CN102956792B - Light emitting diode packaging structure - Google Patents
Light emitting diode packaging structure Download PDFInfo
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- CN102956792B CN102956792B CN201110250437.7A CN201110250437A CN102956792B CN 102956792 B CN102956792 B CN 102956792B CN 201110250437 A CN201110250437 A CN 201110250437A CN 102956792 B CN102956792 B CN 102956792B
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- light
- led
- package structure
- emitting diode
- substrate
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Abstract
The invention relates to a light emitting diode packaging structure which comprises a substrate, an electrode, a light emitting diode chip and a packaging body, wherein the electrode is formed on the surface of the substrate, and the light emitting diode chip is arranged on the substrate and is electrically connected with the electrode. The packaging body covers the substrate and is used for packaging the light emitting diode chip inside the substrate. The packaging body comprises a body and a light scattering area surrounding the body. The body comprises a combination surface attached with the substrate and a light emitting surface opposite to the combination surface. The light scattering area is formed by scattered particles doped in the partial body, and the light scattering area is arranged around the light emitting diode chip.
Description
Technical field
The present invention relates to semiconductor structure, particularly relate to a kind of package structure for LED.
Background technology
When generally light-emitting diode (Light Emitting Diode, LED) encapsulating structure being used for the light source as down straight aphototropism mode set, usually require that it has the bright dipping of wide light field, to reduce the generation of luminous point on display screen and bright blanking bar.Be illustrated in figure 1 a kind of package structure for LED 100 producing wide light field, the lens 102 of a V-type are formed at the top exiting surface of this package structure for LED 100, these lens 102 by the surrounding of the some light of light-emitting diode chip for backlight unit 103 outgoing refraction to this package structure for LED 100, thus produce wider light field.But because the top of this package structure for LED 100 is also formed with lens 102, make its thickness and volume comparatively large, and cost of manufacture is also higher.
Summary of the invention
In view of this, be necessary to provide a kind of low cost and the frivolous package structure for LED with wide light field.
A kind of package structure for LED, comprises substrate, electrode, light-emitting diode chip for backlight unit and packaging body.Described electrode is formed at substrate surface, and described light-emitting diode chip for backlight unit is positioned on substrate, and is electrically connected with described electrode.This packaging body covers described substrate and coated described light-emitting diode chip for backlight unit portion in the inner.This packaging body comprises a body and the light scattering sites around this body.This body comprises the faying face and the exiting surface relative with faying face that are sticked with substrate.This light scattering sites is formed by the scattering particles that adulterates in part body, and this light scattering sites is arranged around described light-emitting diode chip for backlight unit.
In above-mentioned package structure for LED, packaging body comprises a light scattering sites around this packaging body, doped with the scattering particles of higher concentration in this light scattering sites, thus the scattering of light can be increased, increase side direction bright dipping, promote the light field scope of this package structure for LED, this light scattering sites is formed by the scattering particles that adulterates in packaging body simultaneously, therefore thickness and the volume of this package structure for LED can not be increased, cost of manufacture is also lower, thus make this package structure for LED can also meet low cost and frivolous requirement while the bright dipping of increase side direction.
Accompanying drawing explanation
Fig. 1 is a kind of package structure for LED schematic diagram of the prior art.
Fig. 2 is a kind of package structure for LED schematic diagram that first embodiment of the invention provides.
Fig. 3 is the vertical view of package structure for LED shown in Fig. 2.
Fig. 4 is the distribution curve flux figure of package structure for LED shown in Fig. 2.
Fig. 5 is a kind of package structure for LED schematic diagram that second embodiment of the invention provides.
Fig. 6 is a kind of package structure for LED schematic diagram that third embodiment of the invention provides.
