CN101752470B - Method for improving plating product process of luminous diode structure - Google Patents
Method for improving plating product process of luminous diode structure Download PDFInfo
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- CN101752470B CN101752470B CN2008101845137A CN200810184513A CN101752470B CN 101752470 B CN101752470 B CN 101752470B CN 2008101845137 A CN2008101845137 A CN 2008101845137A CN 200810184513 A CN200810184513 A CN 200810184513A CN 101752470 B CN101752470 B CN 101752470B
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- depressed part
- rubber base
- emitting diode
- plating
- light emitting
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Abstract
The invention discloses a method for improving a plating product process of a luminous diode structure, which comprises the steps of: covering the periphery of a glue base of the luminous diode structure and the bottom of the concave part of the glue base with a masking plating tool in the process of product process; further forming a layer of metal reflecting layer at the region which is not covered by the masking plating tool on the luminous diode structure; and removing the masking plating tool to from a layer of metal reflecting layer on the surface of the glue base and the profile of the concave part of the glue base. The method can solve the problems that the glue base is easily damaged and the cutting region is easily scorched as the insulating product process is cut by means of laser when the luminous diode structure is plated with the metal reflecting layer, thereby being capable of achieving the technical effect for improving the good rate of the plating product process of the luminous diode structure.
Description
Technical field
The present invention relates to a kind of method for improving plating product process of light-emitting diode; Especially refer to a kind ofly in electroplating process, cover light emitting diode construction, with the method for improving plating product process of the light-emitting diode that is implemented in light emitting diode construction metal plated reflector through hiding plating smelting tool.
Background technology
In recent years; Because light-emitting diode (Light Emitting Diode; LED) have that power consumption is low, component life is long, need not warm up advantages such as lamp time and reaction speed be fast; Add that its volume is little, vibration resistance, be fit to volume production; Therefore light-emitting diode generally is used on the indicator light and display unit of information, communication and consumption electronic products, like mobile phone and personal digital assistant (Personal Digital Assistant, PDA) screen backlight, various outdoor display, traffic signal light and car light etc.
Usually LED wafer is through surperficial technology for applying (Surface Mount Device; SMD) or chip bonding technology (flip chip bonding) is fixed on the support in the rubber base with depressed part; And the internal structure of rubber base and support has the influence of substantivity for the illumination effect of LED wafer; For the luminous efficiency that makes LED wafer improves; Please refer to shown in Figure 1; Fig. 1 illustrates the light-emitting diode electroplated structural generalized section into prior art; Existing way is at the depressed part 92 of rubber base 91, rubber base 91 and the support 93 in the depressed part 92 and plates layer of metal reflector 94, and the mode of plating can adopt methods such as sputtering way, spraying plating mode metallic reflector to be plated on the depressed part and the support in the depressed part of rubber base, rubber base, promptly can effectively improve the luminous efficiency of LED wafer through metallic reflector 94.
Can conducting for making between the support 93 not; Must between the support 93 of depressed part 92, form insulation division 95 intercepts; Yet, when the depressed part 92 of rubber base 91, rubber base 91 and support 93 metal plated reflector, but be easy to take place make the short-circuit condition (as shown in the figure) that forms conducting between the support 93 because metallic reflector 94 covers on the insulation division 95; Therefore, must through laser mode the metallic reflector on the insulation division 95 94 be removed again usually.
But, when the metallic reflector that insulation division 95 is plated 94 is removed,, causing the surperficial impaired of insulation division 95 easily because the energy of laser is excessive, depressed part 92 surfaces that are rubber base 91 can be impaired; And the laser of crossing macro-energy is except meeting damages the surface of insulation division 95, further can make metallic reflector 94 at cutting zone because excessive energy causes producing the situation generation that cutting zone burns easily.
In sum; Can know that prior art has existed light emitting diode construction when the plated metal reflector always since the midium or long term; Take laser mode cut insulation making cause rubber base to damage easily and problem that cutting zone burns; Therefore be necessary to propose improved technological means, solve this problem.
Summary of the invention
Because prior art exists light emitting diode construction when the plated metal reflector; Take laser mode cut insulation making cause rubber base to damage easily and problem that cutting zone burns; The present invention discloses a kind of method for improving plating product process of light-emitting diode then, wherein:
The method for improving plating product process of the light emitting diode construction that the present invention disclosed, it comprises the following step:
At first; On metallic plate, form many pack supports unit and a plurality of rubber base of arranging with array way, every pack support unit is corresponding with a rubber base, and wherein each rubber base has depressed part respectively; Carrier unit has at least two supports respectively, and an end of each support is to be exposed in the depressed part; Then, be covered in around each rubber base and the bottom of the depressed part of each rubber base to hide plating smelting tool; At last, form metallic reflector in hiding the unlapped zone of plating smelting tool.
The method for improving plating product process of the light emitting diode construction that the present invention disclosed, it comprises the following step:
At first, on metallic plate, form at least two supports and rubber base, wherein rubber base has depressed part, and an end of support is exposed in the depressed part; Then, be covered in around the rubber base and the bottom of depressed part to hide plating smelting tool; At last, form metallic reflector and on light emitting diode construction, hide the unlapped zone of plating smelting tool.
The System and method for that the present invention disclosed as above; And the difference between the prior art is that the present invention utilizes and hides plating smelting tool and be covered in around the rubber base of light emitting diode construction and the bottom of the depressed part of rubber base in the processing procedure process; And then formation layer of metal reflector hides the unlapped zone of plating smelting tool on light emitting diode construction; After removing screening plating smelting tool at last; Promptly can accomplish and on the side of the depressed part of rubber base surface and rubber base, form the layer of metal reflector, except can be, more can avoid the surface of insulation division can be not impaired so that the side of the depressed part of rubber base surface and rubber base has the high reflecting effect of minute surface; Metallic reflector can not produce burnt trace, uses the luminous efficiency that improves LED wafer.
Through above-mentioned technological means, the present invention can reach the technological effect of the electroplating process yield lifting of light emitting diode construction.
Description of drawings
Fig. 1 illustrates the light-emitting diode electroplated structural generalized section into prior art.
Fig. 2 illustrates and is the generalized section of light-emitting diode electroplated structural of the present invention in manufacturing process.
Fig. 3 A illustrates and is the generalized section of light-emitting diode electroplated structural of the present invention when electroplating.
Fig. 3 B illustrates and is the section enlarged diagram of light-emitting diode electroplated structural of the present invention when electroplating.
Fig. 3 C illustrates and is the schematic top plan view of light-emitting diode electroplated structural of the present invention when electroplating completion.
Fig. 3 D illustrates and is the generalized section of light-emitting diode electroplated structural of the present invention when electroplating completion.
Fig. 4 illustrates the generalized section into light emitting diode construction of the present invention.
Fig. 5 illustrates and is light-emitting diode plating array structure schematic top plan view of the present invention.
Embodiment
Below will cooperate graphic and embodiment specifies execution mode of the present invention, by this to the present invention how the application technology means implementation procedure that solves technical problem and reach technological effect can make much of and implement according to this.
At first, please refer to shown in Figure 2ly, Fig. 2 illustrates and is the generalized section of light-emitting diode electroplated structural of the present invention in manufacturing process.
As shown in the figure, on metallic plate, process two supports 20 with punching press (stamping) mode, then, form rubber base 10, so that each support 20 parts are embedded in the rubber base 10 with the mode of imbedding ejaculation (insert molding).And rubber base 10 has depressed part 11, and the end in each support 20 promptly is to be exposed to respectively in the depressed part 11 of rubber base 10, and the other end then is the both sides of extending rubber base 10 respectively, so that electrically connect with other electronic installations (not illustrating in graphic).In other words, the LED wafer of subsequent configuration in the depressed part 11 of rubber base 10 promptly is to extend the end of rubber base 10 and electrically connect with other electronic installations through support 20.
At this, metallic plate can be copper, iron or other conductivity good metallic plate or alloy sheets.That is to say that the material of support 20 can be copper, iron or the good metal or alloy of other conductivity.The material of rubber base 10 then can be polyphthalamide (polyphthalamide, PPA) or other be commonly used to thermoplastic resin as the rubber base 10 of light emitting diode construction.
