DE10152254A1 - Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren - Google Patents
Mikromechanisches Bauelement und entsprechendes HerstellungsverfahrenInfo
- Publication number
- DE10152254A1 DE10152254A1 DE10152254A DE10152254A DE10152254A1 DE 10152254 A1 DE10152254 A1 DE 10152254A1 DE 10152254 A DE10152254 A DE 10152254A DE 10152254 A DE10152254 A DE 10152254A DE 10152254 A1 DE10152254 A1 DE 10152254A1
- Authority
- DE
- Germany
- Prior art keywords
- functional layer
- region
- layer
- micromechanical component
- micromechanical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000002346 layers by function Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 63
- 238000009413 insulation Methods 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 4
- 239000012774 insulation material Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 26
- 238000002955 isolation Methods 0.000 description 18
- 238000001514 detection method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 238000005530 etching Methods 0.000 description 15
- 238000011161 development Methods 0.000 description 13
- 230000018109 developmental process Effects 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 230000033001 locomotion Effects 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 210000001520 comb Anatomy 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010292 electrical insulation Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000019506 cigar Nutrition 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- -1 XeF 2 Chemical class 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5705—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis
- G01C19/5712—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
- B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0136—Comb structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
- B81B2203/033—Trenches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0104—Chemical-mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/016—Passivation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Gyroscopes (AREA)
- Micromachines (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10152254A DE10152254A1 (de) | 2001-10-20 | 2001-10-20 | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
| US10/492,896 US7312553B2 (en) | 2001-10-20 | 2002-09-05 | Micromechanical component and method for producing same |
| EP02772043A EP1441976A2 (de) | 2001-10-20 | 2002-09-05 | Mikromechanisches bauelement und entsprechendes herstellungsverfahren |
| JP2003540075A JP4638671B2 (ja) | 2001-10-20 | 2002-09-05 | マイクロマシニング型の構成エレメントおよび相応の製作法 |
| PCT/DE2002/003283 WO2003037782A2 (de) | 2001-10-20 | 2002-09-05 | Mikromechanisches bauelement und entsprechendes herstellungsverfahren |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10152254A DE10152254A1 (de) | 2001-10-20 | 2001-10-20 | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10152254A1 true DE10152254A1 (de) | 2003-04-30 |
Family
ID=7703424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10152254A Ceased DE10152254A1 (de) | 2001-10-20 | 2001-10-20 | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7312553B2 (enExample) |
| EP (1) | EP1441976A2 (enExample) |
| JP (1) | JP4638671B2 (enExample) |
| DE (1) | DE10152254A1 (enExample) |
| WO (1) | WO2003037782A2 (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009027873A1 (de) | 2009-07-21 | 2011-01-27 | Robert Bosch Gmbh | Mikromechanisches System |
| US8040207B2 (en) | 2009-01-15 | 2011-10-18 | Infineon Technologies Ag | MEMS resonator devices with a plurality of mass elements formed thereon |
| DE102008001071B4 (de) * | 2008-04-09 | 2017-05-24 | Robert Bosch Gmbh | Mikromechanische Aktuatorstruktur und entsprechendes Betätigungsverfahren |
| DE102018213735A1 (de) * | 2018-08-15 | 2020-02-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bauelement und Verfahren zum Herstellen eines Bauelements |
