DE102004028742A1 - Treiberschaltung für Halbleiterbauelement - Google Patents
Treiberschaltung für Halbleiterbauelement Download PDFInfo
- Publication number
- DE102004028742A1 DE102004028742A1 DE102004028742A DE102004028742A DE102004028742A1 DE 102004028742 A1 DE102004028742 A1 DE 102004028742A1 DE 102004028742 A DE102004028742 A DE 102004028742A DE 102004028742 A DE102004028742 A DE 102004028742A DE 102004028742 A1 DE102004028742 A1 DE 102004028742A1
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- transistor
- gate voltage
- gate
- driver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
Landscapes
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Eine Treiberschaltung für ein Halbleiterbauelement weist folgendes auf: einen Transistor (1) mit isoliertem Gate, einen Treiber (2) zum Erzeugen einer Gatespannung, die eine Vielzahl von Spannungspegeln hat, und zum Anlegen der erzeugten Gatespannung an den Transistor (1) und eine Zeitsteuerung (3) zur Steuerung des Zeitpunkts des Anlegens der Gatespannung mit verschiedenen Spannungspegeln auf der Basis einer Signalspannung. Der Treiber (2) erzeugt eine Gatespannung (Va), die niedriger als eine Schwellenspannung des Transistors (1) ist, und eine Gatespannung (+15 V) als eine festgelegte Spannung zum Treiben des Transistors (1). Die Zeitsteuerung (3) steuert den Treiber (2) derart, daß das Anlegen der Gatespannung (Va) vor dem Anlegen der festgelegten Spannung (+15 V) stattfindet.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003-316735 | 2003-09-09 | ||
JP2003316735A JP4323266B2 (ja) | 2003-09-09 | 2003-09-09 | 半導体駆動回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102004028742A1 true DE102004028742A1 (de) | 2005-05-04 |
DE102004028742B4 DE102004028742B4 (de) | 2007-06-21 |
Family
ID=34225253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102004028742A Expired - Lifetime DE102004028742B4 (de) | 2003-09-09 | 2004-06-14 | Treiberschaltung für Halbleiterbauelement |
Country Status (3)
Country | Link |
---|---|
US (1) | US7075355B2 (de) |
JP (1) | JP4323266B2 (de) |
DE (1) | DE102004028742B4 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4869569B2 (ja) * | 2004-06-23 | 2012-02-08 | 株式会社 日立ディスプレイズ | 表示装置 |
JP4595670B2 (ja) * | 2005-05-19 | 2010-12-08 | トヨタ自動車株式会社 | 電圧駆動型スイッチング素子の駆動装置 |
JP5186095B2 (ja) * | 2006-10-02 | 2013-04-17 | 株式会社日立製作所 | ゲート駆動回路 |
TW200820571A (en) * | 2006-10-27 | 2008-05-01 | Fitipower Integrated Tech Inc | Driving device |
JP5221268B2 (ja) * | 2007-11-07 | 2013-06-26 | パナソニック株式会社 | パワースイッチング素子の駆動回路、その駆動方法及びスイッチング電源装置 |
JP4333802B1 (ja) * | 2008-03-18 | 2009-09-16 | トヨタ自動車株式会社 | インバータの駆動装置 |
US9153297B2 (en) * | 2008-04-03 | 2015-10-06 | Infineon Technologies Ag | Integrated circuit and method for manufacturing the same |
JP2012010523A (ja) * | 2010-06-25 | 2012-01-12 | On Semiconductor Trading Ltd | スイッチング制御回路、電源回路 |
JP5447575B2 (ja) * | 2012-04-23 | 2014-03-19 | 株式会社デンソー | 駆動装置 |
