JP2006086178A - Resin-sealed optical semiconductor device - Google Patents

Resin-sealed optical semiconductor device Download PDF

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JP2006086178A
JP2006086178A JP2004266625A JP2004266625A JP2006086178A JP 2006086178 A JP2006086178 A JP 2006086178A JP 2004266625 A JP2004266625 A JP 2004266625A JP 2004266625 A JP2004266625 A JP 2004266625A JP 2006086178 A JP2006086178 A JP 2006086178A
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resin
optical semiconductor
lead electrode
semiconductor device
lead
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Masaki Adachi
Takayuki Azumi
Iwao Matsumoto
Tetsuo Sakaki
孝行 安住
正樹 安達
岩夫 松本
哲雄 榊
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Toshiba Corp
株式会社東芝
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Abstract

PROBLEM TO BE SOLVED: To obtain a resin-sealed optical semiconductor device improving a resin peeling due to a thermal strain.
SOLUTION: A pair of lead electrodes 2 are buried to a molding member 1 having a cup as an air gap and being composed of a thermosetting resin. The cup is formed in an inverted truncated cone using lead-electrode surface 2 as bases. An optical semiconductor element 5 is fixed onto one lead-electrode surface 2 positioned at the center of the cup through paste 4. The optical semiconductor element 5 and the other lead electrode 2 are connected electrically by a bonding by a metallic small-gage wire 6. The cup is filled with an epoxy resin 3. The outer peripheries of sites molded by a molding member in the lead electrodes 2 are formed at an obtuse angle or in a curved shape.
COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、樹脂封止型光半導体装置に関し、特に可視光・赤外光・紫外光・白色などの表面実装に対し適した樹脂封止型光半導体装置に関するものである。 The present invention relates to a resin sealed optical semiconductor device, and more particularly to a resin sealed optical semiconductor device which is suitable to surface mount such as visible light, infrared light, ultraviolet light, white.

近年、光半導体装置の要求は、表面実装を用いた実装構造が多く、製品に対する要求もパッケージの小型化・薄化・高実装密度など多岐に亘っている。 Recently, the demand for an optical semiconductor device, the mounting structure using a surface mount many request also diversified downsizing, thinning and high packaging density of the package for the product.

環境に配慮した鉛フリー化の動きも加速しており、実装温度も例えば約240℃から約260℃以上へと実装条件も変わるため、さらなる高信頼性の光半導体装置が要求されている。 Movement of lead-free environmentally friendly has also accelerated, because the mounting temperature eg from about 240 ° C. to about 260 ° C. or higher also change the mounting conditions, higher reliability of the optical semiconductor device is required.

一般的な樹脂封止型光半導体装置としては、図6乃至図8に示すものがある(例えば、特許文献1参照。)。 Common resin sealed optical semiconductor device, there is shown in FIGS. 6 to 8 (for example, see Patent Document 1.). 図6は樹脂封止型光半導体装置の斜視図、図7はその上面図、図8は略断面図である。 Figure 6 is a perspective view of a resin sealing type optical semiconductor device, FIG. 7 is a top view thereof, FIG. 8 is a schematic cross-sectional view. 空隙部分であるカップ部を有した熱硬化性樹脂から成るモールド部材1に一対のリード電極2が埋め込まれている。 Mold member pair of lead electrodes 2 in 1 made of a thermosetting resin having a cup portion which is void portion is buried. カップ部はリード電極面2を底面とした逆円錐台となっている。 Cup portion has an inverted truncated cone in which the lead electrode surface 2 and bottom surface. カップ部の中央に位置する一方のリード電極面2上に、ペースト4を介して光半導体素子5が固着されている。 On one lead electrode surface 2 located in the center of the cup portion, the optical semiconductor element 5 is fixed via the paste 4. 光半導体素子5ともう一方のリード電極2は、金属細線6でボンディングによって電気的に接続されている。 An optical semiconductor element 5 Tomo one lead electrode 2 is electrically connected by bonding a metal wire 6. カップ部には、エポキシ樹脂3が充填されている。 The cup portion, epoxy resin 3 is filled.

リフロー(フロー)などにより光半導体装置を実装する場合、光半導体装置の周囲温度が例えば260℃レベルまで上昇する。 When implementing an optical semiconductor device by reflow (flow), rises to ambient temperature, for example 260 ° C. level of the optical semiconductor device.

線膨張係数の大きさを対比すると、エポキシ樹脂>熱可塑性樹脂>リード電極となっており、エポキシ樹脂とリード電極間の係数が異なっている。 When comparing the size of the linear expansion coefficient, it has a epoxy resin> The thermoplastic resin> lead electrodes, coefficient between the epoxy resin and the lead electrode are different. 熱可塑性樹脂とリード電極及びエポキシ樹脂とリード電極面は、物理結合状態にあり、リード電極と熱可塑性樹脂間及びリード電極とエポキシ樹脂間で、実装時の熱ひずみにより剥離が発生するという問題があった。 Thermoplastic resin and the lead electrode and the epoxy resin and the lead electrode surface is in physical bonding state, between between the lead electrodes and the thermoplastic resin and the lead electrode and the epoxy resin, a problem that thermal strain by peeling occurs at the time of mounting there were.

光半導体装置の実装前に吸湿などの要因がある場合、さらに剥離が進行し、最終的には電気的な導通が阻害され、結果的には、不点灯に至ることがあった。 If before mounting the optical semiconductor device there is a factor such as moisture absorption, further delamination proceeds, the final electrical conduction is inhibited to which will result in there may lead to non-lighting.
特開平8−288428号公報 JP-8-288428 discloses

本発明の目的は、熱ひずみによる樹脂剥がれを改善する樹脂封止型光半導体発光装置を提供することにある。 An object of the present invention is to provide a resin sealing type optical semiconductor light-emitting device to improve the peeling resin due to thermal strain.

本願発明の一態様によれば、カップ部が形成されたモールド部材でリード電極がモールドされ、前記カップ部内部に配置した光半導体素子が前記リード電極上に固着され、前記光半導体素子の電極と前記リード電極とを金属細線で電気的に接続させた樹脂封止型光半導体装置であって、前記カップ部は熱硬化性樹脂で充填されるとともに、前記リード電極の前記モールド部材にモールドされた部位は、その外周縁が鈍角または曲線形状に形成されていることを特徴とする樹脂封止型光半導体装置が提供される。 According to an aspect of the present invention, the lead electrode is molded with a mold member having a cup portion formed, the cup portion optical semiconductor element disposed therein is secured onto the lead electrode, and the electrode of the optical semiconductor element and said lead electrode a resin sealed optical semiconductor device with electrically connected by metal wires, the cup portion while being filled with a thermosetting resin, which is molded in the mold member of the lead electrode site, a resin encapsulating type optical semiconductor device is provided, wherein the outer peripheral edge thereof is formed at an obtuse angle or curved.

また、本願発明の別の一態様によれば、光半導体素子の固着箇所から前記リード電極2の先端部分にかけて、前記リード電極に凹状の段差を形成したことを特徴とする樹脂封止型光半導体装置が提供される。 Further, according to another aspect of the present invention, the light from the fixation point of the semiconductor element to the tip portion of the lead electrode 2, the resin sealing type optical semiconductor, characterized in that the formation of the concave step on the lead electrode apparatus is provided.

本発明によれば、熱ひずみによる樹脂剥がれを改善した樹脂封止型半導体発光装置が提供される。 According to the present invention, heat distortion resin-sealed semiconductor light emitting device with improved peeling resin due is provided.

本発明者は、熱ひずみ等による樹脂剥れについて種々の実験の結果、リード電極の形状を工夫することにより、信頼性が著しく向上し得ることを見出し、本発明を成すに至ったものである。 The present inventors, as a result of various experiments for Re resin peeling due to thermal strain or the like, by devising the shape of the lead electrode, found that the reliability can be remarkably improved, and that accomplished the present invention .

本発明者は、リード電極と熱硬化性樹脂(例えば、エポキシ樹脂)の剥離は、リード電極の直角部あるいは鋭角部分を起点として発生している場合が多いことを見出した。 The present inventors, the release of lead electrodes and the thermosetting resin (e.g., epoxy resin) have found that if you are generating a right portion or an acute angle portion of the lead electrode as a starting point is large.

すなわち、形状の急激な変化する部位では、リフローの際、アンバランスな熱応力が発生し、そのため熱ひずみ等による樹脂剥れを引き起こすのである。 That is, in the region of abrupt changes in shape, during reflow, unbalanced thermal stress is generated, it cause Re resin peeling due to this reason thermal strain or the like.

そこで、本発明の実施の形態は、リード電極の直角部あるいは鋭角部分をできるだけ削減することにある。 Accordingly, embodiments of the present invention is to reduce as much as possible a right angle portion or an acute angle portion of the lead electrode.

以下、本発明の実施の形態について、図面を参照しながら説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. 尚、各図において同一箇所については同一の符号を付すとともに、重複した説明は省略する。 Incidentally, with the same reference numerals are given to the same portions in the respective drawings, duplicate description is omitted.

図1は本発明の実施の形態に係る樹脂封止型半導体発光装置の断面図である。 Figure 1 is a cross-sectional view of a resin sealed semiconductor light-emitting device according to an embodiment of the present invention. 図1において、空隙部分であるカップ部1aを有した熱可塑性樹脂から成るモールド部材1に一対のリード電極2が埋め込まれている。 In Figure 1, a pair of lead electrodes 2 in the mold member 1 made of thermoplastic resin is embedded having a cup portion 1a is the gap portion. カップ部1aはリード電極面2を底面とした逆円錐台となっている。 Cup portion 1a has a inverted truncated cone in which the lead electrode surface 2 and bottom surface. カップ部1aの中央に位置する一方のリード電極面2上に、ペースト4を介して光半導体素子5が固着されている。 On one lead electrode surface 2 located in the center of the cup portion 1a, an optical semiconductor element 5 is fixed via the paste 4. 光半導体素子5ともう一方のリード電極2は、金属細線6でボンディングによって電気的に接続されている。 An optical semiconductor element 5 Tomo one lead electrode 2 is electrically connected by bonding a metal wire 6. カップ部1aには、エポキシ樹脂3が充填されている。 The cup portion 1a, the epoxy resin 3 is filled.

ここで、光半導体素子5は、種々の半導体材料を用いて構成することができる。 Here, the optical semiconductor element 5 can be constructed using various semiconductor materials. 光半導体素子として発光素子などを形成させるためには、例えばCVD法、MBE法などの方法を用いて形成させることができる。 To form a light-emitting element or the like as an optical semiconductor element, for example, a CVD method, can be formed by a method such as the MBE method. 半導体材料としてはSi、Geを材料としたものの他、各種化合物を好適に利用することができる。 The semiconductor material Si, although the Ge materials other, various compounds can be suitably used. また、光半導体素子として発光素子を利用する場合、発光素子の基板も導電材料や絶縁材料など種々の材料を利用することができる。 Also, when using a light-emitting element as an optical semiconductor device can utilize a variety of materials such as the substrate of the light emitting element is also electrically conductive material or an insulating material.
光半導体素子の構造もショットキー接合、PIN接合やpn接合を利用したホモ構造、ヘテロ構造、ダブルへテロ構造などとすることができる。 Structure of the optical semiconductor element is also a Schottky junction, it may be, eg heterostructure homo structure using a PIN junction or pn junction, a heterostructure, a double. また、発光効率を向上させるなどの理由により、単一量子井戸構造や多重量子井戸構造とすることができる。 Also, for reasons such as improving the luminous efficiency, it can be a single quantum well structure or a multiple quantum well structure.
発光素子の材料としては、光の三原色に対応する青色や緑色は比較的短波長であるためバンドギャップの大きい材料を利用することが好ましい。 The material of the light emitting element, blue and green corresponding to the three primary colors of light, it is preferable to use a material having a high band gap for a relatively short wavelength. このような材料としては窒化物半導体が挙げられる。 Such materials include nitride semiconductor. また、赤色にはガリウム燐、ガリウムヒ素、ガリウム燐ヒ素、インジウム・ガリウム・燐、アルミニウム・インジム・ガリウム燐などを発光層に用いたものが挙げられる。 Further, gallium phosphide is red, gallium arsenide, gallium phosphide arsenide, indium gallium phosphide, and a like aluminum Injimu gallium phosphide as that used for the light emitting layer.
リード電極2は、外部電源などと光半導体素子5を電気的に接続させるために用いられる。 Lead electrode 2 is used for electrically connecting an external power supply and the optical semiconductor element 5. 電気伝導性がよくモールド部材1との密着性に優れた金属材料などを好適に利用することができる。 Etc. can be suitably used a metal material having excellent adhesion to electric conductivity and good mold member 1. 例えば、鉄、銅、アルミニウムなどの金属、鉄入り銅、ステンレスなどの合金やこれらに、金、銀、白金など種々の金属をメッキさせたものが好適に挙げられる。 For example, iron, copper, metals such as aluminum, iron-containing copper, an alloy or these stainless steel, gold, silver, are preferably exemplified those obtained by plating various metals, such as platinum.

本発明の実施の形態にあっては、リード電極2のモールド部材にモールドされた部位は、その外周縁が鈍角または曲線形状に形成されている。 In the embodiment of the present invention, parts which are molded in the mold member of the lead electrode 2, the outer peripheral edge is formed at an obtuse angle or curved. さらに、ペースト4部分から一方のリード電極2の先端部分にかけて段差、すなわち凹部が形成されている。 Further, the step, or recess is formed toward one of a distal portion of the lead electrode 2 from the paste 4 portions. さらに、リード電極2に孔が形成してある。 Moreover, there is hole is formed in the lead electrode 2.

このようなリード電極2の加工は、平板を打ち抜き加工あるいは押し圧などによって形成させることができる。 Processing of such lead electrode 2 can be formed by a machining or pressing pressure punching a plate.

モールド部材1は、光半導体素子5、金属細線6などを外部環境からの外力、塵芥や水分などから保護するために用いられる。 The mold member 1, the optical semiconductor element 5, an external force such as a metal wire 6 from the external environment, is used to protect against such dust and moisture. モールド部材1の形状を種々に変えることによって発光素子から放出される光や受光素子が受光する光の指向特性を種々選択することができる。 Light and the light receiving element that is emitted from the light emitting element by changing the shape of the mold member 1 on various it can be variously selected directivity characteristics of the light received. 即ち、モールド部材1の形状を凸レンズ形状、凹レンズ形状とすることによってレンズ効果をもたすことができる。 That is, the shape of the mold member 1 convex lens shape can Motas the lens effect by a concave lens shape. そのため、所望に応じて、砲弾型、発光観測面側から見て楕円状、立方体、三角柱など種々の形状を選択することができる。 Therefore, if desired, shell-type, oval shape when viewed from the light emission observing surface side, cube, it is possible to select various shapes such as a triangular prism.

光半導体素子用の具体的モールド部材としては、耐光性、透光性に優れたアクリル樹脂、イミド樹脂などの有機物質や硝子など無機物質を選択することができる。 Specific mold member for optical semiconductor element can be selected light resistance, light transmitting excellent acrylic resin, an inorganic material such as organic material or glass, such as an imide resin. また、モールド部材1に発光素子からの光を拡散させる目的で酸化アルミニウム、酸化バリウム、チタン酸バリウム、酸化珪素などを含有させることもできる。 Further, object of aluminum oxide to diffuse light from the light emitting element in the mold member 1, barium oxide, barium titanate, also contain a silicon oxide or the like. 同様に外来光や発光素子からの不要な波長をカットするフィルター効果を持たすために各種着色剤を添加させることもできる。 Similarly it is also possible to add various colorants in order to Motas the filter effect to cut unnecessary wavelengths from external light and the light emitting element. さらに、発光素子からの発光波長によって励起され蛍光を発する蛍光物質を含有させる。 Furthermore, it is excited by the emission wavelength from the light emitting element to contain a fluorescent substance that emits fluorescence.

金属細線6は、光半導体素子5とリード電極2とを電気的に接続させるためのものであり、電気導電性がよいこと及びリード電極2や光半導体素子5の電極との密着性がよいことが好ましい。 Metal wire 6 is for electrically connecting the optical semiconductor element 5 and the lead electrode 2, adhesion between it good electrical conductivity and the lead electrodes 2 and the optical semiconductor element 5 electrode good It is preferred. 電気伝導性や密着性の観点から金線などを利用する場合がある。 It may utilize a like gold in terms of electrical conductivity and adhesion. この場合、コストやワイヤボンディングの自由度を高めるために太くさせすぎることができない。 In this case, it is impossible to excessively is thick in order to increase the flexibility of the cost and wire bonding. 通常、ワイヤの径は20μmから50μm程度が好適に選択される。 Normally, the diameter of the wire is approximately 50μm from 20μm is preferably selected. より好ましくは、25μmから35μmが選択される。 More preferably, 35 [mu] m is selected from 25 [mu] m. ワイヤの具体的材料としては、金の他、銀、銅、アルミニウムやこれらの合金を好適に利用することができる。 Specific materials for wires, other gold, silver, copper, can be suitably used aluminum or an alloy thereof.

ペースト4としては、例えば銀ペーストが好適である。 The paste 4, for example, silver paste is suitable.

(実施例1) (Example 1)
図1に示すように、ペースト4部分から一方のリード電極2の先端部分にかけて段差、すなわち凹部を形成している。 As shown in FIG. 1, it is formed stepped, i.e. the recesses toward one of a distal portion of the lead electrode 2 from the paste 4 portions.

実装時、各部品は熱で応力ひずみが発生し、リード電極と熱可塑性樹脂から成るモールド部材間の剥離が発生し易くなるが、かかる形状とすることにより、リード電極と熱可塑性樹脂から成るモールド部材の密着性が向上し熱ひずみによる剥離を抑制する効果が得られた。 During mounting, each part strain stress generates heat, but peeling between the mold member comprising a lead electrode and a thermoplastic resin is likely to occur, by adopting such a shape, consisting of lead electrodes and a thermoplastic resin molding the effect of suppressing the peeling due to the strain to improve the adhesion of the members heat is obtained.
(実施例2) (Example 2)
次に、第2の実施例について説明する。 Next, a second embodiment will be described. 図2乃至図5に示すように、リード電極の先端面に限らず、外周縁が鈍角または曲線形状になるように形成したものである。 As shown in FIGS. 2 to 5, not only the front end surface of the lead electrode, in which the outer peripheral edge is formed such that an obtuse angle or a curved shape. そのため、角部分を面取りまたはRをつけている。 For this reason, it has a corner portion with a chamfered or R.

熱ひずみは、リード電極の「角」に集中する傾向にあるので、外周縁を鈍角または曲線形状に形成することにより、熱ひずみを分散化させるものである。 Heat distortion, because it tends to concentrate on "corner" of the lead electrodes, by forming the outer peripheral edge at an obtuse angle or a curved shape, is intended to disperse the thermal strain.

尚、この実施例は、実施例1と組み合わせることにより、相乗効果が得られる。 In this embodiment, by combining the first embodiment, a synergistic effect is obtained.

(実施例3) (Example 3)
次に、第3の実施例について説明する。 Next, a third embodiment will be described. 図2乃至図5に示すように、リード電極上に円形の連なった孔や、コーナ部に丸みを持たせた矩形の孔を形成している。 As shown in FIGS. 2-5, are formed holes or with continuous circularity on the lead electrodes, a rectangular hole rounded the corner portion. このような孔を形成することにより、リード電極とモールド部材及びエポキシ樹脂との接触面積を削減させ、熱ひずみの分散を拡大させる効果が得られる。 By forming such a hole, to reduce the contact area between the lead electrode and the mold member and epoxy resins, the effect of enlarging the distribution of thermal strain can be obtained.

尚、この実施例は、上記した第1の実施例、第2の実施例と組み合わせることにより、更なる相乗効果が得られる。 In this embodiment, the first embodiment described above, by combining the second embodiment, a further synergistic effect is obtained.

上述のようにリード電極を加工した樹脂封止型半導体発光素子を、常温から約300℃レベルの高温環境下へ放置し観察した。 The resin-sealed semiconductor light emitting device obtained by processing the lead electrodes as described above, were allowed to stand from a normal temperature to a high temperature environment of about 300 ° C. level observed.

その結果、熱ひずみに起因するリード電極と封止樹脂間の剥離開始温度のレベルが、従来製品と比較し、大幅に向上することができた。 As a result, the level of the peeling starting temperature between the lead electrodes and the sealing resin due to thermal strain, as compared with conventional products, can be greatly improved.

各部品の熱ひずみ量は変わらないが、熱ひずみの集中を防ぎ、熱ひずみの分散化を図ったことにより、実装時の熱ひずみ軽減が可能となった。 Thermal distortion amount of each component is unchanged, preventing the concentration of thermal strain, by which attained decentralized heat strain has allowed the thermal strain relief in mounting.

この結果、繰り返しリフロー、フローなどの破壊限界回数(光半導体装置の不点灯に至るまでの時間)の向上がはかれた。 As a result, it repeated reflow, to improve the breakdown limit number of such flows (time until unlighted optical semiconductor device) was tomb.