Certainly, in other embodiments, also can form earlier after the rubber base 10, again respectively at forming support 20 on the rubber base 10.Have the knack of this art can decide rubber base 10 and support 20 voluntarily according to actual demand process sequence.
Because being polyphthalamide or other, the material of rubber base 10 is commonly used to thermoplastic resin as the rubber base of light emitting diode construction; Reflective can be relatively poor on the material characteristic; Therefore, for the luminous efficiency that makes LED wafer improves, can plate the layer of metal reflector at the depressed part 11 of rubber base 10; Use the reflective of the depressed part 11 of strengthening rubber base 10, promptly can improve the LED wafer luminous efficiency.
Therefore, please refer to shown in Fig. 3 A, Fig. 3 A illustrates and is the generalized section of light-emitting diode electroplated structural of the present invention when electroplating; The present invention will be covered in around the rubber base 10 and the bottom 12 of the depressed part 11 of rubber base 10 to hide plating smelting tool 40.
Wherein, When the bottom 12 of the depressed part 11 of rubber base 10 covers to hide plating smelting tool 40; Hide and plate the bottom 12 that smelting tool 40 can be covered in the depressed part 11 of rubber base 10 fully; Or hiding plating smelting tool 40 only is covered in first insulation division 13 between bottom 12 supports 20 of depressed part 11 of rubber base 10; Cause support 20 short circuits to take place to avoid the conducting between the support 20, illustrate is plated the situation of bottom 12 that smelting tool 40 can be covered in the depressed part 11 of rubber base 10 fully for hiding on the drawing, but does not limit to application of the present invention with this.
Hide plating smelting tool 40 with rubber base 10 around and the bottom 12 of the depressed part 11 of rubber base 10 cover accomplish after; Then; (direction of arrow is sputter direction or spraying plating direction in graphic to plate smelting tool 40 unlapped zones with sputtering way (sputtering) or spraying plating mode in screening; And above-mentioned plating mode is merely and illustrates; Do not limit to the restriction of the present invention, anyly can reach the technological means that the present invention electroplates effect and should be contained in the present invention for plating mode with this) form layer of metal reflector 30, the side 14 and the surface 17 of rubber base 10 that are the depressed part 11 of rubber base 10 form layer of metal reflector 30; By this can be so that the surface 17 of the side 14 of the depressed part 11 of rubber base 10 and rubber base 10 has the high reflecting effect of minute surface, to improve the luminous efficiency of LED wafer.
In addition, please with reference to shown in Fig. 3 B, Fig. 3 B illustrates and is the section enlarged diagram of light-emitting diode electroplated structural of the present invention when electroplating; No matter when covering to hide plating smelting tool 40 in the bottom 12 of the depressed part 11 of rubber base 10; Adopt and hide the bottom 12 that plating smelting tool 40 is covered in the depressed part 11 of rubber base 10 fully; Or hiding plating smelting tool 40 only is covered in first insulation division 13 between bottom 12 supports 20 of depressed part 11 of rubber base 10; Hide and plate the side bottom 15 that smelting tool 40 all more can be covered in depressed part 11; The side bottom 15 of depressed part 11 is defined as from the bottom 12 of depressed part 11 starts at the part that is no more than side 14 length 1/10th along the side 14 of depressed part 11; Can form second insulation division 16 (shown in Fig. 3 C and Fig. 3 D) by this, when the metal plated reflector 30, cause support 20 situation of short circuit because metallic reflector 30 forms conducting states with support 20 with the side 14 of avoiding depressed part 11.
