CN86102164B - 增加有效面积的光电池 - Google Patents
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Abstract
一个改进的大面积光电器件(90)包含许多电连接的较小面积电池(92)。每个较小面积电池有一个横向安置的汇流条(80)并以部分重迭的关系排列起来,因此,某电池的汇流条处在部分覆盖它的相邻电池衬底的下面。所得到的大面积器件的表面没有哪部分被汇流条所遮盖,从而使生产光电功率的有效面积为最大。
Description
现在,能够用辉光放电或汽相沉积的方法制备大面积复盖并具有良好电特性的薄膜非晶硅(或锗)的合金。非晶硅合金能够在高容量、连续处理的设备中多层地沉积在大面积的衬底上,从而制成太阳能电池。已公开了这样的连续处理设备,例如:美国专利4,400,409所介绍的制造P型掺杂硅薄膜的方法及由此而制作的器件,以及美国专利4,410,588所介绍的非晶态太阳能电池的连续沉积和绝缘系统与方法。照这些专利中所公开的,衬底可能要连续地通过一系列的沉积室,在每个沉积室中沉积一种专门的半导体材料。在制作P-i-n类型结构的太阳能电池时,一个小室用来沉积P型非晶硅合金,第二个小室用来沉极本征非晶硅合金,而第三个小室则用于沉积n型非晶硅合金。
我们希望用较小面积的电池构成大面积的组件。所得组件的表面面积可以做得非常大,以产生大功率。用互相串联和/或并联连接的电池装配成组件,这组件的电压和电流特性可以容易地选择来使它的输出功率适合于专门的应用。我们可以仅仅选择效率较高的电池装配成组件,从而可以使组件的效率最高。
大面积光电池需要一个电流收集系统,通常称之为汇流条格栅(bus-grid)系统,用来收集光电流并将这电流传送到收集点上,如象该器件的终端。汇流条格栅系统一般是由诸如金属条或者导电油墨或导电涂料那样的高导电材料以某种图形构成的。用于构成汇流条格栅系统的各种材料是不透光的,因而遮住了处于它下面的那部分光电池的光。由于遮光造成的损耗降低了组件的性能。
在单晶半导体光电组件中,刚性的半导体晶片如同瓦片那样部分重迭起来,从而盖住了汇流条,从而防止了遮光。见Myer发表的美国专利3,369,939和Baron发表的美国专利3,459,597。在本发明中,在大面积软性非晶态半导体组件中,减少了汇流条格栅结构的遮光作用,从而改善了组件的性能。汇流条的遮光作用是借助于软性非晶态半导体电池的瓦片状连接来消除的。相邻的电池在电气上互相串联是容易做到的,因为非晶态薄膜的横向电阻防止了电池因互连而引起的短路。
按照本发明的大面积光电组件包含许多电气上互相连接的较小面积的光电池。每个较小面积的电池有一块衬底,它至少包含一个导电的底面电极区,在衬底上有一块光敏半导体,与底面电极区电连接,在半导体块上还至少有一个透明的顶部电极条。每个较小面积的电池包含一个分布在靠近端头的导电的汇流条,用来将较小面积电池产生的电流传送到收集点去。较小面积的光电池象瓦片那样部分重迭地排列,因此,为了把电池互相连接成为组件,至少把一个电池的汇流条放在相邻电池的衬底下面。为此,汇流条不安置在接收光的表面,因此大面积光电组件的整个表面对于产生电功率而言都是有效的。汇流条可以卷绕在较小面积的电池上,既与衬底接触又与顶部电极接触,并且由通过半导体块的焊点固定就位。半导体块高的横向电阻避免了电池的短路。较小面积的电池可以用铜带进一步连接起来,该铜带被连接到相邻小面积电池的汇流条和底面电极或顶部电极上。串联的电连接也可以用导电粘合剂将一个较小电池的汇流条粘附到复盖在上面的相邻电池的导电衬底上的办法来实现。
图1是本发明使用的一个串联光电器件的局部横截面视图。
图2是多个小室沉积装置的示意图,这些小室可以用来制备图1所示的串联光电池。
图3是大面积光电组件现有技术的顶视图。
图4A描绘了小面积光电池,它可以按照本发明组合成一个大面积的组件。
图4B描绘了另一个小面积光电池,它可以按照本发明组合成一个大面积的组件。
图5A是按照本发明的大面积组件实施例的顶视图。
图5B是图5A光电组件的横截面图。
图5C是图5A光电组件的部分横截面图,示出了较小面积电池的电连接。
图1示出一个如象由单独的n-i-p型电池12a、12b和12c组成的太阳能电池这样的n-i-p型光电器件。在最下面电池12a的下面是衬底11,它由刚性或软性的透明玻璃或人造聚合物制成;或者由象不锈钢、铝、钽、钼、铬这样的金属材料制成;或者由绝缘体内嵌入金属颗粒制成。
电池12a、12b和12c的每一个最好由包含硅或者硅:锗合金的薄膜半导体块制成。每个半导体块包括一个n型的导电半导体层20a、20b和20c;一个本征半导体层18a、18b和18c,以及一个p型导电半导体层16a、16b和16c。如图所示,电池12b是个中间电池,如图1所表示的,还可以附加另外的中间电池。同样,串接的电池也可以只包含两个电池。
透明导电氧化物(TCO)层22最好由铟锡氧化物构成,它被附加于电池12c的P层/6c上作为电池10的顶部电极。电极格栅24被放置在涂层22上,用来有效地收集光产生的电流。
在图2中,为连续生产半导体电池的多个小室辉光放电沉积设备26包含许多被隔离的专用沉积室。每个小室通过气体门42被互连到另一个小室,净化气体和衬底材料11的薄条定向地通过42。正是在这种类型的装置中,类似于图1电池10那样的光电池能被迅速地制造出来。
在每个沉积室28、30和32中,用辉光放电将单层半导体层沉积到导电衬底11上。每个沉积室包括阴极34,环绕阴极的屏蔽罩35,生产气体馈送导管36,电磁能源38,生产气体和等离子体排气管41,许多横向延伸的磁性元件50,许多热辐射元件40和本征半导体沉积室到每个相邻的掺杂沉积室的互连的气体门42。
馈送导管36将生产气体混合物送到每个沉积室的阴极34和衬底11之间形成的等离子区去。阴极屏蔽罩35将生产气体限制在阴极区内。
功率发生器38通过分解反应气体形成等离子体转化为沉积产物。这些产物作为半导体层沉积在磁性衬底11的表面,该衬底借助于磁性元件50保持大体平直。
在图3中,现有技术的大面积光电器件或组件60包含许多较小面积光电池62a、62b和62c。每个电池62包含一个汇流条格栅图形64,它具有许多在电气上与电池顶部电极相通的收集电流的格栅66。格栅66将收集的光电电流传送到锥形的汇流条68去。锥形的形状使得汇流条的载流能力随着位置而增加,从而容纳逐渐增大的电流量。
