CN201421850Y - Light-emitting diode structure - Google Patents
Light-emitting diode structure Download PDFInfo
- Publication number
- CN201421850Y CN201421850Y CN2009200064898U CN200920006489U CN201421850Y CN 201421850 Y CN201421850 Y CN 201421850Y CN 2009200064898 U CN2009200064898 U CN 2009200064898U CN 200920006489 U CN200920006489 U CN 200920006489U CN 201421850 Y CN201421850 Y CN 201421850Y
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- China
- Prior art keywords
- support
- emitting diode
- light
- backlight unit
- colloid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- Led Device Packages (AREA)
Abstract
The utility model discloses a light-emitting diode structure. Separating colloid which does not completely separate a first support from a second support is arranged on the second support in a penetrating way to improve the area of light reflection, and a light-emitting diode chip is electrically connected with a voltage rectifier diode in parallel by the incompletely separated space. Accordingly,the technical efficacies that the light-emitting efficiency of the light-emitting diode structure is improved and the electronic connecting process is simplified can be achieved.
Description
Technical field
The utility model relates to a kind of light emitting diode construction, refers in particular to the light emitting diode construction that a kind of setting does not intercept the obstruct colloid of light-emitting diode chip for backlight unit and voltage commutation diode fully.
Background technology
In recent years, because light-emitting diode (Light Emitting Diode, LED) have that power consumption is low, component life is long, need not warm up advantages such as lamp time and reaction speed be fast, add that its volume is little, vibration resistance, be fit to volume production, therefore light-emitting diode generally is used on the indicator light and display unit of information, communication and consumption electronic products, as mobile phone and personal digital assistant (Personal Digital Assistant, PDA) screen backlight source, various outdoor display, traffic signal light and car light etc.
Usually light-emitting diode chip for backlight unit is to see through the surface to paste technology (Surface Mount Device, SMD) or chip bonding technology (flip chip bonding) be fixed in have depressed part rubber base in support on, as shown in Figure 1, Fig. 1 illustrates and is existing light emitting diode construction side cutaway view.
In rubber base 51 with depressed part 52, imbed and be provided with first support 53 and second support 54, end in first support 53 and second support 54 promptly is to be exposed to respectively in the depressed part 52 of rubber base 51, the other end then is the both sides of extending rubber base 51 respectively, can form outside electrical junction, so that electrically connect with other electronic installation (not illustrating in graphic).
Then, paste the end that technology is fixed in light-emitting diode chip for backlight unit 55 on first support 53 in the depressed part 52 that is exposed to rubber base 51 by the surface again, and make light-emitting diode chip for backlight unit 55 can see through lead by routing joining technique or chip bonding technology to form electric connections with second support 54, at last, form packing colloid 56 again on the depressed part 52 of rubber base 51, packing colloid 56 promptly can be covered on the depressed part 52.
But; above-mentioned light emitting diode construction is when producing static or reverse voltage; light-emitting diode chip for backlight unit 55 can be subjected to the static or the influence of reverse voltage, causes the damage of light-emitting diode chip for backlight unit 55 through regular meeting, and then causes the inefficacy of light-emitting diode chip for backlight unit 55.
For above-mentioned reasons, prior art proposes a kind of improvement method, please refer to shown in Fig. 2 A and Fig. 2 B, and Fig. 2 A illustrates and is existing light-emitting diode structure-improved side cutaway view; Fig. 2 B illustrates and is existing light-emitting diode structure-improved schematic top plan view.
In rubber base 51 with depressed part 52, be provided with voltage commutation diode 57 in second support 54, the parallel connection that promptly can see through light-emitting diode chip for backlight unit 55 and voltage commutation diode 57 electrically connects, can be effectively by the effect of voltage commutation diode 57, with static or reverse voltage is absorbed, can avoid light-emitting diode chip for backlight unit 55 to be subjected to the static or the influence of reverse voltage, and cause the damage of light-emitting diode chip for backlight unit 55.
Yet, because voltage commutation diode 57 has the characteristic that absorbs extraneous light, therefore, the light that light-emitting diode chip for backlight unit 55 is sent is through voltage commutation diode 57 time, can be absorbed by voltage commutation diode 57, and cause the decline of light-emitting diode chip for backlight unit 55 luminous efficiencies, therefore, promptly can be when forming rubber base 51, between first support 53 and second support 54, be convexly equipped with and intercept colloid 58, light-emitting diode chip for backlight unit 55 and voltage commutation diode 57 are intercepted completely, and the light that promptly can avoid light-emitting diode chip for backlight unit 55 to be sent is absorbed by voltage commutation diode 57, and causes the decline of light-emitting diode chip for backlight unit 55 luminous efficiencies.
But, because intercepting colloid 58 can intercept light-emitting diode chip for backlight unit 55 and voltage commutation diode 57 completely, when light-emitting diode chip for backlight unit 55 emits beam, the area that carries out the light reflection through depressed part 52 can reduce much, and this design still has the problem that light-emitting diode chip for backlight unit 55 luminous efficiencies descend.
In addition, more because obstruct colloid 58 is set between first support 53 and second support 54, during again with light-emitting diode chip for backlight unit 55 and in parallel electric connection of voltage commutation diode 57 formation, can cause the degree of difficulty of routing joining technique, the existing problem that also for this reason designs.
In sum, prior art has been present in since the midium or long term between first support and second support always the obstruct colloid is set as can be known, form between first support and second support and intercept fully, intercept fully and produce the problem that electrically connects difficulty and cause the light emitting diode construction luminous efficiency to descend and intercept colloid, therefore be necessary to propose improved technological means, solve this problem.
The utility model content
Because prior art is present between first support and second support obstruct colloid is set, form between first support and second support and intercept fully, intercept fully and produce the problem that electrically connects difficulty and cause the light emitting diode construction luminous efficiency to descend and intercept colloid, the utility model provides a kind of light emitting diode construction then, wherein:
Light emitting diode construction provided by the utility model, it comprises: first support, second support and rubber base.
Wherein, first support in order to affixed light-emitting diode chip for backlight unit in an end; Part baffle area and chip bonding pad are set in second support, support for connecting outside the part baffle area of second support, the chip bonding pad is positioned at not adjacent with first support side in part baffle area, and the chip bonding pad is arranged on the second interior support of part baffle area scope, the chip bonding pad is in order to affixed voltage commutation diode and voltage commutation diode and first support formation electric connection, and the light-emitting diode and second support form and electrically connect; Rubber base has depressed part and is convexly equipped with in the depressed part bottom surface and is higher than light-emitting diode chip for backlight unit and voltage commutation diode resistance every colloid, the end of the affixed light-emitting diode of first support, and the part baffle area and the chip bonding pad of second support, be embedded in the rubber base and be exposed to depressed part, and intercept colloid and be arranged in the part baffle area, light-emitting diode chip for backlight unit and voltage commutation diode lay respectively at and intercept the formation obstruct of colloid both sides.
Structure provided by the utility model as above, and the difference between the prior art is the set obstruct colloid of the utility model and incomplete obstruct light-emitting diode chip for backlight unit and voltage commutation diode, promptly can see through the part that depressed part is not intercepted, the light that light-emitting diode chip for backlight unit produced is reflected, and can also light-emitting diode chip for backlight unit and voltage commutation diode be carried out the parallel connection electric connection by the part that depressed part is not intercepted, promptly can solve the problem that existing light emitting diode construction is produced.
See through above-mentioned technological means, the utility model can be reached and improve the light emitting diode construction luminous efficiency and simplify the technology effect that electrically connects processing procedure.
Description of drawings
Fig. 1 illustrates and is existing light emitting diode construction side-looking generalized section.
Fig. 2 A illustrates and is existing light-emitting diode structure-improved side-looking generalized section.
Fig. 2 B illustrates and is existing light-emitting diode structure-improved schematic top plan view.
Fig. 3 A illustrates the first enforcement aspect schematic top plan view into first support of light emitting diode construction of the present utility model and second support.
Fig. 3 B illustrates the second enforcement aspect schematic top plan view into first support of light emitting diode construction of the present utility model and second support.
Fig. 3 C illustrates the schematic top plan view into light emitting diode construction of the present utility model.
Fig. 3 D illustrates side-looking first generalized section into light emitting diode construction of the present utility model.
Fig. 3 E illustrates side-looking second generalized section into light emitting diode construction of the present utility model.
[main element symbol description]
10 first supports
11 light-emitting diode chip for backlight unit
20 second supports
21 part baffle areas
22 chip bonding pads
23 voltage commutation diodes
30 rubber bases
31 depressed parts
32 bottom surfaces
33 intercept colloid
40 packing colloids
51 rubber bases
52 depressed parts
53 first supports
54 second supports
55 light-emitting diode chip for backlight unit
56 packing colloids
57 voltage commutation diodes
58 intercept colloid
Embodiment
Below describe conjunction with figs. and embodiment in detail execution mode of the present utility model, whereby to the utility model how the application technology means implementation procedure that solves technical problem and reach the technology effect can fully understand and implement according to this.
Below light emitting diode construction provided by the utility model will be described, and please refer to shown in Fig. 3 A that Fig. 3 A illustrates the first enforcement aspect schematic top plan view into first support of light emitting diode construction of the present utility model and second support.
As shown in the figure, first support 10 and second support 20 are made in punching press (stamping) mode by metallic plate (not illustrating among the figure), and an end of first support 10 is in order to affixed light-emitting diode chip for backlight unit 11; And when second support 20 is made in punching press, also punching press forms part baffle area 21 on second support 20, and right side in part baffle area 21, be the not adjacent side in part baffle area 21 with first support 10, promptly the right side of part baffle area 21 can be defined as chip bonding pad 22, and it should be noted that 22 set positions, chip bonding pad are on second support 20 that part baffle area 21 scopes are extended.
As shown in Figure 3A, implement to see through in the aspect impact style formed part baffle area 21 on second support 20 first, be on second support 20, to offer groove, the part of groove is part baffle area 21, and the part outside the part baffle area 21 of second support 20, not being stamped is cut into the support of connection, in addition, please refer to shown in Fig. 3 B, Fig. 3 B illustrates the second enforcement aspect schematic top plan view into first support of light emitting diode construction of the present utility model and second support; Second implements aspect and first difference of implementing aspect is second to implement aspect is for being the aspects that are stamped into hole in punching press second support 20 formation part baffle areas 21, and the part outside the part baffle area 21 of second support 20, not being stamped is cut into the support of connection.
The light-emitting diode chip for backlight unit 11 that is arranged on first support 10 can form electric connection with second support, 20 any places, the chip bonding pad 22 of second support 20 is the usefulness in order to affixed voltage commutation diode 23, because light-emitting diode chip for backlight unit 11 is subjected to the static or the influence of reverse voltage easily, and cause the damage of light-emitting diode chip for backlight unit 11, therefore, promptly can be on second support 20 affixed voltage commutation diode 23, and light-emitting diode chip for backlight unit 11 and voltage commutation diode 23 parallel waies are formed electric connection, so that the voltage commutation diode 23 that allows reverse current to be provided, so as to avoiding the light-emitting diode chip for backlight unit 11 suffered static or the influence of reverse voltage, and cause the damage of light-emitting diode chip for backlight unit 11.
Above-mentioned voltage commutation diode 23 can be Zener diode or avalanche-type diode is wherein a kind of, at this only for illustrating, do not limit to application category of the present utility model with this, any can reaching absorbs static or the electronic component of reverse voltage effect all can be used by the utility model.
