CN105845740A - Metallurgical bonding glass-sealed diode structure and production method thereof - Google Patents
Metallurgical bonding glass-sealed diode structure and production method thereof Download PDFInfo
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- CN105845740A CN105845740A CN201610417019.5A CN201610417019A CN105845740A CN 105845740 A CN105845740 A CN 105845740A CN 201610417019 A CN201610417019 A CN 201610417019A CN 105845740 A CN105845740 A CN 105845740A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 47
- 238000005245 sintering Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000003466 welding Methods 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 5
- GVVPGTZRZFNKDS-JXMROGBWSA-N geranyl diphosphate Chemical compound CC(C)=CCC\C(C)=C\CO[P@](O)(=O)OP(O)(O)=O GVVPGTZRZFNKDS-JXMROGBWSA-N 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims 1
- 238000001465 metallisation Methods 0.000 abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 230000001052 transient effect Effects 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 description 34
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 8
- 238000005476 soldering Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000013056 hazardous product Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- ONVGIJBNBDUBCM-UHFFFAOYSA-N silver;silver Chemical compound [Ag].[Ag+] ONVGIJBNBDUBCM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses a metallurgical bonding glass-sealed diode structure and a production method thereof. The metallurgical bonding glass-sealed diode structure comprises an electrode A, an electrode B, a chip and a glass tube, wherein the electrode A, the electrode B and the chip are arranged in the glass tube; electrical connection is achieved through diffusion welding between the chip and the electrode A and the electrode B; transition layer materials for diffusion welding are an upper surface metallization layer and a lower surface metallization layer of the chip respectively; and diffusion welding between the chip and the electrode A and the electrode B and sealing of the glass tube are synchronously finished to form a whole. The method comprises component assembling and sintering steps. The metallurgical bonding is achieved between the electrodes and the chip in a high-temperature process; the metallurgical bonding glass-sealed diode structure has the advantages of good heat dissipation performance, high current impact resistance and the like; the working range can be -55 DEG C to 175 DEG C; and the shortages that a metallurgical bonding glass-sealed diode product produced by the prior art is low in positive surge current resistance, reverse transient power resistance and the like are overcome.
Description
Technical field
The invention belongs to semiconductor element processing technique field, be specifically related to a kind of metallurgical bonding glass sealed diode structure
And production method.
Background technology
Glass sealed diode has the advantages that simple in construction, volume are little, lightweight, with low cost, at household electrical appliance, automobile electricity
Each fields such as son, Aero-Space all have and use widely, but the metallurgical bonding glass sealed diode that prior art produces is usually
The structure of Dumet wire electrode-silver-bearing copper soldering sheet-chip-silver-bearing copper soldering sheet-Dumet wire electrode, due to Dumet wire, silver-bearing copper soldering sheet
And the parts such as chip have on thermal coefficient of expansion and add bigger difference, cause the glass inside front cover of the metallurgical bonding that prior art produces
Pole pipe exists that operating temperature range is narrower, the ability of proper alignment temperature surge forward current relatively low, anti-and reverse surge power relatively
The deficiencies such as heat power consumption that is weak and that can bear is relatively low.Limit its rectification of larger current and Schottky barrier diodes,
Application on the TVS product of 500W and above power and the voltage adjustment diode of more than 1.5W thermal power.
Summary of the invention
The invention provides a kind of metallurgical bonding glass sealed diode structure and production method, metallurgical bonding glass envelope can be expanded
The rectification of diode larger current and the TVS product of Schottky barrier diodes, 500W and above power and more than 1.5W heat
Application on the voltage adjustment diode of power.
The present invention is achieved by the following technical programs.
A kind of metallurgical bonding glass sealed diode structure, including electrode A, electrode B, chip and glass-tube, described electrode A, electrode B
May be contained within glass-tube with chip, realize electrical connection by Diffusion Welding between described chip and electrode A and electrode B, and expand
The buffer layer material dissipating weldering is respectively upper surface metal layer and the lower surface metal layer of chip, chip and electrode A and electrode
Diffusion Welding and the sealing-in of glass-tube between B synchronously complete one entirety of formation.
The material of described electrode A and electrode B is tungsten.
Described glass-tube uses Glass8652 glass-tube, and the softening point temperature of Glass8652 glass-tube is 638 DEG C.
Described chip is GPP chip, and the material of its upper surface metal layer and lower surface metal layer is silver.
Described diode uses sinter molding, and the temperature of sinter molding is 720 DEG C ± 20 DEG C.
A kind of method producing above-mentioned metallurgical bonding glass sealed diode, its concrete grammar step is as follows:
(1) components and parts assemble: glass-tube, electrode A and chip are loaded in lower mold, and load electrode B in upper mold, then by upper
Mould tips upside down in lower mold so that components and parts assemble formation diode in mould, then applies weight in the upper end of electrode B and is
The briquetting of 2g-15g；
(2) sintering: being sintered by the diode assembled in step (1), its sintering method is hot wall type vacuum-sintering
Or cold wall type vacuum-sintering.
Described hot wall type vacuum sintering method step is as follows:
A, mould equipped with diode in step (1) is pushed in vacuum sintering furnace boiler tube；
B, boiler tube in step A is evacuated；
C, when in step B boiler tube internal vacuum less than 1 × 10-4Heating is opened during Pa, and by temperature in boiler tube at 10min
～in 30min, it is warming up to 720 DEG C ± 20 DEG C；
D, by thermostatic 10min～30min in boiler tube in step C；
E, in 10min～30min, diode is down to room temperature；
Diode is taken out from sintering furnace boiler tube by F, unlatching vent valve, i.e. can get finished product glass sealed diode.
Described cold wall type vacuum sintering method step is as follows:
A, will be equipped with in the burner hearth that vacuum sintering furnace put into by the mould of diode, and bell is covered；
B, after vacuum-sintering stove evacuation 10s～30s, in sintering furnace, it is filled with nitrogen；
C, after being filled with nitrogen in sintering furnace, it is evacuated to burner hearth internal vacuum again less than 1 × 10 until step B-4Pa, and
It is energized to graphite jig, makes mold temperature be warming up to 720 ± 20 DEG C in 10min～30min；
D, by 720 DEG C ± 20 DEG C constant temperature 10min～30min of mold temperature in step C；
Mould thermostatic 10min～30min in E, step D, is filled with nitrogen, inside burner hearth in 10min～30min
Mould is down to room temperature；
Product is taken out by F, unlatching bell, i.e. can get finished product glass sealed diode.
The beneficial effects of the present invention is:
1, compared with prior art, the present invention use with silicon materials thermal coefficient of expansion closest to tungsten as electrode material
Material, eliminates and has to use for silver-bearing copper tin solder layer in prior art, not only simplify metallurgical bonding glass sealed diode product
Structure, improves production efficiency, reduces the consumption of precious metals silver simultaneously, the most effectively improves between product each several part
Thermal matching, by the operating temperature range of product by existing-55 DEG C to 150 DEG C, risen to-55 DEG C to 175 DEG C, improve
Product environmental suitability in high temperature environments.
2, compared with prior art, the softening temperature of the glass-tube that the present invention uses is brought up to by the 550 of prior art DEG C
638 DEG C, widen the product compatibility in use to welding process, 638 DEG C can have been met, resistance to soldering heat requirement in 1 minute.
3, the metallurgical bonding glass sealed diode product of prior art production is overcome due to thermal expansion between internal each parts
There is the former of larger difference and thus result in the shortcoming that anti-surge forward current ability is weak, by anti-for product surge forward current energy in coefficient
Power, by present less than 30A, is effectively promoted to more than 100A, has expanded whole at more than 1A of metallurgical bonding glass sealed diode product
Application on stream and Schottky barrier diodes.
