CN105336768A - Packaging technology of highly-reliable surface mounting glass-packaged diode - Google Patents
Packaging technology of highly-reliable surface mounting glass-packaged diode Download PDFInfo
- Publication number
- CN105336768A CN105336768A CN201510668834.4A CN201510668834A CN105336768A CN 105336768 A CN105336768 A CN 105336768A CN 201510668834 A CN201510668834 A CN 201510668834A CN 105336768 A CN105336768 A CN 105336768A
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- CN
- China
- Prior art keywords
- chip
- exit
- packaging technology
- temperature
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012536 packaging technology Methods 0.000 title claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 52
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 6
- 238000005036 potential barrier Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 238000009853 pyrometallurgy Methods 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000009434 installation Methods 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000005476 soldering Methods 0.000 abstract 2
- 239000000047 product Substances 0.000 description 11
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
- H01L2224/8584—Sintering
Abstract
The invention discloses a packaging technology of a highly-reliable surface mounting glass-packaged diode. The diode comprises a glass housing, a chip arranged in the glass housing and lead-out ends sleeving two ends of the glass housing. A soldering sheet is arranged between each of the lead-out ends and the chip. The lead-out ends are bonded to the glass housing, the soldering sheets and the chip via the high-temperature metallurgical technology. The metallurgical bonding structure is advantaged by high reliability, resistance to big current impact and small thermal resistance, is wide in working temperature range (from -55 DEG C to 125 DEG C) and is anti-high temperature welding. Parameters will not be deteriorated after the metallurgical bonding structure is arranged at a temperature of 550 DEG C for 15 minutes. Thus, thermal matching in whole working temperature range of the product is achieved; nitrogen is used as protective gas during the whole process, so the diode can be safely produced without use of danger gas; the manufactured diode is small in installation size, high in assembly density and light; and operation is simple and batch production or large-scale production can be easily achieved.
Description
Technical field
The present invention relates to a kind of packaging technology of diode, specifically, be a kind of packaging technology of highly reliable surface mount glass sealed diode, belong to diode packaging technology field.
Background technology
A large amount of small area analysis Schottky diode used at present, its packing forms is axial lead glass packaging, installation volume is large, weight is large, lead impedance is large, cause that the volume of complete machine increases, reliability reduces, be not suitable for the high density of advanced weapons change system, high-performance, highly reliable requirement.Surface mount small area analysis Schottky diode is with metal silicide (as MoSi2) for positive pole, take N type semiconductor as negative pole, metal silicide-silicon contact semiconductor device that the potential barrier that both utilizations contact-making surface is formed is made.Device chip potential barrier is the Schottky barrier adopting metal silicide-silicon contact, improves the forward characteristic of device; Chip adopts guard ring and multi-layer metallized structure simultaneously, improves reverse withstand voltage reverse characteristic and the thermal fatigue resistance of device.Surface mount glass envelope small area analysis Schottky diode series has that forward voltage drop is low, Reverse recovery is fast, volume is little, lightweight, efficiency high, be used in the circuit such as Switching Power Supply, high-frequency rectification mainly as switch, rectifier diode, the performance of product directly has influence on the speed of service and the operating efficiency of main power source system, play vital effect for aspects such as improving the performance of complete machine and optimization system design, product can be widely used in the aspects such as computer, radar, communication transmitter, aerospace craft, instrument and meter.
At present, the chip of surface mount glass sealed diode and the connected mode of exit are for crimping, namely utilize external force (as the deformation pressure of shell fragment, the convergent force of glass high temperature deformation) realize the Mechanical Contact of unloading of chip and exit, this connected mode reliability is low, can not meet the requirement of long-term reliability.
Summary of the invention
For the defect of prior art, the invention provides a kind of packaging technology of highly reliable surface mount glass sealed diode, the diode reliability utilizing this packaging technology to make is high, and working temperature is wide, high temperature resistant welding, and heat coupling is good.
