CN110767609A - Sapphire insulator metal shell and production process thereof - Google Patents
Sapphire insulator metal shell and production process thereof Download PDFInfo
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- CN110767609A CN110767609A CN201911071221.7A CN201911071221A CN110767609A CN 110767609 A CN110767609 A CN 110767609A CN 201911071221 A CN201911071221 A CN 201911071221A CN 110767609 A CN110767609 A CN 110767609A
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- sapphire
- bottom plate
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 68
- 239000002184 metal Substances 0.000 title claims abstract description 68
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 58
- 239000010980 sapphire Substances 0.000 title claims abstract description 58
- 239000012212 insulator Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 56
- 238000003466 welding Methods 0.000 claims abstract description 31
- 238000007789 sealing Methods 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims description 45
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 16
- 238000005219 brazing Methods 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- 238000007689 inspection Methods 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 8
- 229910052593 corundum Inorganic materials 0.000 claims description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000011521 glass Substances 0.000 description 37
- 239000010410 layer Substances 0.000 description 32
- 239000012071 phase Substances 0.000 description 24
- 239000013078 crystal Substances 0.000 description 23
- 229910010293 ceramic material Inorganic materials 0.000 description 21
- 238000001465 metallisation Methods 0.000 description 20
- 229910000679 solder Inorganic materials 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 8
- 229910052573 porcelain Inorganic materials 0.000 description 8
- 239000007791 liquid phase Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 229910017309 Mo—Mn Inorganic materials 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- -1 titanium ions Chemical class 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910001430 chromium ion Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 229910000743 fusible alloy Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000007431 microscopic evaluation Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000011224 oxide ceramic Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4817—Conductive parts for containers, e.g. caps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Ceramic Products (AREA)
Abstract
The invention relates to the technical field of electronic components and discloses a sapphire insulator metal shell which comprises a frame body and a cover plate, wherein a bottom plate is fixedly arranged at the bottom of the frame body, a carrier positioned in the frame body is fixedly arranged at the top of the bottom plate, a ring frame is fixedly arranged at the top of the frame body, a connecting ring is fixedly arranged on the right side of the frame body, and a lead is fixedly arranged in the connecting ring. According to the sapphire insulator metal shell and the production process thereof, the purpose of improving the service performance of the semiconductor integrated circuit packaging shell in the prior art is achieved by the materials, the structures, the connection process and the like of the semiconductor integrated circuit packaging shell, and the problems that the connection performance between the packaging shell structures is general, the sealing and welding process is not complete, the selected insulating medium cannot bear ultrahigh voltage resistance and the service performance is reduced when the conventional semiconductor integrated circuit packaging shell is used are solved.
Description
Technical Field
The invention relates to the technical field of electronic components, in particular to a sapphire insulator metal shell and a production process thereof.
Background
With the continuous progress of thinning and miniaturization of electronic components, semiconductor integrated circuits require packages with better electrical performance, higher power density, higher reliability and lighter weight, which poses challenges for shells of important components for packaging, so that high-thermal-conductivity materials such as tungsten copper/molybdenum copper are more and more widely applied in the field of packaging, and materials such as ceramics/sapphire gradually replace glass, and plastics become a trend.
When the existing semiconductor integrated circuit packaging shell is used, the connection performance between the packaging shell structures is general, the sealing welding process is not complete enough, the selected insulating medium cannot bear ultrahigh voltage resistance, the use performance is reduced, and a larger improvement space exists, so that the sapphire insulator metal shell and the production process thereof are provided to solve the problems.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a sapphire insulator metal shell and a production process thereof, which have the advantages of improving the service performance of a semiconductor integrated circuit packaging shell and the like, and solve the problems that the connection performance between the packaging shell structures is general, the sealing and welding process is not complete, the selected insulating medium cannot bear ultrahigh voltage resistance, and the service performance is reduced when the conventional semiconductor integrated circuit packaging shell is used.
(II) technical scheme
In order to achieve the purpose of improving the use performance of the semiconductor integrated circuit packaging shell, the invention provides the following technical scheme: the utility model provides a sapphire insulator metal casing, includes framework and apron, the bottom fixed mounting of framework has the bottom plate, the top fixed mounting of bottom plate has the carrier that is located the framework inside, the top fixed mounting of framework has the ring frame, the right side fixed mounting of framework has the go-between, the inside fixed mounting of go-between has the lead wire.
