CN105845740B - A kind of metallurgical bonding glass sealed diode structure and production method - Google Patents
A kind of metallurgical bonding glass sealed diode structure and production method Download PDFInfo
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- CN105845740B CN105845740B CN201610417019.5A CN201610417019A CN105845740B CN 105845740 B CN105845740 B CN 105845740B CN 201610417019 A CN201610417019 A CN 201610417019A CN 105845740 B CN105845740 B CN 105845740B
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Abstract
The invention discloses a kind of metallurgical bonding glass sealed diode structure and production methods, the structure includes electrode A, electrode B, chip and glass-tube, the electrode A, electrode B and chip are all set in glass-tube, it is realized and is electrically connected by Diffusion Welding between the chip and electrode A and electrode B, and the buffer layer material of diffusion welding (DW) is respectively the upper surface metalization layer and lower surface metal layer of chip, the sealing-in of Diffusion Welding and glass-tube between chip and electrode A and electrode B synchronously completes to form an entirety；The method includes component assembling and sintering steps.The present invention realizes metallurgical bonding by pyroprocess between electrode and chip, has many advantages, such as perfect heat-dissipating, resistance to heavy current impact, and working range can be from -55 DEG C to 175 DEG C；The deficiencies of overcoming the anti-surge forward current ability of metallurgical bonding glass sealed diode product and anti-reflective weak to transient power ability of prior art production.
Description
Technical field
The invention belongs to semiconductor element processing technique fields, are specifically related to a kind of metallurgical bonding glass sealed diode structure
And production method.
Background technique
Glass sealed diode has the characteristics that structure is simple, small in size, light weight and cost is cheap, in household electrical appliance, automobile electricity
There is extensive use in each field such as son, aerospace, but the metallurgical bonding glass sealed diode of prior art production is usually
Dumet wire electrode-silver-bearing copper soldering piece-chip-silver-bearing copper soldering piece-Dumet wire electrode structure, due to Dumet wire, silver-bearing copper soldering piece
And the components such as chip have on thermal expansion coefficient plus biggish difference, the glass inside front cover for the metallurgical bonding for causing the prior art to produce
That there are operating temperature ranges is relatively narrow for pole pipe, proper alignment temperature is lower, the ability of anti-surge forward current and reverse surge power compared with
The deficiencies of heat power consumption weak and can bear is lower.Limit its rectification of larger current and Schottky barrier diodes,
Application on the voltage adjustment diode of the TVS product and 1.5W or more thermal power of 500W and the above power.
Summary of the invention
The present invention provides a kind of metallurgical bonding glass sealed diode structure and production methods, can expand metallurgical bonding glass envelope
The TVS product and 1.5W or more of the rectification of diode larger current and Schottky barrier diodes, 500W and the above power heat
Application on the voltage adjustment diode of power.
The present invention is achieved by the following technical programs.
A kind of metallurgical bonding glass sealed diode structure, including electrode A, electrode B, chip and glass-tube, the electrode A, electrode B
It is all set in glass-tube with chip, is realized and be electrically connected by Diffusion Welding between the chip and electrode A and electrode B, and expanded
The buffer layer material for dissipating weldering is respectively the upper surface metalization layer and lower surface metal layer of chip, chip and electrode A and electrode
The sealing-in of Diffusion Welding and glass-tube between B synchronously completes to form an entirety.
The material of the electrode A and electrode B is tungsten.
The glass-tube uses Glass8652 glass-tube, and the softening point temperature of Glass8652 glass-tube is 638 DEG C.
The chip is GPP chip, and the material of side metallization and lower surface metal layer is silver thereon.
The diode uses sinter molding, and the temperature of sinter molding is 720 DEG C ± 20 DEG C.
A method of above-mentioned metallurgical bonding glass sealed diode being produced, steps are as follows for specific method:
(1) component assembles: glass-tube, electrode A and chip being fitted into lower die, and are packed into electrode B in upper mold, then will be upper
Mould tips upside down in lower die, so that component assembles in mold forms diode, then applying weight in the upper end of electrode B is
The briquetting of 2g-15g；
(2) it is sintered: assembled diode in step (1) is sintered, sintering method is hot wall type vacuum-sintering
Or cold wall type vacuum-sintering.
Steps are as follows for the hot wall type vacuum sintering method:
A, it will be equipped in step (1) in the mold push-in vacuum sintering furnace boiler tube of diode；
B, boiler tube in step A is evacuated；
C, when in step B boiler tube internal vacuum be lower than 1 × 10-4Heating is opened when Pa, and by temperature in boiler tube in 10min
720 DEG C ± 20 DEG C are warming up in~30min；
D, by thermostatic 10min~30min in boiler tube in step C；
E, diode is down to room temperature in 10min~30min；
F, it opens vent valve to take out diode from sintering furnace boiler tube, finished product glass sealed diode can be obtained.
Steps are as follows for the cold wall type vacuum sintering method:
A, the mold equipped with diode is put into the burner hearth of vacuum sintering furnace, and bell is covered；
B, nitrogen will be filled in sintering furnace after vacuum-sintering stove evacuation 10s~30s；
C, burner hearth internal vacuum is evacuated to again after step B is filled with nitrogen in sintering furnace lower than 1 × 10-4Pa, and
It is powered to graphite jig, mold temperature is made to be warming up to 720 ± 20 DEG C in 10min~30min；
D, by 720 DEG C of ± 20 DEG C of constant temperature 10min~30min of mold temperature in step C；
E, mold temperature constant temperature 10min~30min in step D, toward burner hearth inside be filled with nitrogen, in 10min~30min
Mold is down to room temperature；
F, it opens bell to take out product, finished product glass sealed diode can be obtained.
The beneficial effects of the present invention are:
1, compared with prior art, the present invention uses the tungsten closest with silicon materials thermal expansion coefficient as electrode material
Material, eliminates the silver-bearing copper tin solder layer that must be used in the prior art, not only simplifies metallurgical bonding glass sealed diode product
Structure improves production efficiency, while reducing the dosage of precious metals silver, also effectively improves between product each section
Thermal matching, by the operating temperature range of product by existing -55 DEG C to 150 DEG C, promotion has arrived -55 DEG C to 175 DEG C, improves
Product environmental suitability in a high temperauture environment.
2, the softening temperature for the glass-tube that compared with prior art, the present invention uses is increased to by 550 DEG C of the prior art
638 DEG C, product has been widened when in use to the compatibility of welding process, can satisfy 638 DEG C, resistance to soldering heat requirement in 1 minute.
3, the metallurgical bonding glass sealed diode product of prior art production is overcome due to thermally expanding between internal each component
Coefficient haves the shortcomings that the reason of larger difference and causes anti-surge forward current ability weak, by the anti-surge forward current energy of product
Power is effectively promoted to 100A or more, has been expanded metallurgical bonding glass sealed diode product in the whole of 1A or more by being no more than 30A at present
Application on stream and Schottky barrier diodes.
4, the metallurgical bonding glass sealed diode product of prior art production is overcome due to thermally expanding between internal each component
Coefficient haves the shortcomings that the reason of larger difference and causes anti-reflective weaker to surge power ability, by product anti-reflective to surge power
Ability by present be no more than 400W, be effectively promoted to 1500W or more, expanded metallurgical bonding glass sealed diode product in 500W
Application to the TVS product of power various between 1500W.
5, the metallurgical bonding glass sealed diode interiors of products component for overcoming prior art production is more, and thermal conductivity is poor
Disadvantage, the heat produced when product can be worked are transmitted to both ends in time, and the heat power consumption that can bear product is by existing skill
The 1.5W of art once promotes 5W or more, meets the production need of the voltage adjustment diode of the 5W such as 1N5378 and following heat power consumption
It wants.
6, entire production process is not used or using purified gases such as minimal amount of nitrogen, is not generated any poisonous and hazardous
Substance not only reduces the logistics support pressure of production process, while whole process is green and pollution-free.
Detailed description of the invention
Fig. 1 is the glass sealed diode perspective view of the explosion of two-way straight cutting structure in the present invention；
Fig. 2 is the glass sealed diode perspective view of the explosion of U-shaped surface mounting structure in the present invention；
Fig. 3 is that the present invention produces mold structure diagram used in the glass sealed diode of two-way straight cutting structure；
Fig. 4 is that the present invention produces mold structure diagram used in the glass sealed diode of U-shaped surface mounting structure；
Fig. 5 is the structure that diode to be processed is packed into mold when producing the glass sealed diode of two-way straight cutting structure in the present invention
Schematic diagram.
Fig. 6 is diode loading mold to be processed when producing the glass sealed diode of U-shaped surface mounting structure in the present invention
Structural schematic diagram.
In figure: 1- electrode A, 2- electrode B, 3- chip, 4- glass-tube, 5- lower die, 6- upper mold, 51- drag chamber, 61- upper mold
Type chamber, the upper surface 7- electrode C, 8- electrode D, 31- metalization layer, 32- lower surface metal layer.
Specific embodiment
Technical solution of the present invention is further described with reference to the accompanying drawing, but claimed range is not limited to institute
It states.
As shown in Figure 1 and Figure 2, a kind of metallurgical bonding metallurgical bonding glass sealed diode structure, including electrode A 1, electrode B 2, core
Piece 3 and glass-tube 4, the electrode A 1, electrode B 2 and chip 3 are all set in glass-tube 4, the top and bottom difference of the chip 3
It is provided with upper surface metalization layer 31 and lower surface metal layer 32, the upper surface metalization layer 31 is connected with electrode B 2, under
Side metallization 32 is connected with electrode A 1, is realized electrically between the chip 3 and electrode A 1 and electrode B 2 by Diffusion Welding
Connection, and the buffer layer material of Diffusion Welding is respectively upper surface metalization layer 31 and lower surface metal layer 32；The electrode
A1 and the material of electrode B 2 are tungsten；The material of the upper surface metalization layer 31 and lower surface metal layer 32 is silver.This
The sealing-in of Diffusion Welding and glass-tube 4 between chip 3 described in invention and electrode A 1 and electrode B 2 synchronously complete to be formed one it is whole
Body, i.e., during welding, the sealing-in of Diffusion Welding and glass-tube 4 between chip 3 and electrode 1A and electrode B 2 is to complete together
's.The technical program uses the tungsten closest with silicon materials thermal expansion coefficient as electrode material, eliminates in the prior art
The silver-bearing copper tin solder layer that must be used, not only simplifies the structure of metallurgical bonding glass sealed diode product, reduces precious metal
Silver dosage, also effectively improve the thermal matching between product each section, by the operating temperature range of product by it is existing-
55 DEG C to 150 DEG C, promotion has arrived -55 DEG C to 175 DEG C, improves product environmental suitability in a high temperauture environment；Product is resisted
Surge forward current ability is effectively promoted to 100A or more, has been expanded the production of metallurgical bonding glass sealed diode by being no more than 30A at present
Application of the product in the rectification of 1A or more and Schottky barrier diodes；By ability from product anti-reflective to surge power by present not
More than 400W, it is effectively promoted to 1500W or more, has expanded metallurgical bonding glass sealed diode product in 500W to each between 1500W
Application on the TVS product of kind power；Overcome the prior art production metallurgical bonding glass sealed diode interiors of products component compared with
More, the poor disadvantage of thermal conductivity, the heat power consumption that can bear product once promotes 5W or more by the 1.5W of the prior art.
Glass sealed diode of the present invention is two-way straight cutting structure or U-shaped surface mounting structure, and Fig. 1 is two-way straight cutting knot
Structure, electrode A 1 and electrode B 2 are in-line structure；Fig. 2 is U-shaped surface mounting structure, and electrode C7 and electrode D8 are T shape knot
Structure, electrode C7, electrode D8 form U-shaped surface mounting structure with after 3 welding fabrication of chip respectively.
The chip 3 is GPP chip, and the material of side metallization and lower surface metal layer is silver thereon.
It is realized and is electrically connected by diffusion welding (DW) between the electrode A 1, electrode B 2 and chip 3, be a kind of metallurgical bonding knot
Structure, the buffer layer material of Diffusion Welding are the metallization layer material of 3 upper and lower surfaces of chip, as silver-colored.
The thermal expansion coefficient comparison of silicon involved in the present invention, tungsten, Dumet wire and silver-bearing copper soldering piece (Ag60Cu30Sn10)
It is as shown in table 1 below:
Table 1: electrode material thermal expansion coefficient comparison
A kind of method that metallurgical bonding produces above-mentioned glass sealed diode, steps are as follows for specific method:
(1) component assembles: glass-tube 4, electrode A 1 and chip 3 are fitted into lower die, and are packed into electrode B 2 in upper mold, then
Upper mold is tipped upside down in lower die, so that component assembles in mold forms diode, then applies weight in 2 upper end of electrode B
For the briquetting of 2g-15g；As shown in Figures 3 to 6, mold employed in the technical program includes lower die 5 and upper mold 6, under described
It is provided with drag chamber 51 on mould 5, model cavity 61 is provided in upper mold 6, wherein drag chamber 51 and upper model cavity 61 are coaxial,
And the size of drag chamber 51 and the outer diameter of glass-tube 4 match, the size of upper model cavity 61 and the size of electrode match；For just
In inserting electrode, the drag chamber 51 and upper model cavity 61 are in communication with the outside.As shown in figure 3, for producing direct insertion glass
The diameter of the upper model cavity 61 of the mold of sealed diode is less than the diameter of drag chamber 51；As shown in figure 4, for producing U-shaped table
The diameter of the upper model cavity 61 of the mold of face paste assembling structure diode and the diameter of drag chamber 51 are equal.
As shown in figure 5, glass-tube 4 is placed in drag chamber 51, both ends when assembling the diode of two-way straight cutting structure
Electrode A 1, electrode A 2 and chip 3 are all set in glass-tube 4, then again tip upside down on upper mold 6 in lower die 5, will finally be assembled two-way
The mold of straight cutting structure diodes is put into sintering furnace and is sintered.As shown in fig. 6, in two poles of U-shaped surface mounting structure
Glass-tube 4 is placed in drag chamber 51 by Guan Shi, and two end electrodes C7, electrode D8 and chip 3 are all set in glass-tube 4, then again will
Upper mold 6 tips upside down in lower die 5, and the mold for assembling two-way straight cutting structure diodes is finally put into sintering furnace and is sintered.
(2) it is sintered: assembled diode in step (1) is sintered, sintering method is hot wall type vacuum-sintering
Or cold wall type vacuum-sintering.
Steps are as follows for the hot wall type vacuum sintering method:
A, it will be equipped in step (1) in the mold push-in vacuum sintering furnace boiler tube of diode；
B, boiler tube in step A is evacuated；
C, when in step B boiler tube internal vacuum be lower than 1 × 10-4Heating is opened when Pa, and by temperature in boiler tube in 10min
720 DEG C ± 20 DEG C are warming up in~30min；
D, by thermostatic 10min~30min in boiler tube in step C；
E, diode is down to room temperature in 10min~30min；
F, it opens vent valve to take out diode from sintering furnace boiler tube, finished product glass sealed diode can be obtained.
The hot wall type vacuum-sintering is produced using hot wall type vacuum sintering furnace.
Steps are as follows for the cold wall type vacuum sintering method:
A, the mold equipped with diode is put into the burner hearth of vacuum sintering furnace, and bell is covered；
B, nitrogen will be filled in sintering furnace after vacuum-sintering stove evacuation 10s~30s；
C, burner hearth internal vacuum is evacuated to again after step B is filled with nitrogen in sintering furnace lower than 1 × 10-4Pa, and
It is powered to graphite jig, mold temperature is made to be warming up to 720 DEG C ± 20 DEG C in 10min~30min；
D, by 720 ± 20 DEG C of constant temperature 10min~30min of mold temperature in step C；
E, mold temperature constant temperature 10min~30min in step D, toward burner hearth inside be filled with nitrogen, in 10min~30min
It is interior that mold is down to room temperature；
F, it opens bell to take out product, finished product glass sealed diode can be obtained.
The cold wall type vacuum sintering method is produced using cold wall type vacuum sintering furnace.
Heretofore described glass-tube 4 uses Glass8652 glass-tube, and glass-tube softening point temperature is 638 DEG C, the work of glass-tube highest
Temperature is 900 DEG C；Chip upper and lower surfaces metallization layer material is silver；Silver point is 960 DEG C, and silver-colored Diffusion Welding temperature is
480 DEG C~768 DEG C.It is thus determined that the temperature of product sinter molding is 720 DEG C ± 20 DEG C.The technical program is used, so that glass-tube 4
Softening temperature be increased to 638 DEG C by 550 DEG C of the prior art, widened product when in use to the compatibility of welding process
Property, it can satisfy 638 DEG C, resistance to soldering heat requirement in 1 minute；Entire production process does not use or using the purifying such as minimal amount of nitrogen
Gas does not generate any poisonous and hazardous substance, not only reduces the logistics support pressure of production process, while whole process is green
Color is environment friendly and pollution-free.
Claims (2)
1. a kind of production method of metallurgical bonding glass sealed diode, it is characterised in that: the metallurgical bonding glass sealed diode includes
Electrode A (1), electrode B (2), chip (3) and glass-tube (4), the electrode A (1), electrode B (2) and chip (3) are all set in glass-tube
(4) it in, is realized and is electrically connected by Diffusion Welding between the chip (3) and electrode A (1) and electrode B (2), and diffusion welding (DW)
Buffer layer material is respectively the upper surface metalization layer (31) and lower surface metal layer (32) of chip (3), chip (3) and electrode
The sealing-in of Diffusion Welding and glass-tube (4) between A (1) and electrode B (2) synchronously completes to form an entirety；The electrode A (1)
Material with electrode B (2) is tungsten；The chip (3) is GPP chip, and side metallization (31) and lower surface gold thereon
The material of categoryization layer (32) is silver；The glass-tube (4) uses Glass8652 glass-tube, the softening point temperature of Glass8652 glass-tube
It is 638 DEG C；The diode uses sinter molding, and the temperature of sinter molding is 720 DEG C ± 20 DEG C；Specific production method steps
It is as follows:
(1) component assembles: glass-tube (4), electrode A (1) and chip are fitted into lower die, and are packed into electrode B (2) in upper mold,
Upper mold is tipped upside down in lower die again, so that component assembles in mold forms diode, is then applied in the upper end of electrode B (2)
Add weight is the briquetting of 2g-15g；
(2) it is sintered: assembled diode in step (1) is sintered, sintering method is hot wall type vacuum-sintering；
Steps are as follows for the hot wall type vacuum sintering method:
A, it will be equipped in step (1) in the mold push-in vacuum sintering furnace boiler tube of diode；
B, boiler tube in step A is evacuated；
C, when in step B boiler tube internal vacuum be lower than 1 × 10-4When Pa open heating, and by temperature in boiler tube 10min~
720 DEG C ± 20 DEG C are warming up in 30min；
D, by thermostatic 10min~30min in boiler tube in step C；
E, diode is down to room temperature in 10min~30min；
F, vent valve is opened to take out diode from sintering furnace boiler tube to get to finished product glass sealed diode.
2. a kind of production method of metallurgical bonding glass sealed diode, it is characterised in that: the metallurgical bonding glass sealed diode includes
Electrode A (1), electrode B (2), chip (3) and glass-tube (4), the electrode A (1), electrode B (2) and chip (3) are all set in glass-tube
(4) it in, is realized and is electrically connected by Diffusion Welding between the chip (3) and electrode A (1) and electrode B (2), and diffusion welding (DW)
Buffer layer material is respectively the upper surface metalization layer (31) and lower surface metal layer (32) of chip (3), chip (3) and electrode
The sealing-in of Diffusion Welding and glass-tube (4) between A (1) and electrode B (2) synchronously completes to form an entirety；The electrode A (1)
Material with electrode B (2) is tungsten；The chip (3) is GPP chip, and side metallization (31) and lower surface gold thereon
The material of categoryization layer (32) is silver；The glass-tube (4) uses Glass8652 glass-tube, the softening point temperature of Glass8652 glass-tube
It is 638 DEG C；The diode uses sinter molding, and the temperature of sinter molding is 720 DEG C ± 20 DEG C；Specific production method steps
It is as follows:
(1) component assembles: glass-tube (4), electrode A (1) and chip are fitted into lower die, and are packed into electrode B (2) in upper mold,
Upper mold is tipped upside down in lower die again, so that component assembles in mold forms diode, is then applied in the upper end of electrode B (2)
Add weight is the briquetting of 2g-15g；
(2) it is sintered: assembled diode in step (1) is sintered, sintering method is cold wall type vacuum-sintering；
Steps are as follows for the cold wall type vacuum sintering method:
A, the mold equipped with diode is put into the burner hearth of vacuum sintering furnace, and bell is covered；
B, nitrogen will be filled in sintering furnace after vacuum-sintering stove evacuation 10s~30s；
C, burner hearth internal vacuum is evacuated to again after step B is filled with nitrogen in sintering furnace lower than 1 × 10-4Pa, and give stone
Black mold is powered, and mold temperature is made to be warming up to 720 ± 20 DEG C in 10min~30min；
D, by 720 DEG C of ± 20 DEG C of constant temperature 10min~30min of mold temperature in step C；
E, mold temperature constant temperature 10min~30min in step D, toward burner hearth inside be filled with nitrogen, by mould in 10min~30min
Tool is down to room temperature；
F, bell is opened to take out product to get finished product glass sealed diode is arrived.
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| CN201610417019.5A CN105845740B (en) | 2016-06-14 | 2016-06-14 | A kind of metallurgical bonding glass sealed diode structure and production method |
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| CN107170727A (en) * | 2017-06-02 | 2017-09-15 | 朝阳无线电元件有限责任公司 | A kind of I classes metallurgical bonding diode design and manufacturing technology |
| CN113192902A (en) * | 2021-04-27 | 2021-07-30 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2640046Y (en) * | 2003-06-30 | 2004-09-08 | 上海新玻电子有限公司 | Improved glass sealed diode |
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
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| JP4433629B2 (en) * | 2001-03-13 | 2010-03-17 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
| CN105336768B (en) * | 2015-10-13 | 2018-10-26 | 济南市半导体元件实验所 | The packaging technology of highly reliable surface mount glass sealed diode |
| CN205723553U (en) * | 2016-06-14 | 2016-11-23 | 张路非 | A kind of metallurgical bonding glass sealed diode structure |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2640046Y (en) * | 2003-06-30 | 2004-09-08 | 上海新玻电子有限公司 | Improved glass sealed diode |
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
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