CN105336768B - The packaging technology of highly reliable surface mount glass sealed diode - Google Patents
The packaging technology of highly reliable surface mount glass sealed diode Download PDFInfo
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- CN105336768B CN105336768B CN201510668834.4A CN201510668834A CN105336768B CN 105336768 B CN105336768 B CN 105336768B CN 201510668834 A CN201510668834 A CN 201510668834A CN 105336768 B CN105336768 B CN 105336768B
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- chip
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- glass bulb
- weld tabs
- diode
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- 239000011521 glass Substances 0.000 title claims abstract description 52
- 238000012536 packaging technology Methods 0.000 title claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 230000008569 process Effects 0.000 claims abstract description 8
- 238000009853 pyrometallurgy Methods 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- 238000005245 sintering Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 239000011265 semifinished product Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000003723 Smelting Methods 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 238000005272 metallurgy Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000012856 packing Methods 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract description 2
- 231100001261 hazardous Toxicity 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000000047 product Substances 0.000 description 12
- 238000005036 potential barrier Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910020968 MoSi2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/858—Bonding techniques
- H01L2224/8584—Sintering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Products (AREA)
- Joining Of Glass To Other Materials (AREA)
Abstract
The invention discloses a kind of packaging technologies of highly reliable surface mount glass sealed diode, the diode includes glass bulb, the chip in glass bulb, the exit for being set in glass bulb both ends, weld tabs is equipped between exit and chip, exit and glass bulb, exit and weld tabs, the chip of diode are bonded together by pyrometallurgical processes.Metallurgical bonding structure has the advantages that reliability height, resistance to heavy current impact, thermal resistance are small, and operating temperature range is wide（- 55 DEG C~125 DEG C）, high temperature resistant welding（15 minutes under 550 DEG C of environment, parameter does not deteriorate）；Product selection realizes the thermally matched of the full operating temperature range of product；Use nitrogen for protective gas in entire technical process, production safety, no hazardous gas uses；Manufactured diode installation volume is small, and packing density is high, light-weight；Technological operation is simple, easily realizes batch or large-scale production.
Description
Technical field
The present invention relates to a kind of packaging technologies of diode, are a kind of highly reliable surface mount glass inside front cover pole specifically
The packaging technology of pipe belongs to diode packaging technology field.
Background technology
The low current Schottky diode largely used at present, packing forms are axial lead glass-encapsulated, fixing body
Product is big, weight is big, lead impedance is big, causes the volume of complete machine to increase, reliability reduction, unsuitable advanced weapons equipment
The high density of system, high-performance, highly reliable requirement.Surface mount low current Schottky diode is with metal silicide（Such as
MoSi2）For anode metal silicide-silicon made of the potential barrier formed on the two contact surface is utilized using N-type semiconductor as cathode
Contact semiconductor devices.Device chip potential barrier is to improve device using the Schottky barrier of metal silicide-silicon contact
Forward characteristic；Chip uses protection ring and multi-layer metallized structure simultaneously, improves the reversed pressure-resistant reverse characteristic of device and resists
Thermal fatigue property.Surface mount glass envelope low current Schottky diode series is low with forward voltage drop, Reverse recovery is fast, volume
The features such as small, light-weight, efficient, is used for mainly as switch, rectifier diode in the circuits such as Switching Power Supply, high-frequency rectification,
The performance of product directly influences the speed of service and working efficiency of main power source system, and performance and the optimization for improving complete machine are
System design etc. play the role of it is vital, product can be widely applied to computer, radar, communication transmitter, space flight fly
Row device, instrument and meter etc..
Currently, the chip of surface mount glass sealed diode is to crimp with the connection type of exit, that is, utilize external force（Such as bullet
The deformation pressure of piece, the convergent force of glass high temperature deformation）Realize the Mechanical Contact of unloading of chip and exit, this connection type
Reliability is low, cannot meet the requirement of long-term reliability.
Invention content
In view of the drawbacks of the prior art, the present invention provides a kind of packaging technology of highly reliable surface mount glass sealed diode,
High using diode reliability made of the packaging technology, operating temperature is wide, high temperature resistant welding, thermally matched good.
In order to solve the technical problem, the technical solution adopted by the present invention is：A kind of highly reliable surface mount glass inside front cover
The packaging technology of pole pipe, the diode include glass bulb, the chip in glass bulb, the exit for being set in glass bulb both ends, are drawn
Weld tabs is equipped between outlet and chip, it is characterised in that：The exit of diode passes through with glass bulb, exit and weld tabs, chip
Pyrometallurgical processes are bonded together.
Further, the packaging technology of highly reliable surface mount glass sealed diode of the present invention includes the following steps：
1）, prepare chip, chip thickness is 210 μm ± 50 μm；
2）, with mold chip, weld tabs, exit and glass bulb are assembled together；
3）, nitrogen sintering, open sintering furnace, by process conditions setting operating temperature and nitrogen flow, nitrogen flow be
1000ml/min ± 10ml/min puts the mold equipped with semi-finished product device to stove when fire door temperature is raised to 300 DEG C ± 20 DEG C
Mouth preheating at least 10min；After furnace temperature is raised to 620 DEG C ± 20 DEG C, mold is pushed into flat-temperature zone, reaches scheduled constant temperature time by mould
Tool is pulled to fire door cooling 30min, finally takes out mold and naturally cools to room temperature, completes encapsulation, realize exit, weld tabs and chip
The sealing of good metallurgical bonding and glass bulb and exit.
Further, in above-mentioned thermostatic process, constant temperature time 10-30min.
Further, the weld tabs is silver-bearing copper tin piece, and the weight ratio of silver-bearing copper tin is 6:3:1.
Further, the chip is the chip that potential barrier is resistant to 600 DEG C or more the electroplates of high temperature sintering.
Further, the material of the exit is Dumet wire, and the outer surface of exit is copper, and the inside is iron-nickel alloy.
Beneficial effects of the present invention：Packaging technology of the present invention using pyrometallurgical processes by the exit of diode with
Together with weld tabs, chip bonding, metallurgical bonding structure has reliability height, resistance to heavy current impact, thermal resistance for glass bulb, exit
Small advantage, and operating temperature range is wide（- 55 DEG C~125 DEG C）, high temperature resistant welding（15 minutes under 550 DEG C of environment, parameter is not
Deteriorate）；Product selection realizes the thermally matched of the full operating temperature range of product；Use nitrogen for protection in entire technical process
Gas, production safety, no hazardous gas use；Manufactured diode installation volume is small, and packing density is high, light-weight；Technique is grasped
Make simple, easily realization batch or large-scale production.
Description of the drawings
Fig. 1 is the structural schematic diagram of surface mount glass sealed diode of the present invention；
Fig. 2 is structural schematic diagram when surface mount glass sealed diode of the present invention encapsulates；
Fig. 3 is the temperature profile in encapsulation process；
In figure：1, glass bulb, 2, chip, 3, exit, 4, weld tabs.
Specific implementation mode
The present invention is described further in the following with reference to the drawings and specific embodiments and limits.
As shown in Figure 1, for the structural schematic diagram of surface mount glass sealed diode described in the present embodiment, including glass bulb 1, position
Chip 2 among glass bulb 1 is set in the exit 3 at 1 both ends of glass bulb and the weld tabs 4 between exit 3 and chip 2,
In the present embodiment, glass bulb 1 and exit 3, glass bulb 1 and weld tabs 4, chip 2 are bonded together by pyrometallurgy bonding technology.
In this implementation, the packaging technology of the highly reliable surface mount glass sealed diode includes the following steps：
1）, prepare chip, chip thickness is 210 μm ± 50 μm；
2）, with mold chip, weld tabs, exit and glass bulb are assembled together, as shown in Figure 2；
3）, nitrogen sintering, open sintering furnace, by process conditions setting operating temperature and nitrogen flow, nitrogen flow be
1000ml/min ± 10ml/min puts the mold equipped with semi-finished product device to stove when fire door temperature is raised to 300 DEG C ± 20 DEG C
Mouth preheating at least 10min；After furnace temperature is raised to 620 DEG C ± 20 DEG C, mold is pushed into flat-temperature zone, is pulled to mold after constant temperature 20min
Fire door cools down 30min, finally takes out mold and naturally cools to room temperature, completes encapsulation, realizes that exit, weld tabs and chip are good
The sealing of metallurgical bonding and glass bulb and exit.Temperature variation curve in sintering process is as shown in Figure 3.
In the present embodiment, the weld tabs is silver-bearing copper tin piece, and the weight ratio of silver-bearing copper tin is 6:3:1.The surface of the chip is
Silver, potential barrier are resistant to 600 DEG C or more high temperature sinterings.The material of the exit is Dumet wire, and the outer surface of exit is copper, inner
Face is iron-nickel alloy.
Highly reliable surface mount glass sealed diode described in the present embodiment has that resistance to heavy current impact, connection is reliable, thermal resistance is small
Etc. advantages.When encapsulation, need to consider Schottky chip tolerance high temperature capabilities, chip metallization, envelope material, exit material
The factors such as material meet the requirements such as thermally matched, mechanical strength, electric current transmission.Therefore, in order to realize product electrical parameter requirement and can
By connection, it is contemplated that the parameter characteristic and architectural characteristic of product.
It is 560 DEG C that glass bulb, which uses GLASS8532 type glass bulbs, glass bulb softening point temperature, and glass bulb operating point maximum temperature is 760
℃；Weld tabs uses silver-bearing copper tin piece, liquid occurs at 600 DEG C or so, to 720 DEG C of whole liquid, density 9.57g/cc, therefore
Determine that high temperature bonding temperature is 620 DEG C ± 20 DEG C.The material of exit is Dumet wire, and the outer surface of exit is copper, and the inside is
Iron-nickel alloy.The surface of the chip is silver, and potential barrier is resistant to 600 DEG C or more high temperature sinterings.
The primary raw material for forming diode is exit, glass bulb, chip, weld tabs（Main component is Ag）, a variety of materials
Coefficient of thermal expansion is shown in Table 1 raw material and thermally expands table of washing one's face and rinsing one's mouth, and the thickness x of product chips silicon layer is determined according to the coefficient of expansion of material
With chip silver thickness and weld tabs thickness y, it is 0.21mm, chip silver thickness 0.01mm, according to formula generally to take silicon layer thickness x
(x+0.01+y)*8.0×10-6=x*4.2×10-6+(0.01+y)*18.9×10-6Weld tabs thickness y is calculated, is realized thermally matched.
According to product structure characteristic, the main thermal matching for considering glass bulb and Dumet wire exit.It can from upper table
Go out, the similar thermal expansion coefficient of both materials, thermal matching is good.So we use and Dumet wire matched expansion coefficient
Glass bulb, and be sintered in nitrogen protection atmosphere, ensure product long-term reliability.
It did after product sinter molding and was repeatedly tested in relation to thermally matched experiment, including anti-glass cracking, thermal shock test
（Liquid-liquid）, the items ambient mechanical experiment examination such as 500 temperature shock tests is qualified, to prove the highly reliable of product
Property meet National Military Standard requirement.
It is above that only the principle of the present invention is further described and is explained, so that those skilled in the art can be more
The good understanding present invention, it should be appreciated that, following the description only plays the role of explanation, explanation, not to of the invention substantive
Content is defined, all improvement within thinking of the present invention, all should be within the scope of the present invention.