Main element symbol description
| Package structure for LED | 100，10，20，30 |
| Lens | 102 |
| Substrate | 11 |
| Upper surface | 111 |
| Lower surface | 112 |
| Electrode | 12 |
| Light-emitting diode chip for backlight unit | 103，13 |
| Plain conductor | 131 |
| Packaging body | 14，24，34 |
| Body | 141 |
| Upper exiting surface | 1411 |
| Faying face | 1412 |
| Light scattering sites | 142 |
| Light diffusingsurface | 1421 |
| Side exiting surface | 1422 |
| Scattering particles | 143 |
Following embodiment will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 2 and Fig. 3, one embodiment of the present invention provides a kind of package structure for LED 10, and it comprises substrate 11, electrode 12, light-emitting diode chip for backlight unit 13 and packaging body 14.
Substrate 11 is a rectangular flat, in order to carry described electrode 12, light-emitting diode chip for backlight unit 13 and packaging body 14 thereon on the surface.Described substrate 11 comprises upper surface 111 and and the lower surface 112 that be parallel to each other relative with upper surface 111.Described substrate 11 material is PPA(Polyphthalamide, polyvinyl acetate) etc.Understandable, the length on the described each limit of substrate 11 can be identical or different, and further, the shape of described substrate 11 is not limited to rectangle, and its shape can also be circle etc.
Electrode 12 is formed at the surface of described substrate 11, and this electrode 12 is at least two, and electrically insulated from one another between each electrode 12.Described electrode 12 extends to lower surface 112 from the upper surface 111 of described substrate 11 respectively.Described electrode 12 material used is the good metal material of electric conductivity, as the alloy of one or more in gold, silver, copper, platinum, aluminium, nickel, tin or magnesium.
Light-emitting diode chip for backlight unit 13 is attached on electrode 12 described in one of them.Described light-emitting diode chip for backlight unit 13 is electrically connected respectively by plain conductor 131 and described electrode 12.Understandable, this light-emitting diode chip for backlight unit 13 also can adopt and covers on electrode 12 that brilliant mode is fixed on substrate 11 surface and be electrically connected with described electrode 12.
Packaging body 14 is formed on the upper surface 111 of described substrate 11, covers the part that described electrode 12 is positioned at described upper surface 111, and coated described light-emitting diode chip for backlight unit 13 and plain conductor 131.Described packaging body 14 can be lens, also can be packaging plastic.This packaging body 14 comprises the body 141 that covers described light-emitting diode chip for backlight unit 13 and is positioned at the light scattering sites 142 of body 141 away from the peripheral part, side of light-emitting diode chip for backlight unit 13.This body 141 is roughly in hemisphere shape, the upper exiting surface 1411 comprising arc and the faying face 1412 be mutually sticked with the upper surface of substrate 11.This light scattering sites 142 comprises the ring light diffusingsurface 1421 that is positioned at exiting surface 1411 peripheral part and extends to downward vertically and substrate 11 side connected vertically exiting surface 1422 from the outer peripheral edges of light diffusingsurface 1421.Described light scattering sites 142 is covered in the outer peripheral edge portion of this body 141.Described light scattering sites 142 in the form of a ring.The peripheral part of the rising angle of the corresponding described light-emitting diode chip for backlight unit 13 in described light scattering sites 142.In the present embodiment, the scope between 45 ° to 90 ° of the rising angle of the corresponding described light-emitting diode chip for backlight unit 13 in this light scattering sites 142.The thickness of this light scattering sites 142 increases with the junction of described side exiting surface 1422 respectively to described smooth diffusingsurface 1421 gradually from the junction of described smooth diffusingsurface 1421 with upper exiting surface 1411.This light scattering sites 142 is doped in packaging body 14 by scattering particles 143 and is formed; wherein; the doping content of this light scattering sites 142 inscattering particle 143 is higher than the doping content of the scattering particles 143 in described body 141, and described scattering particles 143 is any one in titanium dioxide granule or silicon oxide particle.Can also comprise fluorescence transition material in described packaging body 14, this fluorescent transition material can be garnet-base fluorescent material, silicate-based fluorescent powder, orthosilicate base fluorescent powder, sulfide base fluorescent powder, thiogallate base fluorescent powder and nitride based fluorescent material.