Preferably, the frame body is made of zirconia ceramics, and a circular groove located on the left side of the frame body is formed in the bottom plate.
Preferably, the bottom plate is made of tungsten copper, the top of the bottom plate is provided with a groove, the bottom of the carrier is located in the groove, and the carrier is made of molybdenum copper.
Preferably, the area of the cover plate is larger than that of the ring frame, and the cover plate is made of expansion alloy.
Preferably, the ring frame is made of 4J50 alloy, the leads are made of 4J50(Cu), the connecting rings are made of sapphire, the number of the connecting rings is three, and the number of the leads is the same as that of the connecting rings.
A sapphire insulator metal shell and a production process thereof are characterized by comprising the following steps:
1) selecting materials; the frame body is made of zirconia ceramic, the mass fraction of the Al2O3 additive is 10%, the bottom plate is made of zirconia ceramic according to the applicable requirements, the bottom plate is made of 5.5-8.8(10-6/K) of expansion coefficient, the cover plate is made of 4J42, the ring frame is made of 4J50 alloy, the carrier is made of molybdenum copper with thermal expansion coefficient of 6.8-11.5(10-6/K), the thermal conductivity is 270W/(M.K), the lead is made of 4J50 copper-clad, and the connecting ring is made of sapphire.
2) The welding of the connecting ring can be divided into two methods, wherein the first method is brazing; the second method is diffusion welding and ceramic-metal sealing technology.
3) Checking; the method comprises the following steps of material insulation performance inspection, voltage resistance performance inspection, product strength inspection and appearance sealing inspection.
(III) advantageous effects
Compared with the prior art, the invention provides a sapphire insulator metal shell and a production process thereof, and the sapphire insulator metal shell has the following beneficial effects:
1. the sapphire insulator metal shell and the production process thereof are characterized in that a frame body is formed by brazing a bottom plate and a ring frame after being metalized by zirconia ceramic, wherein the bottom plate in a cavity is connected with an internal circuit in a welding mode through a carrier, the bottom heat dissipation of the circuit is realized, a zirconia ceramic side wall is connected with a lead wire in a brazing mode through a connecting ring after being metalized, the conduction of internal and external electric signals and the electric insulation between the lead wire-shell and the lead wire-lead wire are realized, finally, a cover plate is covered to form a closed cavity, the inner circuit is protected and supported, the connecting ring is sapphire commonly called corundum, the main component is Al2O3 which is a common simple coordination type oxide crystal, the sapphire in the nature presents different colors due to containing a plurality of impurity ions, for example, the sapphire containing titanium ions (Ti3+) and iron ions (Fe3+) presents blue, the crystal presents red when containing chromium ions (Cr3+) is used as a yellow when nickel ions (Ni 3) are contained, the crystal presents yellow, the pure alumina crystal is in a transparent crystal, the pure alumina crystal, the crystal is in a crystal, the case of a crystal, the crystal which is a transparent crystal, a crystal which is a crystal which has unique crystal, a crystal which has a special crystal, a high-optical crystal, a crystal which has a high-optical crystal, a crystal with a high-optical crystal with a high-thermal-resistant thermal expansion coefficient of a high-resistant ceramic material with a high-resistant thermal expansion coefficient of a high-resistant ceramic, a thermal expansion coefficient of a thermal expansion, a thermal expansion coefficient of a thermal expansion, a thermal expansion of a thermal expansion ceramic chip, a thermal expansion ceramic chip, a thermal expansion ceramic chip with a thermal expansion of a thermal expansion-thermal expansion resistant thermal expansion-resistant thermal expansion of a thermal expansion, a thermal expansion of a thermal expansion-resistant thermal expansion-ceramic chip, a thermal expansion-resistant thermal expansion-ceramic chip, a thermal expansion-ceramic chip, a thermal expansion-thermal expansion-thermal-ceramic-thermal-ceramic-thermal-.
2. The sapphire insulator metal shell and the production process thereof are characterized in that the welding comprises brazing and diffusion welding, the key of the brazing welding is to improve the wettability of the sapphire insulator metal shell and a brazing filler metal, the commonly adopted method is metallization, namely a metal film with high conductivity and firm combination, such as nickel and the like, is coated on the surface, so that the sapphire insulator metal shell is wetted by the brazing filler metal, and mainly comprises a chemical plating method, an electroplating method, a high-temperature sintering method, an active metal powder method, a vapor deposition method and the like, however, compared with 95% A1203 porcelain and 99.5% Al2O3 porcelain, the sapphire does not contain a glass phase and a vapor phase, does not have a grain boundary, and cannot effectively migrate during metallization, so that metallization is much more difficult, the traditional theory cannot effectively explain the mechanism of metallization, the diffusion welding of the sapphire does not need to use solders, electrodes, scaling powders and protective gases, and subsequent machining, the diffusion welding adopting the intermediate layer has the advantages of reducing the chemical heterogeneity of a continuous region, relieving the residual stress, eliminating the difference of linear expansion of welding materials, preventing plastic deformation, reducing the welding temperature, pressure and duration time, and adopting two methods of diffusion welding, namely adding no intermediate layer and adding no intermediate layer, wherein the former method has no thermal expansion of the intermediate layer and the parent metalThe problem of large residual stress generated in the cooling process due to excessive difference of expansion coefficients and high welding strength, and more technical researches are needed, the addition of the intermediate layer can provide transient liquid phase or partial transient liquid phase to promote wetting and diffusion of initial materials, can reduce temperature pressure and connection time, prevent plastic deformation, relieve residual stress and reduce non-uniformity of a bonding layer, the traditional intermediate layer system has the defects that a connection phase formed by the intermediate layer can not bear high temperature generally and limits the use of the traditional intermediate layer system, in recent years, the intermediate layer system containing several oxide ceramics is researched to improve the temperature resistance, in the ceramic-metal sealing technology, ceramic metallization is a key, a metallization layer is a compound of Mo particles and a glass phase, sintered Mo and the glass phase are mutually permeated, staggered and wrapped to form a network structure, and the ceramic metallization method comprises the following steps, the method comprises the following steps of metalizing sapphire by adopting an activated Mo-Mn method, carrying out microscopic analysis on a sapphire metalized layer, and continuously optimizing the process method on the basis of researching the activated Mo-Mn metalizing mechanism of the sapphire, wherein the metalizing mechanism is glass phase migration, when the temperature is high, firstly, an activator glass phase in the metalized layer migrates towards a sintering aid glass phase in ceramic, and then, the activator glass phase is activated for the latter, so that the latter migrates towards the metalized layer, the source of the glass phase comprises two aspects of the glass phase in the ceramic and the glass phase in the metalized layer, the two aspects are important and supplement each other, and the mechanism of an oxide solder method is as follows: one side of the high-temperature liquid phase is soaked in the ceramic surface, the other side is soaked in the micro-oxidized metal surface, the bonding of the ceramic and the metal is formed, and the active metal method comprises the following steps: the ceramic-metal sealing is completed in one heating process, some small tubes are completed in one step together with cathode decomposition, exhaust and tube sealing, the influence of ceramic components and performance is small, different kinds and different sources of ceramics can be sealed by the same process, but the method is not suitable for continuous production and is suitable for large-piece, single-piece or small-batch production, and the conditions are that active metal (such as titanium) exists, solder (such as silver-copper eutectic alloy) capable of forming low-melting alloy or dissolving active metal with the active metal exists, and inert atmosphere or vacuum (5 multiplied by 10) exists-3Pa), oxide solder method: welding with oxide solder (such as high alumina porcelain, transparent alumina porcelain, etc.)Melting into viscous liquid (glass) at temperature (more than 1500 ℃), reacting with the surface of metal and ceramic to generate bonding layer, cooling, separating out most of microcrystals (high sealing strength) to form firm intermediate layer, and solid phase process: the ceramic and metal surfaces are ground flat and clamped together in a solid state, and under certain external conditions (such as high pressure and high temperature or electrostatic attraction), the two planes are in close contact without liquid phase to achieve airtight sealing, including pressure sealing, solid diffusion sealing, electrostatic sealing and the like, and pressure diffusion sealing: the polishing surfaces of the medium and the metal are assembled together, and the temperature is raised in dry hydrogen or vacuum, if the polishing surfaces are glass, the temperature can only reach 200 ℃ below the softening point of the glass, and if the melting point of the medium is higher than that of the metal, the temperature is raised to 0.9 time of the melting point of the metal, so that the connection process between the metal shell structures of the sapphire insulator is improved, the stability between the connection structures is ensured, and the purpose of improving the service performance of the semiconductor integrated circuit packaging shell is achieved.