In order to solve the technical problem, the technical solution used in the present invention is: a kind of packaging technology of highly reliable surface mount glass sealed diode, the exit that described diode comprises glass bulb, is positioned at the chip of glass bulb, is set in glass bulb two ends, be provided with weld tabs between exit and chip, it is characterized in that: the exit of diode and glass bulb, exit and weld tabs, chip are bonded together by pyrometallurgical processes.
Further, the packaging technology of highly reliable surface mount glass sealed diode of the present invention comprises the following steps:
1), prepare chip, chip thickness is 210 μm ± 50 μm;
2), with mould, chip, weld tabs, exit and glass bulb are assembled together;
3), nitrogen sintering, open sintering furnace, arrange working temperature and nitrogen flow by process conditions, nitrogen flow is 1000ml/min ± 10ml/min, when fire door temperature is raised to 300 DEG C ± 20 DEG C, the mould that semi-finished product device is housed is put to fire door preheating at least 10min; After furnace temperature is raised to 620 DEG C ± 20 DEG C, mould is pushed flat-temperature zone, reaches predetermined constant temperature time and mould is pulled to fire door cooling 30min, finally take out mould and naturally cool to room temperature, complete encapsulation, realize the sealing of the good metallurgical bonding of exit, weld tabs and chip and glass bulb and exit.
Further, in above-mentioned thermostatic process, constant temperature time is 10-30min.
Further, described weld tabs is silver-bearing copper tin sheet, and the weight ratio of silver-bearing copper tin is 6:3:1.
Further, described chip is the chip of the electroplate of potential barrier ability more than 600 DEG C high temperature sinterings.
Further, the material of described exit is Dumet wire, and the outer surface of exit is copper, and the inside is iron-nickel alloy.
Beneficial effect of the present invention: packaging technology of the present invention utilize pyrometallurgical processes by the exit of diode with glass bulb, exit together with weld tabs, chip bonding, metallurgical bonding structure has high, the resistance to heavy current impact of reliability, advantage that thermal resistance is little, and operating temperature range wide (-55 DEG C ~ 125 DEG C), high temperature resistant welding (under 550 DEG C of environment 15 minutes, parameter does not worsen); Product selection achieves the heat coupling of the full operating temperature range of product; Adopt nitrogen to be protective gas in whole technical process, production safety, uses without hazardous gas; The diode installation volume made is little, and packaging density is high, lightweight; Technological operation is simple, easily realizes batch or large-scale production.
Accompanying drawing explanation
Fig. 1 is the structural representation of surface mount glass sealed diode of the present invention;
Structural representation when Fig. 2 is surface mount glass sealed diode of the present invention encapsulation;
Fig. 3 is the temperature profile in encapsulation process;
In figure: 1, glass bulb, 2, chip, 3, exit, 4, weld tabs.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described further and limit.
As shown in Figure 1, for the structural representation of the glass sealed diode of surface mount described in the present embodiment, comprise glass bulb 1, chip 2 in the middle of the glass bulb 1, be set in the exit 3 at glass bulb 1 two ends and the weld tabs 4 between exit 3 and chip 2, in the present embodiment, by pyrometallurgy bonding technology, glass bulb 1 and exit 3, glass bulb 1 are bonded together with weld tabs 4, chip 2.
In this enforcement, the packaging technology of described highly reliable surface mount glass sealed diode comprises the following steps:
1), prepare chip, chip thickness is 210 μm ± 50 μm;
2), with mould chip, weld tabs, exit and glass bulb are assembled together, as shown in Figure 2;
3), nitrogen sintering, open sintering furnace, arrange working temperature and nitrogen flow by process conditions, nitrogen flow is 1000ml/min ± 10ml/min, when fire door temperature is raised to 300 DEG C ± 20 DEG C, the mould that semi-finished product device is housed is put to fire door preheating at least 10min; After furnace temperature is raised to 620 DEG C ± 20 DEG C, mould is pushed flat-temperature zone, after constant temperature 20min, mould is pulled to fire door cooling 30min, finally take out mould and naturally cool to room temperature, complete encapsulation, realize the sealing of the good metallurgical bonding of exit, weld tabs and chip and glass bulb and exit.Temperature variation curve in sintering process as shown in Figure 3.
