CN2884288Y - 比例型电流镜像电路 - Google Patents
比例型电流镜像电路 Download PDFInfo
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- CN2884288Y CN2884288Y CN 200520105772 CN200520105772U CN2884288Y CN 2884288 Y CN2884288 Y CN 2884288Y CN 200520105772 CN200520105772 CN 200520105772 CN 200520105772 U CN200520105772 U CN 200520105772U CN 2884288 Y CN2884288 Y CN 2884288Y
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- 239000012467 final product Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 200520105772 CN2884288Y (zh) | 2005-11-03 | 2005-11-03 | 比例型电流镜像电路 |
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CN 200520105772 CN2884288Y (zh) | 2005-11-03 | 2005-11-03 | 比例型电流镜像电路 |
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CN2884288Y true CN2884288Y (zh) | 2007-03-28 |
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CN 200520105772 Expired - Lifetime CN2884288Y (zh) | 2005-11-03 | 2005-11-03 | 比例型电流镜像电路 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102645953A (zh) * | 2012-05-15 | 2012-08-22 | 株洲联诚集团有限责任公司 | 一种电压放大特性镜像对称电路及其设计方法 |
CN103631303A (zh) * | 2013-12-01 | 2014-03-12 | 西安电子科技大学 | 用于稳压电源芯片的软启动电路 |
CN106774584A (zh) * | 2017-02-14 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | 一种电流模电流最小值电路 |
CN108170197A (zh) * | 2017-12-19 | 2018-06-15 | 重庆湃芯微电子有限公司 | 一种高精度的高阶补偿带隙基准电路 |
CN114237339A (zh) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | 带隙基准电压电路及带隙基准电压的补偿方法 |
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2005
- 2005-11-03 CN CN 200520105772 patent/CN2884288Y/zh not_active Expired - Lifetime
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102645953A (zh) * | 2012-05-15 | 2012-08-22 | 株洲联诚集团有限责任公司 | 一种电压放大特性镜像对称电路及其设计方法 |
CN103631303A (zh) * | 2013-12-01 | 2014-03-12 | 西安电子科技大学 | 用于稳压电源芯片的软启动电路 |
CN103631303B (zh) * | 2013-12-01 | 2015-11-18 | 西安电子科技大学 | 用于稳压电源芯片的软启动电路 |
CN106774584A (zh) * | 2017-02-14 | 2017-05-31 | 上海华虹宏力半导体制造有限公司 | 一种电流模电流最小值电路 |
CN106774584B (zh) * | 2017-02-14 | 2018-07-20 | 上海华虹宏力半导体制造有限公司 | 一种电流模电流最小值电路 |
CN108170197A (zh) * | 2017-12-19 | 2018-06-15 | 重庆湃芯微电子有限公司 | 一种高精度的高阶补偿带隙基准电路 |
CN114237339A (zh) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | 带隙基准电压电路及带隙基准电压的补偿方法 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: BCD Semiconductor Manufacturing Corporation Limited Assignor: BCD Semiconductor Manufacturing Ltd. Contract fulfillment period: 2008.5.27 to 2015.11.2 Contract record no.: 2008990000123 Denomination of utility model: Proportional type current mirror circuit Granted publication date: 20070328 License type: Exclusive license Record date: 20080613 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.5.27 TO 2015.11.2 Name of requester: SHANGHAI XINJIN SEMICONDUCTOR MANUFACTURING CO., Effective date: 20080613 |
|
EE01 | Entry into force of recordation of patent licensing contract |
Assignee: BCD Semiconductor Manufacturing Corporation Limited Assignor: BCD Semiconductor Manufacturing Ltd. Contract fulfillment period: 2007.4.28 to 2013.4.27 Contract record no.: 2008990000587 Denomination of utility model: Proportional type current mirror circuit Granted publication date: 20070328 License type: Exclusive license Record date: 20081008 |
|
LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2007.4.28 TO 2013.4.27; CHANGE OF CONTRACT Name of requester: SHANGHAI XINJIN SEMICONDUCTOR MANUFACTURING CO., L Effective date: 20081008 |
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CX01 | Expiry of patent term |
Granted publication date: 20070328 |
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EXPY | Termination of patent right or utility model |