CN113192902A - High-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and manufacturing method thereof - Google Patents
High-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and manufacturing method thereof Download PDFInfo
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- CN113192902A CN113192902A CN202110462103.XA CN202110462103A CN113192902A CN 113192902 A CN113192902 A CN 113192902A CN 202110462103 A CN202110462103 A CN 202110462103A CN 113192902 A CN113192902 A CN 113192902A
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- 239000011521 glass Substances 0.000 title claims abstract description 103
- 238000002161 passivation Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000005538 encapsulation Methods 0.000 title claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 55
- 239000011733 molybdenum Substances 0.000 claims abstract description 55
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 37
- 239000000843 powder Substances 0.000 claims abstract description 32
- 238000004806 packaging method and process Methods 0.000 claims abstract description 10
- 238000005272 metallurgy Methods 0.000 claims abstract description 7
- 230000007797 corrosion Effects 0.000 claims description 45
- 238000005260 corrosion Methods 0.000 claims description 45
- 238000001704 evaporation Methods 0.000 claims description 29
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 230000008878 coupling Effects 0.000 claims description 25
- 238000010168 coupling process Methods 0.000 claims description 25
- 238000005859 coupling reaction Methods 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 23
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 16
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 239000011574 phosphorus Substances 0.000 claims description 16
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 16
- 238000005336 cracking Methods 0.000 claims description 14
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- 238000000227 grinding Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 14
- 238000004017 vitrification Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000009835 boiling Methods 0.000 claims description 7
- 239000005388 borosilicate glass Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- 238000003698 laser cutting Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 7
- 230000035882 stress Effects 0.000 abstract description 4
- 229910000831 Steel Inorganic materials 0.000 abstract description 3
- 230000032683 aging Effects 0.000 abstract description 3
- 239000010959 steel Substances 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83417—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Abstract
The invention provides a high-temperature metallurgy bonding glass passivation entity packaging surface-mounted diode and a manufacturing method thereof. By adopting the invention, the chip and the molybdenum electrode lead are directly welded together through the evaporated aluminum layers on the two surfaces of the chip, and the glass powder is encapsulated, so that the electric connection is reliable, and the open circuit failure is not easy to occur; the thermal expansion coefficients of the molybdenum and the glass are 4-5, and are closer to those of the glass and the copper-clad steel lead, so that the matching degree of the structural material is improved, the stress of an interface between the molybdenum electrode and the passivated glass is reduced, the use reliability is improved, and the probability of open-circuit aging is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a high-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and a manufacturing method thereof.
Background
With the development of electronic systems towards miniaturization and light weight, the demand for miniaturized patch devices is increasing. Among them, the surface-mounted device (represented by LL-35 series) of the glass envelope is widely used due to its advantages of low cost and small volume.
However, the glass shell surface-mounted device has three problems, firstly, the glass shell surface-mounted device is an empty-sealed device, and the space is too small, so that the accurate leakage detection is inconvenient; secondly, most of the glass shell surface-mounted devices are in a compression joint structure, and open circuit failure occurs in the application process; thirdly, the matching between the structural materials is not good, and the interface of the materials generates large stress for a long time due to the difference of thermal expansion, so that the materials age too fast, and the chips have mesa breakdown to fail.
Disclosure of Invention
In order to solve the technical problems, the invention provides a high-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and a manufacturing method thereof.
The invention is realized by the following technical scheme.
The invention provides a high-temperature metallurgy bonding glass passivation entity packaging surface-mounted diode which comprises a chip, wherein molybdenum columns are welded at two ends of the chip through aluminum evaporation layers, the molybdenum columns and the chip are packaged in passivation glass, an electric coupling surface with the diameter larger than that of the molybdenum columns is arranged at one end, far away from the chip, of the molybdenum columns, the end face of the electric coupling surface is a plane, and the electric coupling surface extends out of the passivation glass.
The electric coupling surface and the molybdenum column are integrally formed.
The cross section of the electric coupling surface is larger than that of the passivated glass.
The thickness of the aluminum evaporation layer is 6-16 mu m.
The chip is of a trapezoidal structure.
The chip is manufactured by adopting an N-type monocrystalline silicon wafer with a single-side lapping range from 200 to 350 mu m.
The invention also provides a manufacturing method of the high-temperature metallurgical bonding glass passivation entity packaging surface-mounted diode, which comprises the following steps:
step one, chip processing, namely selecting an N-type monocrystalline silicon wafer with the resistivity of 0.003-500 omega-cm, grinding the wafer from a single side to 200-350 microns, performing phosphorus-boron diffusion, and removing a borosilicate glass layer formed on a boron diffusion surface by using compressed air carrying carborundum to obtain a PN junction silicon wafer, wherein the depth of a phosphorus surface junction is 10-80 microns, the square resistance is less than or equal to 3 omega/□, the depth of a boron surface junction is 10-80 microns, and the square resistance is less than or equal to 5 omega/□;
step two, evaporating aluminum and cracking, namely evaporating aluminum with the thickness of 6-16 mu m on the reserved phosphorus diffusion surface, finely grinding the surface without evaporating aluminum, then keeping the surface at 450-500 ℃ for 5-20 min for alloy treatment, and then cracking;
step three, molybdenum electrode processing, namely cutting and processing a molybdenum sheet with the diameter of phi 0.8-phi 8mm to obtain a molybdenum column and an electric coupling surface, wherein the diameter of the molybdenum column is the same as that of the chip;
step four, assembling, namely assembling the molybdenum columns at two ends of the chip by using the aluminum evaporated in the step two as a solder layer, and then putting the chip into a sintering furnace for welding; (assembled as shown in figure 2.)
Step five, performing mesa corrosion, namely putting the mesa into a KOH solution with the concentration of 2-12%, performing mesa corrosion for 2-25 min at the temperature of 80-100 ℃, washing the mesa by hot deionized water after corrosion, performing boiling treatment, alternately and fully cleaning by cold and hot deionized water, putting the mesa into a mixed solution of hydrogen peroxide with the mass percentage of more than or equal to 30%, hydrogen peroxide with the mass percentage of more than or equal to 85% and ionized water according to the ratio of 1:1:1.3 after cleaning, and passivating for 1-10 min at the temperature of 55-60 ℃;
and sixthly, passivating glass encapsulation, namely designing and processing a corresponding glass powder filling mold according to the external dimension requirement, placing the product in the glass powder filling mold to be filled with glass slurry, and then placing the product in a vitrification furnace to form a passivated glass encapsulated body.
The carborundum in the first step is carborundum representing specification 302# or 303# or a mixture of the two types of carborundum, and the air pressure of compressed air is 100-500 KPa.
And the second step of splitting is to split a large piece into the required chip size by adopting an ultrasonic, scribing or laser cutting mode.
And the welding process in the fourth step is that under the condition that the vacuum degree is more than or equal to 3.4X10-3pa, the temperature is increased to 660-700 ℃ at the speed of 5-25 ℃/min, the temperature is kept for 2-5 min, and then the temperature is reduced to below 100 ℃ at the speed of less than or equal to 5 ℃/min, and the product is taken out.
The glass slurry in the sixth step is a mixture of 3g of glass powder and 1ml of water.
And the vitrification process in the sixth step is to heat up to 660 ℃ in 45-65 min at the speed of 5-25 ℃/min, keep for 2-15 min, and then cool down at the speed of less than or equal to 5 ℃/min.
The invention has the beneficial effects that:
forming an N + region on the back of the N-type silicon wafer substrate by a primary phosphorus/boron diffusion method, wherein the N + region is used for forming good ohmic contact with an electrode lead, and forming a P region on the front of the N-type silicon wafer substrate to obtain a core PN junction of the diode; the chip and the molybdenum electrode lead are directly welded together through the aluminum evaporation layers on the two surfaces of the chip, and the glass powder is encapsulated, so that the electric connection is reliable, and the open circuit failure is not easy to occur; the thermal expansion coefficients of the molybdenum and the glass are 4-5, and are closer to those of the glass and the copper-clad steel lead, so that the matching degree of the structural material is improved, the stress of an interface between the molybdenum electrode and the passivated glass is reduced, the use reliability is improved, and the probability of open-circuit aging is reduced.
Drawings
Fig. 1 is a schematic structural view of the present invention.
FIG. 2 is a schematic structural diagram of the chip of the present invention assembled with a molybdenum column.
In the figure: 1-chip; 2-molybdenum column; 3-passivating the glass; 4-electrical coupling plane.
Detailed Description
The technical solution of the present invention is further described below, but the scope of the claimed invention is not limited to the described.
Fig. 1 shows a schematic structural diagram of the present invention:
the invention provides a pyrometallurgical bonding glass passivation entity encapsulation surface-mounted diode which comprises a chip 1, wherein molybdenum columns 2 are welded at two ends of the chip 1 through aluminum evaporation layers, the molybdenum columns 2 and the chip 1 are encapsulated in passivation glass 3, an electric coupling surface 4 with the diameter larger than that of the molybdenum columns 2 is arranged at one end, far away from the chip 1, of the molybdenum columns 2, the end face of the electric coupling surface 4 is a plane, and the electric coupling surface 4 extends out of the passivation glass 3.
Forming an N + region on the back of the N-type silicon wafer substrate by a primary phosphorus/boron diffusion method, wherein the N + region is used for forming good ohmic contact with an electrode lead, and forming a P region on the front of the N-type silicon wafer substrate to obtain a core PN junction of the diode; the chip 1 and the molybdenum electrode lead are directly welded together through the aluminum evaporation layers on the two sides of the chip 1, and the glass powder is encapsulated, so that the electric connection is reliable, and the open circuit failure is not easy to occur; the thermal expansion coefficients of the molybdenum and the glass are 4-5, and are closer to those of the glass and the copper-clad steel lead, so that the matching degree of the structural material is improved, the stress of an interface between the molybdenum electrode and the passivated glass 3 is reduced, the use reliability is improved, and the probability of open-circuit aging is reduced.
The electric coupling surface 4 is integrally formed with the molybdenum column 2. The material consistency is better, and the current passing rate is improved.
The cross section of the electric coupling surface 4 is larger than the passivated glass 3. When the electrode is used with an external device through the mounting of the electric coupling surfaces 4 on the two sides, the electric coupling performance between the electrode and an external power supply is improved, and therefore the working stability is improved.
The thickness of the aluminum evaporation layer is 6-16 mu m. The molybdenum column 2 and the chip 1 are good in connection integrity, large in current passing rate and stable in diode work.
The chip 1 is in a trapezoidal structure. The bonding degree between the chip 1 and the passivation glass 3 is improved, and the shock resistance is strong.
The chip 1 is manufactured by adopting an N-type monocrystalline silicon wafer with a single-side lapping range from 200 to 350 mu m.
The invention also provides a manufacturing method of the high-temperature metallurgical bonding glass passivation entity packaging surface-mounted diode, which comprises the following steps:
processing a chip 1, selecting an N-type monocrystalline silicon wafer with the resistivity of 0.003-500 omega-cm, grinding the wafer from a single side to 200-350 mu m, performing phosphorus-boron diffusion, and removing a borosilicate glass layer formed on a boron diffusion surface by using compressed air carrying carborundum to obtain a PN junction silicon wafer, wherein the depth of a phosphorus surface junction is 10-80 mu m, the square resistance is less than or equal to 3 omega/□, the depth of a boron surface junction is 10-80 mu m, and the square resistance is less than or equal to 5 omega/□;
step two, evaporating aluminum and cracking, namely evaporating aluminum with the thickness of 6-16 mu m on the reserved phosphorus diffusion surface, finely grinding the surface without evaporating aluminum, then keeping the surface at 450-500 ℃ for 5-20 min for alloy treatment, and then cracking;
step three, molybdenum electrode processing, namely cutting and processing a molybdenum sheet with the diameter of phi 0.8-phi 8mm to obtain a molybdenum column 2 and an electric coupling surface 4, wherein the diameter of the molybdenum column 2 is the same as that of the chip 1;
step four, assembling, namely assembling the molybdenum columns 2 at two ends of the chip 1 by using the evaporated aluminum in the step two as a solder layer, and then putting the chip into a sintering furnace for welding; (assembled as shown in figure 2.)
Step five, performing mesa corrosion, namely putting the mesa into a KOH solution with the concentration of 2-12%, performing mesa corrosion for 2-25 min at the temperature of 80-100 ℃, washing the mesa by hot deionized water after corrosion, performing boiling treatment, alternately and fully cleaning by cold and hot deionized water, putting the mesa into a mixed solution of hydrogen peroxide with the mass percentage of more than or equal to 30%, hydrogen peroxide with the mass percentage of more than or equal to 85% and ionized water according to the ratio of 1:1:1.3 after cleaning, and passivating for 1-10 min at the temperature of 55-60 ℃;
and sixthly, packaging the passivated glass 3, designing and processing a corresponding glass powder filling mold according to the external dimension requirement, placing the product in the glass powder filling mold to be filled with glass slurry, and then placing the product in a vitrification furnace to form a passivated glass 3 packaged body.
The carborundum in the first step is carborundum representing specification 302# or 303# or a mixture of the two types of carborundum, and the air pressure of compressed air is 100-500 KPa.
And the second step of splitting is to split a large piece into the required size of the chip 1 by adopting an ultrasonic, scribing or laser cutting mode.
And the welding process in the fourth step is that under the condition that the vacuum degree is more than or equal to 3.4X10-3pa, the temperature is increased to 660-700 ℃ at the speed of 5-25 ℃/min, the temperature is kept for 2-5 min, and then the temperature is reduced to below 100 ℃ at the speed of less than or equal to 5 ℃/min, and the product is taken out.
The glass slurry in the sixth step is a mixture of 3g of glass powder and 1ml of water.
And the vitrification process in the sixth step is to heat up to 660 ℃ in 45-65 min at the speed of 5-25 ℃/min, keep for 2-15 min, and then cool down at the speed of less than or equal to 5 ℃/min.
EXAMPLE one (12V/0.25W zener diode)
The manufacturing method of the high-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode comprises the following steps:
processing a chip 1, selecting an N-type monocrystalline silicon wafer with the resistivity of 0.005-0.006 omega-cm, grinding the wafer from a single surface to 220 +/-10 mu m, performing phosphorus-boron diffusion, and removing a borosilicate glass layer formed on a boron diffusion surface by using compressed air carrying carborundum to obtain a PN junction silicon wafer, wherein the junction depth of the phosphorus surface is 30-40 mu m, the square resistance is less than or equal to 3 omega/□, the junction depth of the boron surface is 30-40 mu m, and the square resistance is less than or equal to 5 omega/□;
step two, evaporating aluminum and cracking, namely evaporating aluminum with the thickness of 10-11 mu m on the reserved phosphorus diffusion surface, finely grinding the surface without evaporating aluminum, then keeping the surface at 500 +/-10 ℃ for 5-20 min for alloy treatment, and then cracking;
step three, molybdenum electrode processing, namely cutting and processing a molybdenum sheet with the diameter of 1.5mm to obtain a molybdenum column 2 and an electric coupling surface 4, wherein the diameter of the molybdenum column 2 is the same as that of the chip 1;
step four, assembling, namely assembling the molybdenum columns 2 at two ends of the chip 1 by using the evaporated aluminum in the step two as a solder layer, and then putting the chip into a sintering furnace for welding; (assembled as shown in figure 2.)
The welding process comprises the steps of heating to 660-700 ℃ at the speed of 12 ℃/min under the condition that the vacuum degree is more than or equal to 3.4X10-3pa, keeping the temperature for 3min, and cooling to below 100 ℃ at the speed of less than or equal to 3 ℃/min to take out a product;
step five, performing mesa corrosion, namely putting the mesa corrosion into a 2% KOH solution, performing mesa corrosion for 5min at the temperature of 90 ℃, washing the mesa corrosion with hot deionized water after the mesa corrosion, performing boiling treatment, alternately and fully cleaning the mesa corrosion with cold and hot deionized water, putting the mesa corrosion into a mixed solution of hydrogen peroxide with the mass percentage of more than or equal to 30%, hydrogen peroxide with the mass percentage of more than or equal to 85% and ionized water in a ratio of 1:1:1.3 after the mesa corrosion is cleaned, and passivating the mesa corrosion for 1-10 min at the temperature of 55-60 ℃;
step six, packaging the passivated glass 3, designing and processing a corresponding glass powder filling mold according to the external dimension requirement, placing the product in the glass powder filling mold to be filled with glass slurry, and then placing the product in a vitrification furnace to form a passivated glass 3 packaged body;
the glass slurry is a mixture of glass powder and water, wherein the weight of the glass powder is 3g and the weight of the glass powder is 1 ml;
the vitrification process is that the temperature is raised at 15 ℃/min, raised to 660 ℃ in 45-65 min, kept for 6min, and then lowered at the speed of less than or equal to 5 ℃/min.
EXAMPLE two (1000V/0.25A rectifier diode)
The manufacturing method of the high-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode comprises the following steps:
processing a chip 1, selecting an N-type monocrystalline silicon wafer with the resistivity of 18-20 omega-cm, grinding the wafer from a single side to 220 +/-10 mu m, performing phosphorus-boron diffusion, and removing a borosilicate glass layer formed on a boron diffusion surface by using compressed air carrying carborundum to obtain a PN junction silicon wafer, wherein the depth of the phosphorus surface is 40-50 mu m, the square resistance is less than or equal to 3 omega/□, the depth of the boron surface is 40-50 mu m, and the square resistance is less than or equal to 5 omega/□;
step two, evaporating aluminum and cracking, namely evaporating aluminum with the thickness of 10-11 mu m on the reserved phosphorus diffusion surface, finely grinding the surface without evaporating aluminum, then keeping the surface at 500 +/-10 ℃ for 5-10 min for alloy treatment, and then cracking;
step three, molybdenum electrode processing, namely cutting and processing a molybdenum sheet with the diameter of 1.5mm to obtain a molybdenum column 2 and an electric coupling surface 4, wherein the diameter of the molybdenum column 2 is the same as that of the chip 1;
step four, assembling, namely assembling the molybdenum columns 2 at two ends of the chip 1 by using the evaporated aluminum in the step two as a solder layer, and then putting the chip into a sintering furnace for welding; (assembled as shown in figure 2.)
The welding process comprises the steps of heating to 660-700 ℃ at the speed of 12 ℃/min under the condition that the vacuum degree is more than or equal to 3.4X10-3pa, keeping the temperature for 3min, and cooling to below 100 ℃ at the speed of less than or equal to 3 ℃/min to take out a product;
step five, performing mesa corrosion, namely putting the mesa corrosion into a 6% KOH solution, performing mesa corrosion for 5min at the temperature of 90 ℃, washing the mesa corrosion with hot deionized water after the mesa corrosion, performing boiling treatment, alternately and fully cleaning the mesa corrosion with cold and hot deionized water, putting the mesa corrosion into a mixed solution of hydrogen peroxide with the mass percentage of more than or equal to 30%, hydrogen peroxide with the mass percentage of more than or equal to 85% and ionized water according to the ratio of 1:1:1.3 after the mesa corrosion is cleaned, and passivating the mesa corrosion for 2min at the temperature of 55-60 ℃;
step six, packaging the passivated glass 3, designing and processing a corresponding glass powder filling mold according to the external dimension requirement, placing the product in the glass powder filling mold to be filled with glass slurry, and then placing the product in a vitrification furnace to form a passivated glass 3 packaged body;
the glass slurry is a mixture of glass powder and water, wherein the weight of the glass powder is 3g and the weight of the glass powder is 1 ml;
the vitrification process is that the temperature is raised at 15 ℃/min, raised to 660 ℃ in 45-65 min, kept for 6min, and then lowered at the speed of less than or equal to 5 ℃/min.
EXAMPLE III (12V/5W zener diode)
The manufacturing method of the high-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode comprises the following steps:
processing a chip 1, selecting an N-type monocrystalline silicon wafer with the resistivity of 0.006 omega-cm-0.006 omega-cm, grinding the silicon wafer from a single surface to 220 +/-10 mu m, performing phosphorus-boron diffusion, and removing a borosilicate glass layer formed on a boron diffusion surface by using compressed air carrying carborundum to obtain a PN junction silicon wafer, wherein the junction depth of the phosphorus surface is 40-50 mu m, the square resistance is less than or equal to 3 omega/□, the junction depth of the boron surface is 40-50 mu m, and the square resistance is less than or equal to 5 omega/□;
step two, evaporating aluminum and cracking, namely evaporating aluminum with the thickness of 10-11 mu m on the reserved phosphorus diffusion surface, finely grinding the surface without evaporating aluminum, then keeping the surface at 500 +/-10 ℃ for 5-10 min for alloy treatment, and then cracking;
step three, molybdenum electrode processing, namely cutting and processing a molybdenum sheet with the diameter of 4mm to obtain a molybdenum column 2 and an electric coupling surface 4, wherein the diameter of the molybdenum column 2 is the same as that of the chip 1;
step four, assembling, namely assembling the molybdenum columns 2 at two ends of the chip 1 by using the evaporated aluminum in the step two as a solder layer, and then putting the chip into a sintering furnace for welding; (assembled as shown in figure 2.)
The welding process comprises the steps of heating to 660-700 ℃ at the speed of 12 ℃/min under the condition that the vacuum degree is more than or equal to 3.4X10-3pa, keeping the temperature for 3min, and cooling to below 100 ℃ at the speed of less than or equal to 3 ℃/min to take out a product;
step five, performing mesa corrosion, namely putting the mesa corrosion into a 2% KOH solution, performing mesa corrosion for 5min at the temperature of 90 ℃, washing the mesa corrosion with hot deionized water after the mesa corrosion, performing boiling treatment, alternately and fully cleaning the mesa corrosion with cold and hot deionized water, putting the mesa corrosion into a mixed solution of hydrogen peroxide with the mass percentage of more than or equal to 30%, hydrogen peroxide with the mass percentage of more than or equal to 85% and ionized water in a ratio of 1:1:1.3 after the mesa corrosion is cleaned, and passivating the mesa corrosion for 2min at the temperature of 55-60 ℃;
step six, packaging the passivated glass 3, designing and processing a corresponding glass powder filling mold according to the external dimension requirement, placing the product in the glass powder filling mold to be filled with glass slurry, and then placing the product in a vitrification furnace to form a passivated glass 3 packaged body;
the glass slurry is a mixture of glass powder and water, wherein the weight of the glass powder is 3g and the weight of the glass powder is 1 ml;
the vitrification process is that the temperature is raised at 15 ℃/min, raised to 660 ℃ in 45-65 min, kept for 6min, and then lowered at the speed of less than or equal to 5 ℃/min.
EXAMPLE four (1000V/5A rectifier diode)
The manufacturing method of the high-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode comprises the following steps:
processing a chip 1, selecting an N-type monocrystalline silicon wafer with the resistivity of 18-20 omega-cm, grinding the wafer from a single side to 220 +/-10 mu m, performing phosphorus-boron diffusion, and removing a borosilicate glass layer formed on a boron diffusion surface by using compressed air carrying carborundum to obtain a PN junction silicon wafer, wherein the depth of the phosphorus surface is 40-50 mu m, the square resistance is less than or equal to 3 omega/□, the depth of the boron surface is 40-50 mu m, and the square resistance is less than or equal to 5 omega/□;
step two, evaporating aluminum and cracking, namely evaporating aluminum with the thickness of 10-11 mu m on the reserved phosphorus diffusion surface, finely grinding the surface without evaporating aluminum, then keeping the surface at 500 +/-10 ℃ for 5-10 min for alloy treatment, and then cracking;
step three, molybdenum electrode processing, namely cutting and processing a molybdenum sheet with the diameter of 4mm to obtain a molybdenum column 2 and an electric coupling surface 4, wherein the diameter of the molybdenum column 2 is the same as that of the chip 1;
step four, assembling, namely assembling the molybdenum columns 2 at two ends of the chip 1 by using the evaporated aluminum in the step two as a solder layer, and then putting the chip into a sintering furnace for welding; (assembled as shown in figure 2.)
The welding process comprises the steps of heating to 660-700 ℃ at the speed of 12 ℃/min under the condition that the vacuum degree is more than or equal to 3.4X10-3pa, keeping the temperature for 3min, and cooling to below 100 ℃ at the speed of less than or equal to 3 ℃/min to take out a product;
step five, performing mesa corrosion, namely putting the mesa corrosion into a 6% KOH solution, performing mesa corrosion for 5min at the temperature of 90 ℃, washing the mesa corrosion with hot deionized water after the mesa corrosion, performing boiling treatment, alternately and fully cleaning the mesa corrosion with cold and hot deionized water, putting the mesa corrosion into a mixed solution of hydrogen peroxide with the mass percentage of more than or equal to 30%, hydrogen peroxide with the mass percentage of more than or equal to 85% and ionized water according to the ratio of 1:1:1.3 after the mesa corrosion is cleaned, and passivating the mesa corrosion for 2min at the temperature of 55-60 ℃;
step six, packaging the passivated glass 3, designing and processing a corresponding glass powder filling mold according to the external dimension requirement, placing the product in the glass powder filling mold to be filled with glass slurry, and then placing the product in a vitrification furnace to form a passivated glass 3 packaged body;
the glass slurry is a mixture of glass powder and water, wherein the weight of the glass powder is 3g and the weight of the glass powder is 1 ml;
the vitrification process is that the temperature is raised at 15 ℃/min, raised to 660 ℃ in 45-65 min, kept for 6min, and then lowered at the speed of less than or equal to 5 ℃/min.
Claims (10)
1. The utility model provides a high temperature metallurgy bonding glass passivation entity encapsulation table pastes diode which characterized in that: the chip comprises a chip (1), wherein molybdenum columns (2) are welded at two ends of the chip (1) through aluminum evaporation layers, the molybdenum columns (2) and the chip (1) are all packaged in passivated glass (3), one end, far away from the chip (1), of each molybdenum column (2) is provided with an electric coupling surface (4) with the diameter larger than that of each molybdenum column (2), the end face of each electric coupling surface (4) is a plane, and each electric coupling surface (4) extends out of the passivated glass (3).
2. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the electric coupling surface (4) and the molybdenum column (2) are integrally formed.
3. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the cross section of the electric coupling surface (4) is larger than that of the passivated glass (3).
4. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the thickness of the aluminum evaporation layer is 6-16 mu m.
5. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the chip (1) is of a trapezoidal structure.
6. The method of manufacturing a pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode as claimed in any one of claims 1 to 5, wherein: comprises the following steps of (a) carrying out,
processing a chip 1, selecting an N-type monocrystalline silicon wafer with the resistivity of 0.003-500 omega-cm, grinding the wafer from a single side to 200-350 mu m, performing phosphorus-boron diffusion, and removing a borosilicate glass layer formed on a boron diffusion surface by using compressed air carrying carborundum to obtain a PN junction silicon wafer, wherein the depth of a phosphorus surface junction is 10-80 mu m, the square resistance is less than or equal to 3 omega/□, the depth of a boron surface junction is 10-80 mu m, and the square resistance is less than or equal to 5 omega/□;
step two, evaporating aluminum and cracking, namely evaporating aluminum with the thickness of 6-16 mu m on the reserved phosphorus diffusion surface, finely grinding the surface without evaporating aluminum, then keeping the surface at 450-500 ℃ for 5-20 min for alloy treatment, and then cracking;
step three, molybdenum electrode processing, namely cutting and processing a molybdenum sheet with the diameter of phi 0.8-phi 8mm to obtain a molybdenum column 2 and an electric coupling surface 4, wherein the diameter of the molybdenum column 2 is the same as that of the chip 1;
step four, assembling, namely assembling the molybdenum columns 2 at two ends of the chip 1 by using the evaporated aluminum in the step two as a solder layer, and then putting the chip into a sintering furnace for welding; (assembled as shown in figure 2.)
Step five, performing mesa corrosion, namely putting the mesa into a KOH solution with the concentration of 2-12%, performing mesa corrosion for 2-25 min at the temperature of 80-100 ℃, washing the mesa by hot deionized water after corrosion, performing boiling treatment, alternately and fully cleaning by cold and hot deionized water, putting the mesa into a mixed solution of hydrogen peroxide with the mass percentage of more than or equal to 30%, hydrogen peroxide with the mass percentage of more than or equal to 85% and ionized water according to the ratio of 1:1:1.3 after cleaning, and passivating for 1-10 min at the temperature of 55-60 ℃;
and sixthly, packaging the passivated glass 3, designing and processing a corresponding glass powder filling mold according to the external dimension requirement, placing the product in the glass powder filling mold to be filled with glass slurry, and then placing the product in a vitrification furnace to form a passivated glass 3 packaged body.
7. The manufacturing method according to claim 6, wherein: the carborundum in the first step is carborundum representing specification 302# or 303# or a mixture of the two types of carborundum, and the air pressure of compressed air is 100-500 KPa.
8. The manufacturing method according to claim 6, wherein: and the second step of splitting is to split a large piece into the required size of the chip 1 by adopting an ultrasonic, scribing or laser cutting mode.
9. The manufacturing method according to claim 6, wherein: and the welding process in the fourth step is that under the condition that the vacuum degree is more than or equal to 3.4X10-3pa, the temperature is increased to 660-700 ℃ at the speed of 5-25 ℃/min, the temperature is kept for 2-5 min, and then the temperature is reduced to below 100 ℃ at the speed of less than or equal to 5 ℃/min, and the product is taken out.
10. The manufacturing method according to claim 6, wherein: the glass slurry in the sixth step is a mixture of 3g of glass powder and 1ml of water.
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