4, the metallurgical bonding glass sealed diode product of prior art production is overcome due to thermal expansion between internal each parts
There is larger difference former and thus result in anti-reflective to the more weak shortcoming of surge power ability, by product anti-reflective to surge power in coefficient
Ability by present less than 400W, be effectively promoted to more than 1500W, expanded metallurgical bonding glass sealed diode product at 500W
The application on the TVS product of various power between 1500W.
5, the metallurgical bonding glass sealed diode interiors of products parts overcoming prior art production are more, and heat conductivity is poor
Shortcoming, can transmit the heat produced during product work to two ends in time, make the heat power consumption that product can bear by existing skill
The 1.5W of art once rises to more than 5W, meets the production need of the voltage adjustment diode of the 5W such as 1N5378 and following heat power consumption
Want.
6, whole production process does not uses or uses the purified gases such as minimal amount of nitrogen, does not produce any poisonous and hazardous
Material, not only reduces the logistics support pressure of production process, and the most whole process environmental protection is pollution-free.
Accompanying drawing explanation
Fig. 1 is the glass sealed diode exploded perspective view of two-way straight cutting structure in the present invention；
Fig. 2 is the glass sealed diode exploded perspective view of U-shaped surface mounting structure in the present invention；
Fig. 3 is the mould structure schematic diagram that the present invention produces that the glass sealed diode of two-way straight cutting structure is used；
Fig. 4 is the mould structure schematic diagram that the present invention produces that the glass sealed diode of U-shaped surface mounting structure is used；
When Fig. 5 is the glass sealed diode producing two-way straight cutting structure in the present invention, diode to be processed loads the structure of mould
Schematic diagram.
Fig. 6 is diode to be processed loading mould when being the glass sealed diode producing U-shaped surface mounting structure in the present invention
Structural representation.
In figure: 1-electrode A, 2-electrode B, 3-chip, 4-glass-tube, 5-lower mold, 6-upper mold, 51-lower mold die cavity, 61-upper mold
Die cavity, 7-electrode C, 8-electrode D, 31-upper surface metal layer, 32-lower surface metal layer.
Detailed description of the invention
Further describe technical scheme below in conjunction with the accompanying drawings, but claimed scope is not limited to institute
State.
As shown in Figure 1 and Figure 2, a kind of metallurgical bonding metallurgical bonding glass sealed diode structure, including electrode A 1, electrode B 2, core
Sheet 3 and glass-tube 4, described electrode A 1, electrode B 2 and chip 3 may be contained within glass-tube 4, and the top and bottom of described chip 3 are respectively
Being provided with upper surface metal layer 31 and lower surface metal layer 32, described upper surface metal layer 31 is connected with electrode B 2, under
Side metallization 32 is connected with electrode A 1, is realized electrically by Diffusion Welding between described chip 3 and electrode A 1 and electrode B 2
Connect, and the buffer layer material of Diffusion Welding is respectively upper surface metal layer 31 and lower surface metal layer 32；Described electrode
The material of A1 and electrode B 2 is tungsten；The material of described upper surface metal layer 31 and lower surface metal layer 32 is silver.This
It is whole that the sealing-in of chip 3 described in invention and the Diffusion Welding between electrode A 1 and electrode B 2 and glass-tube 4 synchronously completes formation one
Body, i.e. when welding processing, Diffusion Welding between chip 3 with electrode 1A and electrode B 2 and the sealing-in of glass-tube 4 be together with complete
's.The technical program use with silicon materials thermal coefficient of expansion closest to tungsten as electrode material, eliminate in prior art
Have to use for silver-bearing copper tin solder layer, not only simplify the structure of metallurgical bonding glass sealed diode product, reduce precious metal
Silver consumption, the most effectively improve the thermal matching between product each several part, by the operating temperature range of product by existing-
55 DEG C to 150 DEG C, rise to-55 DEG C to 175 DEG C, improve product environmental suitability in high temperature environments；Product is resisted
Surge forward current ability, by present less than 30A, is effectively promoted to more than 100A, has expanded metallurgical bonding glass sealed diode and has produced
Product application in the rectification and Schottky barrier diodes of more than 1A；By product anti-reflective to the ability of surge power by the most not
More than 400W, effectively it is promoted to more than 1500W, expands metallurgical bonding glass sealed diode product each between 500W to 1500W
Plant the application on the TVS product of power；Overcome the metallurgical bonding glass sealed diode interiors of products parts of prior art production relatively
Many, that heat conductivity is poor shortcomings, the heat power consumption making product can bear once is risen to more than 5W by the 1.5W of prior art.