Behind the punching press processing procedure of finishing first support 10 and second support 20, and first support 10 and second support 20 are to implement aspect with first to describe, but do not limit to application category of the present utility model with this, please refer to shown in Fig. 3 C, Fig. 3 C illustrates the schematic top plan view into light emitting diode construction of the present utility model; Form rubber base 30 in the mode of imbedding ejaculation (insert molding) with depressed part 31, soon first support 10 and second support, 20 parts are embedded in the rubber base 30 and are exposed to depressed part 31, and corresponding to part baffle area 21 parts of second support 20, when ejection formation, more can form and intercept colloid 33 in the bottom surface 32 of depressed part 31, promptly intercept colloid 33 and be arranged in the part baffle area 21 of second support 20, intercept colloid 33 and be formed in one, and the height of obstruct colloid 33 need be higher than light-emitting diode chip for backlight unit 11 and voltage commutation diode 23 with rubber base 30.
Owing to intercept the part baffle area 21 that colloid 33 is arranged in second support 20, and chip bonding pad 22 is provided with the position on second support 20 that part baffle area 21 scopes are extended, promptly intercept colloid 33 when being arranged in the part baffle area 21 of second support 20, promptly can see through between the chip bonding pad 22 and first support 10 and intercept colloid 33 and form and intercept.
And owing to be support for connecting outside the part baffle area 21, therefore, intercept colloid 33 and can't be formed at naturally outside the part baffle area 21 when forming, intercept colloid 33 and only intercept between the chip bonding pad 22 and first support, remainder can't form barriering effect.
It should be noted that, in second support, 20 set part baffle areas 21 sizes according to voltage commutation diode 23, decide the length of part baffle area 21, therefore, the size that intercepts colloid 33 and be according to part baffle area 21 is formed, and the length that promptly the intercepts colloid 33 also size of the voltage commutation diode 23 of the chip bonding pad 22 by second support 20 decides.
And first support 10 and second support 20 extend the part of the both sides of rubber base 30, can form outside electrical junction (not illustrating in graphic) so that electrically connect, or seeing through outside electrical junction provides electrical polarity with other electronic installation (not illustrating in graphic).The light-emitting diode chip for backlight unit 11 that promptly is disposed at first support 10 promptly is to extend the outside electrical junction of rubber base 30 and electrically connect with other electronic installation by first support 10 and second support 20, or provides light-emitting diode chip for backlight unit 11 needed electrical polarity.
Above-mentioned metallic plate can be copper, iron or other conductivity good metallic plate or alloy sheets.That is to say that the material of first support 10 and second support 20 can be copper, iron or the good metal or alloy of other conductivity.The material of rubber base 30 then can be polyphthalamide (polyphthalamide, PPA) or other be commonly used to thermoplastic resin as the rubber base 30 of light emitting diode construction.
Then, please also refer to shown in Fig. 3 D and Fig. 3 E, Fig. 3 D illustrates side-looking first generalized section into light emitting diode construction of the present utility model; Fig. 3 E illustrates side-looking second generalized section into light emitting diode construction of the present utility model; After the manufacturing process of finishing first support 10, second support 20 and rubber base 30, promptly can see through the surface and paste technology (Surface Mount Device, SMD) light-emitting diode chip for backlight unit 11 is fixed on depressed part 31 interior first supports 10 that are exposed to rubber base 30, and voltage commutation diode 23 is seen through the constructed chip bonding pad 22 (please refer to shown in Fig. 3 C) that is fixed in second support 20.
Then, the light-emitting diode chip for backlight unit 11 that will be fixed on first support 10 with routing joining technique (wire bonding) or chip bonding technology (flip chipbonding) is electrically connected at second support 20 (please refer to shown in Fig. 3 C) again, and the voltage commutation diode 23 that will be fixed on second support 20 is electrically connected on first support 10, so as to of the in parallel electric connection of formation light-emitting diode chip for backlight unit 11 with voltage commutation diode 23, drawing illustrate forms and electrically connects (at this only for illustrating for adopting routing joining technique mode that light-emitting diode chip for backlight unit 11 and voltage commutation diode 23 are seen through lead, do not limit to application category of the present utility model with this), first support 10 and second support 20 can provide light-emitting diode chip for backlight unit 11 and voltage commutation diode 23 different electrical polarity respectively.
And light-emitting diode chip for backlight unit 11 promptly can see through the protection of voltage commutation diode 23, avoiding the light-emitting diode chip for backlight unit 11 suffered static or the influence of reverse voltage, and causes the damage of light-emitting diode chip for backlight unit 11.