US9164522B2 (en) * | 2013-10-11 | 2015-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wake up bias circuit and method of using the same |
JP2015171226A (ja) * | 2014-03-06 | 2015-09-28 | 三菱電機株式会社 | インバータ装置及び空気調和機 |
JP6424349B2 (ja) * | 2014-09-30 | 2018-11-21 | 株式会社エヌエフ回路設計ブロック | スイッチング電源装置 |
US9496864B2 (en) * | 2014-12-18 | 2016-11-15 | General Electric Company | Gate drive circuit and method of operating same |
US10177757B2 (en) * | 2016-12-07 | 2019-01-08 | Hamilton Sundstrand Corporation-Pcss | Single event latchup mitigation with sample and hold |
US10594238B2 (en) * | 2017-06-05 | 2020-03-17 | Rohm Co., Ltd. | Driving circuit for stepping motor |
WO2020257962A1 (en) * | 2019-06-24 | 2020-12-30 | Texas Instruments Incorporated | Switching converter with multiple drive stages and related modes |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01155715A (ja) * | 1987-12-11 | 1989-06-19 | Fuji Electric Co Ltd | 半導体スイッチング素子のゲート駆動回路 |
JP2760590B2 (ja) * | 1989-09-04 | 1998-06-04 | 株式会社東芝 | 電圧駆動形素子の駆動回路 |
JP2910859B2 (ja) * | 1989-09-29 | 1999-06-23 | 株式会社東芝 | 半導体素子の駆動回路 |
JPH05161343A (ja) * | 1991-11-28 | 1993-06-25 | Toshiba F Ee Syst Eng Kk | Mosゲートトランジスタの駆動回路 |
JP3141613B2 (ja) * | 1993-03-31 | 2001-03-05 | 株式会社日立製作所 | 電圧駆動形素子の駆動方法及びその回路 |
JP3132648B2 (ja) | 1996-09-20 | 2001-02-05 | 富士電機株式会社 | 電力変換器におけるゲート駆動回路 |
JPH10150784A (ja) * | 1996-11-15 | 1998-06-02 | Nikon Corp | 振動アクチュエータ |
JPH11112313A (ja) * | 1997-10-02 | 1999-04-23 | Mitsubishi Electric Corp | 半導体回路及びパワートランジスタ保護回路 |
JP3383570B2 (ja) * | 1998-03-10 | 2003-03-04 | 株式会社東芝 | 電圧駆動型電力素子の駆動装置 |
FR2777137B1 (fr) * | 1998-04-06 | 2002-11-08 | Centre Nat Rech Scient | Procede et dispositif de commande de la commutation de transistor de puissance a grille isolee |
JP3769932B2 (ja) * | 1998-04-20 | 2006-04-26 | 株式会社明電舎 | スイッチング素子のゲート駆動回路 |
JP2000083371A (ja) * | 1998-09-02 | 2000-03-21 | Fuji Electric Co Ltd | 電力変換器におけるゲート駆動回路 |
JP3941309B2 (ja) * | 1998-12-03 | 2007-07-04 | 株式会社日立製作所 | 電圧駆動形スイッチング素子のゲート駆動回路 |
KR100433799B1 (ko) | 1998-12-03 | 2004-06-04 | 가부시키가이샤 히타치세이사쿠쇼 | 전압구동형 스위칭 소자의 게이트 구동회로 |
JP2000232347A (ja) * | 1999-02-08 | 2000-08-22 | Toshiba Corp | ゲート回路及びゲート回路制御方法 |
JP3666843B2 (ja) * | 1999-02-26 | 2005-06-29 | 株式会社東芝 | 絶縁ゲート型半導体素子のゲート回路 |
JP4432215B2 (ja) * | 2000-06-05 | 2010-03-17 | 株式会社デンソー | 半導体スイッチング素子のゲート駆動回路 |
JP2004215458A (ja) * | 2003-01-08 | 2004-07-29 | Mitsubishi Electric Corp | 半導体スイッチング素子の駆動回路 |
-
2003
- 2003-09-09 JP JP2003316735A patent/JP4323266B2/ja not_active Expired - Lifetime
-
2004
- 2004-02-13 US US10/777,748 patent/US7075355B2/en not_active Expired - Fee Related
- 2004-06-14 DE DE102004028742A patent/DE102004028742B4/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7075355B2 (en) | 2006-07-11 |
DE102004028742B4 (de) | 2007-06-21 |
US20050052217A1 (en) | 2005-03-10 |
JP4323266B2 (ja) | 2009-09-02 |
JP2005086917A (ja) | 2005-03-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
R071 | Expiry of right |