CN214477477U - High-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode - Google Patents
High-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode Download PDFInfo
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- CN214477477U CN214477477U CN202120884903.6U CN202120884903U CN214477477U CN 214477477 U CN214477477 U CN 214477477U CN 202120884903 U CN202120884903 U CN 202120884903U CN 214477477 U CN214477477 U CN 214477477U
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Abstract
The utility model provides a pyrometallurgical bonding glass passivation entity encapsulation table pastes diode, which comprises a chip, the welding of chip both ends has the molybdenum column through evaporating the aluminium lamination, and the molybdenum column all encapsulates in passivation glass with the chip, and the one end that the chip was kept away from to the molybdenum column is equipped with the electric coupling face that the diameter is greater than the molybdenum column, and the terminal surface of electric coupling face is the plane, and passivation glass is stretched out to the electric coupling face. By adopting the utility model, the chip and the molybdenum electrode lead are directly welded together through the aluminum evaporation layers on the two surfaces of the chip, and the glass powder is encapsulated, so that the electric connection is reliable, and the open circuit failure is not easy to occur; the thermal expansion coefficients of the molybdenum and the glass are 4-5, and are closer to those of the glass and the copper-clad steel lead, so that the matching degree of the structural material is improved, the stress of an interface between the molybdenum electrode and the passivated glass is reduced, the use reliability is improved, and the probability of open-circuit aging is reduced.
Description
Technical Field
The utility model relates to the field of semiconductor technology, concretely relates to high temperature metallurgy bonded glass passivation entity encapsulation table pastes diode.
Background
With the development of electronic systems towards miniaturization and light weight, the demand for miniaturized patch devices is increasing. Among them, the surface-mounted device (represented by LL-35 series) of the glass envelope is widely used due to its advantages of low cost and small volume.
However, the glass shell surface-mounted device has three problems, firstly, the glass shell surface-mounted device is an empty-sealed device, and the space is too small, so that the accurate leakage detection is inconvenient; secondly, most of the glass shell surface-mounted devices are in a compression joint structure, and open circuit failure occurs in the application process; thirdly, the matching between the structural materials is not good, and the interface of the materials generates large stress for a long time due to the difference of thermal expansion, so that the materials age too fast, and the chips have mesa breakdown to fail.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a pyrometallurgical bonding glass passivation entity encapsulation table pastes diode.
The utility model discloses a following technical scheme can realize.
The utility model provides a pyrometallurgical bonding glass passivation entity encapsulation table pastes diode, which comprises a chip, the welding of chip both ends has the molybdenum column through evaporating the aluminium lamination, and the molybdenum column all encapsulates in passivation glass with the chip, and the one end that the chip was kept away from to the molybdenum column is equipped with the electric coupling face that the diameter is greater than the molybdenum column, and the terminal surface of electric coupling face is the plane, and passivation glass is stretched out to the electric coupling face.
The electric coupling surface and the molybdenum column are integrally formed.
The cross section of the electric coupling surface is larger than that of the passivated glass.
The thickness of the aluminum evaporation layer is 6-16 mu m.
The chip is of a trapezoidal structure.
The chip is manufactured by adopting an N-type monocrystalline silicon wafer with a single-side lapping range from 200 to 350 mu m.
The beneficial effects of the utility model reside in that:
forming an N + region on the back of the N-type silicon wafer substrate by a primary phosphorus/boron diffusion method, wherein the N + region is used for forming good ohmic contact with an electrode lead, and forming a P region on the front of the N-type silicon wafer substrate to obtain a core PN junction of the diode; the chip and the molybdenum electrode lead are directly welded together through the aluminum evaporation layers on the two surfaces of the chip, and the glass powder is encapsulated, so that the electric connection is reliable, and the open circuit failure is not easy to occur; the thermal expansion coefficients of the molybdenum and the glass are 4-5, and are closer to those of the glass and the copper-clad steel lead, so that the matching degree of the structural material is improved, the stress of an interface between the molybdenum electrode and the passivated glass is reduced, the use reliability is improved, and the probability of open-circuit aging is reduced.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic structural diagram of the chip and the molybdenum column according to the present invention after assembly.
In the figure: 1-chip; 2-molybdenum column; 3-passivating the glass; 4-electrical coupling plane.
Detailed Description
The technical solution of the present invention is further described below, but the scope of the claimed invention is not limited to the described.
As shown in fig. 1, the structure of the present invention is schematically illustrated:
the utility model provides a pyrometallurgical bonding glass passivation entity encapsulation table pastes diode, including chip 1, 1 both ends of chip have molybdenum post 2 through evaporating the aluminium lamination welding, and molybdenum post 2 all encapsulates in passivation glass 3 with chip 1, and the one end that chip 1 was kept away from to molybdenum post 2 is equipped with electric coupling face 4 that the diameter is greater than molybdenum post 2, and electric coupling face 4's terminal surface is the plane, and electric coupling face 4 stretches out passivation glass 3.
Forming an N + region on the back of the N-type silicon wafer substrate by a primary phosphorus/boron diffusion method, wherein the N + region is used for forming good ohmic contact with an electrode lead, and forming a P region on the front of the N-type silicon wafer substrate to obtain a core PN junction of the diode; the chip 1 and the molybdenum electrode lead are directly welded together through the aluminum evaporation layers on the two sides of the chip 1, and the glass powder is encapsulated, so that the electric connection is reliable, and the open circuit failure is not easy to occur; the thermal expansion coefficients of the molybdenum and the glass are 4-5, and are closer to those of the glass and the copper-clad steel lead, so that the matching degree of the structural material is improved, the stress of an interface between the molybdenum electrode and the passivated glass 3 is reduced, the use reliability is improved, and the probability of open-circuit aging is reduced.