电池62a、62b和62c在电气上是靠互连线70串联连接的。电流由引线72和74从组件60取出,第一端引线72连到光电池62a的衬底上,第二端引线74连到光电池62c的汇流条68c上。
汇流条68遮盖了组件60的不少面积。在图4A中,画出了小面积光电池76中的汇流条格栅图形78。汇流条格栅图形78包含一个汇流条80,它电气上被连到许多指状格栅82。指状格栅82由电镀的金属制成,所以具有很好的导电性,因而可以比较窄。汇流条80可以用同样的电镀处理来制成,尽管我们发现贴上一条导电的金属带如铜带横跨在指状格栅82上是特别方便的。汇流条格栅图形78也可以用诸如溅散或蒸发之类真空沉积处理来制成,或者用化学镀技术和网板印刷技术来制成,这些技术是人们所熟知的。
在图4B中,画出了小面积光电池83的汇流条格栅图形84。汇流条格栅图形84包含一个汇流条86,它电气上被连到许多格栅图形88上。格栅图形88是用丝网印制法将导电胶印到光电池的顶部电极上制成的。导电胶与电镀的或真空沉积的金属层相比导电性较差。因此,格栅图形88包含许多指状格栅88a,它与中央集电引线88b电连通,后者又与汇流条86电连通。汇流条86也可以用丝网印制导电胶的方法制成,也可以是与格栅图形88电连通的铜带。
图5A显示了按照本发明的大面积光电器件90的顶视图。大面积光电组件90包括较小面积光电池92a、92b、92c和92d,通常每个都类似于图4A的较小面积电池76。所有的较小面积电池92a-92d中,只有电池92d的汇流条80d是可以看见的。其他电池的汇流条被放置在相邻电池的底下。例如,电池92a的汇流条被放置在电池92b衬底的下面。这种配置在器件90的横截面视图图5B中被进一步地说明。图5B示出,每个软性电池92a-92d分别包含一个衬底11a-11d和汇流条80a-80d。
光电器件90包含许多电气上的互连条94,以建立相邻较小面积电池92a-92d之间电气上的串联连接。铜带94形成了一个电池的汇流条和相邻电池的衬底电极之间的电接触。这种互连的实施例在图5C中以横截面的方式展示出来,该图是由图5A在大面积器件90的边缘处沿着Vc-Vc线取的。在图5A中,电池92a和92b分别包含导电的衬底11a和11b,非晶态的半导体块96和顶部电极层22a和22b,它最好是透明的导电的氧化物层。电池92a包含一个互连条94a,它最好由象铜箔那样的导电金属薄片制成,由贯穿互连条94a的焊接点98固定到透明导电氧化物电极22a上。也可同样用导电的环氧树脂或类似的导电粘合剂将互连条94a固定到透明导电氧化物层22a上。在这个实施例中,汇流条80a由薄铜片制成,搭接在互连条94a上,它卷绕在电池92b的边缘上并搭接在电池92b的顶部表面上。一个或多个定位焊接头100通过汇流条80a的搭接部分,通过整个小面积电池92b,进入汇流条80a的下部及互连条94a。以这种方式实现了相邻电池92a和92b之间的电连接。电池92a的TCO电极22a电连接到相邻电池92b衬底的底部电极11b上。尽管定位焊接点100通过整个电池92b,也不会发生短路,这是因为用以制成半导体块96的非晶硅合金具有高的横向电阻。电流将优先地从汇流条80a通过焊点100流到衬底11b。实现到光电池92a衬底电极的电接触,是依靠定位焊接把一个终端接触条102通过那个电池连到衬底电极11a去。
各个电池互连的其他方法可以是用隐藏的汇流条的方法。例如,所有接触可以做在大面积光电池的背面。第一个电池的汇流条可以用导电粘合剂、钎焊或焊接互连条等方法固定于相邻电池的背面电极。在另一种实施例中,互连条,例如图5C中的94a可以被包在相邻小面积电池的顶面,然后,定位焊接通到下面的汇流条去。本发明可以用许多类型的光电池来实施,例如硫化镉电池和铜铟联硒化物电池。
Claims (6)
1、一个改进的大面积非晶态半导体光电组件(90),包含许多电连接的较小面积光电池(92),每个所述的较小面积电池包含一个软性的导电衬底(11),一个安置在所述衬底上光敏非晶态半导体块(96)和一个安置在所述半导体块上的透明导电层(22),一个安置在靠近所述较小面积电池边缘处、在所述透明涂层上面的的导电的汇流条(80),所述的较小面积电池(92a、92b)以部分重迭的关系放置、因此至少一个电池(92b)的汇流条被放置得与相邻电池(92a)的衬底构成电接触,从而实现串联的电连接,其特征在于,所述的汇流条(80a)包在所述小面积电池(92b)的边缘,在电气上及机械上与所述的透明涂层(22b)和所述的衬底(11b)相接触;所述的汇流条(80a)与非晶态半导体块(96)接触,后者安置在至少一个所述电池的衬底(11b)和透明涂层(22b)之间。
2、根据权利要求1的光电组件,其特征在于,所述的汇流条(80a)由至少一个焊点(100)焊到所述的较小面积电池(92b)上,焊点(100)穿过至少一个所述电池的衬底(11b)、半导体块(96)和所述的透明涂层(22b)。
3、根据权利要求1、或2中任何一项权利要求的光电组件,其特征在于,一个导电的互连条(94a)被安置的所述相邻较小面积电池(92a)的透明涂层(22a)上,与所述的汇流条(80a)在机械上和电气上保持接触。
4、根据权利要求2的光电组件,其特征在于,导电的互连条(94a)被放置在所述相邻小面积电池(92a)的透明涂层(22a)上,在所述的汇流条(80a)与所述的透明涂层(22a)之间,保持机械上的接触,同时,所述的焊点(100)通过所述的互连条。
5、根据权利要求3的光电器件,其特征在于,所述的互连条(94a)是一个金属薄片。
6、根据权利要求4的光电器件,其特征在于,所述的互连条(94a)是一个金属薄片。
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US06/718,970 US4617421A (en) | 1985-04-01 | 1985-04-01 | Photovoltaic cell having increased active area and method for producing same |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009143690A1 (zh) * | 2008-05-28 | 2009-12-03 | 安泰科技股份有限公司 | 薄膜太阳能电池组件拼接组装方法和设备及由其生产的产品 |
Families Citing this family (139)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3700792C2 (de) * | 1987-01-13 | 1996-08-22 | Hoegl Helmut | Photovoltaische Solarzellenanordnung und Verfahren zu ihrer Herstellung |
DE3708548A1 (de) * | 1987-03-17 | 1988-09-29 | Telefunken Electronic Gmbh | Solarzellenmodul mit parallel und seriell angeordneten solarzellen |
US5280133A (en) * | 1991-12-13 | 1994-01-18 | United Solar Systems Corporation | Junction box for a solar panel |
US5338369A (en) * | 1993-02-16 | 1994-08-16 | Rawlings Lyle K | Roof-integratable photovolatic modules |
US7732243B2 (en) * | 1995-05-15 | 2010-06-08 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US20080314433A1 (en) * | 1995-05-15 | 2008-12-25 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8222513B2 (en) | 2006-04-13 | 2012-07-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture |
US20090107538A1 (en) * | 2007-10-29 | 2009-04-30 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8664030B2 (en) | 1999-03-30 | 2014-03-04 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US7507903B2 (en) | 1999-03-30 | 2009-03-24 | Daniel Luch | Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8138413B2 (en) | 2006-04-13 | 2012-03-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20080011350A1 (en) * | 1999-03-30 | 2008-01-17 | Daniel Luch | Collector grid, electrode structures and interconnect structures for photovoltaic arrays and other optoelectric devices |
US6239352B1 (en) * | 1999-03-30 | 2001-05-29 | Daniel Luch | Substrate and collector grid structures for electrically interconnecting photovoltaic arrays and process of manufacture of such arrays |
US20100108118A1 (en) * | 2008-06-02 | 2010-05-06 | Daniel Luch | Photovoltaic power farm structure and installation |
US20090111206A1 (en) | 1999-03-30 | 2009-04-30 | Daniel Luch | Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture |
US8076568B2 (en) | 2006-04-13 | 2011-12-13 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US20090293941A1 (en) * | 2008-06-02 | 2009-12-03 | Daniel Luch | Photovoltaic power farm structure and installation |
US7635810B2 (en) * | 1999-03-30 | 2009-12-22 | Daniel Luch | Substrate and collector grid structures for integrated photovoltaic arrays and process of manufacture of such arrays |
US7898053B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US7898054B2 (en) | 2000-02-04 | 2011-03-01 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
US8198696B2 (en) | 2000-02-04 | 2012-06-12 | Daniel Luch | Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays |
EP1270411A1 (en) | 2001-06-28 | 2003-01-02 | Dutch Space B.V. | Solar panel with corrugated thin film solar cells |
JP3861154B2 (ja) * | 2003-09-04 | 2006-12-20 | 国立大学法人名古屋大学 | 発電方法及び電池 |
US8334451B2 (en) * | 2003-10-03 | 2012-12-18 | Ixys Corporation | Discrete and integrated photo voltaic solar cells |
US20050133081A1 (en) * | 2003-11-25 | 2005-06-23 | Ixys Corporation | Photo voltaic solar cells integrated with mosfet |
US20060012331A1 (en) * | 2004-04-21 | 2006-01-19 | Gillette William J Ii | Storage case with power and charging system |
EP1598874A1 (en) * | 2004-05-19 | 2005-11-23 | Dutch Space B.V. | Solar cell assembly |
US7781672B2 (en) * | 2004-06-01 | 2010-08-24 | Konarka Technologies, Inc. | Photovoltaic module architecture |
US8455753B2 (en) * | 2005-01-14 | 2013-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Solar cell and semiconductor device, and manufacturing method thereof |
US8729385B2 (en) | 2006-04-13 | 2014-05-20 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9865758B2 (en) | 2006-04-13 | 2018-01-09 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9006563B2 (en) | 2006-04-13 | 2015-04-14 | Solannex, Inc. | Collector grid and interconnect structures for photovoltaic arrays and modules |
US9236512B2 (en) | 2006-04-13 | 2016-01-12 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8822810B2 (en) | 2006-04-13 | 2014-09-02 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US8884155B2 (en) | 2006-04-13 | 2014-11-11 | Daniel Luch | Collector grid and interconnect structures for photovoltaic arrays and modules |
US7812247B2 (en) * | 2006-10-23 | 2010-10-12 | Ascent Solar Technologies Inc. | Flexible photovoltaic array with integrated wiring and control circuitry, and associated methods |
CN101226968A (zh) * | 2007-01-17 | 2008-07-23 | 易斌宣 | 降低聚光太阳能电池串联电阻阻值的方法及由该方法获得的聚光太阳能电池 |
CN101355108B (zh) * | 2007-07-26 | 2011-09-28 | 鸿富锦精密工业(深圳)有限公司 | 太阳能电池结构 |
US8748727B2 (en) | 2008-01-18 | 2014-06-10 | Tenksolar, Inc. | Flat-plate photovoltaic module |
US8933320B2 (en) | 2008-01-18 | 2015-01-13 | Tenksolar, Inc. | Redundant electrical architecture for photovoltaic modules |
US8212139B2 (en) | 2008-01-18 | 2012-07-03 | Tenksolar, Inc. | Thin-film photovoltaic module |
US20090223554A1 (en) * | 2008-03-05 | 2009-09-10 | Emcore Corporation | Dual Sided Photovoltaic Package |
KR101244027B1 (ko) * | 2008-07-08 | 2013-03-14 | 시너스 테크놀리지, 인코포레이티드 | 플렉서블 태양전지 제조방법 |
DE102010016975A1 (de) * | 2009-05-18 | 2011-01-05 | Solarion Ag | Anordnung und Verschaltung, sowie Verfahren zur Verschaltung von flächenartigen Solarzellen |
IN2012DN00387A (zh) | 2009-06-15 | 2015-08-21 | Tenksolar Inc | |
US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US8759664B2 (en) * | 2009-12-28 | 2014-06-24 | Hanergy Hi-Tech Power (Hk) Limited | Thin film solar cell strings |
US9773933B2 (en) | 2010-02-23 | 2017-09-26 | Tenksolar, Inc. | Space and energy efficient photovoltaic array |
US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
US9299861B2 (en) | 2010-06-15 | 2016-03-29 | Tenksolar, Inc. | Cell-to-grid redundandt photovoltaic system |
WO2012021650A2 (en) | 2010-08-10 | 2012-02-16 | Tenksolar, Inc. | Highly efficient solar arrays |
EP2614532B1 (en) * | 2010-09-07 | 2015-08-05 | Dow Global Technologies LLC | Improved photovoltaic cell assembly |
US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
JP5385890B2 (ja) * | 2010-12-22 | 2014-01-08 | 東レエンジニアリング株式会社 | 太陽電池モジュール及びその製造方法 |
US20130112239A1 (en) * | 2011-04-14 | 2013-05-09 | Cool Earh Solar | Solar energy receiver |
JP5675476B2 (ja) * | 2011-04-18 | 2015-02-25 | 株式会社カネカ | 結晶シリコン系太陽電池 |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
US20130206201A1 (en) * | 2012-02-10 | 2013-08-15 | Tsmc Solar Ltd. | Solar cell with low profile potting box |
WO2013140615A1 (ja) * | 2012-03-23 | 2013-09-26 | 三洋電機株式会社 | 太陽電池 |
US9385254B2 (en) | 2012-04-17 | 2016-07-05 | Hanergy Hi-Tech Power (Hk) Limited | Integrated thin film solar cell interconnection |
JP2012160768A (ja) * | 2012-05-29 | 2012-08-23 | Sanyo Electric Co Ltd | 太陽電池セル |
US9461189B2 (en) | 2012-10-04 | 2016-10-04 | Solarcity Corporation | Photovoltaic devices with electroplated metal grids |
US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
US20140124014A1 (en) | 2012-11-08 | 2014-05-08 | Cogenra Solar, Inc. | High efficiency configuration for solar cell string |
USD933584S1 (en) | 2012-11-08 | 2021-10-19 | Sunpower Corporation | Solar panel |
USD1009775S1 (en) | 2014-10-15 | 2024-01-02 | Maxeon Solar Pte. Ltd. | Solar panel |
US9947820B2 (en) | 2014-05-27 | 2018-04-17 | Sunpower Corporation | Shingled solar cell panel employing hidden taps |
US9780253B2 (en) | 2014-05-27 | 2017-10-03 | Sunpower Corporation | Shingled solar cell module |
US10090430B2 (en) | 2014-05-27 | 2018-10-02 | Sunpower Corporation | System for manufacturing a shingled solar cell module |
CN103840024B (zh) * | 2012-11-23 | 2018-03-13 | 北京创昱科技有限公司 | 一种互联式柔性太阳能电池及其制作方法 |
DE102012024754A1 (de) * | 2012-12-18 | 2014-06-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Dünnschichtsolarzellenanordnung sowie Verfahren zu deren Herstellung |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
WO2014110520A1 (en) | 2013-01-11 | 2014-07-17 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
US9362433B2 (en) | 2013-01-28 | 2016-06-07 | Hanergy Hi-Tech Power (Hk) Limited | Photovoltaic interconnect systems, devices, and methods |
US9525097B2 (en) * | 2013-03-15 | 2016-12-20 | Nthdegree Technologies Worldwide Inc. | Photovoltaic module having printed PV cells connected in series by printed conductors |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
US20140352773A1 (en) * | 2013-05-31 | 2014-12-04 | Neo Solar Power Corp. | Solar cell |
CN104241442B (zh) * | 2013-06-21 | 2017-06-16 | 米尔鲍尔有限两合公司 | 用于制造太阳能电池模组链的方法及设备以及包括柔性太阳能电池的太阳能电池模组链 |
DE102013010447A1 (de) * | 2013-06-21 | 2014-12-24 | Mühlbauer Ag | Verfahren und Vorrichtung zur Herstellung eines Solarmodulstrangs und ein Solarmodulstrang mit flexiblen Solarzellen |
US9601651B2 (en) | 2013-06-21 | 2017-03-21 | Muehlbauer GmbH & Co. KG | Method and apparatus for manufacturing a solar module strand and a solar module strand of flexible solar cells |
US9437756B2 (en) | 2013-09-27 | 2016-09-06 | Sunpower Corporation | Metallization of solar cells using metal foils |
US9178104B2 (en) | 2013-12-20 | 2015-11-03 | Sunpower Corporation | Single-step metal bond and contact formation for solar cells |
US9653638B2 (en) | 2013-12-20 | 2017-05-16 | Sunpower Corporation | Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region |
US9947812B2 (en) | 2014-03-28 | 2018-04-17 | Sunpower Corporation | Metallization of solar cells |
US9231129B2 (en) | 2014-03-28 | 2016-01-05 | Sunpower Corporation | Foil-based metallization of solar cells |
CN108091703B (zh) * | 2014-05-27 | 2021-04-09 | 迈可晟太阳能有限公司 | 叠盖式太阳能电池模块 |
US11942561B2 (en) | 2014-05-27 | 2024-03-26 | Maxeon Solar Pte. Ltd. | Shingled solar cell module |
US11482639B2 (en) | 2014-05-27 | 2022-10-25 | Sunpower Corporation | Shingled solar cell module |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
USD999723S1 (en) | 2014-10-15 | 2023-09-26 | Sunpower Corporation | Solar panel |
USD933585S1 (en) | 2014-10-15 | 2021-10-19 | Sunpower Corporation | Solar panel |
USD896747S1 (en) | 2014-10-15 | 2020-09-22 | Sunpower Corporation | Solar panel |
USD913210S1 (en) | 2014-10-15 | 2021-03-16 | Sunpower Corporation | Solar panel |
KR101637713B1 (ko) * | 2014-10-31 | 2016-07-20 | 현대자동차주식회사 | 차량의 태양전지 루프패널 |
US9899546B2 (en) | 2014-12-05 | 2018-02-20 | Tesla, Inc. | Photovoltaic cells with electrodes adapted to house conductive paste |
JP2015057863A (ja) * | 2014-12-12 | 2015-03-26 | 三洋電機株式会社 | 太陽電池セル |
US9620661B2 (en) | 2014-12-19 | 2017-04-11 | Sunpower Corporation | Laser beam shaping for foil-based metallization of solar cells |
US9947822B2 (en) | 2015-02-02 | 2018-04-17 | Tesla, Inc. | Bifacial photovoltaic module using heterojunction solar cells |
US10861999B2 (en) | 2015-04-21 | 2020-12-08 | Sunpower Corporation | Shingled solar cell module comprising hidden tap interconnects |
US20160380127A1 (en) | 2015-06-26 | 2016-12-29 | Richard Hamilton SEWELL | Leave-In Etch Mask for Foil-Based Metallization of Solar Cells |
CN106663706B (zh) | 2015-08-18 | 2019-10-08 | 太阳能公司 | 太阳能面板 |
US9711671B2 (en) * | 2015-09-18 | 2017-07-18 | Alta Devices, Inc. | Via structures for solar cell interconnection in solar module |
US9761744B2 (en) | 2015-10-22 | 2017-09-12 | Tesla, Inc. | System and method for manufacturing photovoltaic structures with a metal seed layer |
US9620655B1 (en) | 2015-10-29 | 2017-04-11 | Sunpower Corporation | Laser foil trim approaches for foil-based metallization for solar cells |
US9842956B2 (en) | 2015-12-21 | 2017-12-12 | Tesla, Inc. | System and method for mass-production of high-efficiency photovoltaic structures |
US9496429B1 (en) | 2015-12-30 | 2016-11-15 | Solarcity Corporation | System and method for tin plating metal electrodes |
US11424373B2 (en) | 2016-04-01 | 2022-08-23 | Sunpower Corporation | Thermocompression bonding approaches for foil-based metallization of non-metal surfaces of solar cells |
US10115838B2 (en) | 2016-04-19 | 2018-10-30 | Tesla, Inc. | Photovoltaic structures with interlocking busbars |
US10290763B2 (en) | 2016-05-13 | 2019-05-14 | Sunpower Corporation | Roll-to-roll metallization of solar cells |
US10673379B2 (en) | 2016-06-08 | 2020-06-02 | Sunpower Corporation | Systems and methods for reworking shingled solar cell modules |
US9882071B2 (en) | 2016-07-01 | 2018-01-30 | Sunpower Corporation | Laser techniques for foil-based metallization of solar cells |
US10115855B2 (en) | 2016-09-30 | 2018-10-30 | Sunpower Corporation | Conductive foil based metallization of solar cells |
CN106816479A (zh) * | 2016-12-27 | 2017-06-09 | 中国电子科技集团公司第十八研究所 | 一种适用于临近空间超长航时飞行器的柔性太阳电池阵 |
US11908958B2 (en) | 2016-12-30 | 2024-02-20 | Maxeon Solar Pte. Ltd. | Metallization structures for solar cells |
CN110277458A (zh) | 2017-03-09 | 2019-09-24 | 伟创力有限公司 | 叠瓦式阵列太阳能电池及制造包括叠瓦式阵列太阳能电池的太阳能组件的方法 |
USD841571S1 (en) | 2017-08-25 | 2019-02-26 | Flex Ltd. | Solar panel |
USD841570S1 (en) | 2017-08-25 | 2019-02-26 | Flex Ltd | Solar cell |
CN106920854B (zh) * | 2017-04-20 | 2018-07-31 | 泰州中来光电科技有限公司 | 一种密集排布的太阳能电池串和制备方法及其组件、系统 |
US10672919B2 (en) | 2017-09-19 | 2020-06-02 | Tesla, Inc. | Moisture-resistant solar cells for solar roof tiles |
KR102398002B1 (ko) | 2017-09-25 | 2022-05-13 | 엘지전자 주식회사 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
USD837142S1 (en) | 2017-10-16 | 2019-01-01 | Flex Ltd. | Solar module |
USD856919S1 (en) | 2017-10-16 | 2019-08-20 | Flex Ltd. | Solar module |
USD838667S1 (en) | 2017-10-16 | 2019-01-22 | Flex Ltd. | Busbar-less solar cell |
USD855016S1 (en) | 2017-10-24 | 2019-07-30 | Flex Ltd. | Solar cell |
