US20120194067A1 - Led device - Google Patents
Led device Download PDFInfo
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- US20120194067A1 US20120194067A1 US13/447,129 US201213447129A US2012194067A1 US 20120194067 A1 US20120194067 A1 US 20120194067A1 US 201213447129 A US201213447129 A US 201213447129A US 2012194067 A1 US2012194067 A1 US 2012194067A1
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- Prior art keywords
- light
- receiving space
- led device
- emitting chip
- phosphor layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Definitions
- the present invention relates to a LED device and a packaging method thereof.
- the present invention relates to a LED device with high package efficiency and a stable color uniformity of the light emitted by the LED device, and a packaging method thereof.
- LEDs have a numerous merits, such as small dimension, light weight, fast response, low power consumption, etc, and may be used as the light source of indicators, or displays, as well as other applications. Recently, white-light LEDs have been developed to be used as a light source to replace the tungsten lamp or fluorescent tube.
- FIG. 1 which is a white-light LED of the prior art.
- a light-emitting chip 12 is located at the bottom of a concave portion 111 of a base 11 and a phosphor layer 13 is filled into the concave portion 111 to cover the light-emitting chip 12 .
- the phosphor powder 131 distributed in the phosphor layer 13 part of blue light emitted from the light-emitting chip 12 is converted into yellow light so that the yellow light and the unconverted blue light are mixed to form white light.
- the white light emitted from the white-light LED may be shifted toward blue light or yellow light in some directions. Because the light path of the light beam L 1 emitted from the top surface of the light-emitting chip 12 and the light beam L 2 emitted from the side surface of the light-emitting chip 12 in the phosphor layer 13 are longer, the light beams L 1 , L 2 may be converted into yellow light by the phosphor layer 13 . Therefore, the light beam emitted from the side surface of the light-emitting chip 12 will be yellow-like so that the color uniformity of the light emitted by the white-light LED would be shifted toward yellow.
- One particular aspect of the present invention is to provide a LED device having high package efficiency and uniform color of the light emitted by the LED device.
- Another particular aspect of the present invention is to provide a packaging method for a LED device with low-cost.
- the packaging method can be in widespread use to assure that the LED device include a high package efficiency and a good color uniformity of the light emitted by the LED device.
- the LED device includes a base structure, a light-emitting chip, an encapsulating structure, and a phosphor layer.
- the base structure has a receiving space.
- the receiving space is defined by an inner bottom surface of the base structure and an inner side wall surrounding the inner bottom surface of the base structure.
- the light-emitting chip is mounted on the bottom of the receiving space.
- the encapsulating structure is filled into the receiving space to cover the light-emitting chip.
- the phosphor layer is formed on the encapsulating structure.
- the dimension of the phosphor layer is more than the dimension of the receiving space and less than 1.5 times the dimension of the receiving space, so as to mount on the top surface of the base structure.
- the light paths of the light beam passing through the phosphor layer are substantially equal.
- the color of the light could be uniform.
- the phosphor layer can be made thinner thereby decreasing loss of the light power and increasing the overall effective package efficiency of light.
- the dimension of the phosphor layer is greater than that of the receiving space and thus the phosphor layer can fully cover the lighting area of the light-emitting chip so that light leakage can be avoided.
- the color of the light emitted in various angles is substantially same so as color uniformity would be better and the light-emitting view angle would be increased.
- FIG. 1 is a schematic diagram of a LED according to the prior art
- FIG. 2 is a flow chart of the packaging method for a LED device according to a first embodiment of the present invention
- FIG. 3A is a schematic diagram of a step S 1 in the packaging method for a LED device according to the first embodiment of the present invention
- FIG. 3B is a schematic diagram of a step S 1 in the packaging method for a LED device according to a second embodiment of the present invention.
- FIG. 4 is a schematic diagram of a step S 2 in the packaging method for a LED device according to the first embodiment of the present invention
- FIG. 5 is a schematic diagram of step S 3 of the packaging method for a LED device according to the first embodiment of the present invention.
- FIG. 6A is a schematic diagram of a step S 4 in the packaging method for a LED device according to the first embodiment of the present invention.
- FIG. 6B is a schematic diagram of a step S 4 in the packaging method for a LED device according to the second embodiment of the present invention.
- FIG. 7A is a schematic diagram of the LED device according to the first embodiment of the present invention.
- FIG. 7B is a schematic diagram of the LED device according to the second embodiment of the present invention.