In addition, more can form packing colloid 40 on the depressed part 31 of rubber base 30, packing colloid 40 promptly can be covered in the light-emitting diode chip for backlight unit 11 and voltage commutation diode 23 in the depressed part 31, promptly can protect light-emitting diode chip for backlight unit 11.
Above-mentioned packing colloid 40 for example is that the mode with a glue (dispensing) forms (at this only for illustrating, do not limit to application category of the present utility model) with this, and can be mixed with fluorescent material (not illustrating in graphic) in the packing colloid 40, therefore when irradiate light that light-emitting diode chip for backlight unit 11 sent makes its visible light that inspires another kind of color to fluorescent material, the light that light-emitting diode chip for backlight unit 11 sent can mix with the light that fluorescent material is ejected and produce the mixed light effect.
Please refer again to shown in Fig. 3 C, because light-emitting diode chip for backlight unit 11 forms electric connection in parallel with voltage commutation diode 23, when producing static or reverse voltage, promptly can see through voltage commutation diode 23 with static or reverse voltage is offseted, so as to avoiding the damage of light-emitting diode chip for backlight unit 11.
But because the characteristic of voltage commutation diode 23, when light process voltage commutation diode 23, can be absorbed by voltage commutation diode 23, and then cause the luminous efficiency of light-emitting diode chip for backlight unit 11 to descend, therefore, can see through the obstruct colloid 33 that corresponds to part baffle area 21, light-emitting diode chip for backlight unit 11 and voltage commutation diode 23 are intercepted, the light that promptly can avoid light-emitting diode chip for backlight unit 11 to be sent is absorbed by voltage commutation diode 23, and then the problem that causes light-emitting diode chip for backlight unit 11 luminous efficiencies to descend.
In addition, please referring again to shown in Fig. 3 D and Fig. 3 E, be between first support and second support, to form to intercept colloid in the prior art, and intercepting colloid is completely first support and second support to be formed obstruct, therefore, when light-emitting diode chip for backlight unit is luminous, because being subjected to intercepting colloid intercepts completely, can have influence on the reflective surface area of light-emitting diode chip for backlight unit light, because reflective surface area is restricted, the light that light-emitting diode chip for backlight unit can't be reflected in the zone that is intercepted causes the decline of light-emitting diode chip for backlight unit luminous efficiency.
Therefore, the utility model is because the obstruct colloid 33 that is arranged on second support 20 only forms obstruct to light-emitting diode chip for backlight unit 11 and voltage commutation diode 23, part outside part baffle area 21 there is no to form and intercepts colloid 33, form the aspect that does not intercept fully between first support 10 and second support 20, the light that sent of light-emitting diode chip for backlight unit 11 more can see through not and to be intercepted the depressed part 31 that colloid 33 intercepted and carry out the reflection of light whereby, can increase the reflective surface area of light-emitting diode chip for backlight unit 11 light, and increase the illumination of light-emitting diode chip for backlight unit 11, and then promote the luminous efficiency of light-emitting diode chip for backlight unit 11.
In addition, because intercepting colloid 33 does not intercept light-emitting diode chip for backlight unit 11 and voltage commutation diode 23 fully, therefore, form when electrically connecting light-emitting diode chip for backlight unit 11 and voltage commutation diode 23 being carried out the routing joining technique, lead can be seen through and do not intercepted the part formation electric connection that colloid 33 intercepts, promptly can reduce the degree of difficulty of routing joining technique.
In sum, difference between the utility model and the prior art is the set obstruct colloid of the utility model and incomplete obstruct light-emitting diode chip for backlight unit and voltage commutation diode as can be known, promptly can see through the part that depressed part is not intercepted, the light that light-emitting diode chip for backlight unit produced is reflected, and can also light-emitting diode chip for backlight unit and voltage commutation diode be carried out the parallel connection electric connection through the part that depressed part is not intercepted, promptly can solve the problem that existing light emitting diode construction is produced.