Then, please be simultaneously with reference to shown in figure 3C and Fig. 3 D, Fig. 3 C illustrates and is the schematic top plan view of light-emitting diode electroplated structural of the present invention when electroplating completion; Fig. 3 D illustrates and is the generalized section of light-emitting diode electroplated structural of the present invention when electroplating completion; To hide plating smelting tool 40 again removes; Promptly can accomplish the processing procedure that on the surface 17 of the side 14 of the depressed part 11 of rubber base 10 and rubber base 10, forms layer of metal reflector 30; Except can be so that the surface 17 of the side 14 of the depressed part 11 of rubber base 10 and each rubber base 10 has the high reflecting effect of minute surface; More can avoid the surface of first insulation division 13 can be not impaired, and metallic reflector 30 can not produce burnt trace, use the luminous efficiency that improves LED wafer.At this moment, the light-emitting diode electroplating process is roughly accomplished.
Then, please refer to shown in Figure 4ly, Fig. 4 illustrates the generalized section into light emitting diode construction of the present invention; Light emitting diode construction with above-mentioned completion electroplating process; Again through surperficial technology for applying (Surface Mount Device; SMD) LED wafer 50 is fixed in one of them the end of depressed part 11 inner supports 20 that is exposed to rubber base 10; And through routing joining technique (wire bonding) or chip bonding technology (flip chip bonding) and another support 20 formation electric connections; Drawing illustrate (is merely at this and illustrates for adopting routing joining technique mode that LED wafer 50 is formed to electrically connect with another support 20; Do not limit to application of the present invention with this), support 20 can provide LED wafer 50 different electrical polarity respectively.
Then, on rubber base 10, form packing colloid 60 again, to be covered in the end that the depressed part 11 that is placed with LED wafer 50 and support 20 are electrically connected to LED wafer 50.At this moment, the processing procedure of light emitting diode construction is roughly accomplished.
Wherein, Packing colloid 60 for example is that the mode with a glue (dispensing) forms; And can be mixed with phosphor powder (not illustrating in graphic) in the packing colloid 60; Therefore when irradiate light that LED wafer 50 sent makes its visible light that inspires another kind of color to phosphor powder, the light that LED wafer 50 sent can mix with the light that phosphor powder is ejected and produce the mixed light effect.
More than be the flow process of single light-emitting diode electroplating process and single light-emitting diode processing procedure, then, please with reference to shown in Figure 5, Fig. 5 illustrates and is light-emitting diode plating array structure schematic top plan view of the present invention; In the present invention; Can also on metallic plate 70, form the many pack supports unit 80 and a plurality of rubber bases 10 arranged with array way; Every pack support unit 80 is corresponding with a rubber base 10; Wherein each rubber base 10 has a depressed part 11 respectively, and each carrier unit 80 has at least two supports 20 respectively, and an end of support 20 is to be exposed in the depressed part 11.
Then; Be covered in around each rubber base 10 and the bottom 12 of the depressed part 11 of each rubber base 10 to hide plating smelting tool 40; And form layer of metal reflector 30 hiding plating smelting tool 40 unlapped zones with sputtering way or spraying plating mode; To hide again after plating smelting tool 40 removes; Promptly can accomplish the processing procedure that on the surface 17 of the side 14 of the depressed part 11 of each rubber base 10 and each rubber base 10, forms layer of metal reflector 30, make side 14 and the surface 17 of each rubber base 10 of depressed part 11 of each rubber base 10 have the high reflecting effect of minute surface.
The process of above-mentioned each processing procedure can be with reference to the flow process of single light-emitting diode electroplating process and single light-emitting diode processing procedure; No longer give unnecessary details at this; Through on metallic plate 70, forming the many pack supports unit of arranging with array way 80 and a plurality of rubber bases 10; Can process the light-emitting diode electroplated structural fast with the mass mode by this, and can process light emitting diode construction fast with the mass mode.
Have the knack of this art and understand the present invention more for making, below please refer again to Fig. 4 the made light emitting diode construction of the foregoing description is detailed.
The light emitting diode construction that the present invention disclosed, it comprises: rubber base 10, support 20, metallic reflector 30, LED wafer 50 and packing colloid 60.
Wherein, Rubber base 10 has the depressed part 11 of placing LED wafer 50; And rubber base 10 is embedded in each support 20 parts in the rubber base 10 with the mode of imbedding ejaculation; Make that the end in each support 20 promptly is to be exposed to respectively in the depressed part 11 of rubber base 10, the other end then is the both sides of extending rubber base 10 respectively, so that electrically connect with other electronic installations (not illustrating in graphic).
