CN2929969Y - Lateral light emitting diode device - Google Patents

Lateral light emitting diode device Download PDF

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Publication number
CN2929969Y
CN2929969Y CNU2006201210099U CN200620121009U CN2929969Y CN 2929969 Y CN2929969 Y CN 2929969Y CN U2006201210099 U CNU2006201210099 U CN U2006201210099U CN 200620121009 U CN200620121009 U CN 200620121009U CN 2929969 Y CN2929969 Y CN 2929969Y
Authority
CN
China
Prior art keywords
circuit
substrate
tin
circuit substrate
luminous diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNU2006201210099U
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Chinese (zh)
Inventor
庄世任
徐志宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Everlight Electronics China Co Ltd
Original Assignee
Everlight Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to CNU2006201210099U priority Critical patent/CN2929969Y/en
Application granted granted Critical
Publication of CN2929969Y publication Critical patent/CN2929969Y/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

The utility model relates to a traversing luminescent diode device, comprising a circuit substrate. Two separate circuit areas are etched on the front of the substrate. The inferior two sides of the substrate and the left and right bottom surface connected with the two sides are respectively formed a solder side depressing some certain height and connected electrically with the two circuit areas. The luminescent chip is fixed to one of the circuit areas and uses two metal electrode lines to lead to the two circuit areas from the electrode leader of the luminescent chip. The front of the substrate is arranged with a reflection part whose inner surface sputtered with a high reflectivity metal layer. The luminescent diode device utilizes the two solder sides to adhere the preinstall tin point of the circuit board. The surface tension penetrating the tin gel makes the tin gel fill in the clearance, which is the preserved between the solder side and the circuit board. And the luminescent diode device is welded on the circuit board firmly.

