DD136907A1 - Integrierte injektionsschaltung - Google Patents

Integrierte injektionsschaltung

Info

Publication number
DD136907A1
DD136907A1 DD78203095A DD20309578A DD136907A1 DD 136907 A1 DD136907 A1 DD 136907A1 DD 78203095 A DD78203095 A DD 78203095A DD 20309578 A DD20309578 A DD 20309578A DD 136907 A1 DD136907 A1 DD 136907A1
Authority
DD
German Democratic Republic
Prior art keywords
integrated injection
injection switching
switching
integrated
injection
Prior art date
Application number
DD78203095A
Other languages
German (de)
English (en)
Inventor
Artashes R Nazarian
Vyacheslav Y Kremlev
Vilyam N Korin
Viktor I Sladkov
Boris V Venkov
Vadim V Lavrov
Original Assignee
Artashes R Nazarian
Vyacheslav Y Kremlev
Vilyam N Korin
Viktor I Sladkov
Boris V Venkov
Vadim V Lavrov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU772441385A external-priority patent/SU602055A1/ru
Priority claimed from SU772537101A external-priority patent/SU646391A1/ru
Application filed by Artashes R Nazarian, Vyacheslav Y Kremlev, Vilyam N Korin, Viktor I Sladkov, Boris V Venkov, Vadim V Lavrov filed Critical Artashes R Nazarian
Publication of DD136907A1 publication Critical patent/DD136907A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/09418—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DD78203095A 1977-01-06 1978-01-04 Integrierte injektionsschaltung DD136907A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SU772441385A SU602055A1 (ru) 1977-01-06 1977-01-06 Интегральный логический элемент
SU772537101A SU646391A1 (ru) 1977-11-01 1977-11-01 Полевой транзистор
SU2537006 1977-11-11

Publications (1)

Publication Number Publication Date
DD136907A1 true DD136907A1 (de) 1979-08-01

Family

ID=27356306

Family Applications (1)

Application Number Title Priority Date Filing Date
DD78203095A DD136907A1 (de) 1977-01-06 1978-01-04 Integrierte injektionsschaltung

Country Status (9)

Country Link
JP (1) JPS53108291A (OSRAM)
CH (1) CH616276A5 (OSRAM)
CS (1) CS199407B1 (OSRAM)
DD (1) DD136907A1 (OSRAM)
DE (1) DE2800335A1 (OSRAM)
FR (1) FR2377123A1 (OSRAM)
GB (1) GB1565918A (OSRAM)
NL (1) NL7800046A (OSRAM)
PL (1) PL119495B1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5540051A (en) * 1978-09-12 1980-03-21 Mitsubishi Electric Corp T-joint and production thereof
JPS573651Y2 (OSRAM) * 1979-10-08 1982-01-22
GB2130790B (en) * 1982-10-26 1986-04-16 Plessey Co Plc Integrated injection logic device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321796C2 (de) * 1973-04-30 1982-07-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekttransistor
JPS5811102B2 (ja) * 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路

Also Published As

Publication number Publication date
PL119495B1 (en) 1982-01-30
NL7800046A (nl) 1978-07-10
DE2800335A1 (de) 1978-07-13
PL203827A1 (pl) 1978-10-23
FR2377123B1 (OSRAM) 1980-05-16
CS199407B1 (en) 1980-07-31
CH616276A5 (en) 1980-03-14
JPS53108291A (en) 1978-09-20
GB1565918A (en) 1980-04-23
FR2377123A1 (fr) 1978-08-04

Similar Documents

Publication Publication Date Title
SE7805740L (sv) Formsprutningsforfarande
AT373779B (de) Injektionsspritze
AT374370B (de) Injektionsspritze
BR7703826A (pt) Local de injecao
NL7800912A (nl) Injectie-apparaat.
NL187734C (nl) Spuitgietinrichting.
PL206481A1 (pl) Urzadzenie wtryskowe
SE7801583L (sv) Plastkomposition
BE857245A (nl) Faksimileschakeling
SE7804914L (sv) Omkopplingsmekanism
SE7803443L (sv) Omkopplingskrets
SE7709894L (sv) Injekteringsanordning
AT357282B (de) Giessform
PL206900A1 (pl) Wlewnica
AT362175B (de) Einspritzpflug
BR7808166A (pt) Dispositivo injetor
SE7808326L (sv) Elektronstrale-arrangemang
DD134169A1 (de) Integrierte logische schaltung
AT346885B (de) Schienenweiche
BE871664A (fr) Commutateurs
PL205825A1 (pl) Regulator przelaczajacy
NL7800046A (nl) Geintegreerde injectieschakeling.
SE7805876L (sv) Aminoformaldehydplast
SE7811972L (sv) Halvledaromkopplare
FI54767C (fi) Brandspaerr foer kanaler i ventilationsanlaeggningar