CZ294892A3 - Process for producing integrated optical components by making use of silicon mask - Google Patents
Process for producing integrated optical components by making use of silicon mask Download PDFInfo
- Publication number
- CZ294892A3 CZ294892A3 CS922948A CS294892A CZ294892A3 CZ 294892 A3 CZ294892 A3 CZ 294892A3 CS 922948 A CS922948 A CS 922948A CS 294892 A CS294892 A CS 294892A CZ 294892 A3 CZ294892 A3 CZ 294892A3
- Authority
- CZ
- Czechia
- Prior art keywords
- silicon
- mask
- ion exchange
- layer
- glass body
- Prior art date
Links
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000003287 optical effect Effects 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 45
- 239000011521 glass Substances 0.000 claims abstract description 45
- 238000005342 ion exchange Methods 0.000 claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 150000003839 salts Chemical class 0.000 claims abstract description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- 230000000873 masking effect Effects 0.000 claims description 8
- 238000001020 plasma etching Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000000746 purification Methods 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 239000003599 detergent Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- WKMKTIVRRLOHAJ-UHFFFAOYSA-N oxygen(2-);thallium(1+) Chemical compound [O-2].[Tl+].[Tl+] WKMKTIVRRLOHAJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910003438 thallium oxide Inorganic materials 0.000 claims description 4
- 238000000992 sputter etching Methods 0.000 claims 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims 1
- 229960000909 sulfur hexafluoride Drugs 0.000 claims 1
- 239000010410 layer Substances 0.000 description 15
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- FYWSTUCDSVYLPV-UHFFFAOYSA-N nitrooxythallium Chemical compound [Tl+].[O-][N+]([O-])=O FYWSTUCDSVYLPV-UHFFFAOYSA-N 0.000 description 6
- 230000001012 protector Effects 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052716 thallium Inorganic materials 0.000 description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- CSNNHWWHGAXBCP-UHFFFAOYSA-L magnesium sulphate Substances [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 150000003475 thallium Chemical class 0.000 description 1
- 150000003476 thallium compounds Chemical class 0.000 description 1
- -1 thallium ions Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
- C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
- C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1345—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion exchange
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Surface Treatment Of Glass (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9111923A FR2681855B1 (fr) | 1991-09-27 | 1991-09-27 | Procede de production de composants en optique integree par echange d'ions utilisant un masque en silicium, et procedes pour la realisation et l'elimination finale dudit masque. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CZ294892A3 true CZ294892A3 (en) | 1993-04-14 |
Family
ID=9417366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS922948A CZ294892A3 (en) | 1991-09-27 | 1992-09-25 | Process for producing integrated optical components by making use of silicon mask |
Country Status (14)
| Country | Link |
|---|---|
| US (1) | US5281303A (cg-RX-API-DMAC7.html) |
| EP (1) | EP0539711B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JPH05254892A (cg-RX-API-DMAC7.html) |
| KR (1) | KR930005929A (cg-RX-API-DMAC7.html) |
| AU (1) | AU661029B2 (cg-RX-API-DMAC7.html) |
| BR (1) | BR9203676A (cg-RX-API-DMAC7.html) |
| CA (1) | CA2077984A1 (cg-RX-API-DMAC7.html) |
| CZ (1) | CZ294892A3 (cg-RX-API-DMAC7.html) |
| DE (1) | DE69203324T2 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2681855B1 (cg-RX-API-DMAC7.html) |
| HU (1) | HUT64287A (cg-RX-API-DMAC7.html) |
| MX (1) | MX9205500A (cg-RX-API-DMAC7.html) |
| SK (1) | SK294892A3 (cg-RX-API-DMAC7.html) |
| TW (1) | TW238414B (cg-RX-API-DMAC7.html) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69324235T2 (de) * | 1992-10-12 | 1999-08-12 | Toray Industries, Inc., Tokio/Tokyo | Wasserdichtes gewebe mit hohem wasserdruckwiderstand und hoher dampfdurchlässigkeit, sowie dessen herstellung |
| FR2764309B1 (fr) * | 1997-06-06 | 1999-08-27 | Corning Inc | Procede de creation d'une couche de silicium sur une surface |
| US8673163B2 (en) | 2008-06-27 | 2014-03-18 | Apple Inc. | Method for fabricating thin sheets of glass |
| US7810355B2 (en) | 2008-06-30 | 2010-10-12 | Apple Inc. | Full perimeter chemical strengthening of substrates |
| JP5616907B2 (ja) | 2009-03-02 | 2014-10-29 | アップル インコーポレイテッド | ポータブル電子デバイスのガラスカバーを強化する技術 |
| US20110019354A1 (en) * | 2009-03-02 | 2011-01-27 | Christopher Prest | Techniques for Strengthening Glass Covers for Portable Electronic Devices |
