CN107170727A - A kind of I classes metallurgical bonding diode design and manufacturing technology - Google Patents
A kind of I classes metallurgical bonding diode design and manufacturing technology Download PDFInfo
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- CN107170727A CN107170727A CN201710408216.5A CN201710408216A CN107170727A CN 107170727 A CN107170727 A CN 107170727A CN 201710408216 A CN201710408216 A CN 201710408216A CN 107170727 A CN107170727 A CN 107170727A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/114—Manufacturing methods by blanket deposition of the material of the bump connector
- H01L2224/11444—Manufacturing methods by blanket deposition of the material of the bump connector in gaseous form
- H01L2224/1145—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/13184—Tungsten [W] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/13198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/13298—Fillers
- H01L2224/13399—Coating material
- H01L2224/134—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13439—Silver [Ag] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Abstract
The invention discloses a kind of I classes metallurgical bonding diode design and manufacturing technology, including table top tube core, both sides on table top tube core are provided with purification layer, the both sides of table top tube core have been fixedly connected with silver-plated tungsten post, and the surface of table top tube core and silver-plated tungsten post has been fixedly connected with glass bulb, the both sides of glass bulb and the position corresponding with silver-plated tungsten post have been fixedly connected with red copper fourth head lead by alloy wlding, are related to the design and manufacturing technology field of electronic component.The I class metallurgical bonding diode designs and manufacturing technology, change existing I classes metallurgical bonding volume it is also relatively large the problem of, the light weight of product, its unfailing performance is high, various environment and credit rating requirement are better met, the effect of I class metallurgical bondings has been reached, according to passing production leadtime, checkability has been improved, reduce manufacturing cost, after manufacturing technology of the present invention, Master Cost greatly reduces, and adds corporate income.
Description
Technical field
The present invention relates to the design of electronic component and manufacturing technology field, specially a kind of I classes metallurgical bonding diode is set
Meter and manufacturing technology.
Background technology
Diode is a kind of device with two electrodes among electronic component, only allows an electric current to be flowed through by single direction,
Many uses are the functions using its rectification.And varactor is then used for the adjustable condenser as electronic type.It is most of
The sense of current that diode possesses we be normally referred to as " rectification " function.The most common function of diode is exactly only to allow
Electric current is passed through by single direction（Referred to as forward bias voltage drop）, blocked when reverse（Referred to as reverse bias）.Therefore, diode can be thought
Into the non-return valve of electronic edition.
The metallurgical bonding product that American army mark is defined is divided into three classes, and I classes are silver, silicon alloy metallurgical bonding, and II class is to use alloy
The metallurgical bonding of weld tabs welding, III class is crimping structure.What current most domestic manufacturer used is all II class, III class bonding envelope
Dress form, and it is external have begun at present generally using the encapsulation of I classes metallurgical bonding, the product chips of I classes metallurgical bonding encapsulation with
Tungsten post surface is not added with weld tabs, and its reliability is more much higher than the product of II class, III class bonding packaging, and the I classes of China are metallurgical
Bonding is not popularized very, and the volume of I class metallurgical bondings is also relatively large, the quality weight of product, and its reliability is low, nothing
Method meets various environment and credit rating requirement, does not reach the effect of I class metallurgical bondings.
The content of the invention
（One）The technical problem of solution
In view of the shortcomings of the prior art, the invention provides a kind of I classes metallurgical bonding diode design and manufacturing technology, solve
The volume of I class metallurgical bondings is also relatively large, and the quality weight of product, its reliability is low, it is impossible to meet various environment and quality
The problem of class requirement.
（Two）Technical scheme
To realize object above, the present invention is achieved by the following technical programs：A kind of I classes metallurgical bonding diode design with
Both sides on manufacturing technology, including table top tube core, the table top tube core are provided with purification layer, and the both sides of the table top tube core are equal
Silver-plated tungsten post is fixedly connected with, and the surface of table top tube core and silver-plated tungsten post has been fixedly connected with glass bulb, the two of the glass bulb
Side and the position corresponding with silver-plated tungsten post have been fixedly connected with red copper fourth head lead by alloy wlding.
It is preferred that, the table top tube core and silver-plated tungsten post and glass bulb and red copper fourth head lead are by high temperature sintering one
Rise.
It is preferred that, Al-Ag metallization is done on the two sides of the table top tube core.
The invention also discloses a kind of I classes metallurgical bonding diode design and manufacturing technology, comprise the following steps：
S1, table top tube core manufacture：Platform is made by diffusion, photoetching, mesa etch, CVD, evaporation, scribing process in N-type monocrystalline
Facial canal core, diffusion is applied using surface by the way of B30, is being distributed to form PN junction by high temperature；CVD passivation layers are nitrogenized using SIPOS+
The layer compound passivation of silicon+MTO silica, evaporation first evaporates one layer of thin aluminium, re-evaporation silver in chip surface；
S2, table top tube core are sintered with silver-plated tungsten post：Alloy sheet is not added between table top tube core and silver-plated tungsten post, by high temperature by table top
Tube core is sintered together with silver-plated tungsten post, makes to form eutectic between table top tube core and silver-plated tungsten post, and sintering temperature is 960 DEG C；
The sintering of S3, glass bulb and silver-plated tungsten post：The table top tube core sintered and silver-plated tungsten post are existed with glass bulb by high temperature sintering
Together, sintering temperature is 800 DEG C；
S4, red copper fourth head lead sintering：Red copper fourth head lead is using the golden solder of 88 germanium 12 of high temperature and silver-plated tungsten post soldering
Connection, welding temperature is 410 DEG C.
It is preferred that, in the step S1, the selection principle of diffusion impurity source：Conduction type, impurity diffusion coefficient it is big
Small, diffusion mask, to be readily available purity high and have the less impurity source of higher vapor pressure, toxicity.
（Three）Beneficial effect
The invention provides a kind of I classes metallurgical bonding diode design and manufacturing technology.Possesses following beneficial effect：The I class smeltings
Gold bonding diode design and manufacturing technology, silver-plated tungsten post, and table top pipe have been fixedly connected with by the both sides of table top tube core
The surface of core and silver-plated tungsten post has been fixedly connected with glass bulb, both sides of the glass bulb and position corresponding with silver-plated tungsten post passes through
Alloy wlding has been fixedly connected with red copper fourth head lead, and manufacturing technology includes：S1, the manufacture of table top tube core, S2, table top pipe
Core and silver-plated tungsten post sintering, S3, glass bulb and the sintering and S4 of silver-plated tungsten post, the sintering of red copper fourth head lead, solve current state
What interior most manufacturers were used is all that II class, III class are bonded the situation of packing forms, the product chips of I classes metallurgical bonding encapsulation with
Tungsten post surface is not added with weld tabs, and its reliability is more much higher than the product of II class, III class bonding packaging, promotes the I class smeltings of China
Gold bonding and popularization, change existing I classes metallurgical bonding volume it is also relatively large the problem of, the light weight of product, its
Unfailing performance is high, has better met various environment and credit rating requirement, the effect of I class metallurgical bondings has been reached, according to mistake
Past production leadtime, using old processing line, highest qualification rate is 75.2%, and new processing method qualification rate lifting is arrived
98%；Checkability is improved, manufacturing cost is reduced, after manufacturing technology of the present invention, Master Cost greatly reduces, is increased
Corporate income.
Brief description of the drawings
Fig. 1 is I classes metallurgical bonding production tube assembling schematic diagram of the present invention；
Fig. 2 is that tube core of the present invention manufactures longitudinal profile schematic diagram；
In figure, 1 table top tube core, 2 purification layers, 3 silver-plated tungsten posts, 4 glass bulbs, 5 alloy wldings, 6 red copper fourth head leads.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
The embodiment of the present invention provides a kind of I classes metallurgical bonding diode, including table top tube core 1, and the two sides of table top tube core 1 is done
Al-Ag metallizes, and the both sides on table top tube core 1 are provided with purification layer 2, table top tube core 1 and silver-plated tungsten post 3 and the He of glass bulb 4
By high temperature sintering together, the both sides of table top tube core 1 have been fixedly connected with silver-plated tungsten post 3, table top pipe to red copper fourth head lead 6
Without weld tabs when core 1 and silver-plated tungsten post 3 sintering, and the surface of table top tube core 1 and silver-plated tungsten post 3 has been fixedly connected with glass bulb 4,
The both sides of glass bulb 4 and the position corresponding with silver-plated tungsten post 3 have been fixedly connected with red copper fourth head lead 6 by alloy wlding 5.
The present embodiment also proposed a kind of I classes metallurgical bonding diode manufacturing technology, and its processing method comprises the following steps：
S1, table top tube core 1 manufacture：N-type monocrystalline is made up of diffusion, photoetching, mesa etch, CVD, evaporation, scribing process
Table top tube core 1, diffusion is applied using surface by the way of B30, is being distributed to form PN junction by high temperature；CVD passivation layers use SIPOS+
The layer compound passivation 2 of silicon nitride+MTO silica, evaporation first evaporates one layer of thin aluminium, re-evaporation silver in chip surface；
S2, table top tube core 1 are sintered with silver-plated tungsten post 3：Alloy sheet is not added between table top tube core 1 and silver-plated tungsten post 3, will by high temperature
Table top tube core 1 is sintered together with silver-plated tungsten post 3, makes to form eutectic between table top tube core 1 and silver-plated tungsten post 3, sintering temperature is
960℃；
The sintering of S3, glass bulb 4 and silver-plated tungsten post 3：The table top tube core 1 sintered and silver-plated tungsten post 3 are burnt with glass bulb 4 by high temperature
Together, sintering temperature is 800 DEG C to knot；
S4, red copper fourth head lead 6 sintering：Red copper fourth head lead 6 is using the golden solder of 88 germanium 12 of high temperature and the silver-plated pricker of tungsten post 3
Weldering connection, welding temperature is 410 DEG C.
This encapsulating structure is only used in high-grade product, its thermal conduction characteristic and highly reliable mechanical connection for protruding
Characteristic, it is ensured that device reliably working under harsh environments.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions.By sentence " including one ... the key element limited, it is not excluded that
Also there is other identical element in the process including the key element, method, article or equipment ".
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of changes, modification can be carried out to these embodiments, replace without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of I classes metallurgical bonding diode, including table top tube core（1）, the table top tube core（1）On both sides be provided with it is pure
Change layer（2）, it is characterised in that：The table top tube core（1）Both sides be fixedly connected with silver-plated tungsten post（3）, and table top tube core
（1）With silver-plated tungsten post（3）Surface be fixedly connected with glass bulb（4）, the glass bulb（4）Both sides and with silver-plated tungsten post（3）Phase
Corresponding position passes through alloy wlding（5）It has been fixedly connected with red copper fourth head lead（6）.
2. a kind of I classes metallurgical bonding diode according to claim 1, it is characterised in that：The table top tube core（1）And plating
Silver-colored tungsten post（3）And glass bulb（4）With red copper fourth head lead（6）By high temperature sintering together.
3. a kind of I classes metallurgical bonding diode according to claim 1, it is characterised in that：The table top tube core（1）Two
Do Al-Ag metallization in face.