- the LED device 200 includes a base structure 20 , a light-emitting chip 22 , an encapsulating structure 24 and a phosphor layer 28 .
- the base structure 20 has a receiving space 202 .
- the receiving space 202 is defined by an inner bottom surface 2022 of the base structure 20 and an inner side wall 2021 surrounding the inner bottom surface 2022 .
- the light-emitting chip 22 is mounted on the bottom of the receiving space 202 (i.e. the inner bottom surface 2022 of the base structure 20 ). In a preferred embodiment, the light-emitting chip 22 is mounted on a geometrical center of the receiving space 202 .
- the inner side wall 2021 of the base structure 20 is substantially parallel to surrounding the edge of the light-emitting chip 22 , preferably. That is to say, the inner side wall 2021 of the base structure 20 is an upright inner side surface around the edge of the inner bottom surface 2022 , when the side surface of the light-emitting chip 22 is vertical to the bottom surface of the light-emitting chip 22 .
- the encapsulating structure 24 including an encapsulating material 241 and a thinner macromolecule layer 242 is formed in the receiving space 202 to cover the light-emitting chip 22 , i.e. including the top surface and the side surfaces of the light-emitting chip 22 .
- the encapsulating structure 24 is fully filled into the receiving space 202 of the base structure 20 to form a plat upper surface. That is to say, the upper surface of the encapsulating structure 24 and the top surface 201 of the base structure 20 are approximately level with each other.
- the phosphor layer 28 is formed on the encapsulating structure 24 .
- the dimension (i.e. length/width d shown in FIG. 6A ) of the phosphor layer 28 in the lateral direction is greater than that of of the receiving space 202 (i.e. length/width d′ in FIG. 6A ) and preferably smaller than 1.5 times the dimension of the receiving space 202 .
- the edge 281 of the phosphor layer 28 is mounted on the top surface 201 of the base structure 20 .
- the base structure 20 further includes a conduct structure 203 electrically connected the light-emitting chip 22 with an external electrical power.
- the light-emitting chip 22 is electrically connected to the conduct structure 203 within the base structure 20 by wire bonding. That is to say, the light-emitting chip 22 can be electrically connected to positive and negative conduct elements 2031 , 2032 of the conduct structure 203 via connection wires 221 , 222 , respectively.
- the phosphor layer 28 is a phosphor powder paste flake or a layer with a macromolecule material and phosphor powder, and its thickness is uniform.
- the encapsulating structure 24 is glue, such as epoxide, silicone, or other macromolecule compounds with a long chain structure.
- the light-emitting chip 22 can emits light beam with a wavelength from UV to IR.
- the base structure 20 is stacked by a multi-layer ceramic.
- FIG. 7B is a LED device 200 according to the second embodiment of the present invention.
- the LED device of the second embodiment is similar to that of the first embodiment.
- the difference between the first and second embodiments is that the light-emitting chip 22 is formed in the receiving space 202 of the base structure 20 by flip chip bonding and the light-emitting chip 22 is electrically connected to the positive and negative conduct elements 2031 , 2032 of the conduct structure 203 via solder pads 225 , 226 .
- a packaging method for a LED device is provided (as shown in FIG. 2 ) and includes the following steps.
- Step 51 is a step of providing a base having a receiving space and mounting a light-emitting chip on the bottom of the receiving space.
- Step S 2 is a step of injecting an encapsulating material such as a transparent packaging glue into the receiving space of the base to cover the top surface and the side surfaces of the light-emitting chip and then solidifying the encapsulating material.
- an encapsulating material such as a transparent packaging glue
- Step S 3 is a step of injecting a thinner macromolecule layer on the solidified encapsulating material.
- Step S 4 is a step of forming a phosphor layer formed on the thinner macromolecule layer, in which the dimension of the phosphor layer is greater than the dimension of the receiving space, so that the edge of the phosphor layer is mounted on the top surface of the base.
- the base structure 20 includes a receiving space 202 .
- the receiving space 202 is defined by an inner bottom surface 2022 of the base structure 20 and an inner side wall 2021 surrounding the edge of the inner bottom surface 2022 .
- the light-emitting chip 22 is mounted on the inner bottom surface 2022 of the base structure 20 within the receiving space 202 .
- the light-emitting chip 22 is electrically connected with the positive and negative conduct elements 2031 , 2032 of the conduct structure 203 via the connection wires 221 , 222 so as to connect an external electric power for obtaining power to light the light-emitting chip 22 .