Can solve by this technological means that prior art is existing to be provided with the obstruct colloid between first support and second support, form between first support and second support and intercept fully, intercept and produce the problem that electrically connects difficulty fully and cause the light emitting diode construction luminous efficiency to descend and intercept colloid, and then reach raising light emitting diode construction luminous efficiency and simplify the technology effect that electrically connects processing procedure.
Though execution mode disclosed in the utility model as above, only described content is not in order to direct qualification scope of patent protection of the present utility model.Technical staff in the technical field under any the utility model under the prerequisite that does not break away from spirit and scope disclosed in the utility model, can do a little change what implement in form and on the details.Scope of patent protection of the present utility model, still must with appended claim the person of being defined be as the criterion.
Claims (6)
1, a kind of light emitting diode construction is characterized in that comprising:
One first support is used for an affixed light-emitting diode chip for backlight unit in this first support, one end;
One second support, an a part of baffle area and a chip bonding pad are set, support for connecting outside this part baffle area of this second support, this chip bonding pad is positioned at not adjacent with this first support side in this part baffle area, and this chip bonding pad is arranged on this second support of this part baffle area scope extension, this chip bonding pad is used for an affixed voltage commutation diode and this voltage commutation diode and this first support and forms electric connection, and this light-emitting diode and this second support form and electrically connect; And
One rubber base, have a depressed part and be convexly equipped with and be higher than one of this light-emitting diode chip for backlight unit and this voltage commutation diode and intercept colloid in this depressed part bottom surface, the end of affixed this light-emitting diode of this first support, and this part baffle area and this chip bonding pad of this second support, be embedded in this rubber base and be exposed to this depressed part, and this obstruct colloid is arranged in this part baffle area, and this light-emitting diode chip for backlight unit and this voltage commutation diode lay respectively at these obstruct colloid both sides and form obstruct.
2, light emitting diode construction as claimed in claim 1 is characterized in that this part baffle area is to offer a groove in this second support.
3, light emitting diode construction as claimed in claim 1 is characterized in that this part baffle area is to wear a hole in this second support.
4, light emitting diode construction as claimed in claim 1 is characterized in that this part baffle area is the obstruct length that determines this part baffle area with the size of this voltage commutation diode.
5, light emitting diode construction as claimed in claim 1 is characterized in that this voltage commutation diode is a Zener diode or an avalanche-type diode.
6, light emitting diode construction as claimed in claim 1 is characterized in that this light emitting diode construction more comprises a packing colloid, is disposed on this rubber base and is covered in this depressed part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200064898U CN201421850Y (en) | 2009-03-26 | 2009-03-26 | Light-emitting diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200064898U CN201421850Y (en) | 2009-03-26 | 2009-03-26 | Light-emitting diode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201421850Y true CN201421850Y (en) | 2010-03-10 |
Family
ID=41808511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200064898U Expired - Fee Related CN201421850Y (en) | 2009-03-26 | 2009-03-26 | Light-emitting diode structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201421850Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012075652A1 (en) * | 2010-12-10 | 2012-06-14 | 深圳市华星光电技术有限公司 | Light emitting diode package structure |
-
2009
- 2009-03-26 CN CN2009200064898U patent/CN201421850Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012075652A1 (en) * | 2010-12-10 | 2012-06-14 | 深圳市华星光电技术有限公司 | Light emitting diode package structure |
| US8564011B2 (en) | 2010-12-10 | 2013-10-22 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Light-emitting diode package structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: I-CHIUN PRECISION ELECTRIC INDUSTRY (CHINA) CO., L Free format text: FORMER OWNER: I-CHIUN PRECISION INDUSTRY CO., LTD. Effective date: 20120111 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: TAIWAN, CHINA TO: 215343 SUZHOU, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20120111 Address after: 215343 Jiangsu province Kunshan City Qiandeng Town Shipu Songnan Road No. 2 Patentee after: I-Chiun Precision Electric Industry (China) Co., Ltd., Address before: Taiwan County, Taipei, China Patentee before: I-Chiun Precision Industry Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100310 Termination date: 20170326 |