Description

Lateral luminous diode apparatus
Technical field
The utility model relates to a kind of lateral luminous diode apparatus, can be adhered to the lateral luminous diode apparatus on the circuit board when particularly relating to a kind of the welding securely.
Background technology
The principle of luminosity of light-emitting diode is to utilize the semiconductor inherent characteristic, electric current is forward flowed into semi-conductive PN connect face, and it is emitted beam, so LED is called as cold light source (coldlight); And because of LED has high-durability, the life-span is long, volume is little, power consumption is low, and do not contain advantages such as harmful substance such as mercury, so can be widely used in electronic product and the lighting apparatus industry.
The structure of at present existing lateral luminous diode, see also shown in Figure 1, it is provided with a circuit substrate 10, the front-side etch of substrate 10 goes out biseptate circuit region 11, two corners, below of substrate 10 are the circular hole on the ifq circuit substrate, forming two circular arcs according to this eats tin district 12, two circuit regions 11 and eats 12 electric connections of tin district with two respectively; One luminescent wafer 13 is fixedly arranged on wherein on the circuit region 11, and two contact conductors that use two metal electrode lines, 14 self-luminous wafers 13 are to two circuit regions 11, makes two electrodes and two of luminescent wafer 13 eat tin district 12 and electrically connects; The front of circuit substrate 10 is equipped with a framework 15, goes out from positive emitted transverse in order to the light of guiding luminescent wafer 13.
When installing and using, can utilize surface adhering mode (SMT), eat on the default tin point that tin district 12 is adhered to a circuit board (not shown) two, by luminescent wafer 13, make luminescent wafer 13 discharge luminous energy by the electric current of circuit board.But, shortcoming such as it eats tin district 12 for circular-arc existing lateral luminous diode, makes the up whole tin district 12 that eats of filling of scolding tin, causes adhesion area narrow and small, and it is insecure adhere, and cause this to have lateral luminous diode now on circuit board, coming off easily.
This shows that above-mentioned existing lateral luminous diode obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem that lateral luminous diode exists, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of lateral luminous diode apparatus of new structure, just becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing lateral luminous diode exists, the design people is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of lateral luminous diode apparatus of new structure, can improve general existing lateral luminous diode, make it have more practicality.Through constantly research, design, and, dig finally and set out the utility model that has practical value through after studying sample and improvement repeatedly.
Summary of the invention
Main purpose of the present utility model is, overcome the defective that existing lateral luminous diode exists, and a kind of lateral luminous diode apparatus of new structure is provided, technical problem to be solved is that it is welded on the circuit board securely, thereby is suitable for practicality more.
The purpose of this utility model and to solve its technical problem be to adopt following technical scheme to realize.According to a kind of lateral luminous diode apparatus that the utility model proposes, it comprises: a circuit substrate, its front-side etch goes out biseptate circuit region, and the two sides, below of this substrate and the bottom surface, the left and right sides that links to each other with this two side faces respectively are formed with the tin face of eating, and electrically connect with this two circuit region respectively, this two eats the tin face certain height that respectively caves inward, but in order to and a circuit board between form the gap of a filling scolding tin; One luminescent wafer is fixedly arranged on the wherein circuit region of this circuit substrate, and with two metal electrode lines respectively from two contact conductors of this luminescent wafer to this two circuit region, two electrodes that make this luminescent wafer two are eaten the tin face and are electrically connected with this respectively; And a reflecting element, being installed on the front of this circuit substrate, this reflecting element inner surface sputter has a high-reflectivity metal layer, in order to light harvesting and guide the light of this luminescent wafer to go out from the positive emitted transverse of this circuit substrate.
The purpose of this utility model and solve its technical problem and can also be able to be further achieved by the following technical measures.
Aforesaid lateral luminous diode apparatus, wherein said high-reflectivity metal layer are zinc, aluminium, silver or golden.
Aforesaid lateral luminous diode apparatus, wherein said reflecting element can see through an epoxy film or solid is bonded on the front of this circuit substrate.
The utility model compared with prior art has tangible advantage and beneficial effect.Via as can be known above, to achieve the above object, the lateral luminous diode apparatus of the utility model includes a circuit substrate, the front-side etch of substrate goes out biseptate circuit region, and the two sides, below of substrate and the bottom surface, the left and right sides that links to each other with this two side faces respectively are formed with the tin face of eating, this two eats the tin face certain height that respectively caves inward, and electrically connects with this two circuit region respectively; Luminescent wafer is fixedly arranged on the wherein circuit region of circuit substrate, and respectively two contact conductors of self-luminous wafer are to two circuit regions with two metal electrode lines, and two electrodes that make luminescent wafer are eaten the tin face and electrically connected with two respectively; The front of circuit substrate is equipped with a reflecting element, and reflecting element inner surface sputter has the high-reflectivity metal layer, in order to light harvesting and guide the light of luminescent wafer to go out from the positive emitted transverse of circuit substrate.
By technique scheme, the lateral luminous diode apparatus of the utility model has following advantage at least:
The lateral luminous diode of the utility model is when installing and using, can utilize surface adhering mode (SMT), eat on the default tin point that the tin face is adhered to a circuit board two, ask the gap of reservation by eating tin face and circuit board, order sees through the surface tension of tin cream, but make tin cream filling crack during the period, and can be welded on the circuit board difficult drop-off securely.
In sum, the utlity model has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on apparatus structure or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing lateral luminous diode has the effect of enhancement, thus be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solutions of the utility model, for can clearer understanding technological means of the present utility model, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present utility model can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the exploded perspective view that illustrates existing a kind of lateral luminous diode.
Fig. 2 is the stereoscopic figure that illustrates the lateral luminous diode apparatus of the utility model.
Fig. 3 is the exploded perspective view that illustrates the lateral luminous diode apparatus of the utility model.
Fig. 4 is the user mode figure that illustrates the lateral luminous diode apparatus of the utility model.
10: circuit substrate
11: circuit region
12: eat Xi Qu
13: luminescent wafer
14: metal electrode lines
15: framework
20: circuit substrate
21: circuit region
22: eat the tin face
23: metal electrode lines
30: luminescent wafer
40: reflecting element
41: the high-reflectivity metal layer
50: epoxy film
60: circuit board
G: gap
Embodiment
For further setting forth the utility model is to reach technological means and the effect that predetermined goal of the invention is taked, below in conjunction with accompanying drawing and preferred embodiment, to according to its embodiment of lateral luminous diode apparatus, structure, feature and the effect thereof that the utility model proposes, describe in detail as after.
Fig. 2,3 illustrates the stereoscopic figure and the exploded perspective view of lateral luminous diode apparatus one preferred embodiment of the utility model respectively.Shown in Fig. 2,3, the lateral luminous diode apparatus of the utility model includes a circuit substrate 20, and the front-side etch of substrate 20 goes out biseptate circuit region 21; And the two sides, below of substrate 20 and the bottom surface, the left and right sides that links to each other with this two side faces respectively are formed with eats tin face 22, two and eats tin face 22 certain height that caves inward, and respectively with 21 electric connections of two circuit regions.One luminescent wafer 30 is fixedly arranged on the wherein circuit region 21 of circuit substrate 20, and two contact conductors of self-luminous wafers 30 are to two circuit regions 21 respectively with two metal electrode lines 23, and two electrodes that make luminescent wafer 30 are eaten tin face 22 and electrically connected with two respectively.The front of circuit substrate 20 is equipped with a shaped as frame reflecting element 40, reflecting element 40 inner surface sputters have a high-reflectivity metal layer 41 (as: metal levels such as zinc, aluminium, silver or gold), so that preferable reflectivity to be provided, go out (the light lateral type sends) from the positive emitted transverse of circuit substrate in order to light harvesting and the light that guides luminescent wafer 30.Reflecting element 40 can see through epoxy film 50 or solid is bonded on the front of circuit substrate 20.
Please refer to shown in Figure 4, the lateral luminous diode of the utility model is when installing and using, can utilize surface adhering mode (SMT), eat on the default tin point that tin face 22 is adhered to a circuit board 60 two, by the clearance G of eating tin face 22 and 60 reservations of circuit board, order sees through the surface tension of tin cream, but makes tin cream filling crack G during the period, and the utility model light-emitting diode assembly can be welded on the circuit board 60 securely difficult drop-off.
Moreover circuit substrate 30 sides are eaten tin face 22 and are mainly two right angle ends about the circuit substrate lower edge, coat birectangular straight horizontal two sides and be the via on the ifq circuit substrate, and the conducting hole wall is existing to be electroplated, and after cutting, promptly forms the being seen tin face 22 of eating.Therefore, eat 60 of tin face 22 and circuit boards and can keep certain interval G (as shown in Figure 4), see through the surface tension of tin cream, but make tin cream filling crack G during the period, and light-emitting diode assembly can be welded on the circuit board 60 securely, make the light-emitting diode assembly energy edge-on on general circuit plate 60, form and send the lateral sources that side is penetrated.
The above, it only is preferred embodiment of the present utility model, be not that the utility model is done any pro forma restriction, though the utility model discloses as above with preferred embodiment, yet be not in order to limit the utility model, any those skilled in the art are not in breaking away from the technical solutions of the utility model scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solutions of the utility model, according to technical spirit of the present utility model to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solutions of the utility model.