- a base structure 20 is provided.
- the base structure 20 has a receiving space 202 .
- the receiving space 202 is defined by an inner bottom surface 2022 of the base structure 20 and an inner side wall 2021 surrounding the edge of the inner bottom surface 2022 .
- a light-emitting chip 22 is mounted on the receiving space 202 of the base structure 20 by flip chip bonding and electrically connected with the positive and negative conduct elements 2031 , 2032 of the conduct structure 203 via the solder pads 225 , 226 so as to connect an external electric power for obtaining power to light the light-emitting chip 22 .
- the packaging method can be applied to both the flip chip bonding type of LED and the wire bonding type of LED.
- an injection device 3 is used for injecting the encapsulating material 241 into the receiving space 202 of the base structure 20 to allow the encapsulating material 241 to cover the top surface and the side surfaces of the light-emitting chip 22 .
- the encapsulating material 241 is fully filled in the receiving space 202 .
- the encapsulating material 241 is solidified.
- the encapsulating material 241 can be epoxide, silicone, or other macromolecule compounds with a long chain structure.
- the encapsulating material 241 is silicone, preferably.
- a thinner macromolecule layer 242 is injected on the encapsulating material 241 .
- the material of the thinner macromolecule layer 242 could be the same as the encapsulating material 241 so that it can be epoxide, silicone, or other macromolecule compounds with a long chain structure.
- the thickness of the thinner macromolecule layer 242 is smaller than the height of the receiving space 202 or the height of the structure defined by the encapsulating material 241 .
- the thinner macromolecule layer 242 is silicone, preferably.
- the encapsulating material 241 may shrink.
- the thinner macromolecule layer 242 would be used for filling this non-smooth top surface of the solidified encapsulating material 241 .
- an approximate smooth top surface of the encapsulating structure 24 composed of the encapsulating material 241 and the thinner macromolecule layer 242 can be provided.
- the step S 3 can be omitted.
- the encapsulating structure 24 will be only formed of the encapsulating material 241 .
- the phosphor layer 28 can be easily pasted.
- the phosphor powder flake in the prior art does not fully cover the surface of the chip and the blue light is emitted from the side of the chip whereby a non-uniform chromaticity for the prior LED device is generated.
- the problem can be overcome by the thinner macromolecule layer 242 to make the surface of the encapsulating structure 24 more smooth and sticky. Further, it is easy to paste the phosphor layer 28 and the encapsulating structure 24 in the step S 4 , and the non-uniform chromaticity can be avoided.
- the thinner macromolecule layer 242 is also used for leveling the upper surface of the encapsulating structure 24 and the top surface 201 of the base structure 20 , and thus the step S 4 could be implemented easily.
- the thickness of the thinner macromolecule layer 242 is smaller than the thickness of the phosphor layer 28 , preferably.
- a pick-up device 4 is used for picking up a phosphor powder flake 28 to be pasted onto the thinner macromolecule layer 242 .
- the shape of the phosphor powder flake 28 could correspond to the shape of the inner bottom portion 2022 of the receiving space 202 .
- the phosphor powder flake 28 is also rectangular.
- the length d of the phosphor powder flake 28 is larger than the length d′ of the inner bottom portion 2022 of the receiving space 202 and the width of the phosphor powder flake 28 is also larger than the width of the inner bottom portion 2022 of the receiving space 202 .
- the edge 281 of the phosphor powder flake 28 is mounted on the top surface 201 of the base structure 20 so that the phosphor powder flake 28 fully covers the receiving space 202 .
- the step S 4 also can be implemented by the injection way.
- a macromolecule material with phosphor powder is injected on the thinner macromolecule layer 242 by an injection device 3 to form a phosphor layer 28 , and the dimension of the phosphor layer is more than that of the receiving space 202 so that the edge 281 of the phosphor powder flake 28 can be mounted on the top surface 201 of the base structure 20 to fully cover the receiving space 202 .
- a step of solidifying the thinner macromolecule layer 242 is provided.
- This solidifying process is the same as the step S 2 of solidifying the encapsulating material 241 .
- the solidifying process is a curing process.
- the LED device 200 By applying the steps S 1 ⁇ S 4 , the LED device 200 , as shown in FIG. 7A or 7 B would be packaged.