4. a kind of I classes metallurgical bonding diode manufacturing technology according to claim 1, it is characterised in that：Including following step
Suddenly：
S1, table top tube core（1）Manufacture：N-type monocrystalline is passed through into diffusion, photoetching, mesa etch, CVD, evaporation, scribing process system
Into table top tube core（1）, spread by the way of applying B30 using surface, be distributed to form PN junction by high temperature；CVD passivation layers are used
The layer compound passivation of SIPOS+ silicon nitride+MTO silica（2）, evaporate and first evaporate one layer of thin aluminium, re-evaporation in chip surface
Silver；
S2, table top tube core（1）With silver-plated tungsten post（3）Sintering：Table top tube core（1）With silver-plated tungsten post（3）Between be not added with alloy sheet, lead to
High temperature is crossed by table top tube core（1）With silver-plated tungsten post（3）It is sintered together, makes table top tube core（1）With silver-plated tungsten post（3）Between formed
Eutectic, sintering temperature is 960 DEG C；
S3, glass bulb（4）With silver-plated tungsten post（3）Sintering：By the table top tube core sintered（1）With silver-plated tungsten post（3）With glass bulb（4）
By high temperature sintering together, sintering temperature is 800 DEG C；
S4, red copper fourth head lead（6）Sintering：Red copper fourth head lead（6）Using the golden solder of 88 germanium 12 of high temperature and silver-plated tungsten
Post（3）Soldering connection, welding temperature is 410 DEG C.
5. a kind of I classes metallurgical bonding diode manufacturing technology according to claim 4, it is characterised in that：The step S1
In, the selection principle of diffusion impurity source：Conduction type, the size of impurity diffusion coefficient, diffusion mask, to be readily available purity high
And have the less impurity source of higher vapor pressure, toxicity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710408216.5A CN107170727A (en) | 2017-06-02 | 2017-06-02 | A kind of I classes metallurgical bonding diode design and manufacturing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710408216.5A CN107170727A (en) | 2017-06-02 | 2017-06-02 | A kind of I classes metallurgical bonding diode design and manufacturing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107170727A true CN107170727A (en) | 2017-09-15 |
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ID=59824298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710408216.5A Pending CN107170727A (en) | 2017-06-02 | 2017-06-02 | A kind of I classes metallurgical bonding diode design and manufacturing technology |
Country Status (1)
| Country | Link |
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| CN (1) | CN107170727A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911499A (en) * | 2019-09-27 | 2020-03-24 | 北京时代民芯科技有限公司 | Glass-sealed voltage regulating diode, tube core and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3844029A (en) * | 1972-02-02 | 1974-10-29 | Trw Inc | High power double-slug diode package |
| US3930306A (en) * | 1974-04-24 | 1976-01-06 | General Instrument Corporation | Process for attaching a lead member to a semiconductor device |
| CN202384330U (en) * | 2011-12-29 | 2012-08-15 | 乐山嘉洋科技发展有限公司 | Glass passivated chip with multilayer protection |
| CN105405772A (en) * | 2015-10-26 | 2016-03-16 | 北京时代民芯科技有限公司 | Diode chip fusion welding method |
| CN105845740A (en) * | 2016-06-14 | 2016-08-10 | 张路非 | Metallurgical bonding glass-sealed diode structure and production method thereof |
| CN205488143U (en) * | 2015-12-28 | 2016-08-17 | 上海智晶半导体科技有限公司 | Diode and transient voltage inhibitor |
-
2017
- 2017-06-02 CN CN201710408216.5A patent/CN107170727A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3844029A (en) * | 1972-02-02 | 1974-10-29 | Trw Inc | High power double-slug diode package |
| US3930306A (en) * | 1974-04-24 | 1976-01-06 | General Instrument Corporation | Process for attaching a lead member to a semiconductor device |
| CN202384330U (en) * | 2011-12-29 | 2012-08-15 | 乐山嘉洋科技发展有限公司 | Glass passivated chip with multilayer protection |
| CN105405772A (en) * | 2015-10-26 | 2016-03-16 | 北京时代民芯科技有限公司 | Diode chip fusion welding method |
| CN205488143U (en) * | 2015-12-28 | 2016-08-17 | 上海智晶半导体科技有限公司 | Diode and transient voltage inhibitor |
| CN105845740A (en) * | 2016-06-14 | 2016-08-10 | 张路非 | Metallurgical bonding glass-sealed diode structure and production method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911499A (en) * | 2019-09-27 | 2020-03-24 | 北京时代民芯科技有限公司 | Glass-sealed voltage regulating diode, tube core and manufacturing method thereof |
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Application publication date: 20170915 |
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