DE10145297A1 - Verfahren zum Einätzen von Strukturen in einen Ätzkörper mit einem Plasma - Google Patents

Verfahren zum Einätzen von Strukturen in einen Ätzkörper mit einem Plasma

Info

Publication number
DE10145297A1
DE10145297A1 DE10145297A DE10145297A DE10145297A1 DE 10145297 A1 DE10145297 A1 DE 10145297A1 DE 10145297 A DE10145297 A DE 10145297A DE 10145297 A DE10145297 A DE 10145297A DE 10145297 A1 DE10145297 A1 DE 10145297A1
Authority
DE
Germany
Prior art keywords
plasma
frequency
intensity
pulse
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE10145297A
Other languages
German (de)
English (en)
Inventor
Franz Laermer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE10145297A priority Critical patent/DE10145297A1/de
Priority to KR1020047003673A priority patent/KR100910931B1/ko
Priority to PCT/DE2002/002363 priority patent/WO2003028081A2/de
Priority to EP02754283A priority patent/EP1430521A2/de
Priority to US10/473,831 priority patent/US7361287B2/en
Priority to JP2003531510A priority patent/JP4763236B2/ja
Priority to DE10309711A priority patent/DE10309711A1/de
Publication of DE10145297A1 publication Critical patent/DE10145297A1/de
Priority to US10/676,295 priority patent/US7785486B2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
DE10145297A 1999-04-30 2001-09-14 Verfahren zum Einätzen von Strukturen in einen Ätzkörper mit einem Plasma Ceased DE10145297A1 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
DE10145297A DE10145297A1 (de) 2001-09-14 2001-09-14 Verfahren zum Einätzen von Strukturen in einen Ätzkörper mit einem Plasma
KR1020047003673A KR100910931B1 (ko) 2001-09-14 2002-06-28 플라즈마에 의해 구조를 에칭 바디에 에칭하기 위한 방법
PCT/DE2002/002363 WO2003028081A2 (de) 2001-09-14 2002-06-28 Verfahren zum einätzen von strukturen in einen ätzkörper mit einem plasma
EP02754283A EP1430521A2 (de) 2001-09-14 2002-06-28 Verfahren zum einätzen von strukturen in einen ätzkörper mit einem plasma
US10/473,831 US7361287B2 (en) 1999-04-30 2002-06-28 Method for etching structures in an etching body by means of a plasma
JP2003531510A JP4763236B2 (ja) 2001-09-14 2002-06-28 プラズマを用いてエッチングボディにパターンをエッチングする方法
DE10309711A DE10309711A1 (de) 2001-09-14 2003-03-04 Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma
US10/676,295 US7785486B2 (en) 2001-09-14 2003-09-30 Method of etching structures into an etching body using a plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10145297A DE10145297A1 (de) 2001-09-14 2001-09-14 Verfahren zum Einätzen von Strukturen in einen Ätzkörper mit einem Plasma

Publications (1)

Publication Number Publication Date
DE10145297A1 true DE10145297A1 (de) 2003-04-10

Family

ID=7699006

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10145297A Ceased DE10145297A1 (de) 1999-04-30 2001-09-14 Verfahren zum Einätzen von Strukturen in einen Ätzkörper mit einem Plasma

Country Status (5)

Country Link
EP (1) EP1430521A2 (ja)
JP (1) JP4763236B2 (ja)
KR (1) KR100910931B1 (ja)
DE (1) DE10145297A1 (ja)
WO (1) WO2003028081A2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361287B2 (en) 1999-04-30 2008-04-22 Robert Bosch Gmbh Method for etching structures in an etching body by means of a plasma
US7785486B2 (en) 2001-09-14 2010-08-31 Robert Bosch Gmbh Method of etching structures into an etching body using a plasma

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6905626B2 (en) * 2002-07-24 2005-06-14 Unaxis Usa Inc. Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
JP5662079B2 (ja) * 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997014177A1 (en) * 1995-10-13 1997-04-17 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5997687A (en) * 1996-08-23 1999-12-07 Tokyo Electron Limited Plasma processing apparatus
DE19938842A1 (de) * 1998-08-17 2000-02-24 Alfred Friedrich Mayr Dübel
US6214162B1 (en) * 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
DE19957169A1 (de) * 1999-11-27 2001-06-13 Bosch Gmbh Robert Plasmaätzverfahren mit gepulster Substratelektrodenleistung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
JPH02174229A (ja) * 1988-12-27 1990-07-05 Sumitomo Metal Ind Ltd プラズマ装置およびその使用方法
JP3093572B2 (ja) * 1994-07-07 2000-10-03 株式会社半導体エネルギー研究所 ドライエッチング方法
JP3078707B2 (ja) * 1994-07-07 2000-08-21 株式会社半導体エネルギー研究所 減圧ｃｖｄ装置のクリーニング方法
JP3424182B2 (ja) * 1994-09-13 2003-07-07 アネルバ株式会社 表面処理装置
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
JPH09263948A (ja) * 1996-03-29 1997-10-07 Toshiba Corp プラズマを用いた薄膜形成方法、薄膜製造装置、エッチング方法、及びエッチング装置
US5880034A (en) * 1997-04-29 1999-03-09 Princeton University Reduction of semiconductor structure damage during reactive ion etching
JP2000150483A (ja) * 1998-11-16 2000-05-30 C Bui Res:Kk プラズマ処理装置
KR100317915B1 (ko) * 1999-03-22 2001-12-22 윤종용 플라즈마 식각 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997014177A1 (en) * 1995-10-13 1997-04-17 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US5997687A (en) * 1996-08-23 1999-12-07 Tokyo Electron Limited Plasma processing apparatus
US6214162B1 (en) * 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
DE19938842A1 (de) * 1998-08-17 2000-02-24 Alfred Friedrich Mayr Dübel
DE19957169A1 (de) * 1999-11-27 2001-06-13 Bosch Gmbh Robert Plasmaätzverfahren mit gepulster Substratelektrodenleistung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7361287B2 (en) 1999-04-30 2008-04-22 Robert Bosch Gmbh Method for etching structures in an etching body by means of a plasma
US7785486B2 (en) 2001-09-14 2010-08-31 Robert Bosch Gmbh Method of etching structures into an etching body using a plasma

Also Published As

Publication number Publication date
JP4763236B2 (ja) 2011-08-31
JP2005504439A (ja) 2005-02-10
EP1430521A2 (de) 2004-06-23
KR20040031082A (ko) 2004-04-09
KR100910931B1 (ko) 2009-08-06
WO2003028081A3 (de) 2003-08-07
WO2003028081A2 (de) 2003-04-03

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R002 Refusal decision in examination/registration proceedings
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