Drawings
FIG. 1 is a schematic view of a sapphire insulator metal housing and a production process thereof according to the present invention;
FIG. 2 is a top view of a sapphire insulator metal housing and a process for manufacturing the same according to the present invention;
fig. 3 is a schematic view of a sapphire insulator metal shell and a connecting ring structure of a production process thereof according to the present invention.
In the figure: 1 frame, 2 bottom plates, 3 cover plates, 4 ring frames, 5 carriers, 6 leads and 7 connecting rings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-3, a sapphire insulator metal casing includes a frame 1 and a cover plate 3, a bottom plate 2 is fixedly installed at the bottom of the frame 1, the frame 1 is made of zirconia ceramic, a circular groove located at the left side of the frame 1 is formed in the bottom plate 2, a carrier 5 located in the frame 1 is fixedly installed at the top of the bottom plate 2, the bottom plate 2 is made of tungsten copper, a groove is formed at the top of the bottom plate 2, the bottom of the carrier 5 is located in the groove, the carrier 5 is made of molybdenum copper, a ring frame 4 is fixedly installed at the top of the frame 1, the area of the cover plate 3 is larger than that of the ring frame 4, the cover plate 3 is made of an expanded alloy, a connecting ring 7 is fixedly installed at the right side of the frame 1, the ring frame 4 is made of 4J50 alloy, a lead 6 is made of 4J50(Cu), the connecting ring 7 is made of sapphire, the number of the connecting rings 7 is three, the inner part of the connecting ring 7 is fixedly provided with a lead 6.
A sapphire insulator metal shell and a production process thereof are characterized by comprising the following steps:
1) selecting materials; the frame body 1 is made of zirconia ceramic, the mass fraction of the Al2O3 additive is 10%, the bottom plate 2 is made of zirconia ceramic according to the applicable requirement, the bottom plate 2 is made of an alloy with an expansion coefficient of 5.5-8.8(10-6/K), the cover plate 3 is made of 4J42, the ring frame 4 is made of 4J50, the carrier 5 is made of molybdenum copper with a thermal expansion coefficient of 6.8-11.5(10-6/K), the thermal conductivity is 270W/(M.K), the lead 6 is made of 4J50 copper, and the connecting ring 7 is sapphire.
2) The welding of the connecting ring 7 can be divided into two methods, one method is brazing; the second method is diffusion welding and ceramic-metal sealing technology.
3) Checking; the method comprises the following steps of material insulation performance inspection, voltage resistance performance inspection, product strength inspection and appearance sealing inspection.
The thermal expansion coefficient of the ceramic material is improved by a thermal expansion coefficient of a ceramic material, the thermal expansion coefficient of a ceramic material is improved by a thermal expansion coefficient of a ceramic material, the ceramic material is improved by a thermal expansion coefficient of a ceramic material, the thermal expansion coefficient of a ceramic material is improved by a thermal expansion coefficient of a ceramic material, the thermal expansion coefficient of a ceramic material, the ceramic material is improved by a thermal expansion coefficient of a thermal expansion coefficient of a ceramic material, the thermal expansion of a thermal expansion coefficient of a thermal expansion of a ceramic material, the thermal expansion of a ceramic material, the thermal expansion coefficient of a ceramic material, the thermal expansion of a ceramic material, the thermal expansion coefficient of a thermal expansion of a ceramic material, the thermal expansion of a thermal expansion coefficient of a ceramic material, the thermal expansion of a ceramic material, a thermal expansion of a thermal.
High voltage tolerant design
The insulating property of the material is as follows:
the sapphire resistivity is about rho 1014 omega cm, and the empirical formula of insulation resistance checking is as follows:
r is insulation resistance (omega) between two end parts connected by the sapphire insulator;
rho-resistivity (Ω · cm) of the sapphire insulator material;
h-the height (cm) of the sapphire insulator;
r1, r 2-inner diameter and minimum outer diameter (cm) of the sapphire insulator;
the product can be obtained from the design drawing:
h＝2mm＝0.2cm；
r1＝0.76/2mm＝0.38mm＝0.038cm；
r2＝2/2mm＝1mm＝0.1cm；
the formula is substituted to calculate R ≈ 0.34 × 1014 Ω ═ 3.4 × 1013 Ω > >1 × 1010 Ω.
According to the calculation, the reliability of the designed insulation resistance of the product meets the requirement.
B. Voltage resistance:
calculating according to the withstand voltage reliability:
v is breakdown voltage (kV) between metal parts at two ends connected by the glass insulator;
rho-resistivity (Ω · cm) of the glass insulator material;
h-height (cm) of the glass insulator;
r1, r 2-inner diameter and minimum outer diameter (cm) of the glass insulator;
i-glass insulator leakage current (mA);
omega-alternating frequency (Hz);
epsilon-the dielectric coefficient of the glass insulator;
where ρ is 1014 Ω × cm, h is 2.0mm, r1 is 0.38mm, r2 is 1mm, I is 50nA (specified by GJB), and ∈ (11.5);
the formula is substituted to calculate that V is 1.67 multiplied by 106V which is 1670KV > >8000V, the air resistivity rho near the earth surface is 3 multiplied by 1011 omega multiplied by cm, the equivalent creepage distance is considered, the sapphire resistivity is far higher than the air resistivity, therefore, under the high pressure condition, the air breaks down preferentially, the air data is substituted into the formula to calculate that V is 0.56 multiplied by 104V which is 5600V <8000V, therefore, the current structure can not meet the voltage-resistant requirement, the structure needs to be improved, the creepage distance is increased by increasing the concave-convex part, and the voltage-resistant is improved
After improvement, the creepage distance is increased by 1 time, and the obtained withstand voltage V is 1.12 multiplied by 104V which is 11200V >8000V, so that the design requirement is met.
The composite lead 6 axial resistivity is as follows:where ρ c and ρ s represent the resistivity of the core and sheath materials, respectively, and θ is (D/D))2, D and D denote the diameter of the inner core and the entire composite lead 6, respectively. For dc, the higher the area occupied by the low resistance inner core, the lower the total resistivity of the composite lead 6 will be. Therefore, under the condition that the length of the lead 6 is fixed, the area of the oxygen-free copper of the low-resistance inner core is increased, and the resistivity can be effectively reduced.
The lead 6 of the project is 0.76mm in diameter, 16mm in length, Kovar 4J50 with resistivity of 0.44 multiplied by 10-6 omega mm2/m and oxygen-free copper of 0.017 multiplied by 10-6 omega mm2/m, and according to a resistance calculation formula:
R＝ρL/Wt
where ρ is the resistivity of the material, L is the length of the material, W is the width of the material, and t is the thickness of the material
The calculated resistance R of the lead 6 of the 4J50 at normal temperature is 15.5 multiplied by 10-6m omega <4m omega, and the design requirement is met, because the resistivity of the oxygen-free copper is far less than 4J50, the resistance of the lead 6 is better than 4J50, and a better conductive effect is obtained.
DC withstand voltage: 8000Vdc
Air leakage rate: < 1X 10-9Pa.m3/s
Coating thickness: the nickel plating layer is more than 2.0 μm, and the gold plating layer is more than 1.3 μm
Insulation resistance: > 1X 1010 omega
Thermal shock: 15 times at-65 to +150 DEG C
Temperature cycle: circulating at-65 deg.C to +175 deg.C for 100 times
Circulating for 10 times at-65 deg.C to +300 deg.C
Moisture resistance: 264h, 10 cycles
Resistance of lead 6: less than 4m omega
Mechanical impact: 1500g
Constant acceleration: 20000g
Working temperature storage temperature: at 250 ℃ to obtain a mixture.
When the device is used, the frame body 1 is metalized by zirconia ceramics and then is brazed with the bottom plate 2 and the ring frame 4 for forming, wherein the bottom plate 2 in the cavity is in welded connection with an internal circuit through the carrier 5 to realize the heat dissipation of the bottom of the circuit, the zirconia ceramic side wall is brazed with the lead 6 through the metalized connecting ring 7 to realize the conduction of internal and external electric signals and the electric insulation between the lead 6-shell and the lead 6-lead 6, and finally the cover plate 3 is sealed to form a closed cavity.
In summary, the sapphire insulator metal housing and the production process thereof, the housing 1 is brazed to the base plate 2 and the ring frame 4 after being metalized with zirconia ceramic, wherein the base plate 2 in the cavity is soldered to an internal circuit through a carrier 5 to achieve heat dissipation at the bottom of the circuit, the zirconia ceramic sidewall is soldered to a lead 6 through a connecting ring 7 after being metalized, thereby achieving conduction of internal and external electrical signals and electrical insulation between the lead 6-housing and the lead 6-lead 6, finally the cover plate 3 is capped to form a closed cavity, which has a protective and supporting effect on the internal circuit, the connecting ring 7 is commonly called sapphire, the main component is Al2O3, which is a common simple coordination type oxide crystal, which exhibits different colors due to the inclusion of some impurity ions, such as sapphire containing titanium ions (Ti3+) and iron ions (Fe3+) which exhibits blue color, which exhibits red color when containing chromium ions (Ni ions (3 +) which is a red color when containing nickel ions (Ni ions) and which exhibit yellow color), and is a sapphire ions (Fe3+) which exhibits different colors when it exhibits a high thermal conductivity, which is a high thermal conductivity due to a common thermal conductivity due to the inclusion of a high thermal conductivity of a ceramic, which is a high thermal conductivity of a ceramic material, which is a ceramic material which is a thermal conductivity of a ceramic such as a thermal insulator, which is not only a thermal conductivity of a thermal insulator such as a thermal insulator, a thermal.
Moreover, the welding includes brazing and diffusion welding, the key point of the brazing welding is to improve the wettability of the brazing filler metal, the commonly adopted method is metallization, namely, a metal film with high conductivity and firm combination, such as nickel and the like, is coated on the surface of the brazing filler metal, so that the brazing filler metal is wetted, and the method mainly comprises an electroless plating method, an electroplating method and a high-temperature chemical plating methodSintering method, active metal powder method and gas phase deposition method, however, compared with 95% A1203 porcelain and 99.5% Al2O3 porcelain, sapphire does not contain glass phase and gas phase, no crystal boundary exists, glass phase can not effectively migrate during metallization, so metallization is much more difficult, traditional theory can not effectively explain metallization mechanism, sapphire diffusion welding does not need to use solder, electrode, scaling powder and protective gas, and subsequent machining, diffusion welding with intermediate layer has the advantages of reducing chemical heterogeneity of continuous area, relieving residual stress, eliminating difference of welding material linear expansion, preventing plastic deformation, reducing welding temperature, pressure and duration, diffusion welding, and adding no intermediate layer and adding intermediate layer, the former has the advantages that the problem of large residual stress generated in cooling process due to too large difference of thermal expansion coefficient between intermediate layer and base metal does not exist, in recent years, the research on the interlayer system containing several oxide ceramics is carried out to improve the temperature resistance, in the ceramic-metal sealing technology, the ceramic metallization is a key, the metallization layer is essentially a compound of Mo particles and a glass phase, the sintered Mo and the glass phase are mutually permeated, staggered and wrapped to form a network structure, and the ceramic metallization method comprises the steps of metallizing sapphire by adopting an activated Mo-Mn method and carrying out microscopic analysis on the sapphire metallization layer, the method is continuously optimized on the basis of researching the activating Mo-Mn metallization mechanism of sapphire, wherein the metallization mechanism is glass phase migration, when the temperature is high, firstly, activating agent glass in a metallization layer migrates to the sintering aid glass phase in ceramic, and the activating agent glass is used for activating the sintering aid glass phase, so that the sintering aid glass phase reversely migrates to the metallization layer, the source of the glass phase comprises two aspects of the glass phase in the ceramic and the glass phase in the metallization layer, the two aspects are important and complementary, and oxidation is performedThe mechanism of the physical solder method is as follows: one side of the high-temperature liquid phase is soaked in the ceramic surface, the other side is soaked in the micro-oxidized metal surface, the bonding of the ceramic and the metal is formed, and the active metal method comprises the following steps: the ceramic-metal sealing is completed in one heating process, some small tubes are completed in one step together with cathode decomposition, exhaust