CN102956792A

CN102956792A - Light emitting diode packaging structure

Info

Publication number: CN102956792A
Application number: CN2011102504377A
Authority: CN
Inventors: 林新强; 曾文良
Original assignee: Rongchuang Energy Technology Co ltd; Zhanjing Technology Shenzhen Co Ltd
Current assignee: Changshu Southeast High Tech Venture Service Co Ltd
Priority date: 2011-08-29
Filing date: 2011-08-29
Publication date: 2013-03-06
Anticipated expiration: 2031-08-29
Also published as: TW201310726A; TWI474521B; CN102956792B

Abstract

The invention relates to a light emitting diode packaging structure which comprises a substrate, an electrode, a light emitting diode chip and a packaging body, wherein the electrode is formed on the surface of the substrate, and the light emitting diode chip is arranged on the substrate and is electrically connected with the electrode. The packaging body covers the substrate and is used for packaging the light emitting diode chip inside the substrate. The packaging body comprises a body and a light scattering area surrounding the body. The body comprises a combination surface attached with the substrate and a light emitting surface opposite to the combination surface. The light scattering area is formed by scattered particles doped in the partial body, and the light scattering area is arranged around the light emitting diode chip.

Description

Package structure for LED

Technical field

The present invention relates to semiconductor structure, relate in particular to a kind of package structure for LED.

Background technology

When generally light-emitting diode (Light Emitting Diode, LED) encapsulating structure being used for the light source as down straight aphototropism mode set, usually require its bright dipping with wide light field, to reduce luminous point on the display screen and the generation of bright blanking bar.Be illustrated in figure 1 as a kind of package structure for LED 100 that produces wide light field, be formed with the lens 102 of a V-type at the top of this package structure for LED 100 exiting surface, these lens 102 with the part light refraction of light-emitting diode chip for backlight unit 103 outgoing around this package structure for LED 100, thereby produce wider light field.But because the top of this package structure for LED 100 also is formed with lens 102, so that its thickness and volume are larger, and cost of manufacture is also higher.

Summary of the invention

In view of this, be necessary to provide a kind of low cost and the frivolous package structure for LED with wide light field.

A kind of package structure for LED comprises substrate, electrode, light-emitting diode chip for backlight unit and packaging body.Described electrode is formed at substrate surface, and described light-emitting diode chip for backlight unit is positioned on the substrate, and is electrically connected with described electrode.This packaging body covers described substrate and coats in the inner section of described light-emitting diode chip for backlight unit.This packaging body comprises a body and regional around a light scattering of this body.This body comprises faying face and the exiting surface relative with faying face that is sticked with substrate.This light scattering zone is formed by doping scattering particles in the part body, and this light scattering zone is around described light-emitting diode chip for backlight unit setting.

In the above-mentioned package structure for LED, packaging body comprises a light scattering zone around this packaging body, be doped with the scattering particles of higher concentration in this light scattering zone, thereby can increase the scattering of light, increase the side direction bright dipping, promote the light field scope of this package structure for LED, simultaneously this light scattering zone is to form by doping scattering particles in packaging body, therefore can not increase thickness and the volume of this package structure for LED, cost of manufacture is also lower, thereby so that this package structure for LED can also satisfy low-cost and frivolous requirement when increasing the side direction bright dipping.

Description of drawings

Fig. 1 is a kind of package structure for LED schematic diagram of the prior art.

Fig. 2 is a kind of package structure for LED schematic diagram that first embodiment of the invention provides.

Fig. 3 is the vertical view of package structure for LED shown in Figure 2.

Fig. 4 is the distribution curve flux figure of package structure for LED shown in Figure 2.

Fig. 5 is a kind of package structure for LED schematic diagram that second embodiment of the invention provides.

Fig. 6 is a kind of package structure for LED schematic diagram that third embodiment of the invention provides.

The main element symbol description

Package structure for LED	100，10，20，30
		Lens	102
Substrate	11
		Upper surface	111
Lower surface	112
		Electrode	12
Light-emitting diode chip for backlight unit	103，13
		Plain conductor	131
Packaging body	14，24，34
		Body	141
Upper exiting surface	1411
		Faying face	1412
The light scattering zone	142
		The light diffusingsurface	1421
The side exiting surface	1422
		Scattering particles	143

Following embodiment further specifies the present invention in connection with above-mentioned accompanying drawing.

Embodiment

See also Fig. 2 and Fig. 3, one embodiment of the present invention provides a kind of package structure for LED 10, and it comprises substrate 11, electrode 12, light-emitting diode chip for backlight unit 13 and packaging body 14.

Substrate 11 is a rectangular flat, in order to carry described electrode 12, light-emitting diode chip for backlight unit 13 and packaging body 14 thereon on the surface.Described substrate 11 comprises upper surface 111 and lower surface 112 relative with upper surface 111 and that be parallel to each other.Described substrate 11 materials are PPA(Polyphthalamide, polyvinyl acetate) etc.Understandable, the length on described substrate 11 each limit can be identical or different, and further, the shape of described substrate 11 is not limited to rectangle, and its shape can also be for circle etc.

Electrode 12 is formed at the surface of described substrate 11, and this electrode 12 is at least two, and electrically insulated from one another between each electrode 12.Described electrode 12 extends to lower surface 112 from the upper surface 111 of described substrate 11 respectively.Described electrode 12 used materials are preferably metal material of electric conductivity, such as one or more the alloy in gold, silver, copper, platinum, aluminium, nickel, tin or the magnesium.

Light-emitting diode chip for backlight unit 13 is attached on one of them described electrode 12.Described light-emitting diode chip for backlight unit 13 is electrically connected respectively by plain conductor 131 and described electrode 12.Understandable, this light-emitting diode chip for backlight unit 13 also can adopt to cover on the electrode 12 that brilliant mode is fixed in substrate 11 surfaces and with described electrode 12 and be electrically connected.

Packaging body 14 is formed on the upper surface 111 of described substrate 11, covers described electrode 12 and is positioned at the part of described upper surface 111, and coat described light-emitting diode chip for backlight unit 13 and plain conductor 131.Described packaging body 14 can be lens, also can be packaging plastic.This packaging body 14 comprises the body 141 that covers described light-emitting diode chip for backlight unit 13 and is positioned at body 141 away from the light scattering zone 142 of a side peripheral part of light-emitting diode chip for backlight unit 13.This body 141 roughly is the hemisphere shape, comprises the upper exiting surface 1411 of arc and the faying face 1412 that mutually is sticked with the upper surface of substrate 11.This light scattering zone 142 comprises the ring light diffusingsurface 1421 that is positioned at exiting surface 1411 peripheral parts and extends to downward vertically and substrate 11 side exiting surfaces 1422 connected vertically from the outer peripheral edges of light diffusingsurface 1421.Described light scattering zone 142 is covered in the outer peripheral edge portion of this body 141.Described light scattering zone 142 in the form of a ring.The peripheral part of the rising angle of described light scattering zone 142 corresponding described light-emitting diode chip for backlight unit 13.In the present embodiment, the scope between 45 ° to 90 ° of the rising angle of these light scattering zone 142 corresponding described light-emitting diode chip for backlight unit 13.The thickness in this light scattering zone 142 increases to the junction of described smooth diffusingsurface 1421 with described side exiting surface 1422 respectively gradually from the junction of described smooth diffusingsurface 1421 with upper exiting surface 1411.This light scattering zone 142 is doped in packaging body 14 interior formation by scattering particles 143; wherein; the doping content of these light scattering zone 142 inscattering particles 143 is higher than the doping content of the scattering particles 143 in the described body 141, and described scattering particles 143 is any one in titanium dioxide granule or the silicon oxide particle.Described packaging body 14 is interior can also to comprise the fluorescence transition material, and this fluorescent transition material can be garnet-base fluorescent material, silicate-base fluorescent material, orthosilicate base fluorescent powder, sulfide base fluorescent powder, thiogallate base fluorescent powder and nitride based fluorescent material.

During this package structure for LED 10 work, light-emitting diode chip for backlight unit 13 emits beam, shown in the arrow among Fig. 2, the light that is positioned at the middle body of these light-emitting diode chip for backlight unit 13 rising angles penetrates from upper exiting surface 1411 after wearing and penetrating body 141, be positioned at the light penetration body 141 rear directive light scattering zones 142 of peripheral part of the rising angle of light-emitting diode chip for backlight unit 13, owing to be doped with the scattering particles 143 of high concentration in this light scattering zone 142, light is penetrated from side exiting surface 1422 by the rear major part of scattering particles 143 refractions in the light scattering zone 142, thereby increase the range of exposures of this package structure for LED 10, form wide light field.See also Fig. 4, the distribution curve flux figure of the package structure for LED 10 that provides for the above-mentioned execution mode of the present invention, owing to be formed with above-mentioned light scattering zone 142 on this package structure for LED 10, as can be seen from the figure this package structure for LED 10 is stronger to the bright dipping of the direction of both sides, increase the side direction bright dipping, thereby promoted the light field scope of this package structure for LED 10.

See also Fig. 5, be the package structure for LED 20 that the second embodiment of the present invention provides, the difference of the package structure for LED 10 of itself and the first embodiment is: scattering particles 143 undopes in the packaging body 24 of this package structure for LED 20.

See also Fig. 6, the package structure for LED 30 that provides for the third embodiment of the present invention, the difference of the package structure for LED 10 of itself and the first embodiment is: the light scattering zone 142 of this package structure for LED 30 is positioned at packaging body 34 inside, between the exiting surface of described light-emitting diode chip for backlight unit 13 and packaging body 34.

The package structure for LED 10 that embodiment of the present invention provides, in 20 and 30,

packaging body

14,24 and 34 comprise the light scattering zone 142 of the peripheral part of the exiting surface that is covered in this packaging body, can increase the scattering of light, increase the side direction bright dipping, thereby promote this package structure for

LED

10,20 and 30 light field scope, this package structure for LED 10 of while, 20 and 30 only can reach above-mentioned effect by mixing in

packaging body

14,24 and 34, therefore can not increase this package structure for

LED

10,20 and 30 thickness and volume, cost of manufacture is also lower, thereby so that this package structure for

LED

10,20 and 30 can also satisfy low-cost and frivolous requirement when increasing the side direction bright dipping.

Be understandable that, for the person of ordinary skill of the art, can make other various corresponding changes and distortion by technical conceive according to the present invention, and all these change the protection range that all should belong to claim of the present invention with distortion.

Claims

1. package structure for LED, comprise substrate, electrode, light-emitting diode chip for backlight unit and packaging body, described electrode is formed at substrate surface, described light-emitting diode chip for backlight unit is positioned on the substrate, and be electrically connected with described electrode, this packaging body covers described substrate and coats in the inner section of described light-emitting diode chip for backlight unit, it is characterized in that, this packaging body comprises a body and regional around a light scattering of this body, this body comprises faying face and the exiting surface relative with faying face that is sticked with substrate, this light scattering zone is formed by doping scattering particles in the part body, and this light scattering zone is around described light-emitting diode chip for backlight unit setting.

2. package structure for LED as claimed in claim 1 is characterized in that: doping scattering particles in the described body, but the doping content of described light scattering zone inscattering particle is higher than the doping content of body inscattering particle.

3. package structure for LED as claimed in claim 1, it is characterized in that: described light scattering zone is positioned near the described exiting surface.

4. package structure for LED as claimed in claim 1 is characterized in that: described light scattering zone is scope between 45 ° to 90 ° at the rising angle of described light-emitting diode chip for backlight unit.

5. package structure for LED as claimed in claim 4, it is characterized in that: described light scattering zone in the form of a ring.

6. package structure for LED as claimed in claim 5, it is characterized in that: the thickness in this light scattering zone increases to the junction of described smooth diffusingsurface and described side exiting surface respectively gradually from the junction of described smooth diffusingsurface and upper exiting surface.

7. package structure for LED as claimed in claim 1, it is characterized in that: described scattering particles is any one in titanium dioxide granule or the silicon oxide particle.

8. package structure for LED as claimed in claim 3, it is characterized in that: described body roughly is the hemisphere shape, and described light scattering zone is covered in the outer peripheral edge portion of this body.

9. such as each described package structure for LED of claim 1 to 8, it is characterized in that: described packaging body is lens or packaging plastic.

10. such as each described package structure for LED of claim 1 to 8, it is characterized in that: described light-emitting diode chip for backlight unit is fixed in substrate surface by pasting or covering brilliant mode.