KR101616474B1 - Package for Light Emitting Device and Method for Manufacturing thereof - Google Patents

Package for Light Emitting Device and Method for Manufacturing thereof Download PDF

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Publication number
KR101616474B1
KR101616474B1 KR1020140138412A KR20140138412A KR101616474B1 KR 101616474 B1 KR101616474 B1 KR 101616474B1 KR 1020140138412 A KR1020140138412 A KR 1020140138412A KR 20140138412 A KR20140138412 A KR 20140138412A KR 101616474 B1 KR101616474 B1 KR 101616474B1
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KR
South Korea
Prior art keywords
light emitting
emitting diode
phosphor layer
circuit board
gold wire
Prior art date
Application number
KR1020140138412A
Other languages
Korean (ko)
Other versions
KR20160043779A (en
Inventor
민재식
장재영
이재엽
조병구
Original Assignee
(주)라이타이저코리아
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Application filed by (주)라이타이저코리아 filed Critical (주)라이타이저코리아
Priority to KR1020140138412A priority Critical patent/KR101616474B1/en
Publication of KR20160043779A publication Critical patent/KR20160043779A/en
Application granted granted Critical
Publication of KR101616474B1 publication Critical patent/KR101616474B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A light emitting device package according to the present invention comprises a circuit board on which a bonding pad is formed, a light emitting diode device which is provided with a chip pad on an upper surface thereof, A phosphor layer formed in a cap shape so as to surround the side surface and the upper surface of the light emitting diode, the thickness of the side portion being uniform and the thickness of the upper portion being uniform, a chip pad of the light emitting diode device electrically connected to the bonding pad of the circuit substrate And a filler filling a space between the phosphor layer and the light emitting diode device, wherein the gold wire is disposed between the lower surface of the phosphor layer and the circuit board.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device package,

The present invention relates to a light emitting device package and a method of manufacturing the same. More particularly, the present invention relates to a light emitting device package including a light emitting diode package and a light emitting diode package, By disposing a gold wire electrically connecting the circuit board and the light emitting diode device on the bottom surface of the layer, it is possible to effectively increase the directivity angle of the light source emitted from the light emitting diode device and to effectively suppress the hot spot phenomenon Device package and a method of manufacturing the same.

Recently, a light emitting device in which Ga or Al is doped with Al or In has been attracting attention due to its long lifetime, low power consumption, excellent brightness and environmental friendliness that are not harmful to the human body, as compared with conventional incandescent lamps. More and more.

Such a light emitting device has been used for automobile lighting, a traffic signal, and a backlight unit (BLU) of a liquid crystal display device due to the advantages described above.

Recently, the MacAdam Rule has been proposed as an index for evaluating whether the color coordinates measured in the artificial light source are the same as the color coordinates when viewed with human eyes. These MacAdam Rule provides a four-step criteria. In the Americas, artificial light sources that do not meet the MacAdam Rule's three-step criteria are not allowed to be sold. In order to satisfy the three steps of MacAdam Rule, it is very important to reduce the color deviation of white light.

Korean Patent Laid-Open Publication No. 10-2008-0070193 discloses a fluorescent film on which a fluorescent substance is formed on the film surface of a resin material. When the above-mentioned fluorescent film is attached to a light emitting diode device, It is difficult to reduce the color deviation of the white light because of the electrostatic force or the adhesive force between the light emitting diode and the fluorescent film due to the electrostatic force or the adhesive force.

In addition, a light emitting diode element employing the above-mentioned fluorescent film uses a lead frame, which has a limited light emitting region due to reflection of a wall surface of the lead frame, and thus has a narrow directivity angle and a hot spot phenomenon in which brightness is concentrated .

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art, and it is an object of the present invention to provide a light emitting diode device, which is formed in a cap shape so as to surround a side surface and an upper surface of the light emitting diode device, A gold wire that electrically connects the circuit board and the light emitting diode device is disposed on the lower surface of the phosphor layer formed uniformly in the thickness direction of the light emitting diode device, thereby effectively increasing the directivity angle of the light source emitted from the light emitting diode device, Emitting device package capable of effectively suppressing light emission.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting device package capable of easily manufacturing the light emitting device package.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not intended to limit the invention to the precise forms disclosed. Other objects, which will be apparent to those skilled in the art, It will be possible.

According to an aspect of the present invention, there is provided a light emitting device package including a circuit board on which a bonding pad is formed, a chip pad provided on a top surface of the circuit board, A phosphor layer formed in a cap shape so as to surround and enclose the side surface and the upper surface of the light emitting diode element, the phosphor layer having a uniform thickness on the side and a thickness on the top, A gold wire electrically connecting a bonding pad and a chip pad of the light emitting diode device; and a filler filling a space between the phosphor layer and the light emitting diode device, the gold wire being interposed between the lower surface of the phosphor layer and the circuit board, Can be disposed.

In the light emitting device package according to an embodiment of the present invention, the phosphor layer may be formed of a phosphor and silicon.

In the light emitting device package according to an embodiment of the present invention, the filler may be formed of silicon.

In the light emitting device package according to an embodiment of the present invention, the interval between the upper surface of the light emitting diode and the phosphor layer may be 10 μm to 500 μm.

In the light emitting device package according to an embodiment of the present invention, the interval between the side surface of the light emitting diode and the phosphor layer may be 10 μm to 500 μm.

According to another aspect of the present invention, there is provided a method of fabricating a light emitting device package, the method comprising: providing a light emitting diode device having a chip padding on a top surface thereof, Bonding the bonding pad of the circuit board and the chip pad of the light emitting diode device by wire bonding with a gold wire, dipping a liquid filler on the light emitting diode device, The phosphor layer is formed on the upper portion of the light emitting diode to which the filler is doped and the gold wire while the pressure is applied to the phosphor layer formed in a cap shape and having the thickness of the side portion and the thickness of the upper portion uniformly formed, The gold wire is surrounded by the lower surface of the phosphor layer and the upper surface of the phosphor layer, Arranging the phosphor layers so as to be disposed between the light emitting diode elements, and arranging the phosphor layers so as to be disposed between the light emitting diode elements and the light emitting diode elements; And baking the liquid filler lying between the phosphor layers.

In the method of manufacturing a light emitting device package according to an embodiment of the present invention, the phosphor layer may be formed of a phosphor and silicon.

In the method of manufacturing a light emitting device package according to an embodiment of the present invention, the liquid filler may be silicon.

In the method of manufacturing a light emitting device package according to an embodiment of the present invention, the distance between the upper surface of the light emitting diode and the phosphor layer may be 10 to 500 μm.

In the method of manufacturing a light emitting device package according to an embodiment of the present invention, the gap between the side surface of the light emitting diode and the phosphor layer may be 10 μm to 500 μm.

The light emitting device package according to the embodiments of the present invention is formed in a cap shape so as to surround the side surface and the upper surface of the light emitting diode device so as to surround the side surface and the upper surface of the light emitting diode device, By disposing the gold wire electrically connecting the substrate and the light emitting diode device, the hot spot phenomenon can be effectively suppressed while effectively increasing the directivity angle of the light source emitted from the light emitting diode device.

In the method of manufacturing a light emitting device package according to embodiments of the present invention, a gold wire for electrically connecting a circuit board and a light emitting diode device is disposed on the lower surface of the above-mentioned phosphor layer, thereby effectively reducing the process steps, Can be improved.

1 is a cross-sectional view of a light emitting device package according to an embodiment of the present invention;
2A to 2C are cross-sectional views illustrating a detailed process of the light emitting device package of FIG.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

1, the light emitting device package includes a light emitting diode device 200, a circuit substrate 100, a phosphor layer 300, gold wires 510 and 520, and a filler 400, As shown in FIG.

The circuit board 100 is formed with bonding pads 121 and 122. The light emitting diode device 200 provides light of a predetermined wavelength and chip pads 210 and 220 are formed on the top surface thereof. Here, the light emitting diode device 200 may be a light emitting diode device 200 providing light of a blue wavelength or a light emitting diode device 200 providing light of a ultraviolet wavelength.

The phosphor layer 300 is formed in a cap shape so as to surround the side surface and the upper surface of the light emitting diode device 200. The thickness of the side portion and the thickness of the upper portion are uniformly formed, The light emitted from the light emitting diode device 200 is converted into white light by changing the wavelength of light emitted from the side surface or the top surface of the light emitting diode device 200. Here, the phosphor layer 300 is formed of a phosphor, silicon, or the like.

The gold wires 510 and 520 electrically connect the bonding pads 121 and 122 of the circuit board 100 to the chip pads 210 and 220 of the light emitting diode device 200, The gold wires 510 and 520 are disposed between the phosphor layer 300 and the circuit board 100 and the filler 400 fills a space between the phosphor layer 300 and the LED 200, .

Here, the interval t between the upper surface of the light emitting diode and the phosphor layer 300 is 10 占 퐉 to 500 占 퐉, and the interval g between the side surface of the light emitting diode and the phosphor layer 300 is 10 占 퐉 to 500 占 퐉 .

The light emitting device package according to embodiments of the present invention includes a phosphor layer 300 formed in a cap shape so as to surround the side surface and the upper surface of the light emitting diode device 200, The gold wires 510 and 520 for electrically connecting the circuit board 100 and the light emitting diode device 200 are arranged on the lower surface of the light emitting diode device 200 so that the directivity angle of the light source emitted from the light emitting diode device 200 is effectively increased It is possible to effectively suppress the hot spot phenomenon.

Hereinafter, a method of manufacturing a light emitting diode package according to an embodiment of the present invention will be described with reference to FIGS. 2A to 2C.

First, as shown in FIG. 2A, a light emitting diode device 200 in which light of a predetermined wavelength region is provided and chip pads 210 and 220 are formed on an upper surface thereof is formed by bonding pads 121 and 122 On the circuit board (100). Here, the light emitting diode element 200 is mounted on the circuit board 100 using the silver paste 250.