Glass sealed diode of the present invention is two-way straight cutting structure or U-shaped surface mounting structure, and Fig. 1 is two-way straight cutting knot
Structure, its electrode A 1 is direct insertion structure with electrode B 2；Fig. 2 is U-shaped surface mounting structure, and its electrode C7 and electrode D8 is T-shaped knot
Structure, electrode C7, electrode D8 form U-shaped surface mounting structure with after chip 3 welding fabrication respectively.
Described chip 3 is GPP chip, and the material of its upper surface metal layer and lower surface metal layer is silver.
Realize electrical connection by diffusion welding (DW) between described electrode A 1, electrode B 2 and chip 3, be a kind of metallurgical bonding knot
Structure, the buffer layer material of Diffusion Welding is the metallization layer material on the upper and lower surface of chip 3, is silver.
The thermal coefficient of expansion contrast of silicon, tungsten, Dumet wire and silver-bearing copper soldering sheet (Ag60Cu30Sn10) related in the present invention
As shown in table 1 below:
Table 1: electrode material thermal coefficient of expansion contrasts
A kind of metallurgical bonding produces the method for above-mentioned glass sealed diode, and its concrete grammar step is as follows:
(1) components and parts assemble: glass-tube 4, electrode A 1 and chip 3 are loaded in lower mold, and load electrode B 2 in upper mold, then
Upper mold is tipped upside down in lower mold so that components and parts assemble formation diode in mould, then apply weight in electrode B 2 upper end
Briquetting for 2g-15g；As shown in Figures 3 to 6, the mould employed in the technical program includes lower mold 5 and upper mold 6, described under
Being provided with lower mold die cavity 51 on mould 5, be provided with model cavity 61 in upper mold 6, wherein lower mold die cavity 51 is coaxial with upper model cavity 61,
And the external diameter of the size of lower mold die cavity 51 and glass-tube 4 matches, the upper size of model cavity 61 matches with the size of electrode；For just
In plug-in mounting electrode, described lower mold die cavity 51 and upper model cavity 61 are all in communication with the outside.As it is shown on figure 3, be used for producing direct insertion glass
The diameter of the upper model cavity 61 of the mould of sealed diode is less than the diameter of lower mold die cavity 51；As shown in Figure 4, it is used for producing U-shaped table
The diameter of the upper model cavity 61 of the mould of face mounting structure diode and the equal diameters of lower mold die cavity 51.
As it is shown in figure 5, when assembling the diode of two-way straight cutting structure, glass-tube 4 is placed in lower mold die cavity 51, two ends
Electrode A 1, electrode A 2 and chip 3 may be contained within glass-tube 4, tip upside down in lower mold 5 by upper mold 6 the most again, finally will assemble two-way
The mould of straight cutting structure diodes is put into sintering furnace and is sintered.As shown in Figure 6, in two poles of U-shaped surface mounting structure
Guan Shi, is placed in glass-tube 4 in lower mold die cavity 51, and two end electrodes C7, electrode D8 and chip 3 may be contained within glass-tube 4, will the most again
Upper mold 6 tips upside down in lower mold 5, finally the mould assembling two-way straight cutting structure diodes is put into sintering furnace and is sintered.
(2) sintering: being sintered by the diode assembled in step (1), its sintering method is hot wall type vacuum-sintering
Or cold wall type vacuum-sintering.
