JP2006086178A - Resin-sealed optical semiconductor device - Google Patents

Resin-sealed optical semiconductor device Download PDF

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JP2006086178A
JP2006086178A JP2004266625A JP2004266625A JP2006086178A JP 2006086178 A JP2006086178 A JP 2006086178A JP 2004266625 A JP2004266625 A JP 2004266625A JP 2004266625 A JP2004266625 A JP 2004266625A JP 2006086178 A JP2006086178 A JP 2006086178A
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resin
optical semiconductor
lead electrode
lead
semiconductor device
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Tetsuo Sakaki
哲雄 榊
Iwao Matsumoto
岩夫 松本
Masaki Adachi
正樹 安達
Takayuki Azumi
孝行 安住
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Toshiba Corp
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Toshiba Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To obtain a resin-sealed optical semiconductor device improving a resin peeling due to a thermal strain. <P>SOLUTION: A pair of lead electrodes 2 are buried to a molding member 1 having a cup as an air gap and being composed of a thermosetting resin. The cup is formed in an inverted truncated cone using lead-electrode surface 2 as bases. An optical semiconductor element 5 is fixed onto one lead-electrode surface 2 positioned at the center of the cup through paste 4. The optical semiconductor element 5 and the other lead electrode 2 are connected electrically by a bonding by a metallic small-gage wire 6. The cup is filled with an epoxy resin 3. The outer peripheries of sites molded by a molding member in the lead electrodes 2 are formed at an obtuse angle or in a curved shape. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、樹脂封止型光半導体装置に関し、特に可視光・赤外光・紫外光・白色などの表面実装に対し適した樹脂封止型光半導体装置に関するものである。   The present invention relates to a resin-sealed optical semiconductor device, and more particularly to a resin-sealed optical semiconductor device suitable for surface mounting such as visible light, infrared light, ultraviolet light, and white.

近年、光半導体装置の要求は、表面実装を用いた実装構造が多く、製品に対する要求もパッケージの小型化・薄化・高実装密度など多岐に亘っている。   In recent years, optical semiconductor devices have many mounting structures using surface mounting, and products have various requirements such as downsizing, thinning, and high mounting density of packages.

環境に配慮した鉛フリー化の動きも加速しており、実装温度も例えば約２４０℃から約２６０℃以上へと実装条件も変わるため、さらなる高信頼性の光半導体装置が要求されている。   Environmentally friendly lead-free movement is also accelerating, and the mounting temperature also changes from, for example, about 240 ° C. to about 260 ° C. or higher. Therefore, an optical semiconductor device with higher reliability is required.

一般的な樹脂封止型光半導体装置としては、図６乃至図８に示すものがある（例えば、特許文献１参照。）。図６は樹脂封止型光半導体装置の斜視図、図７はその上面図、図８は略断面図である。空隙部分であるカップ部を有した熱硬化性樹脂から成るモールド部材１に一対のリード電極２が埋め込まれている。カップ部はリード電極面2を底面とした逆円錐台となっている。カップ部の中央に位置する一方のリード電極面２上に、ペースト４を介して光半導体素子５が固着されている。光半導体素子５ともう一方のリード電極２は、金属細線６でボンディングによって電気的に接続されている。カップ部には、エポキシ樹脂３が充填されている。   Examples of typical resin-encapsulated optical semiconductor devices include those shown in FIGS. 6 to 8 (see, for example, Patent Document 1). 6 is a perspective view of the resin-encapsulated optical semiconductor device, FIG. 7 is a top view thereof, and FIG. 8 is a schematic cross-sectional view. A pair of lead electrodes 2 is embedded in a mold member 1 made of a thermosetting resin having a cup portion that is a gap portion. The cup portion is an inverted truncated cone having the lead electrode surface 2 as a bottom surface. On one lead electrode surface 2 located at the center of the cup portion, an optical semiconductor element 5 is fixed via a paste 4. The optical semiconductor element 5 and the other lead electrode 2 are electrically connected with a metal thin wire 6 by bonding. The cup portion is filled with an epoxy resin 3.

リフロー（フロー）などにより光半導体装置を実装する場合、光半導体装置の周囲温度が例えば260℃レベルまで上昇する。   When the optical semiconductor device is mounted by reflow (flow) or the like, the ambient temperature of the optical semiconductor device rises to a level of 260 ° C., for example.

