CS237971B1 - Control semiconductor device - Google Patents
Control semiconductor device Download PDFInfo
- Publication number
- CS237971B1 CS237971B1 CS816263A CS626381A CS237971B1 CS 237971 B1 CS237971 B1 CS 237971B1 CS 816263 A CS816263 A CS 816263A CS 626381 A CS626381 A CS 626381A CS 237971 B1 CS237971 B1 CS 237971B1
- Authority
- CS
- Czechoslovakia
- Prior art keywords
- zone
- control electrode
- electrode
- washer
- control
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract 12
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000005275 alloying Methods 0.000 claims 1
- 230000000295 complement effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract 3
- 235000008733 Citrus aurantifolia Nutrition 0.000 description 2
- 241000283986 Lepus Species 0.000 description 2
- 241001474791 Proboscis Species 0.000 description 2
- 235000011941 Tilia x europaea Nutrition 0.000 description 2
- 239000004571 lime Substances 0.000 description 2
- AQOSPGCCTHGZFL-UHFFFAOYSA-N 1-(3a-hydroxy-7-methoxy-1,2,4,8b-tetrahydropyrrolo[2,3-b]indol-3-yl)ethanone Chemical compound COC1=CC=C2NC3(O)N(C(C)=O)CCC3C2=C1 AQOSPGCCTHGZFL-UHFFFAOYSA-N 0.000 description 1
- 125000006519 CCH3 Chemical group 0.000 description 1
- 101000985278 Escherichia coli 5-carboxymethyl-2-hydroxymuconate Delta-isomerase Proteins 0.000 description 1
- 102100040448 Leukocyte cell-derived chemotaxin 1 Human genes 0.000 description 1
- 241000408551 Meza Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 240000003768 Solanum lycopersicum Species 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD80224827A DD154049A1 (de) | 1980-10-30 | 1980-10-30 | Steuerbares halbleiterbauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CS626381A1 CS626381A1 (en) | 1984-11-19 |
| CS237971B1 true CS237971B1 (en) | 1985-11-13 |
Family
ID=5526947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS816263A CS237971B1 (en) | 1980-10-30 | 1981-08-20 | Control semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4550332A (de) |
| JP (1) | JPS57103353A (de) |
| CS (1) | CS237971B1 (de) |
| DD (1) | DD154049A1 (de) |
| DE (1) | DE3131608A1 (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0111803B1 (de) * | 1982-12-13 | 1989-03-01 | General Electric Company | Laterale Gleichrichter mit isoliertem Gate |
| US4694313A (en) * | 1985-02-19 | 1987-09-15 | Harris Corporation | Conductivity modulated semiconductor structure |
| US4937647A (en) * | 1986-11-06 | 1990-06-26 | Texas Instruments Incorporated | SCR-DMOS circuit for driving electroluminescent displays |
| JP2839595B2 (ja) * | 1989-11-30 | 1998-12-16 | 株式会社東芝 | 絶縁ゲート付きｇｔｏサイリスタ |
| US5016076A (en) * | 1990-02-28 | 1991-05-14 | At&T Bell Laboratories | Lateral MOS controlled thyristor |
| US5278076A (en) * | 1990-02-28 | 1994-01-11 | At&T Bell Laboratories | Method of marking a lateral mos controlled thyristor |
| DE4228832C2 (de) * | 1992-08-29 | 1994-11-24 | Daimler Benz Ag | Feldeffekt-gesteuertes Halbleiterbauelement |
| JP3781452B2 (ja) * | 1995-03-30 | 2006-05-31 | 株式会社東芝 | 誘電体分離半導体装置およびその製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4193836A (en) * | 1963-12-16 | 1980-03-18 | Signetics Corporation | Method for making semiconductor structure |
| US3812405A (en) * | 1973-01-29 | 1974-05-21 | Motorola Inc | Stable thyristor device |
| US3943555A (en) * | 1974-05-02 | 1976-03-09 | Rca Corporation | SOS Bipolar transistor |
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| JPS6040717B2 (ja) * | 1977-06-10 | 1985-09-12 | ソニー株式会社 | 半導体装置 |
| US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
| US4329705A (en) * | 1979-05-21 | 1982-05-11 | Exxon Research & Engineering Co. | VMOS/Bipolar power switching device |
| US4253162A (en) * | 1979-08-28 | 1981-02-24 | Rca Corporation | Blocked source node field-effect circuitry |
| US4364073A (en) * | 1980-03-25 | 1982-12-14 | Rca Corporation | Power MOSFET with an anode region |
-
1980
- 1980-10-30 DD DD80224827A patent/DD154049A1/de not_active IP Right Cessation
-
1981
- 1981-08-10 DE DE3131608A patent/DE3131608A1/de not_active Withdrawn
- 1981-08-20 CS CS816263A patent/CS237971B1/cs unknown
- 1981-10-29 JP JP56172186A patent/JPS57103353A/ja active Pending
- 1981-11-09 US US06/319,369 patent/US4550332A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3131608A1 (de) | 1982-06-24 |
| US4550332A (en) | 1985-10-29 |
| CS626381A1 (en) | 1984-11-19 |
| DD154049A1 (de) | 1982-02-17 |
| JPS57103353A (en) | 1982-06-26 |
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