DE102004028742A1 - Treiberschaltung für Halbleiterbauelement - Google Patents

Treiberschaltung für Halbleiterbauelement Download PDF

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Publication number
DE102004028742A1
DE102004028742A1 DE102004028742A DE102004028742A DE102004028742A1 DE 102004028742 A1 DE102004028742 A1 DE 102004028742A1 DE 102004028742 A DE102004028742 A DE 102004028742A DE 102004028742 A DE102004028742 A DE 102004028742A DE 102004028742 A1 DE102004028742 A1 DE 102004028742A1
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DE
Germany
Prior art keywords
voltage
transistor
gate voltage
gate
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE102004028742A
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English (en)
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DE102004028742B4 (de
Inventor
Toshiyuki Furuie
Makoto Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102004028742A1 publication Critical patent/DE102004028742A1/de
Application granted granted Critical
Publication of DE102004028742B4 publication Critical patent/DE102004028742B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/168Modifications for eliminating interference voltages or currents in composite switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163Soft switching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166Soft switching

Landscapes

  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

Eine Treiberschaltung für ein Halbleiterbauelement weist folgendes auf: einen Transistor (1) mit isoliertem Gate, einen Treiber (2) zum Erzeugen einer Gatespannung, die eine Vielzahl von Spannungspegeln hat, und zum Anlegen der erzeugten Gatespannung an den Transistor (1) und eine Zeitsteuerung (3) zur Steuerung des Zeitpunkts des Anlegens der Gatespannung mit verschiedenen Spannungspegeln auf der Basis einer Signalspannung. Der Treiber (2) erzeugt eine Gatespannung (Va), die niedriger als eine Schwellenspannung des Transistors (1) ist, und eine Gatespannung (+15 V) als eine festgelegte Spannung zum Treiben des Transistors (1). Die Zeitsteuerung (3) steuert den Treiber (2) derart, daß das Anlegen der Gatespannung (Va) vor dem Anlegen der festgelegten Spannung (+15 V) stattfindet.
DE102004028742A 2003-09-09 2004-06-14 Treiberschaltung für Halbleiterbauelement Expired - Lifetime DE102004028742B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003-316735 2003-09-09
JP2003316735A JP4323266B2 (ja) 2003-09-09 2003-09-09 半導体駆動回路

Publications (2)

Publication Number Publication Date
DE102004028742A1 true DE102004028742A1 (de) 2005-05-04
DE102004028742B4 DE102004028742B4 (de) 2007-06-21

Family

ID=34225253

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102004028742A Expired - Lifetime DE102004028742B4 (de) 2003-09-09 2004-06-14 Treiberschaltung für Halbleiterbauelement

Country Status (3)

Country Link
US (1) US7075355B2 (de)
JP (1) JP4323266B2 (de)
DE (1) DE102004028742B4 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4869569B2 (ja) * 2004-06-23 2012-02-08 株式会社 日立ディスプレイズ 表示装置
JP4595670B2 (ja) * 2005-05-19 2010-12-08 トヨタ自動車株式会社 電圧駆動型スイッチング素子の駆動装置
JP5186095B2 (ja) * 2006-10-02 2013-04-17 株式会社日立製作所 ゲート駆動回路
TW200820571A (en) * 2006-10-27 2008-05-01 Fitipower Integrated Tech Inc Driving device
JP5221268B2 (ja) * 2007-11-07 2013-06-26 パナソニック株式会社 パワースイッチング素子の駆動回路、その駆動方法及びスイッチング電源装置
JP4333802B1 (ja) * 2008-03-18 2009-09-16 トヨタ自動車株式会社 インバータの駆動装置
US9153297B2 (en) * 2008-04-03 2015-10-06 Infineon Technologies Ag Integrated circuit and method for manufacturing the same
JP2012010523A (ja) * 2010-06-25 2012-01-12 On Semiconductor Trading Ltd スイッチング制御回路、電源回路
JP5447575B2 (ja) * 2012-04-23 2014-03-19 株式会社デンソー 駆動装置
US9164522B2 (en) * 2013-10-11 2015-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Wake up bias circuit and method of using the same
JP2015171226A (ja) * 2014-03-06 2015-09-28 三菱電機株式会社 インバータ装置及び空気調和機
JP6424349B2 (ja) * 2014-09-30 2018-11-21 株式会社エヌエフ回路設計ブロック スイッチング電源装置
US9496864B2 (en) * 2014-12-18 2016-11-15 General Electric Company Gate drive circuit and method of operating same
US10177757B2 (en) * 2016-12-07 2019-01-08 Hamilton Sundstrand Corporation-Pcss Single event latchup mitigation with sample and hold
US10594238B2 (en) * 2017-06-05 2020-03-17 Rohm Co., Ltd. Driving circuit for stepping motor
WO2020257962A1 (en) * 2019-06-24 2020-12-30 Texas Instruments Incorporated Switching converter with multiple drive stages and related modes

