DE1009311B - Verfahren zur Anbringung eines ohmschen Kontaktes auf einem halbleitenden Koerper aus einem p-leitenden Tellurid eines zweiwertigen Metalls - Google Patents
Verfahren zur Anbringung eines ohmschen Kontaktes auf einem halbleitenden Koerper aus einem p-leitenden Tellurid eines zweiwertigen MetallsInfo
- Publication number
- DE1009311B DE1009311B DEN11498A DEN0011498A DE1009311B DE 1009311 B DE1009311 B DE 1009311B DE N11498 A DEN11498 A DE N11498A DE N0011498 A DEN0011498 A DE N0011498A DE 1009311 B DE1009311 B DE 1009311B
- Authority
- DE
- Germany
- Prior art keywords
- ohmic contact
- telluride
- applying
- divalent metal
- body made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims description 6
- 239000002184 metal Substances 0.000 title claims description 6
- 238000000034 method Methods 0.000 title claims description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 9
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 150000004772 tellurides Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000589614 Pseudomonas stutzeri Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL339990X | 1954-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1009311B true DE1009311B (de) | 1957-05-29 |
Family
ID=19784660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEN11498A Pending DE1009311B (de) | 1954-12-01 | 1955-11-28 | Verfahren zur Anbringung eines ohmschen Kontaktes auf einem halbleitenden Koerper aus einem p-leitenden Tellurid eines zweiwertigen Metalls |
Country Status (7)
Country | Link |
---|---|
US (1) | US2865794A (enrdf_load_stackoverflow) |
BE (1) | BE543253A (enrdf_load_stackoverflow) |
CH (1) | CH339990A (enrdf_load_stackoverflow) |
DE (1) | DE1009311B (enrdf_load_stackoverflow) |
FR (1) | FR1136613A (enrdf_load_stackoverflow) |
GB (1) | GB789338A (enrdf_load_stackoverflow) |
NL (2) | NL192839A (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL112167C (enrdf_load_stackoverflow) * | 1956-05-15 | |||
US3038241A (en) * | 1958-12-22 | 1962-06-12 | Sylvania Electric Prod | Semiconductor device |
US3080261A (en) * | 1959-07-13 | 1963-03-05 | Minnesota Mining & Mfg | Bonding of lead based alloys to silicate based ceramic members |
NL256979A (enrdf_load_stackoverflow) * | 1959-10-19 | |||
US3232719A (en) * | 1962-01-17 | 1966-02-01 | Transitron Electronic Corp | Thermoelectric bonding material |
US3188594A (en) * | 1962-01-25 | 1965-06-08 | Gen Electric | Thermally sensitive resistances |
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3327137A (en) * | 1964-04-10 | 1967-06-20 | Energy Conversion Devices Inc | Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances |
US3366518A (en) * | 1964-07-01 | 1968-01-30 | Ibm | High sensitivity diodes |
US4461785A (en) * | 1982-11-19 | 1984-07-24 | E. I. Du Pont De Nemours And Company | Process for electrical terminal contact metallization |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1751361A (en) * | 1926-06-01 | 1930-03-18 | Ruben Rectifier Corp | Electric-current rectifier |
NL154007B (nl) * | 1949-08-17 | Sips Ident Photo Gr Sanguin | Inrichting voor bloedgroepbepaling. | |
BE506280A (enrdf_load_stackoverflow) * | 1950-10-10 | |||
US2790736A (en) * | 1955-01-31 | 1957-04-30 | Rohm & Haas | Methods of making coated paper products and the products obtained |
-
0
- BE BE543253D patent/BE543253A/xx unknown
- NL NL88273D patent/NL88273C/xx active
- NL NL192839D patent/NL192839A/xx unknown
-
1955
- 1955-11-28 DE DEN11498A patent/DE1009311B/de active Pending
- 1955-11-28 GB GB34019/55A patent/GB789338A/en not_active Expired
- 1955-11-29 FR FR1136613D patent/FR1136613A/fr not_active Expired
- 1955-11-29 CH CH339990D patent/CH339990A/de unknown
- 1955-12-01 US US550502A patent/US2865794A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR1136613A (fr) | 1957-05-16 |
NL88273C (enrdf_load_stackoverflow) | |
CH339990A (de) | 1959-07-31 |
GB789338A (en) | 1958-01-22 |
US2865794A (en) | 1958-12-23 |
BE543253A (enrdf_load_stackoverflow) | |
NL192839A (enrdf_load_stackoverflow) |
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