisonled LLC
Original Assignee
Epistar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=36686550&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE102006002683(B4) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Epistar Corp filed Critical Epistar Corp
Publication of DE102006002683A1 publication Critical patent/DE102006002683A1/de
Application granted granted Critical
Publication of DE102006002683B4 publication Critical patent/DE102006002683B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Facsimile Heads (AREA)
DE102006002683.7A 2005-01-25 2006-01-19 Licht emittierendes Bauteil Expired - Lifetime DE102006002683B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TWP94102193 2005-01-25
TW094102193A TWI330413B (en) 2005-01-25 2005-01-25 A light-emitting device

Publications (2)

Publication Number Publication Date
DE102006002683A1 DE102006002683A1 (de) 2006-08-03
DE102006002683B4 true DE102006002683B4 (de) 2019-10-17

Family

ID=36686550

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102006002683.7A Expired - Lifetime DE102006002683B4 (de) 2005-01-25 2006-01-19 Licht emittierendes Bauteil

Country Status (5)

Country Link
US (1) US7489068B2 (https=)
JP (1) JP5008308B2 (https=)
KR (1) KR101059992B1 (https=)
DE (1) DE102006002683B4 (https=)
TW (1) TWI330413B (https=)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8063557B2 (en) * 2003-07-04 2011-11-22 Epistar Corporation Light-emitting device having wavelength-converting materials therewithin
DE102005055293A1 (de) * 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004302A1 (de) 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
US9318327B2 (en) * 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
US20080277682A1 (en) * 2007-03-29 2008-11-13 The Regents Of The University Of California Dual surface-roughened n-face high-brightness led
EP2017898A1 (en) * 2007-07-17 2009-01-21 Vishay Israel Ltd. Semiconductor light-emitting device and method for the manufacture thereof
KR101449000B1 (ko) * 2007-09-06 2014-10-13 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102007060204B4 (de) * 2007-09-28 2019-02-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip
TWI349221B (en) * 2008-02-05 2011-09-21 Au Optronics Corp Sensing structure of a display
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US20120056228A1 (en) * 2010-09-07 2012-03-08 Phostek, Inc. Led chip modules, method for packaging the led chip modules, and moving fixture thereof
JP2012199231A (ja) 2011-03-04 2012-10-18 Semiconductor Energy Lab Co Ltd 表示装置
KR101104645B1 (ko) * 2011-03-25 2012-01-16 (주)세미머티리얼즈 발광 소자 및 그의 제조 방법
CN107086198B (zh) * 2011-08-30 2020-09-11 亮锐控股有限公司 将衬底接合到半导体发光器件的方法
DE102012003638A1 (de) * 2012-02-24 2013-08-29 Limo Patentverwaltung Gmbh & Co. Kg Leuchtdiode
KR101662202B1 (ko) * 2013-10-01 2016-10-04 광주과학기술원 발광 다이오드
JP6387780B2 (ja) * 2013-10-28 2018-09-12 日亜化学工業株式会社 発光装置及びその製造方法
KR20160024170A (ko) 2014-08-25 2016-03-04 삼성전자주식회사 반도체 발광 소자
US11085591B2 (en) 2014-09-28 2021-08-10 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11073248B2 (en) * 2014-09-28 2021-07-27 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
US11421827B2 (en) 2015-06-19 2022-08-23 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US11525547B2 (en) 2014-09-28 2022-12-13 Zhejiang Super Lighting Electric Appliance Co., Ltd LED light bulb with curved filament
US11686436B2 (en) 2014-09-28 2023-06-27 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and light bulb using LED filament
US11997768B2 (en) 2014-09-28 2024-05-28 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
US12007077B2 (en) 2014-09-28 2024-06-11 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED filament and LED light bulb
US11543083B2 (en) 2014-09-28 2023-01-03 Zhejiang Super Lighting Electric Appliance Co., Ltd LED filament and LED light bulb
KR101913855B1 (ko) * 2015-03-04 2018-11-23 제이디엠 주식회사 투명 인쇄회로기판과 이의 제조방법 및 이를 이용한 ｌｅｄ 모듈
JP6668608B2 (ja) * 2015-04-27 2020-03-18 日亜化学工業株式会社 発光装置の製造方法
JP2017147364A (ja) * 2016-02-18 2017-08-24 株式会社東芝 半導体モジュール
US10833222B2 (en) * 2016-08-26 2020-11-10 The Penn State Research Foundation High light extraction efficiency (LEE) light emitting diode (LED)
JP2018148094A (ja) * 2017-03-07 2018-09-20 株式会社ディスコ 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP6719494B2 (ja) 2018-02-07 2020-07-08 直之 村上 追尾レーザー距離計測器の駆動計測で、３次元の数値駆動の制御機器の３次元の駆動数値を演算する方法。
US10982048B2 (en) 2018-04-17 2021-04-20 Jiaxing Super Lighting Electric Appliance Co., Ltd Organosilicon-modified polyimide resin composition and use thereof
JP2019212875A (ja) * 2018-06-08 2019-12-12 信越半導体株式会社 発光素子及び発光素子の製造方法
KR102325791B1 (ko) * 2019-12-05 2021-11-12 웨이브로드 주식회사 반도체 발광소자
JP7011195B2 (ja) * 2020-02-27 2022-01-26 日亜化学工業株式会社 発光装置
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
JP7413941B2 (ja) * 2020-07-03 2024-01-16 信越半導体株式会社 接合型半導体素子及び接合型半導体素子の製造方法
JP7354943B2 (ja) 2020-07-03 2023-10-03 信越半導体株式会社 接合型半導体受光素子及び接合型半導体受光素子の製造方法
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0977280A2 (en) 1998-07-28 2000-02-02 Interuniversitair Micro-Elektronica Centrum Vzw Devices for emitting radiation with a high efficiency and a method for fabricating such devices
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
EP1225643A1 (en) 2001-01-23 2002-07-24 Interuniversitair Microelektronica Centrum Vzw High efficiency unilateral light emitting device and method for fabricating such device
US6657236B1 (en) 1999-12-03 2003-12-02 Cree Lighting Company Enhanced light extraction in LEDs through the use of internal and external optical elements
US6693352B1 (en) 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
US20040119084A1 (en) 2002-12-23 2004-06-24 Min-Hsun Hsieh Light emitting device with a micro-reflection structure carrier

