CH339990A - Verfahren zum Anbringen eines Ohmschen Kontaktes auf einem halbleitenden Körper aus einem p-leitfähigen Tellurid eines zweiwertigen Metalles - Google Patents
Verfahren zum Anbringen eines Ohmschen Kontaktes auf einem halbleitenden Körper aus einem p-leitfähigen Tellurid eines zweiwertigen MetallesInfo
- Publication number
- CH339990A CH339990A CH339990DA CH339990A CH 339990 A CH339990 A CH 339990A CH 339990D A CH339990D A CH 339990DA CH 339990 A CH339990 A CH 339990A
- Authority
- CH
- Switzerland
- Prior art keywords
- applying
- ohmic contact
- body made
- divalent metal
- semiconducting body
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/903—Metal to nonmetal
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacture And Refinement Of Metals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL339990X | 1954-12-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH339990A true CH339990A (de) | 1959-07-31 |
Family
ID=19784660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH339990D CH339990A (de) | 1954-12-01 | 1955-11-29 | Verfahren zum Anbringen eines Ohmschen Kontaktes auf einem halbleitenden Körper aus einem p-leitfähigen Tellurid eines zweiwertigen Metalles |
Country Status (7)
Country | Link |
---|---|
US (1) | US2865794A (de) |
BE (1) | BE543253A (de) |
CH (1) | CH339990A (de) |
DE (1) | DE1009311B (de) |
FR (1) | FR1136613A (de) |
GB (1) | GB789338A (de) |
NL (2) | NL88273C (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL235480A (de) * | 1956-05-15 | |||
US3038241A (en) * | 1958-12-22 | 1962-06-12 | Sylvania Electric Prod | Semiconductor device |
US3080261A (en) * | 1959-07-13 | 1963-03-05 | Minnesota Mining & Mfg | Bonding of lead based alloys to silicate based ceramic members |
NL256979A (de) * | 1959-10-19 | |||
US3232719A (en) * | 1962-01-17 | 1966-02-01 | Transitron Electronic Corp | Thermoelectric bonding material |
US3188594A (en) * | 1962-01-25 | 1965-06-08 | Gen Electric | Thermally sensitive resistances |
US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
US3327137A (en) * | 1964-04-10 | 1967-06-20 | Energy Conversion Devices Inc | Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances |
US3366518A (en) * | 1964-07-01 | 1968-01-30 | Ibm | High sensitivity diodes |
US4461785A (en) * | 1982-11-19 | 1984-07-24 | E. I. Du Pont De Nemours And Company | Process for electrical terminal contact metallization |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1751361A (en) * | 1926-06-01 | 1930-03-18 | Ruben Rectifier Corp | Electric-current rectifier |
NL154007B (nl) * | 1949-08-17 | Sips Ident Photo Gr Sanguin | Inrichting voor bloedgroepbepaling. | |
BE506280A (de) * | 1950-10-10 | |||
US2790736A (en) * | 1955-01-31 | 1957-04-30 | Rohm & Haas | Methods of making coated paper products and the products obtained |
-
0
- NL NL192839D patent/NL192839A/xx unknown
- BE BE543253D patent/BE543253A/xx unknown
- NL NL88273D patent/NL88273C/xx active
-
1955
- 1955-11-28 GB GB34019/55A patent/GB789338A/en not_active Expired
- 1955-11-28 DE DEN11498A patent/DE1009311B/de active Pending
- 1955-11-29 CH CH339990D patent/CH339990A/de unknown
- 1955-11-29 FR FR1136613D patent/FR1136613A/fr not_active Expired
- 1955-12-01 US US550502A patent/US2865794A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1009311B (de) | 1957-05-29 |
FR1136613A (fr) | 1957-05-16 |
NL88273C (de) | |
GB789338A (en) | 1958-01-22 |
NL192839A (de) | |
US2865794A (en) | 1958-12-23 |
BE543253A (de) |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH424732A (de) | Verfahren zum Herstellen eines hochreinen Halbleiterstabes | |
CH340050A (de) | Verfahren und Einrichtung zum Auftragen von Schichten aus faserverstärkten Kunststoffen auf Formen oder auf zu beschichtende Gegenstände | |
CH384972A (de) | Verfahren zum elektrolytischen Aufbringen eines glänzenden Überzuges aus Gold oder einer Goldlegierung | |
CH339990A (de) | Verfahren zum Anbringen eines Ohmschen Kontaktes auf einem halbleitenden Körper aus einem p-leitfähigen Tellurid eines zweiwertigen Metalles | |
CH330205A (de) | Verfahren zum Ziehen eines stabförmigen kristallinen Körpers, vorzugsweise Halbleiterkörpers | |
CH365802A (de) | Verfahren zur grossflächigen Kontaktierung eines Siliziumkörpers | |
CH347236A (de) | Einrichtung zum Aufbringen eines Überzuges auf Drähte | |
AT326899B (de) | Verfahren zum aufbringen eines uberzuges aus polyathylenterephthalat auf einen stahldraht | |
CH372962A (de) | Verfahren zum Ablegen eines endlosen Bandes | |
CH339023A (de) | Verfahren zum Ätzen der Oberfläche eines halbleitenden Körpers aus einem Tellurid eines zweiwertigen Metalles | |
CH341571A (de) | Verfahren zur Herstellung eines Halbleiterkörpers der Grenzschichtbauart | |
CH335766A (de) | Verfahren zur Herstellung eines Halbleitergerätes | |
CH359483A (de) | Verfahren zum Plattieren der Oberfläche eines Körpers aus halbleitendem Material | |
CH374868A (de) | Verfahren zum elektrolytischen Ätzen eines Halbleiterkörpers mit p-n-Übergang | |
CH399607A (de) | Verfahren zum Verbinden eines Metallkörpers mit einem keramischen Körper | |
AT193495B (de) | Verfahren zur Anbringung eines ohmschen Kontaktes auf einem halbleitenden Körper aus einem p-leitfähigen Tellurid eines zweiwertigen Metalles | |
CH338535A (de) | Verfahren zum Anbringen eines feinmaschigen leitenden Netzwerkes an der Oberfläche eines isolierenden Trägers | |
CH333678A (de) | Verfahren zum Herstellen eines Stromwenders | |
CH327296A (de) | Verfahren zum elektrolytischen Anbringen einer Eisenschicht auf einem Gegenstand | |
CH414572A (de) | Verfahren zum Herstellen eines halbleitenden Elements | |
CH354169A (de) | Verfahren zur Herstellung eines halbleitenden Elektrodensystems mit einem Körper aus einem halbleitenden Selenid oder Tellurid eines zweiwertigen Metalles | |
CH347580A (de) | Verfahren zum Anbringen einer Elektrode auf einem halbleitenden Körper | |
CH372759A (de) | Verfahren zum Auflegieren eines Kontaktes auf einen halbleitenden Körper | |
AT239854B (de) | Verfahren zum Verbinden eines Metalleiters mit einem Halbleiterkörper | |
AT197436B (de) | Verfahren zum Anbringen eines Kontaktes auf Silizium |