線膨張係数の大きさを対比すると、エポキシ樹脂＞熱可塑性樹脂＞リード電極となっており、エポキシ樹脂とリード電極間の係数が異なっている。熱可塑性樹脂とリード電極及びエポキシ樹脂とリード電極面は、物理結合状態にあり、リード電極と熱可塑性樹脂間及びリード電極とエポキシ樹脂間で、実装時の熱ひずみにより剥離が発生するという問題があった。   Comparing the magnitude of the linear expansion coefficient, it is epoxy resin> thermoplastic resin> lead electrode, and the coefficient between the epoxy resin and the lead electrode is different. The thermoplastic resin and the lead electrode, and the epoxy resin and the lead electrode surface are in a physically bonded state, and there is a problem that peeling occurs between the lead electrode and the thermoplastic resin and between the lead electrode and the epoxy resin due to thermal strain during mounting. there were.

光半導体装置の実装前に吸湿などの要因がある場合、さらに剥離が進行し、最終的には電気的な導通が阻害され、結果的には、不点灯に至ることがあった。
特開平８−２８８４２８号公報 When there is a factor such as moisture absorption before the optical semiconductor device is mounted, the peeling further proceeds, and finally electrical conduction is hindered, resulting in non-lighting.
JP-A-8-288428

本発明の目的は、熱ひずみによる樹脂剥がれを改善する樹脂封止型光半導体発光装置を提供することにある。   An object of the present invention is to provide a resin-encapsulated optical semiconductor light-emitting device that improves resin peeling due to thermal strain.

本願発明の一態様によれば、カップ部が形成されたモールド部材でリード電極がモールドされ、前記カップ部内部に配置した光半導体素子が前記リード電極上に固着され、前記光半導体素子の電極と前記リード電極とを金属細線で電気的に接続させた樹脂封止型光半導体装置であって、前記カップ部は熱硬化性樹脂で充填されるとともに、前記リード電極の前記モールド部材にモールドされた部位は、その外周縁が鈍角または曲線形状に形成されていることを特徴とする樹脂封止型光半導体装置が提供される。   According to one aspect of the present invention, a lead electrode is molded with a molding member in which a cup portion is formed, an optical semiconductor element disposed inside the cup portion is fixed on the lead electrode, and the electrode of the optical semiconductor element A resin-encapsulated optical semiconductor device in which the lead electrode is electrically connected with a thin metal wire, wherein the cup portion is filled with a thermosetting resin and molded into the mold member of the lead electrode. The part is provided with a resin-encapsulated optical semiconductor device characterized in that an outer peripheral edge thereof is formed in an obtuse angle or a curved shape.

また、本願発明の別の一態様によれば、光半導体素子の固着箇所から前記リード電極２の先端部分にかけて、前記リード電極に凹状の段差を形成したことを特徴とする樹脂封止型光半導体装置が提供される。   According to another aspect of the present invention, a resin-encapsulated optical semiconductor is characterized in that a concave step is formed in the lead electrode from a fixed portion of the optical semiconductor element to a tip portion of the lead electrode 2. An apparatus is provided.

本発明によれば、熱ひずみによる樹脂剥がれを改善した樹脂封止型半導体発光装置が提供される。   ADVANTAGE OF THE INVENTION According to this invention, the resin-sealed semiconductor light-emitting device which improved the resin peeling by heat strain is provided.

本発明者は、熱ひずみ等による樹脂剥れについて種々の実験の結果、リード電極の形状を工夫することにより、信頼性が著しく向上し得ることを見出し、本発明を成すに至ったものである。   As a result of various experiments regarding resin peeling due to thermal strain or the like, the present inventor has found that reliability can be remarkably improved by devising the shape of the lead electrode, and has led to the present invention. .

本発明者は、リード電極と熱硬化性樹脂（例えば、エポキシ樹脂）の剥離は、リード電極の直角部あるいは鋭角部分を起点として発生している場合が多いことを見出した。   The present inventor has found that peeling between a lead electrode and a thermosetting resin (for example, epoxy resin) often occurs starting from a right angle portion or an acute angle portion of the lead electrode.