Claims (3)

1, a kind of lateral luminous diode apparatus is characterized in that comprising:
One circuit substrate, its front-side etch goes out biseptate circuit region, and the two sides, below of this substrate and the bottom surface, the left and right sides that links to each other with this two side faces respectively are formed with the tin face of eating, and electrically connect with this two circuit region respectively, this two eats the tin face certain height that respectively caves inward, but in order to and a circuit board between form the gap of a filling scolding tin;
One luminescent wafer is fixedly arranged on the wherein circuit region of this circuit substrate, and with two metal electrode lines respectively from two contact conductors of this luminescent wafer to this two circuit region, two electrodes that make this luminescent wafer two are eaten the tin face and are electrically connected with this respectively; And
One reflecting element is installed on the front of this circuit substrate, and this reflecting element inner surface sputter has a high-reflectivity metal layer, in order to light harvesting and guide the light of this luminescent wafer to go out from the positive emitted transverse of this circuit substrate.
2, lateral luminous diode apparatus according to claim 1 is characterized in that wherein said high-reflectivity metal layer is zinc, aluminium, silver or golden.
3, lateral luminous diode apparatus according to claim 1 is characterized in that wherein said reflecting element can see through an epoxy film or solid is bonded on the front of this circuit substrate.
CNU2006201210099U 2006-06-27 2006-06-27 Lateral light emitting diode device Expired - Fee Related CN2929969Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU2006201210099U CN2929969Y (en) 2006-06-27 2006-06-27 Lateral light emitting diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU2006201210099U CN2929969Y (en) 2006-06-27 2006-06-27 Lateral light emitting diode device

Publications (1)

Publication Number Publication Date
CN2929969Y true CN2929969Y (en) 2007-08-01

Family

ID=38308341

Family Applications (1)

Application Number Title Priority Date Filing Date
CNU2006201210099U Expired - Fee Related CN2929969Y (en) 2006-06-27 2006-06-27 Lateral light emitting diode device

Country Status (1)

Country Link
CN (1) CN2929969Y (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807639A (en) * 2017-04-28 2018-11-13 日亚化学工业株式会社 Light-emitting device
JP2022180523A (en) * 2017-08-25 2022-12-06 ローム株式会社 Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807639A (en) * 2017-04-28 2018-11-13 日亚化学工业株式会社 Light-emitting device
CN108807639B (en) * 2017-04-28 2024-03-08 日亚化学工业株式会社 Light emitting device
JP2022180523A (en) * 2017-08-25 2022-12-06 ローム株式会社 Semiconductor device
JP7349544B2 (en) 2017-08-25 2023-09-22 ローム株式会社 semiconductor equipment

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: EVERLIGHT ELECTRONICS( SUZHOU) CO., LTD.

Free format text: FORMER OWNER: EVERLIGHT ELECTRONICS INDUSTRIAL STOCK CO., LTD.

Effective date: 20091225

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20091225

Address after: No. 2135, West Zone, Wujiang Economic Development Zone, Jiangsu, Zhongshan North Road, China: 212000

Patentee after: Billion Optoelectronics (Suzhou) Co., Ltd.

Address before: 25, Lane 76, three middle road, Tu Cheng Road, Taipei County, Taiwan, china:

Patentee before: Everlight Electronics Co.,Ltd.

C56 Change in the name or address of the patentee

Owner name: YIGUANG ELECTRONICS (CHINA) CO., LTD.

Free format text: FORMER NAME: YIGUANG ELECTRONICS (SUZHOU) CO., LTD.

CP03 Change of name, title or address

Address after: Wujiang City, Jiangsu province 215000 Songling Town Economic Development Zone No. 2135 Zhongshan North Road west division operation

Patentee after: Everlight Electronics (China) Co.,Ltd.

Address before: 212000, Jiangsu, Wujiang Economic Development Zone, West 2135, Zhongshan North Road

Patentee before: Everlight Electronics (Suzhou) Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070801

Termination date: 20150627

EXPY Termination of patent right or utility model