- the light-emitting chip 22 of the LED device 200 is mounted on the inner bottom surface 2022 of the receiving space 202 of the base structure 20 .
- the top surface and the side surfaces of the light-emitting chip 22 are covered with an encapsulating structure 24 .
- the phosphor layer 28 is formed on the encapsulating structure 24 . Therefore, the light paths in the phosphor layer 28 are equal so that the color of the light emitted by the LED device 200 is uniform. Further, the thickness of the phosphor layer 28 can be reduced so that the light loss is reduced and the package efficiency is enhanced.
- the dimension of the phosphor layer 28 is more than the dimension of the receiving space 202 and the edge of the phosphor layer 28 is mounted on the top surface 201 of the base structure 20 so that the phosphor layer 28 fully covers the light-emitting area of the light-emitting chip 22 , whereby the light leakage can be avoided.
- the color of the light emitted by the LED device 200 is uniform and the light-emitting view angle is wide.
- the packaging method also can be applied to a general LED, such as a wire bonding type of LED. It is easy to implement the packaging method by using the injection way, and its cost is low. Moreover, by using two steps of injection processes and two steps of solidifying processes to from the encapsulating structure, the phosphor layer can be easily pasted to avoid generating air bubbles and a non-uniform color. Therefore, the present packaging method can be applied to a variety of LEDs and includes low cost. The package efficiency of the present LED device could be high, the color thereof is uniform and the light-emitting view angle thereof is wide.
Abstract
Description
- The present invention relates to a LED device and a packaging method thereof. In particular, the present invention relates to a LED device with high package efficiency and a stable color uniformity of the light emitted by the LED device, and a packaging method thereof.
- LEDs have a numerous merits, such as small dimension, light weight, fast response, low power consumption, etc, and may be used as the light source of indicators, or displays, as well as other applications. Recently, white-light LEDs have been developed to be used as a light source to replace the tungsten lamp or fluorescent tube.
- As shown in
FIG. 1 , which is a white-light LED of the prior art. A light-emittingchip 12 is located at the bottom of aconcave portion 111 of abase 11 and aphosphor layer 13 is filled into theconcave portion 111 to cover the light-emittingchip 12. By utilizing thephosphor powder 131 distributed in thephosphor layer 13, part of blue light emitted from the light-emittingchip 12 is converted into yellow light so that the yellow light and the unconverted blue light are mixed to form white light. - However, the white light emitted from the white-light LED may be shifted toward blue light or yellow light in some directions. Because the light path of the light beam L1 emitted from the top surface of the light-emitting
chip 12 and the light beam L2 emitted from the side surface of the light-emittingchip 12 in thephosphor layer 13 are longer, the light beams L1, L2 may be converted into yellow light by thephosphor layer 13. Therefore, the light beam emitted from the side surface of the light-emittingchip 12 will be yellow-like so that the color uniformity of the light emitted by the white-light LED would be shifted toward yellow. - One particular aspect of the present invention is to provide a LED device having high package efficiency and uniform color of the light emitted by the LED device.
- Another particular aspect of the present invention is to provide a packaging method for a LED device with low-cost. The packaging method can be in widespread use to assure that the LED device include a high package efficiency and a good color uniformity of the light emitted by the LED device.
- To achieve the above-mentioned purposes, a LED device is provided. The LED device includes a base structure, a light-emitting chip, an encapsulating structure, and a phosphor layer. The base structure has a receiving space. The receiving space is defined by an inner bottom surface of the base structure and an inner side wall surrounding the inner bottom surface of the base structure. The light-emitting chip is mounted on the bottom of the receiving space. The encapsulating structure is filled into the receiving space to cover the light-emitting chip. The phosphor layer is formed on the encapsulating structure. The dimension of the phosphor layer is more than the dimension of the receiving space and less than 1.5 times the dimension of the receiving space, so as to mount on the top surface of the base structure. Since the mentioned LED device is provided, the light paths of the light beam passing through the phosphor layer are substantially equal. Thus, the color of the light could be uniform. Furthermore, the phosphor layer can be made thinner thereby decreasing loss of the light power and increasing the overall effective package efficiency of light. In addition, the dimension of the phosphor layer is greater than that of the receiving space and thus the phosphor layer can fully cover the lighting area of the light-emitting chip so that light leakage can be avoided. Overall, the color of the light emitted in various angles is substantially same so as color uniformity would be better and the light-emitting view angle would be increased.
- For further understanding of the present invention, reference is made to the following detailed description illustrating the embodiments and examples of the present invention. The description is for illustrative purpose only and is not intended to limit the scope of the claim.
-
FIG. 1 is a schematic diagram of a LED according to the prior art; -
FIG. 2 is a flow chart of the packaging method for a LED device according to a first embodiment of the present invention; -
FIG. 3A is a schematic diagram of a step S1 in the packaging method for a LED device according to the first embodiment of the present invention; -
FIG. 3B is a schematic diagram of a step S1 in the packaging method for a LED device according to a second embodiment of the present invention; -
FIG. 4 is a schematic diagram of a step S2 in the packaging method for a LED device according to the first embodiment of the present invention; -
FIG. 5 is a schematic diagram of step S3 of the packaging method for a LED device according to the first embodiment of the present invention; -
FIG. 6A is a schematic diagram of a step S4 in the packaging method for a LED device according to the first embodiment of the present invention; -
FIG. 6B is a schematic diagram of a step S4 in the packaging method for a LED device according to the second embodiment of the present invention; -
FIG. 7A is a schematic diagram of the LED device according to the first embodiment of the present invention; and -
FIG. 7B is a schematic diagram of the LED device according to the second embodiment of the present invention. - In the following illustration, it is noted that similar elements are labeled as the same label.
- Please Refer to
FIG. 7A , which shows aLED device 200 according to the first embodiment of the present invention. TheLED device 200 includes abase structure 20, a light-emittingchip 22, anencapsulating structure 24 and aphosphor layer 28. Thebase structure 20 has areceiving space 202. Thereceiving space 202 is defined by aninner bottom surface 2022 of thebase structure 20 and aninner side wall 2021 surrounding theinner bottom surface 2022. The light-emittingchip 22 is mounted on the bottom of the receiving space 202 (i.e. theinner bottom surface 2022 of the base structure 20). In a preferred embodiment, the light-emittingchip 22 is mounted on a geometrical center of thereceiving space 202. Theinner side wall 2021 of thebase structure 20 is substantially parallel to surrounding the edge of the light-emittingchip 22, preferably. That is to say, theinner side wall 2021 of thebase structure 20 is an upright inner side surface around the edge of theinner bottom surface 2022, when the side surface of the light-emittingchip 22 is vertical to the bottom surface of the light-emittingchip 22. In this embodiment, theencapsulating structure 24 including anencapsulating material 241 and athinner macromolecule layer 242 is formed in thereceiving space 202 to cover the light-emittingchip 22, i.e. including the top surface and the side surfaces of the light-emittingchip 22. Theencapsulating structure 24 is fully filled into thereceiving space 202 of thebase structure 20 to form a plat upper surface. That is to say, the upper surface of theencapsulating structure 24 and thetop surface 201 of thebase structure 20 are approximately level with each other. Thephosphor layer 28 is formed on theencapsulating structure 24. The dimension (i.e. length/width d shown inFIG. 6A ) of thephosphor layer 28 in the lateral direction is greater than that of of the receiving space 202 (i.e. length/width d′ inFIG. 6A ) and preferably smaller than 1.5 times the dimension of the receivingspace 202. Theedge 281 of thephosphor layer 28 is mounted on thetop surface 201 of thebase structure 20. Thebase structure 20 further includes aconduct structure 203 electrically connected the light-emittingchip 22 with an external electrical power. In this embodiment, the light-emittingchip 22 is electrically connected to theconduct structure 203 within thebase structure 20 by wire bonding. That is to say, the light-emittingchip 22 can be electrically connected to positive andnegative conduct elements conduct structure 203 viaconnection wires - The
phosphor layer 28 is a phosphor powder paste flake or a layer with a macromolecule material and phosphor powder, and its thickness is uniform. The encapsulatingstructure 24 is glue, such as epoxide, silicone, or other macromolecule compounds with a long chain structure. The light-emittingchip 22 can emits light beam with a wavelength from UV to IR. In a preferred embodiment, thebase structure 20 is stacked by a multi-layer ceramic. - Please refer to
FIG. 7B , which is aLED device 200 according to the second embodiment of the present invention. The LED device of the second embodiment is similar to that of the first embodiment. The difference between the first and second embodiments is that the light-emittingchip 22 is formed in the receivingspace 202 of thebase structure 20 by flip chip bonding and the light-emittingchip 22 is electrically connected to the positive andnegative conduct elements conduct structure 203 viasolder pads - In order to package the
LED device 200 shown inFIG. 7A or 7B, a packaging method for a LED device is provided (as shown inFIG. 2 ) and includes the following steps. - Step 51 is a step of providing a base having a receiving space and mounting a light-emitting chip on the bottom of the receiving space.