| DE102020210597A1 (de) | 2020-08-20 | 2022-02-24 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer mikroelektromechanischen Struktur und mikroelektromechanische Struktur |
| DE102021200074A1 (de) | 2021-01-07 | 2022-07-07 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanisches Bauteil für eine Sensorvorrichtung |
| DE102022114406A1 (de) | 2022-06-08 | 2023-12-14 | Northrop Grumman Litef Gmbh | Mikroelektromechanische Kopplungsvorrichtung |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1687896B1 (en) * | 2003-11-14 | 2007-06-13 | Koninklijke Philips Electronics N.V. | Semiconductor device with a resonator |
| DE102004006201B4 (de) * | 2004-02-09 | 2011-12-08 | Robert Bosch Gmbh | Drucksensor mit Siliziumchip auf einer Stahlmembran |
| JP4422624B2 (ja) | 2004-03-03 | 2010-02-24 | 日本航空電子工業株式会社 | 微小可動デバイス及びその作製方法 |
| CN100444317C (zh) * | 2004-03-03 | 2008-12-17 | 日本航空电子工业株式会社 | 微型移动装置及其制作方法 |
| EP1727177B1 (en) * | 2004-03-12 | 2017-01-04 | Hamamatsu Photonics K.K. | Process for producing a photoelectric layered member and layered member |
| DE102005004877A1 (de) * | 2005-02-03 | 2006-08-10 | Robert Bosch Gmbh | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
| DE102005029803A1 (de) * | 2005-06-27 | 2007-01-04 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements sowie mikromechanisches Bauelement |
| EP1832841B1 (en) * | 2006-03-10 | 2015-12-30 | STMicroelectronics Srl | Microelectromechanical integrated sensor structure with rotary driving motion |
| US7409862B2 (en) * | 2006-10-18 | 2008-08-12 | Honeywell International Inc. | Systems and methods for isolation of torque and sense capacitors of an accelerometer |
| US7639104B1 (en) | 2007-03-09 | 2009-12-29 | Silicon Clocks, Inc. | Method for temperature compensation in MEMS resonators with isolated regions of distinct material |
| JP5432440B2 (ja) * | 2007-07-04 | 2014-03-05 | キヤノン株式会社 | 揺動体装置 |
| US7999201B2 (en) * | 2008-11-06 | 2011-08-16 | Shandong Gettop Acoustic Co. Ltd. | MEMS G-switch device |
| JP5329932B2 (ja) * | 2008-12-08 | 2013-10-30 | 佐藤 一雄 | シリコン微細構造体の製造方法及び微細流路デバイスの製造方法 |
| WO2011083162A2 (de) * | 2010-01-11 | 2011-07-14 | Elmos Semiconductor Ag | Mikroelektromechanisches halbleiterbauelement |
| GB201020722D0 (en) * | 2010-12-07 | 2011-01-19 | Atlantic Inertial Systems Ltd | Accelerometer |
| EP2515436A1 (en) * | 2011-04-18 | 2012-10-24 | Nxp B.V. | MEMS resonator and method of controlling the same |
| CN103869099B (zh) * | 2012-12-10 | 2016-09-07 | 原相科技股份有限公司 | 具有低膨胀系数差异的微机电装置 |
| US8902010B2 (en) * | 2013-01-02 | 2014-12-02 | Motorola Mobility Llc | Microelectronic machine-based ariable |
| FR3071492B1 (fr) * | 2017-09-25 | 2021-07-09 | Commissariat Energie Atomique | Micro-dispositif comportant un element protege contre une gravure hf et forme d'un materiau comprenant un semi-conducteur et un metal |
| GB2570732B (en) * | 2018-02-06 | 2023-01-11 | Atlantic Inertial Systems Ltd | Angular rate sensors |
| DE102018222615B4 (de) * | 2018-12-20 | 2021-09-02 | Robert Bosch Gmbh | Bauelement mit einer optimierten mehrlagigen Torsionsfeder |
| CN116147600A (zh) * | 2021-10-27 | 2023-05-23 | 苏州明皜传感科技股份有限公司 | 微机电多轴角速度感测器 |
| CN120076700B (zh) * | 2025-04-30 | 2025-07-15 | 成都纤声科技有限公司 | 一种半导体器件及其制备方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472794B1 (en) * | 1992-07-10 | 2002-10-29 | Matsushita Electric Industrial Co., Ltd. | Microactuator |
| DE4241045C1 (de) | 1992-12-05 | 1994-05-26 | Bosch Gmbh Robert | Verfahren zum anisotropen Ätzen von Silicium |
| DE4317274A1 (de) | 1993-05-25 | 1994-12-01 | Bosch Gmbh Robert | Verfahren zur Herstellung oberflächen-mikromechanischer Strukturen |
| US5536988A (en) * | 1993-06-01 | 1996-07-16 | Cornell Research Foundation, Inc. | Compound stage MEM actuator suspended for multidimensional motion |