すなわち、形状の急激な変化する部位では、リフローの際、アンバランスな熱応力が発生し、そのため熱ひずみ等による樹脂剥れを引き起こすのである。   That is, an unbalanced thermal stress is generated at a portion where the shape changes suddenly during reflow, which causes resin peeling due to thermal strain or the like.

そこで、本発明の実施の形態は、リード電極の直角部あるいは鋭角部分をできるだけ削減することにある。   Therefore, an embodiment of the present invention is to reduce the right angle portion or the acute angle portion of the lead electrode as much as possible.

以下、本発明の実施の形態について、図面を参照しながら説明する。尚、各図において同一箇所については同一の符号を付すとともに、重複した説明は省略する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same portions are denoted by the same reference numerals, and redundant description is omitted.

図１は本発明の実施の形態に係る樹脂封止型半導体発光装置の断面図である。図１において、空隙部分であるカップ部１ａを有した熱可塑性樹脂から成るモールド部材１に一対のリード電極２が埋め込まれている。カップ部１ａはリード電極面2を底面とした逆円錐台となっている。カップ部１ａの中央に位置する一方のリード電極面２上に、ペースト４を介して光半導体素子５が固着されている。光半導体素子５ともう一方のリード電極２は、金属細線６でボンディングによって電気的に接続されている。カップ部１ａには、エポキシ樹脂３が充填されている。   FIG. 1 is a cross-sectional view of a resin-encapsulated semiconductor light emitting device according to an embodiment of the present invention. In FIG. 1, a pair of lead electrodes 2 is embedded in a mold member 1 made of a thermoplastic resin having a cup portion 1a which is a gap. The cup portion 1a is an inverted truncated cone having the lead electrode surface 2 as a bottom surface. An optical semiconductor element 5 is fixed on one lead electrode surface 2 located in the center of the cup portion 1a through a paste 4. The optical semiconductor element 5 and the other lead electrode 2 are electrically connected with a metal thin wire 6 by bonding. The cup portion 1a is filled with an epoxy resin 3.

ここで、光半導体素子５は、種々の半導体材料を用いて構成することができる。光半導体素子として発光素子などを形成させるためには、例えばＣＶＤ法、ＭＢＥ法などの方法を用いて形成させることができる。半導体材料としてはＳｉ、Ｇｅを材料としたものの他、各種化合物を好適に利用することができる。また、光半導体素子として発光素子を利用する場合、発光素子の基板も導電材料や絶縁材料など種々の材料を利用することができる。
光半導体素子の構造もショットキー接合、ＰＩＮ接合やｐｎ接合を利用したホモ構造、ヘテロ構造、ダブルへテロ構造などとすることができる。また、発光効率を向上させるなどの理由により、単一量子井戸構造や多重量子井戸構造とすることができる。
発光素子の材料としては、光の三原色に対応する青色や緑色は比較的短波長であるためバンドギャップの大きい材料を利用することが好ましい。このような材料としては窒化物半導体が挙げられる。また、赤色にはガリウム燐、ガリウムヒ素、ガリウム燐ヒ素、インジウム・ガリウム・燐、アルミニウム・インジム・ガリウム燐などを発光層に用いたものが挙げられる。
リード電極２は、外部電源などと光半導体素子５を電気的に接続させるために用いられる。電気伝導性がよくモールド部材１との密着性に優れた金属材料などを好適に利用することができる。例えば、鉄、銅、アルミニウムなどの金属、鉄入り銅、ステンレスなどの合金やこれらに、金、銀、白金など種々の金属をメッキさせたものが好適に挙げられる。 Here, the optical semiconductor element 5 can be configured using various semiconductor materials. In order to form a light emitting element or the like as the optical semiconductor element, it can be formed by using a method such as a CVD method or an MBE method. As the semiconductor material, various compounds can be suitably used in addition to those made of Si and Ge. When a light emitting element is used as the optical semiconductor element, various materials such as a conductive material and an insulating material can be used for the substrate of the light emitting element.
The structure of the optical semiconductor element can also be a homostructure, a heterostructure, a double heterostructure using a Schottky junction, a PIN junction, or a pn junction. In addition, a single quantum well structure or a multiple quantum well structure can be formed for reasons such as improving luminous efficiency.
As a material of the light emitting element, it is preferable to use a material having a large band gap because blue and green corresponding to the three primary colors of light have a relatively short wavelength. An example of such a material is a nitride semiconductor. Examples of red include gallium phosphide, gallium arsenide, gallium phosphide, indium / gallium / phosphorus, aluminum / indium / gallium phosphide, and the like for the light emitting layer.
The lead electrode 2 is used for electrically connecting an optical power source and the like to the optical semiconductor element 5. A metal material having good electrical conductivity and excellent adhesion to the mold member 1 can be suitably used. For example, metals such as iron, copper, and aluminum, alloys such as iron-containing copper and stainless steel, and those obtained by plating various metals such as gold, silver, and platinum on them are preferable.

