CH341571A - Verfahren zur Herstellung eines Halbleiterkörpers der Grenzschichtbauart - Google Patents

Verfahren zur Herstellung eines Halbleiterkörpers der Grenzschichtbauart

Info

Publication number
CH341571A
CH341571A CH341571DA CH341571A CH 341571 A CH341571 A CH 341571A CH 341571D A CH341571D A CH 341571DA CH 341571 A CH341571 A CH 341571A
Authority
CH
Switzerland
Prior art keywords
manufacturing
type semiconductor
semiconductor body
interface type
interface
Prior art date
Application number
Other languages
English (en)
Inventor
Southern Fuller Calvin
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH341571A publication Critical patent/CH341571A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
CH341571D 1954-03-05 1954-11-23 Verfahren zur Herstellung eines Halbleiterkörpers der Grenzschichtbauart CH341571A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US414272A US3015590A (en) 1954-03-05 1954-03-05 Method of forming semiconductive bodies

Publications (1)

Publication Number Publication Date
CH341571A true CH341571A (de) 1959-10-15

Family

ID=23640727

Family Applications (1)

Application Number Title Priority Date Filing Date
CH341571D CH341571A (de) 1954-03-05 1954-11-23 Verfahren zur Herstellung eines Halbleiterkörpers der Grenzschichtbauart

Country Status (7)

Country Link
US (1) US3015590A (de)
JP (1) JPS306984B1 (de)
BE (1) BE536122A (de)
CH (1) CH341571A (de)
FR (1) FR1114786A (de)
GB (1) GB782662A (de)
NL (1) NL193073A (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241711A (de) * 1958-09-23
US3150999A (en) * 1961-02-17 1964-09-29 Transitron Electronic Corp Radiant energy transducer
US3152926A (en) * 1961-04-18 1964-10-13 Tung Sol Electric Inc Photoelectric transducer
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3298880A (en) * 1962-08-24 1967-01-17 Hitachi Ltd Method of producing semiconductor devices
US3215571A (en) * 1962-10-01 1965-11-02 Bell Telephone Labor Inc Fabrication of semiconductor bodies
NL6407230A (de) * 1963-09-28 1965-03-29
US3295030A (en) * 1963-12-18 1966-12-27 Signetics Corp Field effect transistor and method
US3418170A (en) * 1964-09-09 1968-12-24 Air Force Usa Solar cell panels from nonuniform dendrites
US3484314A (en) * 1967-02-23 1969-12-16 Itt Water vapor control in vapor-solid diffusion of boron
US4135950A (en) * 1975-09-22 1979-01-23 Communications Satellite Corporation Radiation hardened solar cell
US4360701A (en) * 1981-05-15 1982-11-23 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Heat transparent high intensity high efficiency solar cell
JPH0624200B2 (ja) * 1989-04-28 1994-03-30 信越半導体株式会社 半導体デバイス用基板の加工方法
US4994420A (en) * 1989-10-12 1991-02-19 Dow Corning Corporation Method for forming ceramic materials, including superconductors
US5258077A (en) * 1991-09-13 1993-11-02 Solec International, Inc. High efficiency silicon solar cells and method of fabrication
EP0631301A1 (de) * 1993-06-21 1994-12-28 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Herstellverfahren für ein Leistungshalbleiterbauelement für hohe Abkommutierungssteilheit

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1774410A (en) * 1925-10-05 1930-08-26 Philips Nv Process of precipitating boron
US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
US2528454A (en) * 1946-11-07 1950-10-31 Hermann I Schlesinger Coating process
US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
BE500302A (de) * 1949-11-30
US2671735A (en) * 1950-07-07 1954-03-09 Bell Telephone Labor Inc Electrical resistors and methods of making them
BE509317A (de) * 1951-03-07 1900-01-01
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals

Also Published As

Publication number Publication date
FR1114786A (fr) 1956-04-17
BE536122A (de)
GB782662A (en) 1957-09-11
NL193073A (de)
JPS306984B1 (de) 1955-09-29
US3015590A (en) 1962-01-02

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