DD274830A1 - Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken - Google Patents

Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken Download PDF

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Publication number
DD274830A1
DD274830A1 DD88318880A DD31888088A DD274830A1 DD 274830 A1 DD274830 A1 DD 274830A1 DD 88318880 A DD88318880 A DD 88318880A DD 31888088 A DD31888088 A DD 31888088A DD 274830 A1 DD274830 A1 DD 274830A1
Authority
DD
German Democratic Republic
Prior art keywords
gas
reactor
permeable
processing
wall system
Prior art date
Application number
DD88318880A
Other languages
German (de)
English (en)
Inventor
Rainer Moeller
Dietmar Resch
Lutz Fabian
Original Assignee
Elektromat Veb
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elektromat Veb filed Critical Elektromat Veb
Priority to DD88318880A priority Critical patent/DD274830A1/de
Priority to US07/378,533 priority patent/US4981722A/en
Priority to DE3923538A priority patent/DE3923538A1/de
Priority to FR898910295A priority patent/FR2635377B3/fr
Priority to JP1198113A priority patent/JPH02101169A/ja
Priority to GB8917677A priority patent/GB2222182B/en
Publication of DD274830A1 publication Critical patent/DD274830A1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
DD88318880A 1988-08-12 1988-08-12 Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken DD274830A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DD88318880A DD274830A1 (de) 1988-08-12 1988-08-12 Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken
US07/378,533 US4981722A (en) 1988-08-12 1989-07-11 Apparatus for the gas-phase processing of disk-shaped workpieces
DE3923538A DE3923538A1 (de) 1988-08-12 1989-07-15 Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken
FR898910295A FR2635377B3 (fr) 1988-08-12 1989-07-31 Dispositif pour le traitement en phases gazeuses de pieces d'oeuvre en forme de plaques, notamment des reacteurs pour le depot chimique sous plasma
JP1198113A JPH02101169A (ja) 1988-08-12 1989-08-01 円板形工作物を気相加工するための装置
GB8917677A GB2222182B (en) 1988-08-12 1989-08-02 Equipment for the gas-phase treatment of disc-shaped workpieces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DD88318880A DD274830A1 (de) 1988-08-12 1988-08-12 Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken

Publications (1)

Publication Number Publication Date
DD274830A1 true DD274830A1 (de) 1990-01-03

Family

ID=5601697

Family Applications (1)

Application Number Title Priority Date Filing Date
DD88318880A DD274830A1 (de) 1988-08-12 1988-08-12 Vorrichtung zur gasphasenbearbeitung von scheibenfoermigen werkstuecken

Country Status (6)

Country Link
US (1) US4981722A (fr)
JP (1) JPH02101169A (fr)
DD (1) DD274830A1 (fr)
DE (1) DE3923538A1 (fr)
FR (1) FR2635377B3 (fr)
GB (1) GB2222182B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19851824C2 (de) * 1998-11-10 2002-04-04 Infineon Technologies Ag CVD-Reaktor

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US5213650A (en) * 1989-08-25 1993-05-25 Applied Materials, Inc. Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
JPH0525648A (ja) * 1991-07-15 1993-02-02 Matsushita Electric Ind Co Ltd プラズマｃｖｄ成膜方法
US6379466B1 (en) * 1992-01-17 2002-04-30 Applied Materials, Inc. Temperature controlled gas distribution plate
JP2581487B2 (ja) * 1992-06-15 1997-02-12 中外炉工業株式会社 プラズマ成膜装置における成膜方法
US5716494A (en) * 1992-06-22 1998-02-10 Matsushita Electric Industrial Co., Ltd. Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
CH687987A5 (de) * 1993-05-03 1997-04-15 Balzers Hochvakuum Verfahren zur Erhoehung der Beschichtungsrate in einem Plasmaentladungsraum und Plasmakammer.
US5384008A (en) * 1993-06-18 1995-01-24 Applied Materials, Inc. Process and apparatus for full wafer deposition
US5449410A (en) * 1993-07-28 1995-09-12 Applied Materials, Inc. Plasma processing apparatus
ES2135719T3 (es) * 1994-03-29 1999-11-01 Schott Glas Procedimiento y dispositivo pcvd de recubrimiento de substratos curvados.
US5485935A (en) * 1994-04-01 1996-01-23 Xerox Corporation Capture system employing diverter fluid nozzle
US5460284A (en) * 1994-04-01 1995-10-24 Xerox Corporation Capture system employing annular fluid stream
US5976310A (en) * 1995-01-03 1999-11-02 Applied Materials, Inc. Plasma etch system
JP3925566B2 (ja) * 1996-11-15 2007-06-06 キヤノンアネルバ株式会社 薄膜形成装置
US5972078A (en) * 1997-07-31 1999-10-26 Fsi International, Inc. Exhaust rinse manifold for use with a coating apparatus
US6051099A (en) * 1997-10-14 2000-04-18 International Business Machines Corporation Apparatus for achieving etch rate uniformity
US6153150A (en) * 1998-01-12 2000-11-28 Advanced Technology Materials, Inc. Apparatus and method for controlled decomposition oxidation of gaseous pollutants
US6261524B1 (en) 1999-01-12 2001-07-17 Advanced Technology Materials, Inc. Advanced apparatus for abatement of gaseous pollutants
JPH11297681A (ja) * 1998-04-07 1999-10-29 Mitsubishi Electric Corp 高誘電率薄膜形成用ｃｖｄ装置および高誘電率薄膜の形成方法
KR100319494B1 (ko) * 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
US6446572B1 (en) * 2000-08-18 2002-09-10 Tokyo Electron Limited Embedded plasma source for plasma density improvement
TWI224815B (en) * 2001-08-01 2004-12-01 Tokyo Electron Ltd Gas processing apparatus and gas processing method
US7569193B2 (en) * 2003-12-19 2009-08-04 Applied Materials, Inc. Apparatus and method for controlled combustion of gaseous pollutants
US7736599B2 (en) * 2004-11-12 2010-06-15 Applied Materials, Inc. Reactor design to reduce particle deposition during process abatement
US7682574B2 (en) * 2004-11-18 2010-03-23 Applied Materials, Inc. Safety, monitoring and control features for thermal abatement reactor
US8095240B2 (en) * 2004-11-18 2012-01-10 Applied Materials, Inc. Methods for starting and operating a thermal abatement system
EP1954926A2 (fr) * 2005-10-31 2008-08-13 Applied Materials, Inc. Reacteur de moderation de process
DE102008026000B4 (de) * 2008-05-29 2012-03-22 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zur Beschichtung flächiger Substrate
KR20220019244A (ko) * 2019-06-06 2022-02-16 피코순 오와이 다공성 입구

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US4435445A (en) * 1982-05-13 1984-03-06 Energy Conversion Devices, Inc. Photo-assisted CVD
JPS60166030A (ja) * 1984-02-09 1985-08-29 Mitsubishi Electric Corp 光化学反応による膜形成装置
JPS61196529A (ja) * 1985-02-25 1986-08-30 Semiconductor Energy Lab Co Ltd 薄膜形成装置
DE3772659D1 (de) * 1986-06-28 1991-10-10 Ulvac Corp Verfahren und vorrichtung zum beschichten unter anwendung einer cvd-beschichtungstechnik.
US4994301A (en) * 1986-06-30 1991-02-19 Nihon Sinku Gijutsu Kabusiki Kaisha ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
EP0255454A3 (fr) * 1986-07-26 1991-11-21 Nihon Shinku Gijutsu Kabushiki Kaisha Dispositif pour déposition chimique en phase vapeur
EP0296891B1 (fr) * 1987-06-26 1996-01-10 Applied Materials, Inc. Procédé pour l'autonettoyage d'une chambre de réaction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19851824C2 (de) * 1998-11-10 2002-04-04 Infineon Technologies Ag CVD-Reaktor

Also Published As

Publication number Publication date
FR2635377B3 (fr) 1990-07-20
GB2222182B (en) 1992-11-18
US4981722A (en) 1991-01-01
JPH02101169A (ja) 1990-04-12
DE3923538A1 (de) 1990-02-22
GB8917677D0 (en) 1989-09-20
FR2635377A3 (fr) 1990-02-16
GB2222182A (en) 1990-02-28

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Legal Events

Date Code Title Description
NPI Change in the person, name or address of the patentee (addendum to changes before extension act)
RPI Change in the person, name or address of the patentee (searches according to art. 11 and 12 extension act)
ENJ Ceased due to non-payment of renewal fee