本発明の実施の形態にあっては、リード電極２のモールド部材にモールドされた部位は、その外周縁が鈍角または曲線形状に形成されている。 さらに、ペースト４部分から一方のリード電極２の先端部分にかけて段差、すなわち凹部が形成されている。さらに、リード電極２に孔が形成してある。   In the embodiment of the present invention, the portion of the lead electrode 2 molded on the molding member has an outer peripheral edge formed in an obtuse angle or a curved shape. Further, a step, that is, a concave portion is formed from the paste 4 portion to the tip portion of one lead electrode 2. Furthermore, a hole is formed in the lead electrode 2.

このようなリード電極２の加工は、平板を打ち抜き加工あるいは押し圧などによって形成させることができる。   Such processing of the lead electrode 2 can be performed by punching or pressing a flat plate.

モールド部材１は、光半導体素子５、金属細線６などを外部環境からの外力、塵芥や水分などから保護するために用いられる。モールド部材１の形状を種々に変えることによって発光素子から放出される光や受光素子が受光する光の指向特性を種々選択することができる。即ち、モールド部材１の形状を凸レンズ形状、凹レンズ形状とすることによってレンズ効果をもたすことができる。そのため、所望に応じて、砲弾型、発光観測面側から見て楕円状、立方体、三角柱など種々の形状を選択することができる。   The mold member 1 is used to protect the optical semiconductor element 5, the fine metal wire 6, and the like from external force, dust, moisture, and the like from the external environment. By changing the shape of the mold member 1 in various ways, various directivity characteristics of light emitted from the light emitting element and light received by the light receiving element can be selected. That is, the lens effect can be achieved by making the shape of the mold member 1 a convex lens shape or a concave lens shape. Therefore, various shapes such as a bullet shape, an elliptical shape as viewed from the light emission observation surface side, a cube, and a triangular prism can be selected as desired.

光半導体素子用の具体的モールド部材としては、耐光性、透光性に優れたアクリル樹脂、イミド樹脂などの有機物質や硝子など無機物質を選択することができる。また、モールド部材１に発光素子からの光を拡散させる目的で酸化アルミニウム、酸化バリウム、チタン酸バリウム、酸化珪素などを含有させることもできる。同様に外来光や発光素子からの不要な波長をカットするフィルター効果を持たすために各種着色剤を添加させることもできる。さらに、発光素子からの発光波長によって励起され蛍光を発する蛍光物質を含有させる。   As a specific mold member for an optical semiconductor element, an organic substance such as an acrylic resin or an imide resin excellent in light resistance and translucency, or an inorganic substance such as glass can be selected. The mold member 1 can also contain aluminum oxide, barium oxide, barium titanate, silicon oxide, or the like for the purpose of diffusing light from the light emitting element. Similarly, various colorants can be added in order to have a filter effect of cutting unnecessary wavelengths from extraneous light and light emitting elements. Further, a fluorescent material that emits fluorescence when excited by the emission wavelength from the light emitting element is contained.

金属細線６は、光半導体素子５とリード電極２とを電気的に接続させるためのものであり、電気導電性がよいこと及びリード電極２や光半導体素子５の電極との密着性がよいことが好ましい。電気伝導性や密着性の観点から金線などを利用する場合がある。この場合、コストやワイヤボンディングの自由度を高めるために太くさせすぎることができない。通常、ワイヤの径は２０μｍから５０μｍ程度が好適に選択される。より好ましくは、２５μｍから３５μｍが選択される。ワイヤの具体的材料としては、金の他、銀、銅、アルミニウムやこれらの合金を好適に利用することができる。   The thin metal wire 6 is for electrically connecting the optical semiconductor element 5 and the lead electrode 2 and has good electrical conductivity and good adhesion to the lead electrode 2 and the electrode of the optical semiconductor element 5. Is preferred. A gold wire may be used from the viewpoint of electrical conductivity and adhesion. In this case, it cannot be made too thick in order to increase the cost and the degree of freedom of wire bonding. Usually, the diameter of the wire is preferably selected from about 20 μm to 50 μm. More preferably, 25 μm to 35 μm is selected. As a specific material of the wire, silver, copper, aluminum, or an alloy thereof can be suitably used in addition to gold.