When this package structure for LED 10 works, light-emitting diode chip for backlight unit 13 emits beam, as denoted by the arrows in fig. 2, the light being positioned at the middle body of this light-emitting diode chip for backlight unit 13 rising angle penetrates from upper exiting surface 1411 after wearing and penetrating body 141, be positioned at the rear directive light scattering sites 142 of light penetration body 141 of peripheral part of the rising angle of light-emitting diode chip for backlight unit 13, due to the scattering particles 143 doped with high concentration in this light scattering sites 142, light is reflected rear major part by the scattering particles 143 in light scattering sites 142 and penetrates from side exiting surface 1422, thus increase the range of exposures of this package structure for LED 10, form wide light field.Refer to Fig. 4, for the distribution curve flux figure of the package structure for LED 10 that the above-mentioned execution mode of the present invention provides, due to this package structure for LED 10 being formed with above-mentioned light scattering sites 142, as can be seen from the figure this package structure for LED 10 is stronger to the bright dipping in the direction of both sides, add side direction bright dipping, thus promote the light field scope of this package structure for LED 10.
Refer to Fig. 5, for the package structure for LED 20 that the second embodiment of the present invention provides, the difference of the package structure for LED 10 of itself and the first embodiment is: undope in the packaging body 24 of this package structure for LED 20 scattering particles 143.
Refer to Fig. 6, for the package structure for LED 30 that the third embodiment of the present invention provides, the difference of the package structure for LED 10 of itself and the first embodiment is: it is inner that the light scattering sites 142 of this package structure for LED 30 is positioned at packaging body 34, between described light-emitting diode chip for backlight unit 13 and the exiting surface of packaging body 34.
The package structure for LED 10 that embodiment of the present invention provides, in 20 and 30, packaging body 14, 24 and 34 light scattering sites 142 comprising the peripheral part of the exiting surface being covered in this packaging body, the scattering of light can be increased, increase side direction bright dipping, thus promote this package structure for LED 10, the light field scope of 20 and 30, this package structure for LED 10 simultaneously, 20 and 30 by means of only at packaging body 14, carry out doping in 24 and 34 and can reach above-mentioned effect, therefore this package structure for LED 10 can not be increased, the thickness of 20 and 30 and volume, cost of manufacture is also lower, thus make this package structure for LED 10, 20 and 30 can also meet low cost and frivolous requirement while the bright dipping of increase side direction.
Be understandable that, for the person of ordinary skill of the art, other various corresponding change and distortion can be made by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (9)
1. a package structure for LED, comprise substrate, electrode, light-emitting diode chip for backlight unit and packaging body, described electrode is formed at substrate surface, described light-emitting diode chip for backlight unit is positioned on substrate, and be electrically connected with described electrode, this packaging body covers described substrate and coated described light-emitting diode chip for backlight unit portion in the inner, it is characterized in that, this packaging body comprises a body and the light scattering sites around this body, this body comprises the faying face and the exiting surface relative with faying face that are sticked with substrate, this light scattering sites is formed by the scattering particles that adulterates in part body, this light scattering sites is arranged around described light-emitting diode chip for backlight unit, this light scattering sites comprises the light diffusingsurface of the upper exiting surface peripheral part being positioned at body and extends downward the side exiting surface of substrate from the outer peripheral edges of light diffusingsurface, this light diffusingsurface is connected with the upper exiting surface top of body, the thickness of this light scattering sites increases gradually from the junction of the junction of described smooth diffusingsurface and upper exiting surface respectively to described smooth diffusingsurface and described side exiting surface.
2. package structure for LED as claimed in claim 1, is characterized in that: doping scattering particles in described body, but the doping content of described light scattering sites inscattering particle is higher than the doping content of body inscattering particle.
3. package structure for LED as claimed in claim 1, is characterized in that: described light scattering sites is positioned near described upper exiting surface.
4. package structure for LED as claimed in claim 1, is characterized in that: described light scattering sites is the scope between 45 ° to 90 ° at the rising angle of described light-emitting diode chip for backlight unit.
5. package structure for LED as claimed in claim 4, is characterized in that: described light scattering sites in the form of a ring.
6. package structure for LED as claimed in claim 1, is characterized in that: described scattering particles is any one in titanium dioxide granule or silicon oxide particle.
7. package structure for LED as claimed in claim 3, is characterized in that: described body is roughly in hemisphere shape, and described light scattering sites is covered in the outer peripheral edge portion of this body.
8. the package structure for LED as described in any one of claim 1 to 7, is characterized in that: described packaging body is lens or packaging plastic.
9. the package structure for LED as described in any one of claim 1 to 7, is characterized in that: described light-emitting diode chip for backlight unit is fixed on substrate surface by pasting or covering brilliant mode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110250437.7A CN102956792B (en) | 2011-08-29 | 2011-08-29 | Light emitting diode packaging structure |
| TW100131007A TWI474521B (en) | 2011-08-29 | 2011-08-30 | Led package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110250437.7A CN102956792B (en) | 2011-08-29 | 2011-08-29 | Light emitting diode packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102956792A CN102956792A (en) | 2013-03-06 |
| CN102956792B true CN102956792B (en) | 2015-07-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110250437.7A Active CN102956792B (en) | 2011-08-29 | 2011-08-29 | Light emitting diode packaging structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102956792B (en) |
| TW (1) | TWI474521B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI531094B (en) | 2013-05-17 | 2016-04-21 | Daxin Materials Corp | And a light-emitting device for a light-emitting device |
| TWI610470B (en) * | 2016-06-13 | 2018-01-01 | 隆達電子股份有限公司 | Light emitting diode chip scale packaging structure, direct type backlight module, and method for manufacturing light emitting device |
| US10910532B2 (en) * | 2017-12-08 | 2021-02-02 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
| CN111509141B (en) * | 2020-05-06 | 2023-08-01 | 上海天马微电子有限公司 | Display panel, preparation method thereof and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI239666B (en) * | 2004-09-16 | 2005-09-11 | Chen-Lun Hsingchen | LED package with diode protection circuit |
| TW200903862A (en) * | 2007-06-14 | 2009-01-16 | Cree Inc | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
| CN101487581A (en) * | 2008-01-17 | 2009-07-22 | 富士迈半导体精密工业（上海）有限公司 | LED light source module |
| TW200952210A (en) * | 2008-06-13 | 2009-12-16 | Advanced Optoelectronic Tech | Light emitting diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101567366A (en) * | 2008-04-25 | 2009-10-28 | 展晶科技(深圳)有限公司 | Light emitting diode |
-
2011
- 2011-08-29 CN CN201110250437.7A patent/CN102956792B/en active Active
- 2011-08-30 TW TW100131007A patent/TWI474521B/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI239666B (en) * | 2004-09-16 | 2005-09-11 | Chen-Lun Hsingchen | LED package with diode protection circuit |
| TW200903862A (en) * | 2007-06-14 | 2009-01-16 | Cree Inc | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
| CN101487581A (en) * | 2008-01-17 | 2009-07-22 | 富士迈半导体精密工业（上海）有限公司 | LED light source module |
| TW200952210A (en) * | 2008-06-13 | 2009-12-16 | Advanced Optoelectronic Tech | Light emitting diode |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102956792A (en) | 2013-03-06 |
| TWI474521B (en) | 2015-02-21 |
| TW201310726A (en) | 2013-03-01 |
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Effective date of registration: 20201023 Address after: Qiuzhen building, Southeast campus, Changshu Institute of technology, No.99 Hushan Road, Changshu Southeast Economic Development Zone, Suzhou City, Jiangsu Province Patentee after: Changshu southeast high tech Venture Service Co., Ltd Address before: 518109, Shenzhen, Guangdong, Baoan District province Longhua Street tenth Pine Industrial Zone, No. two, East Ring Road, No. two Patentee before: ZHANJING Technology (Shenzhen) Co.,Ltd. Patentee before: Rongchuang Energy Technology Co.,Ltd. |