| US9778685B2 (en) | 2011-05-04 | 2017-10-03 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US9213451B2 (en) | 2010-06-04 | 2015-12-15 | Apple Inc. | Thin glass for touch panel sensors and methods therefor |
| US10189743B2 (en) | 2010-08-18 | 2019-01-29 | Apple Inc. | Enhanced strengthening of glass |
| US8873028B2 (en) | 2010-08-26 | 2014-10-28 | Apple Inc. | Non-destructive stress profile determination in chemically tempered glass |
| US8824140B2 (en) | 2010-09-17 | 2014-09-02 | Apple Inc. | Glass enclosure |
| US10781135B2 (en) * | 2011-03-16 | 2020-09-22 | Apple Inc. | Strengthening variable thickness glass |
| US9725359B2 (en) | 2011-03-16 | 2017-08-08 | Apple Inc. | Electronic device having selectively strengthened glass |
| US9128666B2 (en) | 2011-05-04 | 2015-09-08 | Apple Inc. | Housing for portable electronic device with reduced border region |
| US9944554B2 (en) | 2011-09-15 | 2018-04-17 | Apple Inc. | Perforated mother sheet for partial edge chemical strengthening and method therefor |
| US9516149B2 (en) | 2011-09-29 | 2016-12-06 | Apple Inc. | Multi-layer transparent structures for electronic device housings |
| US10144669B2 (en) | 2011-11-21 | 2018-12-04 | Apple Inc. | Self-optimizing chemical strengthening bath for glass |
| US10133156B2 (en) | 2012-01-10 | 2018-11-20 | Apple Inc. | Fused opaque and clear glass for camera or display window |
| US8684613B2 (en) | 2012-01-10 | 2014-04-01 | Apple Inc. | Integrated camera window |
| US8773848B2 (en) | 2012-01-25 | 2014-07-08 | Apple Inc. | Fused glass device housings |
| US9946302B2 (en) | 2012-09-19 | 2018-04-17 | Apple Inc. | Exposed glass article with inner recessed area for portable electronic device housing |
| US9459661B2 (en) | 2013-06-19 | 2016-10-04 | Apple Inc. | Camouflaged openings in electronic device housings |
| US9886062B2 (en) | 2014-02-28 | 2018-02-06 | Apple Inc. | Exposed glass article with enhanced stiffness for portable electronic device housing |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3575746A (en) * | 1967-12-12 | 1971-04-20 | Air Reduction | Method for forming resistive and photoetched resistive and conductive glaze patterns |
| GB1279464A (en) * | 1968-10-03 | 1972-06-28 | Nippon Selfoc Co Ltd | Production of light conducting glass fibres |
| US3857689A (en) * | 1971-12-28 | 1974-12-31 | Nippon Selfoc Co Ltd | Ion exchange process for manufacturing integrated optical circuits |
| JPS5742547A (en) * | 1980-08-25 | 1982-03-10 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of optical glass part |
| CA1255382A (en) * | 1984-08-10 | 1989-06-06 | Masao Kawachi | Hybrid optical integrated circuit with alignment guides |
| JPS6235524A (ja) * | 1985-08-08 | 1987-02-16 | Nec Corp | 半導体装置の製造方法 |
| JPH0727888B2 (ja) * | 1985-10-22 | 1995-03-29 | 日本電信電話株式会社 | ドライエツチング方法 |
| US4842629A (en) * | 1986-12-01 | 1989-06-27 | Siemens Aktiengesellschaft | Method for producing buried regions of raised refractive index in a glass member by ion exchange |
| JP2725319B2 (ja) * | 1988-11-07 | 1998-03-11 | 富士通株式会社 | 荷電粒子線マスクの製造方法 |
-
1991
- 1991-09-27 FR FR9111923A patent/FR2681855B1/fr not_active Expired - Fee Related
-
1992
- 1992-09-10 CA CA002077984A patent/CA2077984A1/en not_active Abandoned
- 1992-09-10 US US07/943,187 patent/US5281303A/en not_active Expired - Fee Related
- 1992-09-17 EP EP92115885A patent/EP0539711B1/en not_active Expired - Lifetime
- 1992-09-17 DE DE69203324T patent/DE69203324T2/de not_active Expired - Fee Related
- 1992-09-17 AU AU24541/92A patent/AU661029B2/en not_active Ceased
- 1992-09-22 BR BR929203676A patent/BR9203676A/pt not_active Application Discontinuation
- 1992-09-25 HU HU9203073A patent/HUT64287A/hu unknown
- 1992-09-25 SK SK2948-92A patent/SK294892A3/sk unknown
- 1992-09-25 MX MX9205500A patent/MX9205500A/es not_active IP Right Cessation
- 1992-09-25 CZ CS922948A patent/CZ294892A3/cs unknown
- 1992-09-26 KR KR1019920017609A patent/KR930005929A/ko not_active Abandoned
- 1992-09-28 JP JP4281103A patent/JPH05254892A/ja active Pending
- 1992-10-05 TW TW081107959A patent/TW238414B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| HUT64287A (en) | 1993-12-28 |
| DE69203324T2 (de) | 1996-01-04 |
| CA2077984A1 (en) | 1993-03-28 |
| TW238414B (cg-RX-API-DMAC7.html) | 1995-01-11 |
| JPH05254892A (ja) | 1993-10-05 |
| AU2454192A (en) | 1993-04-01 |
| SK294892A3 (en) | 1995-03-08 |
| KR930005929A (ko) | 1993-04-20 |
| BR9203676A (pt) | 1993-04-20 |
| EP0539711A1 (en) | 1993-05-05 |
| DE69203324D1 (de) | 1995-08-10 |
| HU9203073D0 (en) | 1992-12-28 |
| FR2681855A1 (fr) | 1993-04-02 |
| US5281303A (en) | 1994-01-25 |
| EP0539711B1 (en) | 1995-07-05 |
| AU661029B2 (en) | 1995-07-13 |
| MX9205500A (es) | 1993-04-01 |
| FR2681855B1 (fr) | 1993-12-31 |
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