DE10009656A1 - Verfahren zur Herstellung einer Halbleiterscheibe - Google Patents
Verfahren zur Herstellung einer HalbleiterscheibeInfo
- Publication number
- DE10009656A1 DE10009656A1 DE2000109656 DE10009656A DE10009656A1 DE 10009656 A1 DE10009656 A1 DE 10009656A1 DE 2000109656 DE2000109656 DE 2000109656 DE 10009656 A DE10009656 A DE 10009656A DE 10009656 A1 DE10009656 A1 DE 10009656A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor wafer
- polishing
- semiconductor
- wafer
- elastic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 121
- 238000012360 testing method Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000012545 processing Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 77
- 238000005498 polishing Methods 0.000 claims description 72
- 238000000227 grinding Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 26
- 238000005259 measurement Methods 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 2
- 239000003082 abrasive agent Substances 0.000 claims 1
- 238000002512 chemotherapy Methods 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 238000004377 microelectronic Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 83
- 230000008569 process Effects 0.000 description 29
- 238000012512 characterization method Methods 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000004744 fabric Substances 0.000 description 9
- 238000007517 polishing process Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241001676573 Minium Species 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2000109656 DE10009656B4 (de) | 2000-02-24 | 2000-02-24 | Verfahren zur Herstellung einer Halbleiterscheibe |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2000109656 DE10009656B4 (de) | 2000-02-24 | 2000-02-24 | Verfahren zur Herstellung einer Halbleiterscheibe |
Publications (2)
Publication Number | Publication Date |
---|---|
DE10009656A1 true DE10009656A1 (de) | 2000-12-28 |
DE10009656B4 DE10009656B4 (de) | 2005-12-08 |
Family
ID=7632910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2000109656 Expired - Fee Related DE10009656B4 (de) | 2000-02-24 | 2000-02-24 | Verfahren zur Herstellung einer Halbleiterscheibe |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE10009656B4 (et) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10217374A1 (de) * | 2002-04-18 | 2003-06-18 | Wacker Siltronic Halbleitermat | Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer Herstellung |
DE102004061054A1 (de) * | 2004-12-18 | 2006-07-06 | Infineon Technologies Ag | Verfahren zum Befestigen eines Substrats und Substrathalteeinrichtung |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010031364A1 (de) * | 2010-07-15 | 2012-01-19 | Gebr. Schmid Gmbh & Co. | Träger für einen Siliziumblock, Trägeranordnung mit einem solchen Träger und Verfahren zur Herstellung einer solchen Trägeranordnung |
US10556317B2 (en) | 2016-03-03 | 2020-02-11 | P.R. Hoffman Machine Products Inc. | Polishing machine wafer holder |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR910009320B1 (ko) * | 1986-08-19 | 1991-11-09 | 미쓰비시 마테리알 가부시기가이샤 | 연마장치 |
EP0272531B1 (en) * | 1986-12-08 | 1991-07-31 | Sumitomo Electric Industries Limited | Surface grinding machine |
JP2632738B2 (ja) * | 1990-04-27 | 1997-07-23 | 信越半導体 株式会社 | パッキングパッド、および半導体ウェーハの研磨方法 |
JP2953060B2 (ja) * | 1990-12-28 | 1999-09-27 | 三菱化学ポリエステルフィルム株式会社 | 高密度磁気記録媒体 |
US5205082A (en) * | 1991-12-20 | 1993-04-27 | Cybeq Systems, Inc. | Wafer polisher head having floating retainer ring |
US5329732A (en) * | 1992-06-15 | 1994-07-19 | Speedfam Corporation | Wafer polishing method and apparatus |
DE4224395A1 (de) * | 1992-07-23 | 1994-01-27 | Wacker Chemitronic | Halbleiterscheiben mit definiert geschliffener Verformung und Verfahren zu ihrer Herstellung |
JP3311116B2 (ja) * | 1993-10-28 | 2002-08-05 | 株式会社東芝 | 半導体製造装置 |
US5643053A (en) * | 1993-12-27 | 1997-07-01 | Applied Materials, Inc. | Chemical mechanical polishing apparatus with improved polishing control |
US5769696A (en) * | 1995-02-10 | 1998-06-23 | Advanced Micro Devices, Inc. | Chemical-mechanical polishing of thin materials using non-baked carrier film |
US5875559A (en) * | 1995-10-27 | 1999-03-02 | Applied Materials, Inc. | Apparatus for measuring the profile of a polishing pad in a chemical mechanical polishing system |
JPH09201765A (ja) * | 1996-01-25 | 1997-08-05 | Shin Etsu Handotai Co Ltd | バッキングパッドおよび半導体ウエーハの研磨方法 |
US5876273A (en) * | 1996-04-01 | 1999-03-02 | Kabushiki Kaisha Toshiba | Apparatus for polishing a wafer |
JP3696690B2 (ja) * | 1996-04-23 | 2005-09-21 | 不二越機械工業株式会社 | ウェーハの研磨装置システム |
JPH09321001A (ja) * | 1996-05-31 | 1997-12-12 | Komatsu Electron Metals Co Ltd | 半導体ウェハの研磨方法 |
US5787595A (en) * | 1996-08-09 | 1998-08-04 | Memc Electric Materials, Inc. | Method and apparatus for controlling flatness of polished semiconductor wafer |
JP2738392B1 (ja) * | 1996-11-05 | 1998-04-08 | 日本電気株式会社 | 半導体装置の研磨装置及び研磨方法 |
JPH10156710A (ja) * | 1996-11-27 | 1998-06-16 | Shin Etsu Handotai Co Ltd | 薄板の研磨方法および研磨装置 |
DE19651761A1 (de) * | 1996-12-12 | 1998-06-18 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben |
US5948204A (en) * | 1996-12-30 | 1999-09-07 | Intel Corporation | Wafer carrier ring method and apparatus for chemical-mechanical planarization |
JPH10217112A (ja) * | 1997-02-06 | 1998-08-18 | Speedfam Co Ltd | Cmp装置 |
US5842910A (en) * | 1997-03-10 | 1998-12-01 | International Business Machines Corporation | Off-center grooved polish pad for CMP |
DE19719503C2 (de) * | 1997-05-07 | 2002-05-02 | Wolters Peter Werkzeugmasch | Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung |
US5921855A (en) * | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
DE19722679A1 (de) * | 1997-05-30 | 1998-12-03 | Wacker Siltronic Halbleitermat | Scheibenhalter und Verfahren zur Herstellung einer Halbleiterscheibe |
US5951370A (en) * | 1997-10-02 | 1999-09-14 | Speedfam-Ipec Corp. | Method and apparatus for monitoring and controlling the flatness of a polishing pad |
DE19748020A1 (de) * | 1997-10-30 | 1999-05-06 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben |
US5964646A (en) * | 1997-11-17 | 1999-10-12 | Strasbaugh | Grinding process and apparatus for planarizing sawed wafers |
DE19755975A1 (de) * | 1997-12-16 | 1999-06-17 | Wolters Peter Werkzeugmasch | Halter für flache Werkstücke, insbesondere Halbleiterwafer |
US5993293A (en) * | 1998-06-17 | 1999-11-30 | Speedram Corporation | Method and apparatus for improved semiconductor wafer polishing |
-
2000
- 2000-02-24 DE DE2000109656 patent/DE10009656B4/de not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10217374A1 (de) * | 2002-04-18 | 2003-06-18 | Wacker Siltronic Halbleitermat | Vielzahl von Halbleiterscheiben aus Silicium und Verfahren zu ihrer Herstellung |
DE102004061054A1 (de) * | 2004-12-18 | 2006-07-06 | Infineon Technologies Ag | Verfahren zum Befestigen eines Substrats und Substrathalteeinrichtung |
Also Published As
Publication number | Publication date |
---|---|
DE10009656B4 (de) | 2005-12-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OAV | Publication of unexamined application with consent of applicant | ||
OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: WACKER SILTRONIC AG, 84489 BURGHAUSEN, DE |
|
8127 | New person/name/address of the applicant |
Owner name: SILTRONIC AG, 81737 MUENCHEN, DE |
|
8364 | No opposition during term of opposition | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee | ||
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20140902 |