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01155715A (ja) * 1987-12-11 1989-06-19 Fuji Electric Co Ltd 半導体スイッチング素子のゲート駆動回路
JP2760590B2 (ja) * 1989-09-04 1998-06-04 株式会社東芝 電圧駆動形素子の駆動回路
JP2910859B2 (ja) * 1989-09-29 1999-06-23 株式会社東芝 半導体素子の駆動回路
JPH05161343A (ja) * 1991-11-28 1993-06-25 Toshiba F Ee Syst Eng Kk Mosゲートトランジスタの駆動回路
JP3141613B2 (ja) * 1993-03-31 2001-03-05 株式会社日立製作所 電圧駆動形素子の駆動方法及びその回路
JP3132648B2 (ja) 1996-09-20 2001-02-05 富士電機株式会社 電力変換器におけるゲート駆動回路
JPH10150784A (ja) * 1996-11-15 1998-06-02 Nikon Corp 振動アクチュエータ
JPH11112313A (ja) * 1997-10-02 1999-04-23 Mitsubishi Electric Corp 半導体回路及びパワートランジスタ保護回路
JP3383570B2 (ja) * 1998-03-10 2003-03-04 株式会社東芝 電圧駆動型電力素子の駆動装置
FR2777137B1 (fr) * 1998-04-06 2002-11-08 Centre Nat Rech Scient Procede et dispositif de commande de la commutation de transistor de puissance a grille isolee
JP3769932B2 (ja) * 1998-04-20 2006-04-26 株式会社明電舎 スイッチング素子のゲート駆動回路
JP2000083371A (ja) * 1998-09-02 2000-03-21 Fuji Electric Co Ltd 電力変換器におけるゲート駆動回路
JP3941309B2 (ja) * 1998-12-03 2007-07-04 株式会社日立製作所 電圧駆動形スイッチング素子のゲート駆動回路
KR100433799B1 (ko) 1998-12-03 2004-06-04 가부시키가이샤 히타치세이사쿠쇼 전압구동형 스위칭 소자의 게이트 구동회로
JP2000232347A (ja) * 1999-02-08 2000-08-22 Toshiba Corp ゲート回路及びゲート回路制御方法
JP3666843B2 (ja) * 1999-02-26 2005-06-29 株式会社東芝 絶縁ゲート型半導体素子のゲート回路
JP4432215B2 (ja) * 2000-06-05 2010-03-17 株式会社デンソー 半導体スイッチング素子のゲート駆動回路
JP2004215458A (ja) * 2003-01-08 2004-07-29 Mitsubishi Electric Corp 半導体スイッチング素子の駆動回路

Also Published As

Publication number Publication date
US7075355B2 (en) 2006-07-11
DE102004028742B4 (de) 2007-06-21
US20050052217A1 (en) 2005-03-10
JP4323266B2 (ja) 2009-09-02
JP2005086917A (ja) 2005-03-31

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
R071 Expiry of right