本発明は上記した実施の形態に限定されることなく、特許請求の範囲に記載した発明の範囲内で、種々の変形が可能であり、それらも本発明の範囲内に含まれるものであることはいうまでもない。 The present invention is not limited to the embodiment described above, without departing from the spirit and scope of the invention described in the claims, but various modifications are possible which are also intended to be included within the scope of the present invention it is needless to say.

本発明の実施の形態に係る樹脂封止型半導体発光装置の断面図である。 It is a cross-sectional view of a resin sealed semiconductor light-emitting device according to an embodiment of the present invention. 本発明の実施の形態に係る樹脂封止型半導体発光装置の上面図である。 Is a top view of a resin sealed semiconductor light-emitting device according to an embodiment of the present invention. 本発明の実施の形態に係る樹脂封止型半導体発光装置の上面図である。 Is a top view of a resin sealed semiconductor light-emitting device according to an embodiment of the present invention. 本発明の実施の形態に係る樹脂封止型半導体発光装置の上面図である。 Is a top view of a resin sealed semiconductor light-emitting device according to an embodiment of the present invention. 本発明の実施の形態に係る樹脂封止型半導体発光装置の上面図である。 Is a top view of a resin sealed semiconductor light-emitting device according to an embodiment of the present invention. 従来の樹脂封止型半導体発光装置の斜視図である。 It is a perspective view of a conventional resin-sealed semiconductor light-emitting device. 従来の樹脂封止型半導体発光装置の上面図である。 It is a top view of a conventional resin-sealed semiconductor light-emitting device. 従来の樹脂封止型半導体発光装置の略断面図である。 It is a schematic sectional view of a conventional resin-sealed semiconductor light-emitting device.

符号の説明 DESCRIPTION OF SYMBOLS

1:モールド部材、1a:カップ部 2:リード電極、 3:エポキシ樹脂、 4:ペースト、 5:光半導体素子、 6:金属細線。 1: mold member, 1a: the cup portion 2: lead electrodes, 3: epoxy resin, 4: Paste, 5: optical semiconductor element, 6: fine metal wire.

Claims (4)

  1. カップ部が形成されたモールド部材でリード電極がモールドされ、前記カップ部内部に配置した光半導体素子が前記リード電極上に固着され、前記光半導体素子の電極と前記リード電極とを金属細線で電気的に接続させた樹脂封止型光半導体装置であって、前記カップ部は熱硬化性樹脂で充填されるとともに、前記リード電極の前記モールド部材にモールドされた部位は、その外周縁が鈍角または曲線形状に形成されていることを特徴とする樹脂封止型光半導体装置。 Lead electrode is molded with a mold member having a cup portion formed, the cup portion optical semiconductor element disposed therein is secured onto the lead electrode, electric and said lead electrode and the electrode of the optical semiconductor element by a metal thin wire a connected to a resin-sealed type optical semiconductor device was, the cup portion with is filled with a thermosetting resin, a portion said molded in a mold member of the lead electrode, the outer peripheral edge obtuse or resin sealed optical semiconductor device characterized by being formed in a curved shape.
  2. 前記光半導体素子の固着箇所から前記リード電極2の先端部分にかけて、前記リード電極に凹状の段差を形成したことを特徴とする請求項1記載の樹脂封止型光半導体装置。 The light from the fixation point of the semiconductor element to the tip portion of the lead electrode 2, the resin sealing type optical semiconductor device according to claim 1, wherein the forming the recessed step on the lead electrode.
  3. 前記リード電極に、熱硬化性樹脂及びモールド部材との接触面積を削減させるための複数の孔を形成したことを特徴とする請求項1記載の樹脂封止型光半導体装置。 Wherein the lead electrode, a resin sealing type optical semiconductor device according to claim 1, wherein the forming a plurality of holes for causing the reduced area of ​​contact with the thermosetting resin and the mold member.
  4. 前記カップ部内に充填される熱硬化性樹脂は、エポキシ樹脂であることを特徴とする請求項1乃至4のうちいずれか1項に記載の樹脂封止型光半導体装置。 The thermosetting resin filled in the cup portion, the resin sealed type optical semiconductor device according to any one of claims 1 to 4, characterized in that an epoxy resin.
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