CN2717027Y - 一种大功率发光二极管 - Google Patents

一种大功率发光二极管 Download PDF

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CN2717027Y
CN2717027Y CNU2004200713301U CN200420071330U CN2717027Y CN 2717027 Y CN2717027 Y CN 2717027Y CN U2004200713301 U CNU2004200713301 U CN U2004200713301U CN 200420071330 U CN200420071330 U CN 200420071330U CN 2717027 Y CN2717027 Y CN 2717027Y
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heat sink
electrode pin
emitting diodes
power light
framework
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余彬海
薛克瑞
缪来虎
方福波
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Foshan NationStar Optoelectronics Co Ltd
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Foshan NationStar Optoelectronics Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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Abstract

本实用新型公开了一种大功率发光二极管,包括电极引脚、热沉、框架、管芯、键合线、透明胶状封装材料,其电极引脚为片状,其热沉底端面超出管脚及框架底端1毫米以上且它在安装到线路板上后,热沉底端超出线路板底端。本实用新型优点在于:可以直接使用普通线路板替代价格昂贵的金属线路板,大幅度降低应用成本;其热沉可与外部散热器直接接触,热阻更小,散热效果更好;可实现热电完全分离,避免光源在工作过程中热和电的相互干扰。

Description

一种大功率发光二极管
技术领域
本实用新型涉及一种发光二极管,尤其是一种大功率发光二极管。
背景技术
由于功率发光二极管的输入功率比普通发光二极管大,其发热情况比普通发光二极管显得更为严重。而发光二极管的发热将对其发光效率和寿命产生不良影响,因此为了避免功率发光二极管PN上热量的积累而影响功率发光二极管的性能和寿命,在功率发光二极管上都设置有热沉。现有技术中的发光二极管的热沉结构是这样的:热沉底面与功率发光二极管电极引脚焊接面相平或略高于功率发光二极管电极引脚焊接面,在应用时将功率发光二极管表面贴装在金属线路板上并使得功率发光二极管的热沉与金属线路板接触,或在热沉与金属线路板之间垫导热材料,将热沉上的热量传递到金属线路板上,再通过金属线路板或与金属线路板联接的散热器将热量传递出去。采用这种热沉结构的缺陷在于:使用金属线路板的成本极其高昂,在金属线路板上热电相混,即使功率发光二极管本身实现了热电分离,但在应用系统层次无法实现热系统和电子系统的分离,系统的发热将导致电子元器件性能的劣化,降低系统的可靠性。
发明内容
本实用新型的目的就是为了提供一种散热性能好、结构简单、应用时可热电分离、应用成本低廉的大功率发光二极管。
本实用新型包括电极引脚、热沉、框架、管芯、键合线、透明胶状封装材料,其电极引脚为片状,其热沉底端面超出管脚及框架底端1毫米以上且它在安装到线路板上后,热沉底端超出线路板底端。电极引脚与热沉可以是分离的,也可以是其中一个电极的引脚与热沉是相连接的;框架采用塑料封装而成,并在框架的中央部位形成凹杯,透明胶状封装材料填充在凹杯中;热沉的底面形状可以为规则圆柱状,也可以为不规则圆柱状;热沉的材料采用铜、铝等导热性能良好的金属及合金材料。
本实用新型优点在于:由于其热沉底端面超出管脚及框架底端1毫米以上且它在安装到线路板上后,热沉底端超出线路板底端,所以在应用时,可以直接使用普通线路板替代价格昂贵的金属线路板,可以大幅度降低应用成本;其热沉可与外部散热器直接接触,热阻更小,散热效果更好;可实现热电完全分离,避免光源在工作过程中热和电的相互干扰。
附图说明
以下结合附图和具体实施例对本实用新型作进一步说明
图1为本实用新型一实施例的结构示意图;
图2为本实用新型一实施例的立体示意图;
图3为本实用新型一实际应用例结构示意图。
具体实施例
如图1、如图2所示,本实用新型包括电极引脚1、热沉2、框架3、管芯4、键合线5、透明胶状封装材料6。电极引脚1与热沉2是分离的,电极引脚1通过键合线5与管芯4相连,电极引脚1为片状,热沉2设置在框架3内,热沉2底面的形状为规则圆柱状,热沉2的材料为铜。透明胶状封装材料6在种线后注入框架3的凹杯中,管芯4安放在框架凹杯底部的热沉2上;热沉2底端面超出电极引脚1及框架3底端1毫米以上以便其在安装到线路板8上后,热沉2底端超出线路板8底端。
在图3应用例中,将本实用新型贴装在普通线路板8上,在线路板8与热沉2相应位置开有与热沉相适应的孔9,在线路板8的下方安放散热器11,热沉2穿过线路板8的孔9与散热器直接接触,可用螺钉10等连接件将散热器11和线路板8连接在一起。
上述实施例中的电极引脚1中也可以有一个电极引脚1与热沉2相连接,其余电极引脚1与热沉2是分离的。热沉2底面的形状也可为不规则圆柱状,热沉2材料还包括铝和合金材料。
在制造本实用新型大功率发光二极管之前,由大功率发光二极管的各电极引脚形成功率发光二极管的支架,由多个支架并行排列组成支架条。支架可以直接采用冲压的方法制作。另外需要制作热沉,热沉可采用铸造方式制造,也可采用冲压成型的方式制作。本实用新型功率发光二极管的制作包括以下步骤:
(1)注塑成型:将功率发光二极管支架连同热沉注塑封成框架,并在热沉上方的框架中央部位形成凹杯;
(2)涂助焊剂:在框架凹杯底面涂助焊剂;
(3)安放管芯:将管芯安放在涂过助焊剂的热沉上;
(4)焊接管芯:使管芯与热沉牢靠连接;
(5)金线键合:将管芯用金线连接到相应电极引脚;
(6)点胶:用调配好的弹性透光胶状封装材料填入凹杯中;
(7)固化:将点完胶的功率发光二极管放入固化炉中固化,使弹性透光胶状封装材料固化成型;
(8)冲筋:将功率发光二极管从其支架条上剪下;
(9)测试:检测功率发光二极管的光学和电学参数并根据检测情况分档;
(10)编带:将分档后的功率发光二极管编带包装;
(11)入库。

Claims (8)

1、一种大功率发光二极管,包括电极引脚、框架、热沉、管芯、键合线、透明胶状封装材料,热沉设置在框架内,其特征在于:其电极引脚为片状,热沉底端面超出电极引脚及框架底端,超出的长度为在安装到线路板后,其底端超出线路板底端。
2、根据权利要求1所述的一种大功率发光二极管,其特征在于:热沉底端面超出电极引脚及框架底端1毫米以上。
3、根据权利要求1所述的一种大功率发光二极管,其特征在于:所述的电极引脚与热沉是分离的。
4、根据权利要求1所述的一种大功率发光二极管,其特征在于:所述的电极引脚中有一个电极引脚与热沉相连接,其余电极引脚与热沉是分离的。
5、根据权利要求1所述的一种大功率发光二极管,其特征在于:所述的框架采用塑料封装而成,封装后中央部位为凹杯状,透明胶状封装材料填充在凹杯中。
6、根据权利要求1所述的一种大功率发光二极管,其特征在于:所述的热沉底部的形状为规则圆柱状。
7、根据权利要求1所述的一种大功率发光二极管,其特征在于:所述的热沉底部的形状为不规则圆柱状。
8、根据权利要求1所述的一种大功率发光二极管,其特征在于:所述热沉材料为铜、铝或合金材料。
CNU2004200713301U 2004-07-09 2004-07-09 一种大功率发光二极管 Expired - Lifetime CN2717027Y (zh)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008043206A1 (en) * 2006-10-10 2008-04-17 Jen-Shyan Chen A semiconductor light-emitting module
CN100399137C (zh) * 2005-12-21 2008-07-02 友达光电股份有限公司 显示器的散热结构
CN101820045A (zh) * 2010-04-09 2010-09-01 江苏伯乐达光电科技有限公司 Led的封装支架、led封装方法及利用该方法制作的led
CN101192637B (zh) * 2006-11-27 2012-04-04 山西乐百利特科技有限责任公司 发光二极管元件

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100399137C (zh) * 2005-12-21 2008-07-02 友达光电股份有限公司 显示器的散热结构
WO2008043206A1 (en) * 2006-10-10 2008-04-17 Jen-Shyan Chen A semiconductor light-emitting module
EA013884B1 (ru) * 2006-10-10 2010-08-30 Необульб Текнолоджиз Инк. Полупроводниковый мощный светоизлучающий модуль с теплоизоляцией
US8193553B2 (en) 2006-10-10 2012-06-05 Neobulb Technologies, Inc. Semiconductor high-power light-emitting module with heat isolation
CN101192637B (zh) * 2006-11-27 2012-04-04 山西乐百利特科技有限责任公司 发光二极管元件
CN101820045A (zh) * 2010-04-09 2010-09-01 江苏伯乐达光电科技有限公司 Led的封装支架、led封装方法及利用该方法制作的led
CN101820045B (zh) * 2010-04-09 2014-02-05 江苏伯乐达光电科技有限公司 Led的封装支架、led封装方法及利用该方法制作的led

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Owner name: FUSHAN CITY GUOXING PHOTOELECTRIC CO., LTD.

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Address after: 528000, No. 18, Huabao South Road, Chancheng District, Guangdong, Foshan

Patentee after: Foshan Guoxing Photoelectric Co., Ltd.

Address before: 528000, No. 24 Jiangbei Road, Chancheng District, Guangdong, Foshan

Patentee before: Foshan Nationstar Optoelectronics Co., Ltd.

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Expiration termination date: 20140709

Granted publication date: 20050810