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2836687B2 (ja) * 1993-04-03 1998-12-14 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
JP3758390B2 (ja) 1998-12-14 2006-03-22 パイオニア株式会社 窒化物半導体発光素子及びその製造方法
JP3893874B2 (ja) * 1999-12-21 2007-03-14 日亜化学工業株式会社 窒化物半導体発光素子の製造方法
TW465123B (en) * 2000-02-02 2001-11-21 Ind Tech Res Inst High power white light LED
TW472400B (en) * 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
US6703780B2 (en) * 2001-01-16 2004-03-09 General Electric Company Organic electroluminescent device with a ceramic output coupler and method of making the same
TW544958B (en) 2002-07-15 2003-08-01 Epistar Corp Light emitting diode with an adhesive layer and its manufacturing method
JP4121551B2 (ja) * 2002-10-23 2008-07-23 信越半導体株式会社 発光素子の製造方法及び発光素子
JP2004235505A (ja) * 2003-01-31 2004-08-19 Shin Etsu Handotai Co Ltd 発光素子及び半導体素子用オーミック電極構造
TW579610B (en) * 2003-01-30 2004-03-11 Epistar Corp Nitride light-emitting device having adhered reflective layer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0977280A2 (en) 1998-07-28 2000-02-02 Interuniversitair Micro-Elektronica Centrum Vzw Devices for emitting radiation with a high efficiency and a method for fabricating such devices
US6657236B1 (en) 1999-12-03 2003-12-02 Cree Lighting Company Enhanced light extraction in LEDs through the use of internal and external optical elements
US6693352B1 (en) 2000-06-05 2004-02-17 Emitronix Inc. Contact structure for group III-V semiconductor devices and method of producing the same
US20020017652A1 (en) 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
EP1225643A1 (en) 2001-01-23 2002-07-24 Interuniversitair Microelektronica Centrum Vzw High efficiency unilateral light emitting device and method for fabricating such device
US20040119084A1 (en) 2002-12-23 2004-06-24 Min-Hsun Hsieh Light emitting device with a micro-reflection structure carrier