and tube sealing, the influence of ceramic components and performance is small, different kinds and different sources of ceramics can be sealed by the same process, but the method is not suitable for continuous production and is suitable for large-piece, single-piece or small-batch production, and the conditions are that active metal (such as titanium) exists, solder (such as silver-copper eutectic alloy) capable of forming low-melting alloy or dissolving active metal with the active metal exists, and inert atmosphere or vacuum (5 multiplied by 10) exists-3Pa), oxide solder method: oxide solder (such as high alumina porcelain, transparent alumina porcelain and the like) is melted into viscous liquid (glass) at the welding temperature (more than 1500 ℃), the viscous liquid and the glass react with the surfaces of metal and ceramics to generate a bonding layer, most of the bonding layer is separated out after cooling to form various microcrystals (the sealing strength is very high), the bonding layer becomes a firm middle layer, and the solid phase process comprises the following steps: the ceramic and metal surfaces are ground flat and clamped together in a solid state, and under certain external conditions (such as high pressure and high temperature or electrostatic attraction), the two planes are in close contact without liquid phase to achieve airtight sealing, including pressure sealing, solid diffusion sealing, electrostatic sealing and the like, and pressure diffusion sealing: the polishing surfaces of the medium and the metal are assembled together, the temperature is raised in dry hydrogen or vacuum, if the polishing surfaces are glass, the temperature can only reach 200 ℃ below the softening point of the glass, if the melting point of the medium is higher than that of the metal, the temperature is raised to 0.9 time of the melting point of the metal, so that the connection process between the metal shell structures of the sapphire insulator is improved, the stability between the connection structures is ensured, the purpose of improving the service performance of the semiconductor integrated circuit packaging shell is achieved, and the problems that when the semiconductor integrated circuit packaging shell is used at present, the connection performance between the packaging shell structures is general, the sealing and welding process is not complete, the selected insulating medium cannot bear ultrahigh voltage resistance, and the service performance is reduced are solved.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a sapphire insulator metal casing, includes framework (1) and apron (3), its characterized in that: the bottom fixed mounting of framework (1) has bottom plate (2), the top fixed mounting of bottom plate (2) has carrier (5) that are located framework (1) inside, the top fixed mounting of framework (1) has ring frame (4), the right side fixed mounting of framework (1) has go-between (7), the inside fixed mounting of go-between (7) has lead wire (6).
2. The sapphire insulator metal can of claim 1, wherein: the frame body (1) is made of zirconia ceramics, and a circular groove located on the left side of the frame body (1) is formed in the bottom plate (2).
3. The sapphire insulator metal can of claim 1, wherein: the bottom plate (2) is made of tungsten copper, the top of the bottom plate (2) is provided with a groove, the bottom of the carrier (5) is located in the groove, and the carrier (5) is made of molybdenum copper.
4. The sapphire insulator metal can of claim 1, wherein: the area of the cover plate (3) is larger than that of the ring frame (4), and the cover plate (3) is made of expansion alloy.
5. The sapphire insulator metal can of claim 1, wherein: the ring frame (4) is made of 4J50 alloy, the leads (6) are made of 4J50(Cu), the connecting rings (7) are made of sapphire, the number of the connecting rings (7) is three, and the number of the leads (6) is the same as that of the connecting rings (7).
6. A sapphire insulator metal shell and a production process thereof are characterized by comprising the following steps:
1) selecting materials; the frame body (1) is made of zirconia ceramic with the mass fraction of 10% of Al2O3 additive, the bottom plate (2) is made of zirconia ceramic with the expansion coefficient of 5.5-8.8(10-6/K), the cover plate (3) is made of 4J42, the ring frame (4) is made of 4J50 alloy, the carrier (5) is made of molybdenum copper with the thermal expansion coefficient of 6.8-11.5(10-6/K), the thermal conductivity of 160 plus 270W/(M.K), the lead (6) is made of 4J50 copper-clad, and the connecting ring (7) is made of sapphire.
2) Welding; the welding of the connecting ring (7) can be divided into two methods, wherein the first method is brazing; the second method is diffusion welding and ceramic-metal sealing technology.
3) Checking; the method comprises the following steps of material insulation performance inspection, voltage resistance performance inspection, product strength inspection and appearance sealing inspection.
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