Described hot wall type vacuum sintering method step is as follows:
A, mould equipped with diode in step (1) is pushed in vacuum sintering furnace boiler tube；
B, boiler tube in step A is evacuated；
C, when in step B boiler tube internal vacuum less than 1 × 10-4Heating is opened during Pa, and by temperature in boiler tube at 10min
～in 30min, it is warming up to 720 DEG C ± 20 DEG C；
D, by thermostatic 10min～30min in boiler tube in step C；
E, in 10min～30min, diode is down to room temperature；
Diode is taken out from sintering furnace boiler tube by F, unlatching vent valve, i.e. can get finished product glass sealed diode.
Described hot wall type vacuum-sintering uses hot wall type vacuum sintering furnace to produce.
Described cold wall type vacuum sintering method step is as follows:
A, will be equipped with in the burner hearth that vacuum sintering furnace put into by the mould of diode, and bell is covered；
B, after vacuum-sintering stove evacuation 10s～30s, in sintering furnace, it is filled with nitrogen；
C, after being filled with nitrogen in sintering furnace, it is evacuated to burner hearth internal vacuum again less than 1 × 10 until step B-4Pa, and
It is energized to graphite jig, makes mold temperature be warming up to 720 DEG C ± 20 DEG C in 10min～30min；
D, by 720 ± 20 DEG C of constant temperature 10min～30min of mold temperature in step C；
Mould thermostatic 10min～30min in E, step D, is filled with nitrogen, at 10min～30min inside burner hearth
Interior mould is down to room temperature；
Product is taken out by F, unlatching bell, i.e. can get finished product glass sealed diode.
Described cold wall type vacuum sintering method uses cold wall type vacuum sintering furnace to produce.
Heretofore described glass-tube 4 uses Glass8652 glass-tube, glass-tube softening point temperature to be 638 DEG C, glass-tube high workload
Temperature is 900 DEG C；Chip upper and lower surface metalation layer material is silver；Silver point is 960 DEG C, and the Diffusion Welding temperature of silver is
480 DEG C～768 DEG C.It is thus determined that the temperature of product sinter molding is 720 DEG C ± 20 DEG C.Use the technical program so that glass-tube 4
Softening temperature brought up to 638 DEG C by the 550 of prior art DEG C, widened the product compatibility in use to welding process
Property, 638 DEG C can be met, resistance to soldering heat requirement in 1 minute；Whole production process does not uses or uses the purification such as minimal amount of nitrogen
Gas, does not produce any poisonous and hazardous material, not only reduces the logistics support pressure of production process, and the most whole process is green
Color is environment friendly and pollution-free.
Claims (8)
1. a metallurgical bonding glass sealed diode structure, it is characterised in that: include electrode A (1), electrode B (2), chip (3) and glass
Pipe (4), in described electrode A (1), electrode B (2) and chip (3) may be contained within glass-tube (4), described chip (3) and electrode A (1) and
Realize electrical connection by Diffusion Welding between electrode B (2), and the buffer layer material of diffusion welding (DW) is respectively the upper table of chip (3)
Face metal layer (31) and lower surface metal layer (32), the Diffusion Welding between chip (3) and electrode A (1) and electrode B (2)
Sealing-in with glass-tube (4) synchronously completes one entirety of formation.
A kind of metallurgical bonding glass sealed diode structure the most according to claim 1, it is characterised in that: described electrode A (1) and
The material of electrode B (2) is tungsten.
A kind of metallurgical bonding glass sealed diode structure the most according to claim 1, it is characterised in that: described glass-tube (4) is adopted
Using Glass8652 glass-tube, the softening point temperature of Glass8652 glass-tube is 638 DEG C.
A kind of metallurgical bonding glass sealed diode structure the most according to claim 1, it is characterised in that: described chip (3) is
GPP chip, and the material of its upper surface metal layer (31) and lower surface metal layer (32) is silver.
A kind of metallurgical bonding glass sealed diode structure the most according to claim 1, described diode uses sinter molding, and
The temperature of sinter molding is 720 DEG C ± 20 DEG C.
6. realizing a production method for metallurgical bonding glass sealed diode as described in claim 1 to 5 any one, its feature exists
In: concrete grammar step is as follows:
(1) components and parts assemble: glass-tube (4), electrode A (1) and chip are loaded in lower mold, and load electrode B (2) in upper mold,
Again upper mold is tipped upside down in lower mold so that components and parts assemble formation diode in mould, and then the upper end in electrode B (2) is executed
Add the briquetting that weight is 2g-15g；
(2) sintering: being sintered by the diode assembled in step (1), its sintering method can be hot wall type vacuum-sintering
Or cold wall type vacuum-sintering.
The production method of a kind of metallurgical bonding glass sealed diode the most according to claim 6, it is characterised in that: described hot wall
Formula vacuum sintering method step is as follows:
A, mould equipped with diode in step (1) is pushed in vacuum sintering furnace boiler tube；
B, boiler tube in step A is evacuated；
C, when in step B boiler tube internal vacuum less than 1 × 10-4Open heating during Pa, and by temperature in boiler tube at 10min～
720 DEG C ± 20 DEG C it are warming up in 30min；
D, by thermostatic 10min～30min in boiler tube in step C；
E, in 10min～30min, diode is down to room temperature；
Diode is taken out from sintering furnace boiler tube by F, unlatching vent valve, i.e. can get finished product glass sealed diode.
The production method of a kind of metallurgical bonding glass sealed diode the most according to claim 6, it is characterised in that: described cold wall
Formula vacuum sintering method step is as follows:
A, will be equipped with in the burner hearth that vacuum sintering furnace put into by the mould of diode, and bell is covered；
B, after vacuum-sintering stove evacuation 10s～30s, in sintering furnace, it is filled with nitrogen；
C, after being filled with nitrogen in sintering furnace, it is evacuated to burner hearth internal vacuum again less than 1 × 10 until step B-4Pa, and give stone
Ink mould energising, makes mold temperature be warming up to 720 ± 20 DEG C in 10min～30min；
D, by 720 DEG C ± 20 DEG C constant temperature 10min～30min of mold temperature in step C；
Mould thermostatic 10min～30min in E, step D, is filled with nitrogen, by mould in 10min～30min inside burner hearth
Tool is down to room temperature；
Product is taken out by F, unlatching bell, i.e. can get finished product glass sealed diode.
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| CN107170727A (en) * | 2017-06-02 | 2017-09-15 | 朝阳无线电元件有限责任公司 | A kind of I classes metallurgical bonding diode design and manufacturing technology |
| CN113192902A (en) * | 2021-04-27 | 2021-07-30 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and manufacturing method thereof |
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| CN2640046Y (en) * | 2003-06-30 | 2004-09-08 | 上海新玻电子有限公司 | Improved glass sealed diode |
| US20050227416A1 (en) * | 2001-03-13 | 2005-10-13 | Hitachi, Ltd. | Electronic device and method of manufacture the same |
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
| CN105336768A (en) * | 2015-10-13 | 2016-02-17 | 济南市半导体元件实验所 | Packaging technology of highly-reliable surface mounting glass-packaged diode |
| CN205723553U (en) * | 2016-06-14 | 2016-11-23 | 张路非 | A kind of metallurgical bonding glass sealed diode structure |
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| US20050227416A1 (en) * | 2001-03-13 | 2005-10-13 | Hitachi, Ltd. | Electronic device and method of manufacture the same |
| CN2640046Y (en) * | 2003-06-30 | 2004-09-08 | 上海新玻电子有限公司 | Improved glass sealed diode |
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
| CN105336768A (en) * | 2015-10-13 | 2016-02-17 | 济南市半导体元件实验所 | Packaging technology of highly-reliable surface mounting glass-packaged diode |
| CN205723553U (en) * | 2016-06-14 | 2016-11-23 | 张路非 | A kind of metallurgical bonding glass sealed diode structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107170727A (en) * | 2017-06-02 | 2017-09-15 | 朝阳无线电元件有限责任公司 | A kind of I classes metallurgical bonding diode design and manufacturing technology |
| CN113192902A (en) * | 2021-04-27 | 2021-07-30 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and manufacturing method thereof |
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| CN105845740B (en) | 2019-04-09 |
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