- Step S2 is a step of injecting an encapsulating material such as a transparent packaging glue into the receiving space of the base to cover the top surface and the side surfaces of the light-emitting chip and then solidifying the encapsulating material.
- Step S3 is a step of injecting a thinner macromolecule layer on the solidified encapsulating material.
- Step S4 is a step of forming a phosphor layer formed on the thinner macromolecule layer, in which the dimension of the phosphor layer is greater than the dimension of the receiving space, so that the edge of the phosphor layer is mounted on the top surface of the base.
- Refer to
FIG. 3A . In the step 51, thebase structure 20 is provided. Thebase structure 20 includes a receivingspace 202. The receivingspace 202 is defined by aninner bottom surface 2022 of thebase structure 20 and aninner side wall 2021 surrounding the edge of theinner bottom surface 2022. The light-emittingchip 22 is mounted on theinner bottom surface 2022 of thebase structure 20 within the receivingspace 202. The light-emittingchip 22 is electrically connected with the positive andnegative conduct elements conduct structure 203 via theconnection wires chip 22. - Refer to
FIG. 3B , which shows the second embodiment. In a step S1, abase structure 20 is provided. Thebase structure 20 has a receivingspace 202. The receivingspace 202 is defined by aninner bottom surface 2022 of thebase structure 20 and aninner side wall 2021 surrounding the edge of theinner bottom surface 2022. A light-emittingchip 22 is mounted on the receivingspace 202 of thebase structure 20 by flip chip bonding and electrically connected with the positive andnegative conduct elements conduct structure 203 via thesolder pads chip 22. - According to
FIGS. 3A and 3B , the packaging method can be applied to both the flip chip bonding type of LED and the wire bonding type of LED. - Refer to
FIG. 4 . In the step S2, aninjection device 3 is used for injecting the encapsulatingmaterial 241 into the receivingspace 202 of thebase structure 20 to allow the encapsulatingmaterial 241 to cover the top surface and the side surfaces of the light-emittingchip 22. The encapsulatingmaterial 241 is fully filled in the receivingspace 202. Then, the encapsulatingmaterial 241 is solidified. The encapsulatingmaterial 241 can be epoxide, silicone, or other macromolecule compounds with a long chain structure. In this embodiment, the encapsulatingmaterial 241 is silicone, preferably. - Refer to
FIG. 5 . After the encapsulatingmaterial 241 in step S2 is solidified, athinner macromolecule layer 242 is injected on the encapsulatingmaterial 241. The material of thethinner macromolecule layer 242 could be the same as the encapsulatingmaterial 241 so that it can be epoxide, silicone, or other macromolecule compounds with a long chain structure. The thickness of thethinner macromolecule layer 242 is smaller than the height of the receivingspace 202 or the height of the structure defined by the encapsulatingmaterial 241. In this embodiment, thethinner macromolecule layer 242 is silicone, preferably. However, in some situation, after the solidifying process of the step S2, the encapsulatingmaterial 241 may shrink. It may be resulted in a concave top surface of the solidified encapsulatingmaterial 241. That is to say, thethinner macromolecule layer 242 would be used for filling this non-smooth top surface of the solidified encapsulatingmaterial 241. Thus, an approximate smooth top surface of the encapsulatingstructure 24 composed of the encapsulatingmaterial 241 and thethinner macromolecule layer 242 can be provided. In addition, if the quantity of the encapsulatingmaterial 241 injected in the step S2 is enough to form a smooth surface in the top surface of the encapsulatingmaterial 241, the step S3 can be omitted. Thus, the encapsulatingstructure 24 will be only formed of the encapsulatingmaterial 241. - In this embodiment, two times of injection molding are used for forming the encapsulating
structure 24 to prevent the deformation from occurring after the encapsulating material is solidified. Therefore, thephosphor layer 28 can be easily pasted. For example, when the phosphor powder flake in the prior art does not fully cover the surface of the chip and the blue light is emitted from the side of the chip whereby a non-uniform chromaticity for the prior LED device is generated. Thus, the problem can be overcome by thethinner macromolecule layer 242 to make the surface of the encapsulatingstructure 24 more smooth and sticky. Further, it is easy to paste thephosphor layer 28 and the encapsulatingstructure 24 in the step S4, and the non-uniform chromaticity can be avoided. - The
