CN2640046Y - Improved glass sealed diode - Google Patents
Improved glass sealed diode Download PDFInfo
- Publication number
- CN2640046Y CN2640046Y CN 03232659 CN03232659U CN2640046Y CN 2640046 Y CN2640046 Y CN 2640046Y CN 03232659 CN03232659 CN 03232659 CN 03232659 U CN03232659 U CN 03232659U CN 2640046 Y CN2640046 Y CN 2640046Y
- Authority
- CN
- China
- Prior art keywords
- silver
- glass
- silicon crystal
- tube core
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model relates to an improved glass-sealing diode, which comprises a chip formed a silicon crystal and other members and a tube shell formed by two electrode leaders and a glass shell; a silver boss and a silver layer positioned on an upper surface and a lower surface of the silicon crystal respectively are also arranged inside the chip, when the chip is encapsulated inside the tube shell; the two electrode leaders have two opposite end faces, and the two end faces are overlapped with the chip mutually. With the adoption the structure, the utility model has the advantages of low manufacturing cost, high breakdown region coverage voltage and fitness for manufacture of various diodes.
Description
Technical field
The utility model relates to a kind of diode, and particularly a kind of improved glass sealed diode belongs to semiconductor components and devices.
Background technology
Commercially available glass sealed diode processes with the plane tube core at present, and there is complex process in the diode of this type, the cost height, and the breakdown region covers the low deficiency that waits of voltage.
Summary of the invention
The purpose of this utility model provides that a kind of cost is low, the breakdown region covers the high glass sealed diode of voltage.
The utility model is achieved in that it comprises the tube core that is made of glass passivation layer, silicon crystal, the shell that constitutes by two contact conductors, glass bulbs, in tube core, also include silver-colored salient point, silver layer, wherein said silver-colored salient point is arranged on the upper surface of described silicon crystal, described silver layer is arranged on the lower surface of described silicon crystal, described tube core is sealing-in by two contact conductors, in the shell that glass bulb constitutes.
The thickness of described silver-colored salient point is about 10～30 μ.
Glass sealed diode of the present utility model so its cost is low, the breakdown region covers the voltage height, and adopts its glass of making envelope voltage stabilizing didoe can reach this performance equally owing to adopt said structure.
Description of drawings
Fig. 1 is a tube core structure schematic diagram of the present utility model.
Fig. 2 is a structural representation of the present utility model.
Embodiment
As shown in Figure 1, with the silver-colored salient point 1 after silver-plated, silver layer 4 is separately positioned on the upper and lower surface of silicon crystal 3, (silver-colored salient point is the upper surface that is electroplated onto silicon crystal 3 in the utility model, and silver layer 4 is the lower surfaces that are evaporated to silicon crystal 3).The thickness of silver salient point 1 is about 10～30 μ, and size is pressed actual needs and decided, and silicon crystal 3 adopts silicon single crystal flake (also can adopt other semiconductor monocrystal sheet) to make after semiconductor technology is handled.Glass passivation layer 2 also is that a glass sealed diode tube core 5 so just is processed at the PN junction table top side direction position (not marking among the figure) of adopting semiconductor technology to be created on silicon crystal 3.
Above-mentioned silver-colored salient point 1, silver layer 4 also can adopt other metallic conduction material to make.
As shown in Figure 2, constitute a shell by contact conductor 6,7 glass bulbs 8.Earlier the end face of contact conductor 7 is packed into up in the sealing-in mould (not marking among the figure) again glass bulb 8 is also packed in the same sealing-in mould, then manufactured glass sealed diode tube core 5 (as shown in Figure 1) is packed in the same sealing-in mould, 6 the end face of then going between is packed in the above-mentioned same sealing-in mould down, make contact conductor 6,7 end face and diode chip 5 are superimposed mutually, assemble after glass envelope voltage stabilizing didoe (adopting the voltage stabilizing didoe tube core), the voltage stabilizing didoe that adopts the utility model to make have promptly been made in high intermediate temperature sealing moulding, technology is simple, cost is low, the breakdown region covers the voltage height.
Contact conductor 6.7 is two identical contact conductors.
Claims (2)
1. an improved glass sealed diode comprises the tube core (5) that is made of glass passivation layer (2), silicon crystal (3), and the shell by contact conductor (6), (7), glass bulb (8) constitute is characterized in that:
A. also include silver-colored salient point (1), silver layer (4) in described tube core (5), wherein said silver-colored salient point (1) is arranged on the upper surface of described silicon crystal (3), and described silver layer (4) is arranged on the lower surface of described silicon crystal (3),
B. described tube core (5) is sealing-in in the shell that is made of described contact conductor (6), (7), glass bulb (8), and two end faces of wherein said contact conductor (6), (7) are superimposed mutually with described tube core (5) in opposite directions.
2. a kind of glass sealed diode according to claim 1, the thickness that it is characterized in that described silver-colored salient point (1) is 10～30 μ.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03232659 CN2640046Y (en) | 2003-06-30 | 2003-06-30 | Improved glass sealed diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03232659 CN2640046Y (en) | 2003-06-30 | 2003-06-30 | Improved glass sealed diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2640046Y true CN2640046Y (en) | 2004-09-08 |
Family
ID=34291534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03232659 Expired - Fee Related CN2640046Y (en) | 2003-06-30 | 2003-06-30 | Improved glass sealed diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2640046Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007053976A1 (en) * | 2005-11-09 | 2007-05-18 | Tak Cheong Electronics (Shanwei) Co., Ltd. | A new glass packaging diode |
| CN105845740A (en) * | 2016-06-14 | 2016-08-10 | 张路非 | Metallurgical bonding glass-sealed diode structure and production method thereof |
-
2003
- 2003-06-30 CN CN 03232659 patent/CN2640046Y/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007053976A1 (en) * | 2005-11-09 | 2007-05-18 | Tak Cheong Electronics (Shanwei) Co., Ltd. | A new glass packaging diode |
| CN105845740A (en) * | 2016-06-14 | 2016-08-10 | 张路非 | Metallurgical bonding glass-sealed diode structure and production method thereof |
| CN105845740B (en) * | 2016-06-14 | 2019-04-09 | 张路非 | A kind of metallurgical bonding glass sealed diode structure and production method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C57 | Notification of unclear or unknown address | ||
| DD01 | Delivery of document by public notice |
Addressee: Zhou Shoutong Document name: Notification of Termination of Patent Right |
|
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |