JP4638671B2 - マイクロマシニング型の構成エレメントおよび相応の製作法 - Google Patents

マイクロマシニング型の構成エレメントおよび相応の製作法 Download PDF

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Publication number
JP4638671B2
JP4638671B2 JP2003540075A JP2003540075A JP4638671B2 JP 4638671 B2 JP4638671 B2 JP 4638671B2 JP 2003540075 A JP2003540075 A JP 2003540075A JP 2003540075 A JP2003540075 A JP 2003540075A JP 4638671 B2 JP4638671 B2 JP 4638671B2
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region
layer
micromachining
insulating
silicon
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JP2003540075A
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Japanese (ja)
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JP2005506910A5 (enExample
JP2005506910A (ja
Inventor
レルマー フランツ
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Robert Bosch GmbH
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Robert Bosch GmbH
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5705—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis
    • G01C19/5712—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
    • B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
    • B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0136—Comb structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/033—Trenches
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0104—Chemical-mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/016—Passivation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
JP2003540075A 2001-10-20 2002-09-05 マイクロマシニング型の構成エレメントおよび相応の製作法 Expired - Fee Related JP4638671B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10152254A DE10152254A1 (de) 2001-10-20 2001-10-20 Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
PCT/DE2002/003283 WO2003037782A2 (de) 2001-10-20 2002-09-05 Mikromechanisches bauelement und entsprechendes herstellungsverfahren

Publications (3)

Publication Number Publication Date
JP2005506910A JP2005506910A (ja) 2005-03-10
JP2005506910A5 JP2005506910A5 (enExample) 2006-01-05
JP4638671B2 true JP4638671B2 (ja) 2011-02-23

Family

ID=7703424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003540075A Expired - Fee Related JP4638671B2 (ja) 2001-10-20 2002-09-05 マイクロマシニング型の構成エレメントおよび相応の製作法

Country Status (5)

Country Link
US (1) US7312553B2 (enExample)
EP (1) EP1441976A2 (enExample)
JP (1) JP4638671B2 (enExample)
DE (1) DE10152254A1 (enExample)
WO (1) WO2003037782A2 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
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EP1687896B1 (en) * 2003-11-14 2007-06-13 Koninklijke Philips Electronics N.V. Semiconductor device with a resonator
DE102004006201B4 (de) * 2004-02-09 2011-12-08 Robert Bosch Gmbh Drucksensor mit Siliziumchip auf einer Stahlmembran
JP4422624B2 (ja) 2004-03-03 2010-02-24 日本航空電子工業株式会社 微小可動デバイス及びその作製方法
CN100444317C (zh) * 2004-03-03 2008-12-17 日本航空电子工业株式会社 微型移动装置及其制作方法
EP1727177B1 (en) * 2004-03-12 2017-01-04 Hamamatsu Photonics K.K. Process for producing a photoelectric layered member and layered member
DE102005004877A1 (de) * 2005-02-03 2006-08-10 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
DE102005029803A1 (de) * 2005-06-27 2007-01-04 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements sowie mikromechanisches Bauelement
EP1832841B1 (en) * 2006-03-10 2015-12-30 STMicroelectronics Srl Microelectromechanical integrated sensor structure with rotary driving motion
US7409862B2 (en) * 2006-10-18 2008-08-12 Honeywell International Inc. Systems and methods for isolation of torque and sense capacitors of an accelerometer
US7639104B1 (en) 2007-03-09 2009-12-29 Silicon Clocks, Inc. Method for temperature compensation in MEMS resonators with isolated regions of distinct material
JP5432440B2 (ja) * 2007-07-04 2014-03-05 キヤノン株式会社 揺動体装置
DE102008001071B4 (de) * 2008-04-09 2017-05-24 Robert Bosch Gmbh Mikromechanische Aktuatorstruktur und entsprechendes Betätigungsverfahren
US7999201B2 (en) * 2008-11-06 2011-08-16 Shandong Gettop Acoustic Co. Ltd. MEMS G-switch device
JP5329932B2 (ja) * 2008-12-08 2013-10-30 佐藤 一雄 シリコン微細構造体の製造方法及び微細流路デバイスの製造方法
US8040207B2 (en) 2009-01-15 2011-10-18 Infineon Technologies Ag MEMS resonator devices with a plurality of mass elements formed thereon
DE102009027873B4 (de) 2009-07-21 2022-11-17 Robert Bosch Gmbh Mikromechanisches System und zugehöriges Herstellungsverfahren
WO2011083162A2 (de) * 2010-01-11 2011-07-14 Elmos Semiconductor Ag Mikroelektromechanisches halbleiterbauelement
GB201020722D0 (en) * 2010-12-07 2011-01-19 Atlantic Inertial Systems Ltd Accelerometer
EP2515436A1 (en) * 2011-04-18 2012-10-24 Nxp B.V. MEMS resonator and method of controlling the same
CN103869099B (zh) * 2012-12-10 2016-09-07 原相科技股份有限公司 具有低膨胀系数差异的微机电装置
US8902010B2 (en) * 2013-01-02 2014-12-02 Motorola Mobility Llc Microelectronic machine-based ariable
FR3071492B1 (fr) * 2017-09-25 2021-07-09 Commissariat Energie Atomique Micro-dispositif comportant un element protege contre une gravure hf et forme d'un materiau comprenant un semi-conducteur et un metal
GB2570732B (en) * 2018-02-06 2023-01-11 Atlantic Inertial Systems Ltd Angular rate sensors
DE102018213735B4 (de) * 2018-08-15 2020-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bauelement und Verfahren zum Herstellen eines Bauelements
DE102018222615B4 (de) * 2018-12-20 2021-09-02 Robert Bosch Gmbh Bauelement mit einer optimierten mehrlagigen Torsionsfeder
DE102020210597A1 (de) 2020-08-20 2022-02-24 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer mikroelektromechanischen Struktur und mikroelektromechanische Struktur
DE102021200074A1 (de) 2021-01-07 2022-07-07 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanisches Bauteil für eine Sensorvorrichtung
CN116147600A (zh) * 2021-10-27 2023-05-23 苏州明皜传感科技股份有限公司 微机电多轴角速度感测器
DE102022114406A1 (de) 2022-06-08 2023-12-14 Northrop Grumman Litef Gmbh Mikroelektromechanische Kopplungsvorrichtung
CN120076700B (zh) * 2025-04-30 2025-07-15 成都纤声科技有限公司 一种半导体器件及其制备方法