ペースト４としては、例えば銀ペーストが好適である。   As the paste 4, for example, a silver paste is suitable.

（実施例１）
図１に示すように、ペースト４部分から一方のリード電極２の先端部分にかけて段差、すなわち凹部を形成している。 Example 1
As shown in FIG. 1, a step, that is, a recess is formed from the paste 4 portion to the tip portion of one lead electrode 2.

実装時、各部品は熱で応力ひずみが発生し、リード電極と熱可塑性樹脂から成るモールド部材間の剥離が発生し易くなるが、かかる形状とすることにより、リード電極と熱可塑性樹脂から成るモールド部材の密着性が向上し熱ひずみによる剥離を抑制する効果が得られた。
（実施例２）
次に、第２の実施例について説明する。図２乃至図５に示すように、リード電極の先端面に限らず、外周縁が鈍角または曲線形状になるように形成したものである。そのため、角部分を面取りまたはＲをつけている。 During mounting, each component is stress-strained by heat, and peeling between the lead electrode and the mold member made of thermoplastic resin is likely to occur. By adopting this shape, the mold made of the lead electrode and thermoplastic resin The adhesion of the member was improved, and the effect of suppressing peeling due to thermal strain was obtained.
(Example 2)
Next, a second embodiment will be described. As shown in FIGS. 2 to 5, the outer peripheral edge of the lead electrode is formed so as to have an obtuse angle or a curved shape. Therefore, the corner is chamfered or rounded.

熱ひずみは、リード電極の「角」に集中する傾向にあるので、外周縁を鈍角または曲線形状に形成することにより、熱ひずみを分散化させるものである。   Since the thermal strain tends to concentrate on the “corner” of the lead electrode, the thermal strain is dispersed by forming the outer peripheral edge into an obtuse angle or a curved shape.

尚、この実施例は、実施例１と組み合わせることにより、相乗効果が得られる。   In addition, a synergistic effect is acquired by combining this Example with Example 1. FIG.

（実施例３）
次に、第３の実施例について説明する。図２乃至図５に示すように、リード電極上に円形の連なった孔や、コーナ部に丸みを持たせた矩形の孔を形成している。このような孔を形成することにより、リード電極とモールド部材及びエポキシ樹脂との接触面積を削減させ、熱ひずみの分散を拡大させる効果が得られる。 (Example 3)
Next, a third embodiment will be described. As shown in FIG. 2 to FIG. 5, circular continuous holes and rectangular holes with rounded corners are formed on the lead electrodes. By forming such a hole, the effect of reducing the contact area between the lead electrode, the mold member, and the epoxy resin and expanding the dispersion of thermal strain can be obtained.

尚、この実施例は、上記した第１の実施例、第２の実施例と組み合わせることにより、更なる相乗効果が得られる。   It should be noted that this embodiment provides a further synergistic effect when combined with the first embodiment and the second embodiment described above.

上述のようにリード電極を加工した樹脂封止型半導体発光素子を、常温から約３００℃レベルの高温環境下へ放置し観察した。   The resin-encapsulated semiconductor light-emitting element in which the lead electrode was processed as described above was left and observed in a high-temperature environment of about 300 ° C. from normal temperature.

その結果、熱ひずみに起因するリード電極と封止樹脂間の剥離開始温度のレベルが、従来製品と比較し、大幅に向上することができた。   As a result, the level of the peeling start temperature between the lead electrode and the sealing resin due to thermal strain was significantly improved as compared with the conventional product.

各部品の熱ひずみ量は変わらないが、熱ひずみの集中を防ぎ、熱ひずみの分散化を図ったことにより、実装時の熱ひずみ軽減が可能となった。   Although the amount of thermal strain of each component does not change, it is possible to reduce thermal strain during mounting by preventing concentration of thermal strain and by distributing thermal strain.