Also Published As

Publication number Publication date
TWI330413B (en) 2010-09-11
JP5008308B2 (ja) 2012-08-22
KR20060086272A (ko) 2006-07-31
JP2006210916A (ja) 2006-08-10
KR101059992B1 (ko) 2011-08-29
TW200627668A (en) 2006-08-01
US7489068B2 (en) 2009-02-10
US20060163595A1 (en) 2006-07-27
DE102006002683A1 (de) 2006-08-03

Similar Documents

Publication Publication Date Title
DE102006002683B4 (de) Licht emittierendes Bauteil
EP2596534B1 (de) Strahlungsemittierendes bauelement und verfahren zur herstellung von strahlungsemittierenden bauelementen
DE102005031612B4 (de) LED mit einem omnidirektionalen Reflektor und einer transparenten, leitenden Schicht und omnidirektionaler Reflektor für eine LED
DE102005006822B4 (de) Lichtemissions-Bauteil mit organischem Kleber und mit Vertikalstruktur
DE102005008097A1 (de) Flip-Chip-Lichtemissionsbauteil
DE112012003294B4 (de) Optoelektronisches Element und dessen Herstellungsverfahren
DE102014108572B4 (de) Licht emittierendes Element
EP2612372B1 (de) Leuchtdiodenchip
DE10032838B4 (de) Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
DE10357783B4 (de) Nitrid-Lichtemissionsbauteil
EP2130072A2 (de) Anordnung mit einem halbleiterchip und einer lichtleiterschicht
EP1299911B1 (de) Strahlungsemittierender halbleiterchip
DE102004061949B4 (de) LED mit organischer Kleberschicht
DE102019104268A1 (de) Lichtemittierende Vorrichtung und Herstellungsverfahren dafür
DE102022127714A1 (de) Organische Leuchtdiodenanzeige
DE102010032497A1 (de) Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips
DE112015003221B4 (de) Hinterleuchtungseinrichtung und Vorrichtung, aufweisend eine Hinterleuchtungseinrichtung
DE102015111046B4 (de) Optoelektronischer Halbleiterchip
WO2012136421A1 (de) Anzeigevorrichtung
WO2015113926A2 (de) Lichtemittierende anordnung und verfahren zur herstellung einer lichtemittierenden anordnung
DE102005051273B4 (de) Leuchtdiode
DE102005006821A1 (de) Lichtemissions-Dauerbauteil mit organischem Kleber
DE112019007980B4 (de) Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102008014094A1 (de) Strahlungsemittierende Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung
DE102013222702A1 (de) Optoelektronisches Bauelement, optoelektronische Anordnung, Verfahren zum Herstellen eines optischen Elements und Verfahren zum Herstellen eines optoelektronischen Bauelements

Legal Events

Date Code Title Description
R012 Request for examination validly filed

Effective date: 20120917

R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033000000

Ipc: H01L0033220000

R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0033220000

Ipc: H10H0020820000

R081 Change of applicant/patentee

Owner name: EDISONLED LLC, DALLAS, US

Free format text: FORMER OWNER: EPISTAR CORP., HSINCHU, TW

R082 Change of representative

Representative=s name: MUELLER HOFFMANN & PARTNER PATENTANWAELTE MBB, DE

R071 Expiry of right