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US6472794B1 (en) * 1992-07-10 2002-10-29 Matsushita Electric Industrial Co., Ltd. Microactuator
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE4317274A1 (de) 1993-05-25 1994-12-01 Bosch Gmbh Robert Verfahren zur Herstellung oberflächen-mikromechanischer Strukturen
US5536988A (en) * 1993-06-01 1996-07-16 Cornell Research Foundation, Inc. Compound stage MEM actuator suspended for multidimensional motion
DE4419844B4 (de) * 1994-06-07 2009-11-19 Robert Bosch Gmbh Beschleunigungssensor
DE4420962C2 (de) 1994-06-16 1998-09-17 Bosch Gmbh Robert Verfahren zur Bearbeitung von Silizium
DE19537814B4 (de) 1995-10-11 2009-11-19 Robert Bosch Gmbh Sensor und Verfahren zur Herstellung eines Sensors
DE19704454C2 (de) 1997-02-06 2000-03-02 Bosch Gmbh Robert Verfahren zur Herstellung oberflächenmikromechanischer Strukturen mittels Ätzung in der Dampfphase
US6121552A (en) * 1997-06-13 2000-09-19 The Regents Of The University Of Caliofornia Microfabricated high aspect ratio device with an electrical isolation trench
US6079873A (en) 1997-10-20 2000-06-27 The United States Of America As Represented By The Secretary Of Commerce Micron-scale differential scanning calorimeter on a chip
US6151964A (en) * 1998-05-25 2000-11-28 Citizen Watch Co., Ltd. Angular velocity sensing device
US6291875B1 (en) * 1998-06-24 2001-09-18 Analog Devices Imi, Inc. Microfabricated structures with electrical isolation and interconnections
JP2000065855A (ja) * 1998-08-17 2000-03-03 Mitsubishi Electric Corp 半導体加速度スイッチ、半導体加速度スイッチの製造方法
DE19847455A1 (de) 1998-10-15 2000-04-27 Bosch Gmbh Robert Verfahren zur Bearbeitung von Silizium mittels Ätzprozessen
JP4238437B2 (ja) 1999-01-25 2009-03-18 株式会社デンソー 半導体力学量センサとその製造方法

Also Published As

Publication number Publication date
US7312553B2 (en) 2007-12-25
EP1441976A2 (de) 2004-08-04
WO2003037782A2 (de) 2003-05-08
DE10152254A1 (de) 2003-04-30
WO2003037782A3 (de) 2004-01-29
US20050052092A1 (en) 2005-03-10
JP2005506910A (ja) 2005-03-10

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