この結果、繰り返しリフロー、フローなどの破壊限界回数（光半導体装置の不点灯に至るまでの時間）の向上がはかれた。   As a result, the number of breakage limit times (time until the optical semiconductor device is not turned on) such as repeated reflow and flow was improved.

本発明は上記した実施の形態に限定されることなく、特許請求の範囲に記載した発明の範囲内で、種々の変形が可能であり、それらも本発明の範囲内に含まれるものであることはいうまでもない。   The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the invention described in the claims, and these are also included in the scope of the present invention. Needless to say.

本発明の実施の形態に係る樹脂封止型半導体発光装置の断面図である。1 is a cross-sectional view of a resin-encapsulated semiconductor light emitting device according to an embodiment of the present invention. 本発明の実施の形態に係る樹脂封止型半導体発光装置の上面図である。1 is a top view of a resin-encapsulated semiconductor light emitting device according to an embodiment of the present invention. 本発明の実施の形態に係る樹脂封止型半導体発光装置の上面図である。1 is a top view of a resin-encapsulated semiconductor light emitting device according to an embodiment of the present invention. 本発明の実施の形態に係る樹脂封止型半導体発光装置の上面図である。1 is a top view of a resin-encapsulated semiconductor light emitting device according to an embodiment of the present invention. 本発明の実施の形態に係る樹脂封止型半導体発光装置の上面図である。1 is a top view of a resin-encapsulated semiconductor light emitting device according to an embodiment of the present invention. 従来の樹脂封止型半導体発光装置の斜視図である。It is a perspective view of the conventional resin-encapsulated semiconductor light emitting device. 従来の樹脂封止型半導体発光装置の上面図である。It is a top view of the conventional resin-encapsulated semiconductor light emitting device. 従来の樹脂封止型半導体発光装置の略断面図である。It is a schematic sectional view of a conventional resin-encapsulated semiconductor light emitting device.

符号の説明Explanation of symbols

１：モールド部材、１ａ：カップ部 ２：リード電極、 ３：エポキシ樹脂、 ４：ペースト、 ５：光半導体素子、 ６：金属細線。  1: Mold member, 1a: Cup part 2: Lead electrode, 3: Epoxy resin, 4: Paste, 5: Optical semiconductor element, 6: Metal fine wire.

Claims (4)

カップ部が形成されたモールド部材でリード電極がモールドされ、前記カップ部内部に配置した光半導体素子が前記リード電極上に固着され、前記光半導体素子の電極と前記リード電極とを金属細線で電気的に接続させた樹脂封止型光半導体装置であって、前記カップ部は熱硬化性樹脂で充填されるとともに、前記リード電極の前記モールド部材にモールドされた部位は、その外周縁が鈍角または曲線形状に形成されていることを特徴とする樹脂封止型光半導体装置。   A lead electrode is molded by a molding member having a cup portion, an optical semiconductor element disposed inside the cup portion is fixed on the lead electrode, and the electrode of the optical semiconductor element and the lead electrode are electrically connected by a thin metal wire. And the cup portion is filled with a thermosetting resin, and the portion of the lead electrode molded on the mold member has an obtuse angle or an outer peripheral edge. A resin-encapsulated optical semiconductor device having a curved shape. 前記光半導体素子の固着箇所から前記リード電極２の先端部分にかけて、前記リード電極に凹状の段差を形成したことを特徴とする請求項１記載の樹脂封止型光半導体装置。   2. The resin-encapsulated optical semiconductor device according to claim 1, wherein a concave step is formed in the lead electrode from a fixed portion of the optical semiconductor element to a tip portion of the lead electrode. 前記リード電極に、熱硬化性樹脂及びモールド部材との接触面積を削減させるための複数の孔を形成したことを特徴とする請求項１記載の樹脂封止型光半導体装置。   2. The resin-encapsulated optical semiconductor device according to claim 1, wherein a plurality of holes for reducing a contact area between the thermosetting resin and the mold member are formed in the lead electrode. 前記カップ部内に充填される熱硬化性樹脂は、エポキシ樹脂であることを特徴とする請求項１乃至４のうちいずれか１項に記載の樹脂封止型光半導体装置。   5. The resin-encapsulated optical semiconductor device according to claim 1, wherein the thermosetting resin filled in the cup portion is an epoxy resin. 6.
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