Then; LED wafer 50 is to be fixed in one of them the end of depressed part 11 inner supports 20 that is exposed to rubber base 10 with surperficial technology for applying, and LED wafer 50 can be red light-emitting diode wafer, blue light-emitting diode wafer or green light LED wafer.
Packing colloid 60 is to be covered in the end that supports 20 in the depressed part 11 that is placed with LED wafer 50 and the depressed part 11 are electrically connected to LED wafer 50, avoids in the influence of ambient temperature, moisture and noise in order to the LED wafers 50 that protection is placed in the depressed part 11.And packing colloid 60 can be doped with phosphor powder (not illustrating in graphic), so that light emitting diode construction has the effect of mixed light, to form diversified glow color.
Please continue with reference to shown in Figure 4, an end of each support 20 be positioned at packing colloid 60 and with LED wafer 50 electric connections.Wherein, LED wafer 50 can routing engages or the mode of chip bonding is electrically connected to an end of each support 20, it is not done any qualification here.The other end of each support 20 then is to extend packing colloid 60, so that electrically connect with other electronic installations (not illustrating in graphic).In other words, LED wafer 50 promptly is to electrically connect with other electronic installations through support 20.
In sum; But the difference between knowledge capital invention and the prior art is that the present invention utilizes in the processing procedure process hides rubber base that plating smelting tool is covered in light emitting diode construction and the bottom of the depressed part of rubber base on every side; And then formation layer of metal reflector hides the unlapped zone of plating smelting tool on light emitting diode construction; After removing screening plating smelting tool at last; Promptly can accomplish and on the side of the depressed part of rubber base surface and rubber base, form the layer of metal reflector, except can be, more can avoid the surface of insulation division can be not impaired so that support has the high reflecting effect of minute surface; Metallic reflector can not produce burnt trace, uses the technological means of the luminous efficiency that improves LED wafer.
Can solve the existing light emitting diode construction of prior art when the plated metal reflector by this technological means; Take laser mode cut insulation making cause rubber base to damage easily and problem that cutting zone burns, and then reach the technological effect that the electroplating process yield of light emitting diode construction promotes.
Though the execution mode that the present invention disclosed is as above, be described content be not in order to direct qualification scope of patent protection of the present invention.Have common knowledge the knowledgeable in the technical field under any the present invention, under the prerequisite of spirit that does not break away from the present invention and disclosed and scope, can do a little change reaching on the details of implementing in form.Scope of patent protection of the present invention, still must with appended claim scope the person of being defined be as the criterion.
Claims (14)
1. the method for improving plating product process of a light emitting diode construction is characterized in that, comprises the following step:
On a metallic plate, form many pack supports unit and a plurality of rubber base of arranging with array way; Every pack support unit is corresponding with a rubber base; Wherein respectively this rubber base has a depressed part respectively, and respectively this carrier unit has at least two supports respectively, and an end of those supports is to be exposed in this depressed part;
Hiding plating smelting tool with one is covered in respectively around this rubber base and the bottom of this depressed part of this rubber base respectively; And
Form a metallic reflector in this unlapped zone of screening plating smelting tool.
2. the method for improving plating product process of light emitting diode construction as claimed in claim 1 is characterized in that, wherein being covered in respectively with this screening plating smelting tool, the bottom of this depressed part of this rubber base is the bottom that covers this depressed part fully.
3. the method for improving plating product process of light emitting diode construction as claimed in claim 1 is characterized in that, wherein being covered in respectively with this screening plating smelting tool, the bottom of this depressed part of this rubber base is to be covered in one first insulation division between those supports with this screening plating smelting tool.
4. like the method for improving plating product process of claim 1,2 or 3 described light emitting diode constructions, it is characterized in that wherein this screening plating smelting tool more is covered in the bottom of the side of this depressed part, to form one second insulation division.
5. the method for improving plating product process of light emitting diode construction as claimed in claim 4 is characterized in that, wherein the bottom of the side of this depressed part is defined as from the bottom of this depressed part and starts at the part that is no more than side edge length 1/10th along the side of this depressed part.