USD855017S1 (en) | 2017-10-24 | 2019-07-30 | Flex Ltd. | Solar cell |
USD839180S1 (en) | 2017-10-31 | 2019-01-29 | Flex Ltd. | Busbar-less solar cell |
USD839181S1 (en) | 2017-11-01 | 2019-01-29 | Flex Ltd. | Solar cell |
US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
KR20200130495A (ko) | 2018-04-06 | 2020-11-18 | 선파워 코포레이션 | 태양 전지 스트링잉을 위한 레이저 보조 금속화 공정 |
CN112119508A (zh) | 2018-04-06 | 2020-12-22 | 太阳能公司 | 用于太阳能电池串接的激光辅助金属化工艺 |
US11646387B2 (en) | 2018-04-06 | 2023-05-09 | Maxeon Solar Pte. Ltd. | Laser assisted metallization process for solar cell circuit formation |
WO2019195803A1 (en) | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Laser assisted metallization process for solar cell fabrication |
WO2019195806A2 (en) | 2018-04-06 | 2019-10-10 | Sunpower Corporation | Local patterning and metallization of semiconductor structures using a laser beam |
CN109065656A (zh) * | 2018-10-31 | 2018-12-21 | 伟创力有限公司 | 形成用于集成在太阳能电池组件中的有色导电焊带的方法 |
US20210143290A1 (en) * | 2019-11-13 | 2021-05-13 | Sunpower Corporation | Hybrid dense solar cells and interconnects for solar modules and related methods of manufacture |
US20230144536A1 (en) * | 2020-03-31 | 2023-05-11 | Korea Institute Of Industrial Technology | Designable shingled photovoltaic module and manufacturing method therefor |
CN113725306B (zh) | 2021-08-27 | 2023-08-15 | 上海晶科绿能企业管理有限公司 | 一种电池片以及太阳能电池组件 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3369939A (en) * | 1962-10-23 | 1968-02-20 | Hughes Aircraft Co | Photovoltaic generator |
US3459597A (en) * | 1966-02-04 | 1969-08-05 | Trw Inc | Solar cells with flexible overlapping bifurcated connector |
JPS5679476A (en) * | 1979-12-04 | 1981-06-30 | Fuji Electric Co Ltd | Solar battery |
US4419530A (en) * | 1982-02-11 | 1983-12-06 | Energy Conversion Devices, Inc. | Solar cell and method for producing same |
-
1985
- 1985-04-01 US US06/718,970 patent/US4617421A/en not_active Expired - Lifetime
-
1986
- 1986-03-31 BR BR8601423A patent/BR8601423A/pt unknown
- 1986-03-31 CN CN86102164A patent/CN86102164B/zh not_active Expired
- 1986-03-31 ES ES553531A patent/ES8800513A1/es not_active Expired
- 1986-03-31 JP JP61074117A patent/JPH0744287B2/ja not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009143690A1 (zh) * | 2008-05-28 | 2009-12-03 | 安泰科技股份有限公司 | 薄膜太阳能电池组件拼接组装方法和设备及由其生产的产品 |
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ES553531A0 (es) | 1987-10-16 |
JPH0744287B2 (ja) | 1995-05-15 |
BR8601423A (pt) | 1986-12-09 |
JPS61231774A (ja) | 1986-10-16 |
CN86102164A (zh) | 1987-01-14 |
ES8800513A1 (es) | 1987-10-16 |
US4617421A (en) | 1986-10-14 |
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