The electric coupling surface 4 is integrally formed with the molybdenum column 2. The material consistency is better, and the current passing rate is improved.
The cross section of the electric coupling surface 4 is larger than the passivated glass 3. When the electrode is used with an external device through the mounting of the electric coupling surfaces 4 on the two sides, the electric coupling performance between the electrode and an external power supply is improved, and therefore the working stability is improved.
The thickness of the aluminum evaporation layer is 6-16 mu m. The molybdenum column 2 and the chip 1 are good in connection integrity, large in current passing rate and stable in diode work.
The chip 1 is in a trapezoidal structure. The bonding degree between the chip 1 and the passivation glass 3 is improved, and the shock resistance is strong.
The chip 1 is manufactured by adopting an N-type monocrystalline silicon wafer with a single-side lapping range from 200 to 350 mu m.
The utility model also provides a manufacturing method of above-mentioned metallurgical bonding glass passivation entity encapsulation surface mounting diode of high temperature, including following step:
processing a chip 1, selecting an N-type monocrystalline silicon wafer with the resistivity of 0.003-500 omega-cm, grinding the wafer from a single side to 200-350 mu m, performing phosphorus-boron diffusion, and removing a borosilicate glass layer formed on a boron diffusion surface by using compressed air carrying carborundum to obtain a PN junction silicon wafer, wherein the depth of a phosphorus surface junction is 10-80 mu m, the square resistance is less than or equal to 3 omega/□, the depth of a boron surface junction is 10-80 mu m, and the square resistance is less than or equal to 5 omega/□;
step two, evaporating aluminum and cracking, namely evaporating aluminum with the thickness of 6-16 mu m on the reserved phosphorus diffusion surface, finely grinding the surface without evaporating aluminum, then keeping the surface at 450-500 ℃ for 5-20 min for alloy treatment, and then cracking;
step three, molybdenum electrode processing, namely cutting and processing a molybdenum sheet with the diameter of phi 0.8-phi 8mm to obtain a molybdenum column 2 and an electric coupling surface 4, wherein the diameter of the molybdenum column 2 is the same as that of the chip 1;
step four, assembling, namely assembling the molybdenum columns 2 at two ends of the chip 1 by using the evaporated aluminum in the step two as a solder layer, and then putting the chip into a sintering furnace for welding; (assembled as shown in figure 2.)
Step five, performing mesa corrosion, namely putting the mesa into a KOH solution with the concentration of 2-12%, performing mesa corrosion for 2-25 min at the temperature of 80-100 ℃, washing the mesa by hot deionized water after corrosion, performing boiling treatment, alternately and fully cleaning by cold and hot deionized water, putting the mesa into a mixed solution of hydrogen peroxide with the mass percentage of more than or equal to 30%, hydrogen peroxide with the mass percentage of more than or equal to 85% and ionized water according to the ratio of 1:1:1.3 after cleaning, and passivating for 1-10 min at the temperature of 55-60 ℃;
and sixthly, packaging the passivated glass 3, designing and processing a corresponding glass powder filling mold according to the external dimension requirement, placing the product in the glass powder filling mold to be filled with glass slurry, and then placing the product in a vitrification furnace to form a passivated glass 3 packaged body.
And the welding process in the fourth step is that under the condition that the vacuum degree is more than or equal to 3.4X10-3pa, the temperature is increased to 660-700 ℃ at the speed of 5-25 ℃/min, the temperature is kept for 2-5 min, and then the temperature is reduced to below 100 ℃ at the speed of less than or equal to 5 ℃/min, and the product is taken out.
The glass slurry in the sixth step is a mixture of 3g of glass powder and 1ml of water.
And the vitrification process in the sixth step is to heat up to 660 ℃ in 45-65 min at the speed of 5-25 ℃/min, keep for 2-15 min, and then cool down at the speed of less than or equal to 5 ℃/min.
Claims (6)
1. The utility model provides a high temperature metallurgy bonding glass passivation entity encapsulation table pastes diode which characterized in that: the chip comprises a chip (1), wherein molybdenum columns (2) are welded at two ends of the chip (1) through aluminum evaporation layers, the molybdenum columns (2) and the chip (1) are all packaged in passivated glass (3), one end, far away from the chip (1), of each molybdenum column (2) is provided with an electric coupling surface (4) with the diameter larger than that of each molybdenum column (2), the end face of each electric coupling surface (4) is a plane, and each electric coupling surface (4) extends out of the passivated glass (3).
2. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the electric coupling surface (4) and the molybdenum column (2) are integrally formed.
3. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the cross section of the electric coupling surface (4) is larger than that of the passivated glass (3).
4. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the thickness of the aluminum evaporation layer is 6-16 mu m.
5. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the chip (1) is of a trapezoidal structure.
6. The pyrometallurgical bonded glass passivated entity encapsulated surface mounted diode of claim 1, wherein: the chip (1) is manufactured by adopting an N-type monocrystalline silicon wafer with a single-side lapping range from 200 to 350 mu m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120884903.6U CN214477477U (en) | 2021-04-27 | 2021-04-27 | High-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120884903.6U CN214477477U (en) | 2021-04-27 | 2021-04-27 | High-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214477477U true CN214477477U (en) | 2021-10-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120884903.6U Active CN214477477U (en) | 2021-04-27 | 2021-04-27 | High-temperature metallurgy bonding glass passivation entity encapsulation surface-mounted diode |
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| Country | Link |
|---|---|
| CN (1) | CN214477477U (en) |
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2021
- 2021-04-27 CN CN202120884903.6U patent/CN214477477U/en active Active
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