In the present embodiment, described weld tabs is silver-bearing copper tin sheet, and the weight ratio of silver-bearing copper tin is 6:3:1.The surface of described chip is silver, its potential barrier ability more than 600 DEG C high temperature sinterings.The material of described exit is Dumet wire, and the outer surface of exit is copper, and the inside is iron-nickel alloy.
Highly reliable surface mount glass sealed diode described in the present embodiment has resistance to heavy current impact, connects the advantages such as reliable, thermal resistance is little.During encapsulation, need to consider the factors such as Schottky chip withstand high temperatures ability, chip metallization, envelope material, terminal material, meet the requirements such as heat coupling, mechanical strength, current delivery.Therefore, require in order to the electrical quantity realizing product and be reliably connected, parameter characteristic and the architectural characteristic of product should be considered.
Glass bulb adopts GLASS8532 type glass bulb, and glass bulb softening point temperature is 560 DEG C, and glass bulb working point maximum temperature is 760 DEG C; Weld tabs adopts silver-bearing copper tin sheet, occurs liquid at about 600 DEG C, and all liquid to 720 DEG C, density is 9.57g/cc, therefore determines that high temperature bonding temperature is 620 DEG C ± 20 DEG C.The material of exit is Dumet wire, and the outer surface of exit is copper, and the inside is iron-nickel alloy.The surface of described chip is silver, its potential barrier ability more than 600 DEG C high temperature sinterings.
The primary raw material of composition diode is exit, glass bulb, chip, weld tabs (main component is Ag), the thermal coefficient of expansion of various material to be washed one's face and rinsed one's mouth table in the thermal expansion of table 1 raw material, the thickness x of product chips silicon layer and chip silver thickness and weld tabs thickness y is determined according to the coefficient of expansion of material, generally getting silicon layer thickness x is 0.21mm, chip silver thickness 0.01mm, according to formula (x+0.01+y) * 8.0 × 10
-6=x*4.2 × 10
-6+ (0.01+y) * 18.9 × 10
-6calculate weld tabs thickness y, realize heat coupling.
According to product structure characteristic, the main thermal matching considering glass bulb and Dumet wire exit.As can be seen from the above table, the similar thermal expansion coefficient of this bi-material, thermal matching is good.So we adopt the glass bulb with Dumet wire matched expansion coefficient, and sinter in nitrogen protection atmosphere, ensure product long-term reliability.
Did repeatedly about the test of heat coupling after product sinter molding, comprise anti-glass cracking test, thermal shock test (Liquid-liquid), every ambient mechanical such as 500 temperature shock tests test examination is qualified, thus proves that the high reliability of product meets GJB requirement.
More than just principle of the present invention is conducted further description and explained; better the present invention is understood to enable those skilled in the art; should be understood that; the effect that following content only plays explanation, illustrates; essentiality content of the present invention is not limited; all improvement within thinking of the present invention, all should within scope.
Claims (6)
1. the packaging technology of a highly reliable surface mount glass sealed diode, the exit that described diode comprises glass bulb, is positioned at the chip of glass bulb, is set in glass bulb two ends, be provided with weld tabs between exit and chip, it is characterized in that: the exit of diode and glass bulb, exit and weld tabs, chip are bonded together by pyrometallurgical processes.
2. the packaging technology of highly reliable surface mount glass sealed diode according to claim 1, is characterized in that: comprise the following steps:
1), prepare chip, chip thickness is 210 μm ± 50 μm;
2), with mould, chip, weld tabs, exit and glass bulb are assembled together;
3), nitrogen sintering, open sintering furnace, arrange working temperature and nitrogen flow by process conditions, nitrogen flow is 1000ml/min ± 10ml/min, when fire door temperature is raised to 300 DEG C ± 20 DEG C, the mould that semi-finished product device is housed is put to fire door preheating at least 10min; After furnace temperature is raised to 620 DEG C ± 20 DEG C, mould is pushed flat-temperature zone, reaches predetermined constant temperature time and mould is pulled to fire door cooling 30min, finally take out mould and naturally cool to room temperature, complete encapsulation, realize the sealing of the good metallurgical bonding of exit, weld tabs and chip and glass bulb and exit.
3. the packaging technology of highly reliable surface mount glass sealed diode according to claim 2, is characterized in that: described constant temperature time is 10-30min.
4. the packaging technology of the highly reliable surface mount glass sealed diode according to claim 1 or 3, is characterized in that: described weld tabs is silver-bearing copper tin sheet, and the weight ratio of silver-bearing copper tin is 6:3:1.
5. the packaging technology of highly reliable surface mount glass sealed diode according to claim 4, is characterized in that: described chip is the chip of the electroplate of potential barrier ability more than 600 DEG C high temperature sinterings.
6. the packaging technology of highly reliable surface mount glass sealed diode according to claim 5, is characterized in that: the material of described exit is Dumet wire, and the outer surface of exit is copper, and the inside is iron-nickel alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510668834.4A CN105336768B (en) | 2015-10-13 | 2015-10-13 | The packaging technology of highly reliable surface mount glass sealed diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510668834.4A CN105336768B (en) | 2015-10-13 | 2015-10-13 | The packaging technology of highly reliable surface mount glass sealed diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105336768A true CN105336768A (en) | 2016-02-17 |
| CN105336768B CN105336768B (en) | 2018-10-26 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510668834.4A Active CN105336768B (en) | 2015-10-13 | 2015-10-13 | The packaging technology of highly reliable surface mount glass sealed diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105336768B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845740A (en) * | 2016-06-14 | 2016-08-10 | 张路非 | Metallurgical bonding glass-sealed diode structure and production method thereof |
| CN107170728A (en) * | 2017-06-02 | 2017-09-15 | 朝阳无线电元件有限责任公司 | A kind of current regulator diode design and manufacturing technology |
| CN113192902A (en) * | 2021-04-27 | 2021-07-30 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050227416A1 (en) * | 2001-03-13 | 2005-10-13 | Hitachi, Ltd. | Electronic device and method of manufacture the same |
| CN101789403A (en) * | 2010-01-05 | 2010-07-28 | 苏州群鑫电子有限公司 | Chip surface contact glass packaging rectifier tube and manufacturing method thereof |
| CN102129986A (en) * | 2010-12-29 | 2011-07-20 | 朝阳无线电元件有限责任公司 | Method for manufacturing glass sealed diode by adopting metallurgy bonding method |
-
2015
- 2015-10-13 CN CN201510668834.4A patent/CN105336768B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050227416A1 (en) * | 2001-03-13 | 2005-10-13 | Hitachi, Ltd. | Electronic device and method of manufacture the same |
| CN101789403A (en) * | 2010-01-05 | 2010-07-28 | 苏州群鑫电子有限公司 | Chip surface contact glass packaging rectifier tube and manufacturing method thereof |
| CN102129986A (en) * | 2010-12-29 | 2011-07-20 | 朝阳无线电元件有限责任公司 | Method for manufacturing glass sealed diode by adopting metallurgy bonding method |
Non-Patent Citations (1)
| Title |
|---|
| 李东华: "高可靠表面贴装玻封小电流肖特基二极管制造技术研究", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845740A (en) * | 2016-06-14 | 2016-08-10 | 张路非 | Metallurgical bonding glass-sealed diode structure and production method thereof |
| CN107170728A (en) * | 2017-06-02 | 2017-09-15 | 朝阳无线电元件有限责任公司 | A kind of current regulator diode design and manufacturing technology |
| CN113192902A (en) * | 2021-04-27 | 2021-07-30 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN105336768B (en) | 2018-10-26 |
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Effective date of registration: 20240206 Address after: No. 13856 Jingshi West Road, Ping'an Street, Changqing District, Jinan City, Shandong Province, 250000 Patentee after: JINAN JINGHENG ELECTRONICS Co.,Ltd. Country or region after: China Address before: No. 51 Heping Road, Jinan City, Shandong Province, 250014 Patentee before: JINAN SEMICONDUCTOR Research Institute Country or region before: China |
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