Claims (4)
1. a kind of packaging technology of surface mount glass sealed diode, the diode includes glass bulb, the chip in glass bulb, set
It is located at the exit at glass bulb both ends, weld tabs is equipped between exit and chip, it is characterised in that：The exit and glass bulb of diode
It is bonded together by pyrometallurgical processes, exit is bonded together with weld tabs, chip by pyrometallurgical processes, high temperature smelting
Gold bonding temperature is 620 DEG C ± 20 DEG C；Specifically include following steps：
1）, prepare chip, if chip silicon layer thickness be x, unit mm, chip silver thickness 0.01mm, chip thickness be 210 μm ±
50 μm, according to formula (x+0.01+y) * 8.0 × 10-6=x*4.2×10-6+(0.01+y)*18.9×10-6Calculate weld tabs thickness
Y, unit mm, realization is thermally matched, and weld tabs is silver-bearing copper tin piece, and the weight ratio of silver-bearing copper tin is 6:3:1；
2）, with mold chip, weld tabs, exit and glass bulb are assembled together；
3）, nitrogen sintering, sintering furnace is opened, by process conditions setting operating temperature and nitrogen flow, nitrogen flow 1000ml/
Mold equipped with semi-finished product device is put to fire door and is preheated when fire door temperature is raised to 300 DEG C ± 20 DEG C by min ± 10ml/min
At least 10min；After furnace temperature is raised to 620 DEG C ± 20 DEG C, mold is pushed into flat-temperature zone, reaches scheduled constant temperature time and is pulled to mold
Fire door cools down 30min, finally takes out mold and naturally cools to room temperature, complete encapsulation, realizes the metallurgy of exit, weld tabs and chip
Bonding and the sealing of glass bulb and exit.
2. the packaging technology of surface mount glass sealed diode according to claim 1, it is characterised in that：The constant temperature time
For 10-30min.
3. the packaging technology of surface mount glass sealed diode according to claim 2, it is characterised in that：The chip is gesture
The chip of resistance to 600 DEG C of barrier energy or more the electroplate of high temperature sintering.
4. the packaging technology of surface mount glass sealed diode according to claim 3, it is characterised in that：The exit
Material is Dumet wire, and the outer surface of exit is copper, and the inside is iron-nickel alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510668834.4A CN105336768B (en) | 2015-10-13 | 2015-10-13 | The packaging technology of highly reliable surface mount glass sealed diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510668834.4A CN105336768B (en) | 2015-10-13 | 2015-10-13 | The packaging technology of highly reliable surface mount glass sealed diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105336768A CN105336768A (en) | 2016-02-17 |
| CN105336768B true CN105336768B (en) | 2018-10-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510668834.4A Active CN105336768B (en) | 2015-10-13 | 2015-10-13 | The packaging technology of highly reliable surface mount glass sealed diode |
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| CN (1) | CN105336768B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845740B (en) * | 2016-06-14 | 2019-04-09 | 张路非 | A kind of metallurgical bonding glass sealed diode structure and production method |
| CN107170728A (en) * | 2017-06-02 | 2017-09-15 | 朝阳无线电元件有限责任公司 | A kind of current regulator diode design and manufacturing technology |
| CN113192902A (en) * | 2021-04-27 | 2021-07-30 | 中国振华集团永光电子有限公司（国营第八七三厂） | High-temperature metallurgical bonding glass passivation entity encapsulation surface-mounted diode and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4433629B2 (en) * | 2001-03-13 | 2010-03-17 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
| CN101789403B (en) * | 2010-01-05 | 2012-05-30 | 苏州群鑫电子有限公司 | Chip surface contact glass packaging rectifier tube and manufacturing method thereof |
| CN102129986B (en) * | 2010-12-29 | 2012-10-24 | 朝阳无线电元件有限责任公司 | Method for manufacturing glass sealed diode by adopting metallurgy bonding method |
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Non-Patent Citations (1)
| Title |
|---|
| 高可靠表面贴装玻封小电流肖特基二极管制造技术研究;李东华;《中国优秀硕士学位论文全文数据库》;20150430;I135-74 * |
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Effective date of registration: 20240206 Address after: No. 13856 Jingshi West Road, Ping'an Street, Changqing District, Jinan City, Shandong Province, 250000 Patentee after: JINAN JINGHENG ELECTRONICS Co.,Ltd. Country or region after: China Address before: No. 51 Heping Road, Jinan City, Shandong Province, 250014 Patentee before: JINAN SEMICONDUCTOR Research Institute Country or region before: China |
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