6. the method for improving plating product process of light emitting diode construction as claimed in claim 1 is characterized in that, wherein those carrier units are those supports with made respectively this carrier unit of impact style.
7. the method for improving plating product process of light emitting diode construction as claimed in claim 1 is characterized in that, wherein this metallic reflector be selected from sputtering way or spray degree mode one of them, be formed at this unlapped zone of screening plating smelting tool.
8. the method for improving plating product process of a light emitting diode construction is characterized in that, comprises the following step:
On a metallic plate, form at least two supports and a rubber base, wherein this rubber base has a depressed part, and an end of those supports is to be exposed in this depressed part;
Hiding plating smelting tool with one is covered in around this rubber base and the bottom of this depressed part; And
Form a metallic reflector in this unlapped zone of screening plating smelting tool.
9. the method for improving plating product process of light emitting diode construction as claimed in claim 8 is characterized in that, the bottom that wherein is covered in this depressed part of this rubber base with this screening plating smelting tool is the bottom that covers this depressed part fully.
10. the method for improving plating product process of light emitting diode construction as claimed in claim 8 is characterized in that, the bottom that wherein is covered in this depressed part of this rubber base with this screening plating smelting tool is to be covered in one first insulation division between those supports with this screening plating smelting tool.
11. the method for improving plating product process like claim 8,9 or 10 described light emitting diode constructions is characterized in that, wherein this screening plating smelting tool more is covered in the bottom of the side of this depressed part, to form one second insulation division.
12. the method for improving plating product process of light emitting diode construction as claimed in claim 11; It is characterized in that wherein the bottom of the side of this depressed part is defined as from the bottom of this depressed part and starts at the part that is no more than side edge length 1/10th along the side of this depressed part.
13. the method for improving plating product process of light emitting diode construction as claimed in claim 8 is characterized in that, wherein those supports are made with impact style.
14. the method for improving plating product process of light emitting diode construction as claimed in claim 8 is characterized in that, wherein this metallic reflector be selected from sputtering way or spray degree mode one of them, be formed at this unlapped zone of screening plating smelting tool.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101845137A CN101752470B (en) | 2008-12-03 | 2008-12-03 | Method for improving plating product process of luminous diode structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101845137A CN101752470B (en) | 2008-12-03 | 2008-12-03 | Method for improving plating product process of luminous diode structure |
Publications (2)
| Publication Number | Publication Date |
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| CN101752470A CN101752470A (en) | 2010-06-23 |
| CN101752470B true CN101752470B (en) | 2012-02-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008101845137A Expired - Fee Related CN101752470B (en) | 2008-12-03 | 2008-12-03 | Method for improving plating product process of luminous diode structure |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544318B (en) * | 2012-01-04 | 2015-06-03 | 歌尔声学股份有限公司 | Light-emitting diode device |
| CN109065690A (en) * | 2018-07-18 | 2018-12-21 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303069A (en) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | Package for mounting light emitting element |
| CN101055971A (en) * | 2006-04-12 | 2007-10-17 | 南京Lg同创彩色显示系统有限责任公司 | Semiconductor laser discharge device |
| CN101231975A (en) * | 2007-01-26 | 2008-07-30 | 南茂科技股份有限公司 | Chip packaging body and method of manufacturing the same |
| KR20100004666A (en) * | 2008-07-04 | 2010-01-13 | (주) 아모엘이디 | Led package |
-
2008
- 2008-12-03 CN CN2008101845137A patent/CN101752470B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303069A (en) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | Package for mounting light emitting element |
| CN101055971A (en) * | 2006-04-12 | 2007-10-17 | 南京Lg同创彩色显示系统有限责任公司 | Semiconductor laser discharge device |
| CN101231975A (en) * | 2007-01-26 | 2008-07-30 | 南茂科技股份有限公司 | Chip packaging body and method of manufacturing the same |
| KR20100004666A (en) * | 2008-07-04 | 2010-01-13 | (주) 아모엘이디 | Led package |
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| CN101752470A (en) | 2010-06-23 |
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