| DE4419844B4 (de) * | 1994-06-07 | 2009-11-19 | Robert Bosch Gmbh | Beschleunigungssensor |
| DE4420962C2 (de) | 1994-06-16 | 1998-09-17 | Bosch Gmbh Robert | Verfahren zur Bearbeitung von Silizium |
| DE19537814B4 (de) | 1995-10-11 | 2009-11-19 | Robert Bosch Gmbh | Sensor und Verfahren zur Herstellung eines Sensors |
| DE19704454C2 (de) | 1997-02-06 | 2000-03-02 | Bosch Gmbh Robert | Verfahren zur Herstellung oberflächenmikromechanischer Strukturen mittels Ätzung in der Dampfphase |
| US6121552A (en) * | 1997-06-13 | 2000-09-19 | The Regents Of The University Of Caliofornia | Microfabricated high aspect ratio device with an electrical isolation trench |
| US6079873A (en) | 1997-10-20 | 2000-06-27 | The United States Of America As Represented By The Secretary Of Commerce | Micron-scale differential scanning calorimeter on a chip |
| US6151964A (en) * | 1998-05-25 | 2000-11-28 | Citizen Watch Co., Ltd. | Angular velocity sensing device |
| US6291875B1 (en) * | 1998-06-24 | 2001-09-18 | Analog Devices Imi, Inc. | Microfabricated structures with electrical isolation and interconnections |
| JP2000065855A (ja) * | 1998-08-17 | 2000-03-03 | Mitsubishi Electric Corp | 半導体加速度スイッチ、半導体加速度スイッチの製造方法 |
| DE19847455A1 (de) | 1998-10-15 | 2000-04-27 | Bosch Gmbh Robert | Verfahren zur Bearbeitung von Silizium mittels Ätzprozessen |
| JP4238437B2 (ja) | 1999-01-25 | 2009-03-18 | 株式会社デンソー | 半導体力学量センサとその製造方法 |
-
2001
- 2001-10-20 DE DE10152254A patent/DE10152254A1/de not_active Ceased
-
2002
- 2002-09-05 WO PCT/DE2002/003283 patent/WO2003037782A2/de not_active Ceased
- 2002-09-05 JP JP2003540075A patent/JP4638671B2/ja not_active Expired - Fee Related
- 2002-09-05 EP EP02772043A patent/EP1441976A2/de not_active Ceased
- 2002-09-05 US US10/492,896 patent/US7312553B2/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008001071B4 (de) * | 2008-04-09 | 2017-05-24 | Robert Bosch Gmbh | Mikromechanische Aktuatorstruktur und entsprechendes Betätigungsverfahren |
| US8040207B2 (en) | 2009-01-15 | 2011-10-18 | Infineon Technologies Ag | MEMS resonator devices with a plurality of mass elements formed thereon |
| US8476990B2 (en) | 2009-01-15 | 2013-07-02 | Infineon Technologies Ag | MEMS resonator devices |
| DE102010000818B4 (de) * | 2009-01-15 | 2013-12-05 | Infineon Technologies Ag | MEMS-Resonatorbauelemente |
| US8742873B2 (en) | 2009-01-15 | 2014-06-03 | Infineon Technologies Ag | MEMS resonator devices |
| DE102009027873A1 (de) | 2009-07-21 | 2011-01-27 | Robert Bosch Gmbh | Mikromechanisches System |
| DE102009027873B4 (de) | 2009-07-21 | 2022-11-17 | Robert Bosch Gmbh | Mikromechanisches System und zugehöriges Herstellungsverfahren |
| DE102018213735A1 (de) * | 2018-08-15 | 2020-02-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bauelement und Verfahren zum Herstellen eines Bauelements |
| DE102018213735B4 (de) * | 2018-08-15 | 2020-03-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Bauelement und Verfahren zum Herstellen eines Bauelements |
| DE102020210597A1 (de) | 2020-08-20 | 2022-02-24 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer mikroelektromechanischen Struktur und mikroelektromechanische Struktur |
| DE102021200074A1 (de) | 2021-01-07 | 2022-07-07 | Robert Bosch Gesellschaft mit beschränkter Haftung | Mikromechanisches Bauteil für eine Sensorvorrichtung |
| DE102022114406A1 (de) | 2022-06-08 | 2023-12-14 | Northrop Grumman Litef Gmbh | Mikroelektromechanische Kopplungsvorrichtung |
Also Published As
| Publication number | Publication date |
|---|---|
| US7312553B2 (en) | 2007-12-25 |
| EP1441976A2 (de) | 2004-08-04 |
| WO2003037782A2 (de) | 2003-05-08 |
| WO2003037782A3 (de) | 2004-01-29 |
| JP4638671B2 (ja) | 2011-02-23 |
| US20050052092A1 (en) | 2005-03-10 |
| JP2005506910A (ja) | 2005-03-10 |
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