CH339990A - Method for applying an ohmic contact to a semiconducting body made of a p-conductive telluride of a divalent metal - Google Patents

Method for applying an ohmic contact to a semiconducting body made of a p-conductive telluride of a divalent metal

Info

Publication number
CH339990A
CH339990A CH339990DA CH339990A CH 339990 A CH339990 A CH 339990A CH 339990D A CH339990D A CH 339990DA CH 339990 A CH339990 A CH 339990A
Authority
CH
Switzerland
Prior art keywords
applying
ohmic contact
body made
divalent metal
semiconducting body
Prior art date
Application number
Other languages
German (de)
Inventor
Anne Kroeger Ferdinand
Nobel Dirk De
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH339990A publication Critical patent/CH339990A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal
CH339990D 1954-12-01 1955-11-29 Method for applying an ohmic contact to a semiconducting body made of a p-conductive telluride of a divalent metal CH339990A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL339990X 1954-12-01

Publications (1)

Publication Number Publication Date
CH339990A true CH339990A (en) 1959-07-31

Family

ID=19784660

Family Applications (1)

Application Number Title Priority Date Filing Date
CH339990D CH339990A (en) 1954-12-01 1955-11-29 Method for applying an ohmic contact to a semiconducting body made of a p-conductive telluride of a divalent metal

Country Status (7)

Country Link
US (1) US2865794A (en)
BE (1) BE543253A (en)
CH (1) CH339990A (en)
DE (1) DE1009311B (en)
FR (1) FR1136613A (en)
GB (1) GB789338A (en)
NL (2) NL88273C (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL235480A (en) * 1956-05-15
US3038241A (en) * 1958-12-22 1962-06-12 Sylvania Electric Prod Semiconductor device
US3080261A (en) * 1959-07-13 1963-03-05 Minnesota Mining & Mfg Bonding of lead based alloys to silicate based ceramic members
NL256979A (en) * 1959-10-19
US3232719A (en) * 1962-01-17 1966-02-01 Transitron Electronic Corp Thermoelectric bonding material
US3188594A (en) * 1962-01-25 1965-06-08 Gen Electric Thermally sensitive resistances
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3327137A (en) * 1964-04-10 1967-06-20 Energy Conversion Devices Inc Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US4461785A (en) * 1982-11-19 1984-07-24 E. I. Du Pont De Nemours And Company Process for electrical terminal contact metallization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1751361A (en) * 1926-06-01 1930-03-18 Ruben Rectifier Corp Electric-current rectifier
NL154007B (en) * 1949-08-17 Sips Ident Photo Gr Sanguin DEVICE FOR BLOOD GROUP DETERMINATION.
BE506280A (en) * 1950-10-10
US2790736A (en) * 1955-01-31 1957-04-30 Rohm & Haas Methods of making coated paper products and the products obtained

Also Published As

Publication number Publication date
FR1136613A (en) 1957-05-16
NL192839A (en)
DE1009311B (en) 1957-05-29
NL88273C (en)
BE543253A (en)
GB789338A (en) 1958-01-22
US2865794A (en) 1958-12-23

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