2B, the bonding pads 121 and 122 of the circuit board 100 and the chip pads 210 and 220 of the light emitting diode device 200 are connected to gold wires 510 and 520, respectively, Bonding.

Next, a liquid filler 400 is applied to the upper portion of the light emitting diode device 200, and a cap (not shown) is formed on the upper portion of the LED and the gold wires 510 and 520 to which the filler 400 is applied. the phosphor layer 300 is surrounded by the side surface and the upper surface of the light emitting diode device 200 while applying pressure to the phosphor layer 300 formed in the shape of a cap and having the thickness of the side portion and the thickness of the upper portion uniformly formed. And the phosphor layers 300 are arranged such that the gold wires 510 and 520 are disposed between the lower surface of the phosphor layer 300 and the circuit board 100.

Next, as shown in FIG. 2C, a light emitting diode device 200 mounted on the circuit board 100, a phosphor layer 300 spaced apart from a side surface and the upper surface of the light emitting diode device 200, Gold wires 510 and 520 and a liquid filler 400 placed between the light emitting diode device 200 and the phosphor layer 300 are baked.

A method of manufacturing a light emitting device package according to embodiments of the present invention includes gold wires 510 and 520 for electrically connecting a circuit board 100 and a light emitting diode device 200 to a lower surface of the phosphor layer 300, The process yield can be effectively improved while effectively reducing the processing steps.

 While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments.

On the contrary, those skilled in the art will appreciate that many modifications and variations of the present invention are possible without departing from the spirit and scope of the appended claims.

Accordingly, all such appropriate modifications and changes, and equivalents thereof, should be regarded as within the scope of the present invention.

100: circuit board
121, 122: bonding pads
200: Light emitting diode element
210, 220: chip pad
300: phosphor layer
400: filler
510, 520: Gold wire

Claims (10)

A circuit board on which a bonding pad is formed;
A light emitting diode element provided with a chip pad on an upper surface thereof and bonded to an upper surface of the circuit board,
A phosphor layer formed in a cap shape so as to surround the side surface and the upper surface of the light emitting diode and spaced apart from each other;
A gold wire electrically connecting the bonding pad of the circuit board and the chip pad of the light emitting diode device; And
And a filler filling a space between the phosphor layer and the light emitting diode,
Wherein the gold wire is press-bonded to the phosphor layer on the gold wire while being wire-bonded to the chip pad, and the gold wire is disposed between the lower surface of the phosphor layer and the circuit board.
The method according to claim 1,
Wherein the phosphor layer is formed of a phosphor and silicon.
The method according to claim 1,
Wherein the filler is made of silicon.
The method according to claim 1,
Wherein a distance between an upper surface of the light emitting diode and the phosphor layer is 10 占 퐉 to 500 占 퐉.
The method according to claim 1,
Wherein a distance between a side surface of the light emitting diode and the phosphor layer is 10 占 퐉 to 500 占 퐉.
Mounting a light emitting diode device having a chip pad on an upper surface thereof on a circuit board on which a bonding pad is formed,
Wire bonding the bonding pads of the circuit board and the chip pads of the light emitting diode devices with gold wires;
A liquid filler is applied to the upper portion of the light emitting diode device, and a cap is formed on the upper portion of the light emitting diode where the liquid filler is doped and the gold wire, and the thickness of the side portion and the thickness of the upper portion are uniformly formed Arranging the phosphor layer so that the phosphor layer surrounds the side surface and the upper surface of the light emitting diode while the pressure is applied to the phosphor layer and the gold wire is disposed between the lower surface of the phosphor layer and the circuit board ; And
A light emitting diode device mounted on the circuit board, a phosphor layer surrounding and enclosing the side surface and the upper surface of the light emitting diode device, baking the gold wire and a liquid filler lying between the light emitting diode device and the phosphor layer / RTI >
Wherein the gold wire is press-bonded to the phosphor layer on the gold wire while being wire-bonded to the chip pad, and the gold wire is disposed between the lower surface of the phosphor layer and the circuit board.
The method according to claim 6,
Wherein the phosphor layer is formed of a phosphor and silicon.
The method according to claim 6,
Wherein the liquid filler is silicon.
The method according to claim 6,
And the interval between the upper surface of the light emitting diode and the phosphor layer is 10 to 500 mu m.
The method according to claim 6,
Wherein a distance between the side surface of the light emitting diode and the phosphor layer is 10 to 500 mu m.
KR1020140138412A 2014-10-14 2014-10-14 Package for Light Emitting Device and Method for Manufacturing thereof KR101616474B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020140138412A KR101616474B1 (en) 2014-10-14 2014-10-14 Package for Light Emitting Device and Method for Manufacturing thereof

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Application Number Priority Date Filing Date Title
KR1020140138412A KR101616474B1 (en) 2014-10-14 2014-10-14 Package for Light Emitting Device and Method for Manufacturing thereof

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KR20160043779A KR20160043779A (en) 2016-04-22
KR101616474B1 true KR101616474B1 (en) 2016-05-12

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