DE102004055452B4 - Ausgangsschaltung - Google Patents

Ausgangsschaltung Download PDF

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Publication number
DE102004055452B4
DE102004055452B4 DE102004055452A DE102004055452A DE102004055452B4 DE 102004055452 B4 DE102004055452 B4 DE 102004055452B4 DE 102004055452 A DE102004055452 A DE 102004055452A DE 102004055452 A DE102004055452 A DE 102004055452A DE 102004055452 B4 DE102004055452 B4 DE 102004055452B4
Authority
DE
Germany
Prior art keywords
gate
potential
transistor
potential point
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE102004055452A
Other languages
German (de)
English (en)
Other versions
DE102004055452A1 (de
Inventor
Hitoshi Makishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102004055452A1 publication Critical patent/DE102004055452A1/de
Application granted granted Critical
Publication of DE102004055452B4 publication Critical patent/DE102004055452B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Electronic Switches (AREA)
  • Amplifiers (AREA)
DE102004055452A 2004-01-15 2004-11-17 Ausgangsschaltung Expired - Lifetime DE102004055452B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004007977A JP4397697B2 (ja) 2004-01-15 2004-01-15 出力回路
JP2004/007977 2004-01-15

Publications (2)

Publication Number Publication Date
DE102004055452A1 DE102004055452A1 (de) 2005-08-18
DE102004055452B4 true DE102004055452B4 (de) 2008-05-29

Family

ID=34747159

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004055452A Expired - Lifetime DE102004055452B4 (de) 2004-01-15 2004-11-17 Ausgangsschaltung

Country Status (3)

Country Link
US (1) US7408389B2 (enExample)
JP (1) JP4397697B2 (enExample)
DE (1) DE102004055452B4 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4774287B2 (ja) * 2005-12-13 2011-09-14 Ｏｋｉセミコンダクタ株式会社 出力回路
DE102008011603B4 (de) * 2008-02-28 2009-12-31 Semikron Elektronik Gmbh & Co. Kg Schaltung und Verfahren zur Signalspannungsübertragung innerhalb eines Treibers eines Leistungshalbleiterschalters
DE102008011602B4 (de) * 2008-02-28 2010-01-14 Semikron Elektronik Gmbh & Co. Kg Schaltung und Verfahren zur Signalspannungsübertragung innerhalb eines Treibers eines Leistungshalbleiterschalters
JP4686589B2 (ja) * 2008-11-17 2011-05-25 三菱電機株式会社 レベルシフト回路
JP5862520B2 (ja) * 2012-08-31 2016-02-16 三菱電機株式会社 逆レベルシフト回路
IT201600096568A1 (it) 2016-09-27 2018-03-27 St Microelectronics Srl Comparatore di tensione hv con bassa sensibilita' alle variazioni di processi/temperatura e di alimentazione
US10539973B1 (en) 2018-12-17 2020-01-21 Micron Technology, Inc. Low-voltage bias generator based on high-voltage supply
US11979041B2 (en) * 2020-01-08 2024-05-07 GLF INTEGRATED POWER INC., a Delaware corporation Methods and apparatuses for ultra-portable battery system protection and energy saving

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294882A2 (en) * 1987-06-08 1988-12-14 Philips Electronics Uk Limited High voltage semiconductor with integrated low voltage circuitry
US4855618A (en) * 1988-02-16 1989-08-08 Analog Devices, Inc. MOS current mirror with high output impedance and compliance
JPH03106115A (ja) * 1989-09-20 1991-05-02 Hitachi Ltd ドライバ回路
EP0561469A2 (en) * 1992-03-18 1993-09-22 National Semiconductor Corporation Enhancement-depletion mode cascode current mirror
JPH05316755A (ja) * 1992-05-11 1993-11-26 Hitachi Ltd インバータ装置
JP2001147243A (ja) * 1999-11-24 2001-05-29 Mitsubishi Electric Corp アナログ信号検出回路及び半導体電力変換装置の交流側電流検出器
JP2002026714A (ja) * 1995-06-28 2002-01-25 Fuji Electric Co Ltd 高耐圧ｉｃの高耐圧レベルシフト回路
JP2003032102A (ja) * 2001-07-12 2003-01-31 Mitsubishi Electric Corp 逆レベルシフト回路およびパワー用半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4890010A (en) * 1988-12-22 1989-12-26 Ncr Corporation Matched current source serial bus driver
JP3228093B2 (ja) * 1995-06-28 2001-11-12 富士電機株式会社 高耐圧ｉｃ
US6034551A (en) * 1997-04-18 2000-03-07 Adaptec, Inc. Low voltage differential dual receiver
US6400212B1 (en) * 1999-07-13 2002-06-04 National Semiconductor Corporation Apparatus and method for reference voltage generator with self-monitoring

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0294882A2 (en) * 1987-06-08 1988-12-14 Philips Electronics Uk Limited High voltage semiconductor with integrated low voltage circuitry
US4855618A (en) * 1988-02-16 1989-08-08 Analog Devices, Inc. MOS current mirror with high output impedance and compliance
JPH03106115A (ja) * 1989-09-20 1991-05-02 Hitachi Ltd ドライバ回路
EP0561469A2 (en) * 1992-03-18 1993-09-22 National Semiconductor Corporation Enhancement-depletion mode cascode current mirror
JPH05316755A (ja) * 1992-05-11 1993-11-26 Hitachi Ltd インバータ装置
JP2002026714A (ja) * 1995-06-28 2002-01-25 Fuji Electric Co Ltd 高耐圧ｉｃの高耐圧レベルシフト回路
JP2001147243A (ja) * 1999-11-24 2001-05-29 Mitsubishi Electric Corp アナログ信号検出回路及び半導体電力変換装置の交流側電流検出器
JP2003032102A (ja) * 2001-07-12 2003-01-31 Mitsubishi Electric Corp 逆レベルシフト回路およびパワー用半導体装置

Also Published As

Publication number Publication date
US7408389B2 (en) 2008-08-05
JP4397697B2 (ja) 2010-01-13
US20050156636A1 (en) 2005-07-21
DE102004055452A1 (de) 2005-08-18
JP2005202658A (ja) 2005-07-28

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OP8 Request for examination as to paragraph 44 patent law
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
R071 Expiry of right