thinner macromolecule layer 242 is also used for leveling the upper surface of the encapsulatingstructure 24 and thetop surface 201 of thebase structure 20, and thus the step S4 could be implemented easily. In addition, the thickness of thethinner macromolecule layer 242 is smaller than the thickness of thephosphor layer 28, preferably. - Refer to
FIG. 6A . In the step S4, a pick-updevice 4 is used for picking up aphosphor powder flake 28 to be pasted onto thethinner macromolecule layer 242. In a preferred embodiment, the shape of thephosphor powder flake 28 could correspond to the shape of theinner bottom portion 2022 of the receivingspace 202. For example, when theinner bottom portion 2022 of the receivingspace 202 is rectangular, thephosphor powder flake 28 is also rectangular. The length d of thephosphor powder flake 28 is larger than the length d′ of theinner bottom portion 2022 of the receivingspace 202 and the width of thephosphor powder flake 28 is also larger than the width of theinner bottom portion 2022 of the receivingspace 202. Therefore, when thephosphor powder flake 28 is pasted onto thethinner macromolecule layer 242, theedge 281 of thephosphor powder flake 28 is mounted on thetop surface 201 of thebase structure 20 so that thephosphor powder flake 28 fully covers the receivingspace 202. - Refer to
FIG. 6B . The step S4 also can be implemented by the injection way. A macromolecule material with phosphor powder is injected on thethinner macromolecule layer 242 by aninjection device 3 to form aphosphor layer 28, and the dimension of the phosphor layer is more than that of the receivingspace 202 so that theedge 281 of thephosphor powder flake 28 can be mounted on thetop surface 201 of thebase structure 20 to fully cover the receivingspace 202. - In a preferred embodiment, after the step S4, a step of solidifying the
thinner macromolecule layer 242 is provided. This solidifying process is the same as the step S2 of solidifying the encapsulatingmaterial 241. In a preferred embodiment, the solidifying process is a curing process. - In this embodiment, there are two steps of curing processes to prevent air bubbles from occurring due to the expansion coefficients of the encapsulating material and the phosphor powder flake are different. Alternatively, it can prevent the phosphor layer formed by injection process and the encapsulating material from mixing during the curing process.
- By applying the steps S1˜S4, the
LED device 200, as shown inFIG. 7A or 7B would be packaged. - The light-emitting
chip 22 of theLED device 200 is mounted on theinner bottom surface 2022 of the receivingspace 202 of thebase structure 20. The top surface and the side surfaces of the light-emittingchip 22 are covered with an encapsulatingstructure 24. Thephosphor layer 28 is formed on the encapsulatingstructure 24. Therefore, the light paths in thephosphor layer 28 are equal so that the color of the light emitted by theLED device 200 is uniform. Further, the thickness of thephosphor layer 28 can be reduced so that the light loss is reduced and the package efficiency is enhanced. Furthermore, the dimension of thephosphor layer 28 is more than the dimension of the receivingspace 202 and the edge of thephosphor layer 28 is mounted on thetop surface 201 of thebase structure 20 so that thephosphor layer 28 fully covers the light-emitting area of the light-emittingchip 22, whereby the light leakage can be avoided. The color of the light emitted by theLED device 200 is uniform and the light-emitting view angle is wide. - In addition to be applied to the flip chip bonding type of LED, the packaging method also can be applied to a general LED, such as a wire bonding type of LED. It is easy to implement the packaging method by using the injection way, and its cost is low. Moreover, by using two steps of injection processes and two steps of solidifying processes to from the encapsulating structure, the phosphor layer can be easily pasted to avoid generating air bubbles and a non-uniform color. Therefore, the present packaging method can be applied to a variety of LEDs and includes low cost. The package efficiency of the present LED device could be high, the color thereof is uniform and the light-emitting view angle thereof is wide.
- The description above only illustrates specific embodiments and examples of the present invention. The present invention should therefore cover various modifications and variations made to the herein-described structure and operations of the present invention, provided they fall within the scope of the present invention as defined in the following appended claims.
Claims (4)
Priority Applications (1)
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US13/447,129 US20120194067A1 (en) | 2009-04-30 | 2012-04-13 | Led device |
Applications Claiming Priority (4)
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CNA2009100391894A CN101551068A (en) | 2009-04-30 | 2009-04-30 | Light emitting diode device and encapsulating method thereof |
CN200910039189.4 | 2009-04-30 | ||
US12/649,585 US8216864B2 (en) | 2009-04-30 | 2009-12-30 | LED device and packaging method thereof |
US13/447,129 US20120194067A1 (en) | 2009-04-30 | 2012-04-13 | Led device |
Related Parent Applications (1)
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US12/649,585 Continuation US8216864B2 (en) | 2009-04-30 | 2009-12-30 | LED device and packaging method thereof |
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US20120194067A1 true US20120194067A1 (en) | 2012-08-02 |
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US12/649,585 Active 2030-02-24 US8216864B2 (en) | 2009-04-30 | 2009-12-30 | LED device and packaging method thereof |
US13/447,129 Abandoned US20120194067A1 (en) | 2009-04-30 | 2012-04-13 | Led device |
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US12/649,585 Active 2030-02-24 US8216864B2 (en) | 2009-04-30 | 2009-12-30 | LED device and packaging method thereof |
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CN (1) | CN101551068A (en) |
Families Citing this family (10)
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CN102052624B (en) * | 2009-11-09 | 2013-09-25 | 亿光电子工业股份有限公司 | Dimmer lighting assembly and manufacturing method thereof |
CN102130235B (en) * | 2010-12-31 | 2012-12-26 | 深圳中景科创光电科技有限公司 | Method and device for packaging LED chip |
TWI474410B (en) * | 2011-06-10 | 2015-02-21 | King Yuan Electronics Co Ltd | An automatically packing device for chips |
CN102496672A (en) * | 2011-12-22 | 2012-06-13 | 日月光半导体制造股份有限公司 | LED packaging structure and manufacturing method thereof |
US9871167B2 (en) * | 2013-04-11 | 2018-01-16 | Koninklijke Philips N.V. | Top emitting semiconductor light emitting device |
CN103855283B (en) * | 2014-01-26 | 2017-05-10 | 上海瑞丰光电子有限公司 | LED packaging body and illumination device |
CN105990496B (en) * | 2015-03-04 | 2018-11-16 | 光宝光电(常州)有限公司 | LED encapsulation structure and its manufacturing method |
CN106972093B (en) * | 2016-01-13 | 2019-01-08 | 光宝光电(常州)有限公司 | Light-emitting diode encapsulation structure |
JP2018137320A (en) * | 2017-02-21 | 2018-08-30 | シャープ株式会社 | Light-emitting device and image display device |
TWI658608B (en) * | 2017-08-30 | 2019-05-01 | 友達光電股份有限公司 | Light emitting packaging structure |
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US20050200269A1 (en) * | 2004-03-11 | 2005-09-15 | Kee-Yean Ng | LED display with overlay |
US20060163601A1 (en) * | 2003-02-28 | 2006-07-27 | Volker Harle | Lighting module and method the production thereof |
US20070176196A1 (en) * | 2006-02-02 | 2007-08-02 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode module |
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US6650044B1 (en) * | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
US6417019B1 (en) * | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
US6576488B2 (en) * | 2001-06-11 | 2003-06-10 | Lumileds Lighting U.S., Llc | Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor |
US7101654B2 (en) * | 2004-01-14 | 2006-09-05 | Promerus Llc | Norbornene-type monomers and polymers containing pendent lactone or sultone groups |
US8039862B2 (en) * | 2009-03-10 | 2011-10-18 | Nepes Led Corporation | White light emitting diode package having enhanced white lighting efficiency and method of making the same |
-
2009
- 2009-04-30 CN CNA2009100391894A patent/CN101551068A/en active Pending
- 2009-12-30 US US12/649,585 patent/US8216864B2/en active Active
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Patent Citations (3)
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US20060163601A1 (en) * | 2003-02-28 | 2006-07-27 | Volker Harle | Lighting module and method the production thereof |
US20050200269A1 (en) * | 2004-03-11 | 2005-09-15 | Kee-Yean Ng | LED display with overlay |
US20070176196A1 (en) * | 2006-02-02 | 2007-08-02 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode module |
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CN101551068A (en) | 2009-10-07 |
US8216864B2 (en) | 2012-07-10 |
US20100276713A1 (en) | 2010-11-04 |
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