CN2739798Y - Semiconductor integrated circuit lead frame - Google Patents
Semiconductor integrated circuit lead frame Download PDFInfo
- Publication number
- CN2739798Y CN2739798Y CN 200420020775 CN200420020775U CN2739798Y CN 2739798 Y CN2739798 Y CN 2739798Y CN 200420020775 CN200420020775 CN 200420020775 CN 200420020775 U CN200420020775 U CN 200420020775U CN 2739798 Y CN2739798 Y CN 2739798Y
- Authority
- CN
- China
- Prior art keywords
- lead frame
- heat radiation
- integrated circuit
- semiconductor integrated
- slide holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model provides a semiconductor integrated circuit lead frame, which comprises a lead frame and a heat radiation object stage. A groove is punched at the center of the heat radiation object stage, a rivet hole is punched between the lead frame and the heat radiation object stage, and the lead frame is riveted with the heat radiation object stage through the rivet hole. The utility model has the advantages of simple technology, low cost and fast heat radiation. The semiconductor integrated circuit lead frame is applicable to the encapsulation of semiconductor integrated circuit products with relatively large power consumption.
Description
Technical field
The utility model relates to a kind of lead frame, particularly a kind of semiconductor integrated circuit lead frame, the parts of genus semiconductor device.
Background technology
In the prior art, be evenly to be arranged with several pins, heat radiation slide holder on the both sides of semiconductor integrated circuit lead frame.Each pin separately, pin does not join with the heat radiation slide holder, framework also is three body structures, area of dissipation is little like this, can only be applicable to the less device of encapsulation power consumption, the device that some power consumptions are bigger just has been willing and yet unable to help, though this has been done some improvement, as China Patent No. is ZL98248753, ZL03229696 etc., but some problems such as framework heat radiation, qualification rate be low are still failed to solve.
Summary of the invention
The purpose of this utility model provides a kind of structure, technology is simple, cost is low, is applicable to the lead frame of the semiconductor integrated circuit that the encapsulation power consumption is big.
The utility model is achieved in that it comprises lead frame, heat radiation slide holder, also dash at the center of described heat radiation slide holder and to be provided with groove, also dash between described lead frame and described heat radiation slide holder and be provided with several riveted holes, described lead frame and described heat radiation slide holder are riveted together through described riveted holes.
Because semiconductor integrated circuit lead frame of the present utility model adopted said structure, increased the area of dissipation of integrated circuit (IC) products, simple in structure, cost is low, is applicable to the big semiconductor integrated circuit product of encapsulation power consumption.
Description of drawings
The utility model is described in further detail for an embodiment below in conjunction with accompanying drawing.
Fig. 1 is a structural representation of the present utility model.
Fig. 2 is the end view of structural representation of the present utility model.
Fig. 3 is the A-A cutaway view among Fig. 1.
Embodiment
As Fig. 1, Fig. 2, shown in Figure 3, (size that promptly designs) difference is one time punching molded according to actual needs with lead frame 1, heat radiation slide holder 2.Used material all is commercially available alloy conductive material.Dash in the center of heat radiation slide holder 2 and establish a groove 3, this groove 3 can make the middle boss that forms of heat radiation slide holder 2, and the size of groove 3 is decided according to the actual requirements, and its height is 0.15-0.3mm in the present embodiment, and wide is 0.2-0.5mm.Dash between lead frame 1 and heat radiation slide holder 2 then and be provided with several riveted holes 4, the diameter in hole is 0.8-1.5mm in the present embodiment, and quantity is about 4.By riveted holes 4 lead frame 1 is fixed with heat radiation slide holder 2 usefulness rivets and to get final product.
In practical operation, because groove 3 can make the middle boss that forms of heat radiation slide holder 2, thereby prevent effectively that in the die bonding process bonding agent from overflowing the side that chip is stain in the back around chip, so just guaranteed the performance of product, because lead frame 1 and heat radiation slide holder 2 have so just reduced the cost of manufacture of framework by riveted holes 4 riveted and fixed.
Claims (1)
1. semiconductor integrated circuit lead frame, comprise lead frame (1), heat radiation slide holder (2), it is characterized in that at the center of described heat radiation slide holder (2) also dashing and be provided with groove (3), also dash between described lead frame (1) and described heat radiation slide holder (2) and be provided with several riveted holes (4), described lead frame (1) and described heat radiation slide holder (2) are riveted together through described riveted holes (4).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200420020775 CN2739798Y (en) | 2004-03-12 | 2004-03-12 | Semiconductor integrated circuit lead frame |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200420020775 CN2739798Y (en) | 2004-03-12 | 2004-03-12 | Semiconductor integrated circuit lead frame |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2739798Y true CN2739798Y (en) | 2005-11-09 |
Family
ID=35354860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200420020775 Expired - Fee Related CN2739798Y (en) | 2004-03-12 | 2004-03-12 | Semiconductor integrated circuit lead frame |
Country Status (1)
Country | Link |
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CN (1) | CN2739798Y (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102044517A (en) * | 2010-11-30 | 2011-05-04 | 天水华天科技股份有限公司 | Super-high-power IC chip package and production method thereof |
CN102332443A (en) * | 2011-06-16 | 2012-01-25 | 沈健 | Lead frame for plastic package semiconductor |
CN102368492A (en) * | 2011-10-25 | 2012-03-07 | 张轩 | Triode lead frame with lead hole |
CN102368485A (en) * | 2011-10-25 | 2012-03-07 | 张轩 | Improved semiconductor element lead framework |
CN105047641A (en) * | 2015-08-12 | 2015-11-11 | 深圳市槟城电子有限公司 | Semiconductor chip integrated element |
CN111326429A (en) * | 2020-03-06 | 2020-06-23 | 浙江工业职业技术学院 | Double-base-island heat dissipation chip packaging process |
-
2004
- 2004-03-12 CN CN 200420020775 patent/CN2739798Y/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102044517A (en) * | 2010-11-30 | 2011-05-04 | 天水华天科技股份有限公司 | Super-high-power IC chip package and production method thereof |
CN102044517B (en) * | 2010-11-30 | 2013-04-17 | 天水华天科技股份有限公司 | Production method of super-high-power IC chip package |
CN102332443A (en) * | 2011-06-16 | 2012-01-25 | 沈健 | Lead frame for plastic package semiconductor |
CN102368492A (en) * | 2011-10-25 | 2012-03-07 | 张轩 | Triode lead frame with lead hole |
CN102368485A (en) * | 2011-10-25 | 2012-03-07 | 张轩 | Improved semiconductor element lead framework |
CN105047641A (en) * | 2015-08-12 | 2015-11-11 | 深圳市槟城电子有限公司 | Semiconductor chip integrated element |
CN111326429A (en) * | 2020-03-06 | 2020-06-23 | 浙江工业职业技术学院 | Double-base-island heat dissipation chip packaging process |
CN111326429B (en) * | 2020-03-06 | 2021-08-06 | 浙江工业职业技术学院 | Double-base-island heat dissipation chip packaging process |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C19 | Lapse of patent right due to non-payment of the annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |